TW200403726A - Low temperature dielectric deposition using aminosilane and ozone - Google Patents

Low temperature dielectric deposition using aminosilane and ozone Download PDF

Info

Publication number
TW200403726A
TW200403726A TW92119580A TW92119580A TW200403726A TW 200403726 A TW200403726 A TW 200403726A TW 92119580 A TW92119580 A TW 92119580A TW 92119580 A TW92119580 A TW 92119580A TW 200403726 A TW200403726 A TW 200403726A
Authority
TW
Taiwan
Prior art keywords
gas
tank
substrate
patent application
silicon
Prior art date
Application number
TW92119580A
Other languages
Chinese (zh)
Inventor
Yoshihide Senzaki
Original Assignee
Asml Us Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Us Inc filed Critical Asml Us Inc
Publication of TW200403726A publication Critical patent/TW200403726A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/308—Oxynitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]

Abstract

This invention describes a method of depositing dielectric layers or films with good step coverage and ability to fill high-aspect ratio device structures at low temperature (20-400C) by CVD processes through the use of aminosilane or silicon alkylamide compounds as the silicon precursor with an oxidizerthat includes ozone. The present invention further provides a method of depositing silicon oxynitride (SiOxNy) films at low temperatures using aminosilane or silicon alkylamide compounds as a silicon precursor, with an oxidizer that includes ozone, and ammonia (NH3).

Description

200403726 (1) 玖、發明說明 相關申請案 此申請案係關於2 0 0 2年7月1 9日提出申請的美國專利 申請案第60/396，746號，其標題爲”Low Temperature Dielectric Deposition Using Aminosilane and Ozone(利用 胺基甲矽烷和臭氧於低溫沉積介電質的方法）”並聲明其優 先權，茲處將此申請案中所述者列入參考。 【發明所屬之技術領域】 本發明一般係關於半導體範圍。更特定言之，本發明 係關於在半導體裝置和晶圓上之化學蒸鍍法。 【先前技術】 半導體裝置製造上，低壓熱化學蒸鍍（CVD)製造具有 良好逐步覆蓋性質和可接受之塡隙縱橫比的金屬前 (premetal)介電膜。一些先質（如：雙（第三丁基胺基）甲矽 烷（BTBAS)和Et2SiH2)與02於約400 °C反應時，藉化學蒸鍍 (C V D )製造S i Ο 2。但新一代整體電路須要較低溫法用於金 屬前介電（PMD)和定位應用。一個代替降低加工溫度的方 式是使用高密度電漿（HDP)化學蒸鍍（HDPCVD)法。藉此 H D P C V D法，摻磷的玻璃（p s g )或未摻雜的矽酸鹽玻璃 (NSG)於3〇〇- 5 5 0 °C澱積。但HDP化學蒸鍍有著會限制其使 用性的缺點。H D P C V D法的塡隙力限於約3 : 1縱橫比’較 局溫度熱C V D法達到較所欲的6 : 1或更高塡隙縱橫比。因 (2) (2)200403726 此，工業上須要於較低溫度在金屬前介電物上進行化學蒸 鑛且同時維持良好逐步覆蓋率的方法。 【發明內容】 本發明提出於約400 °C或以下的低溫，使Si〇2和其他 氧化物激積在砂底質上，並維持良好逐步覆蓋率和塡隙力 的方法。 本發明之方法可用於經摻雜和未經摻雜的S i Ο 2澱積。 此方法於1C製造的典型應用是金屬前介電物（PMD)、淺溝 隔絕（STI)、溝襯料和定位介電物，但不在此限。 本發明之澱積法亦可使用Ο 3和nh3之混合物作爲反應 物氣體地以氧氮化矽進行。本發明的其他優點包括使用矽 以外的底質，如：Sic、SOI、扁平板、鎢或鋁。 本發明的一個特點中，提出在加工槽中，使介電層澱 積於底質表面上的方法，包含使底質暴於包含氧化劑氣體 和矽先質的反應性氣體中，此處，氧化劑氣體包括臭氧， 矽先質包括甲矽烷基醯胺和胺基甲矽烷中之至少一者。此 方法於約20 °C至400 °c溫度範圍內實行。 本發明的另一特點中，提出一種在槽中使氧氮化矽澱 積於底質上的方法，包含使底質暴於包含氧化劑氣體、氨 和矽先質的反應物氣體中，此處，氧化劑氣體包括臭氧， 矽先質包括甲矽烷基醯胺和胺基甲矽烷中之至少一者。此 方法於約20 °C至400 °C溫度範圍內實行。 (3) 200403726 【實施方式】 本發明提出一種新穎的低熱預算法，其藉化學蒸 (C V D ) ’於等於或低於約4 0 0 °C的溫度，在半導體底質 源積介電層或膜。本發明的一個實施例中，C V D反應以 列式扼要說明：200403726 (1) 发明. Description of the related application This application is related to US Patent Application No. 60 / 396,746, filed on July 19, 2002, entitled "Low Temperature Dielectric Deposition Using "Aminosilane and Ozone (method of depositing dielectrics at low temperature by using aminosilane and ozone)" and declares its priority, and the reference in this application is hereby incorporated by reference. [Technical Field to which the Invention belongs] The present invention relates generally to the field of semiconductors. More specifically, the present invention relates to a chemical vapor deposition method on semiconductor devices and wafers. [Previous Technology] In semiconductor device manufacturing, low-pressure thermochemical evaporation (CVD) manufactures a premetal dielectric film with good progressive coverage properties and an acceptable gap aspect ratio. Some precursors (such as bis (third butylamino) silyl (BTBAS) and Et2SiH2) react with 02 at about 400 ° C to produce Si O 2 by chemical vapor deposition (C V D). However, the new generation of integrated circuits requires lower temperature methods for Pre-Metal Dielectric (PMD) and positioning applications. An alternative to lowering the processing temperature is to use a high-density plasma (HDP) chemical vapor deposition (HDPCVD) method. By this H D P C V D method, a phosphorus-doped glass (p s g) or an undoped silicate glass (NSG) is deposited at 300-550 ° C. However, HDP chemical vapor deposition has the disadvantage of limiting its usability. The gap force of the H D P C V D method is limited to about 3: 1 aspect ratio. The local temperature thermal C V D method achieves a desired gap aspect ratio of 6: 1 or higher. Because of (2) (2) 200403726, industrially, it is necessary to carry out chemical distillation on the pre-metal dielectric at a lower temperature while maintaining a good step coverage. [Summary of the Invention] The present invention proposes a method for causing Si02 and other oxides to accumulate on the sandy substrate at a low temperature of about 400 ° C or below, and to maintain a good step coverage and crevice force. The method of the present invention can be used for doped and undoped Si02 deposition. Typical applications of this method in 1C manufacturing are metal front dielectrics (PMD), shallow trench isolation (STI), trench liners, and positioning dielectrics, but not limited to this. The deposition method of the present invention can also be performed with silicon oxynitride using a mixture of 0 3 and nh 3 as a reactant gas. Other advantages of the present invention include the use of substrates other than silicon, such as Sic, SOI, flat plates, tungsten, or aluminum. In a feature of the present invention, a method for depositing a dielectric layer on the surface of a substrate in a processing tank is provided, which comprises exposing the substrate to a reactive gas containing an oxidant gas and a silicon precursor. Here, the oxidant The gas includes ozone, and the silicon precursor includes at least one of silylamidoamine and aminosilane. This method is performed over a temperature range of approximately 20 ° C to 400 ° c. In another feature of the present invention, a method for depositing silicon oxynitride on a substrate in a tank is provided, which comprises exposing the substrate to a reactant gas containing an oxidant gas, ammonia, and a silicon precursor. Here, The oxidant gas includes ozone, and the silicon precursor includes at least one of silylamidoamine and aminosilane. This method is performed over a temperature range of approximately 20 ° C to 400 ° C. (3) 200403726 [Embodiment] The present invention proposes a novel low thermal budget method, which uses chemical vaporization (CVD) 'at a temperature equal to or lower than about 400 ° C to deposit a dielectric layer on a semiconductor substrate or membrane. In one embodiment of the present invention, the C V D reaction is briefly described in terms of:

Si(NRlR2)^ + 氧化劑氣體—Si02 (1) 其中矽先質是3丨"111112)4，111或112 = }1，（：1-(：6烷基 環狀院基、經F取代的院基， 或 SWNRiRi.xLdXMj 或 3)，此處 L = H 或 C1 式（1 )中，胺基甲矽烷和甲矽烷基醯胺化合物（作爲 先質）中的S i -N鍵具活性且會與氧化劑氣體於比其他含 的先質來得低的溫度反應。此類型化合物中的較佳矽先 具較小R基團，如：甲基乙基醯胺。此反應於有底質存 的反應器或槽中進行。使用臭氧作爲氧化劑氣體的組份 Si〇2 CVD法溫度可降至低於400 °c並維持低壓熱CVD法 良好逐步覆蓋性和塡隙力。臭氧氣體於比其他氧化 (如：水或〇2)來得低的溫度提供原子態氧。此反應中的 先質之氧化反應於約2 0 0 °C或以下得到良好結果，較佳 度範圍是2 0 °C至3 0 0 °C。加工氣體流率範圍中，就先質 流而言，約〗seem至1 OOOsccm，以在約} 〇至5〇〇sccm範圍 爲佳。氧化劑氣體流率在約1 0至2 0 0 0 s c c m範圍內，以在 1 00-2000sccni範圍內爲佳。 一些情況中亦可以使用稀釋氣流，以改善均勻性， 此非必要。惰性氣體（如：氮、氦、氖、氬、氙和它們 鍍 上 下 矽 Si 質 在 5 的 劑 矽 溫 氣 內 約 但 的 ' 6 - (4) (4)200403726 ’組α )可以作爲稀釋氣體。就成本考量，氮和氬是較佳稀 釋體。惰性氣體流率在約1 s C c ηι至1 Q 〇 〇 s c c 1Ώ範圍內。所 有* 1青況中’氣體流率視槽尺寸和抽取力而定，壓力必須在 所須範圍內’嫻於此技術者可藉慣用實驗定出這樣的變 數。 本發明的其他特點中，形成氧氮化矽。置於槽中的底 質暴於下列反應物，CVD反應以下列式扼要說明：Si (NRlR2) ^ + oxidant gas—Si02 (1) where the precursor of silicon is 3 丨 " 111112) 4,111 or 112 =} 1, (: 1-(: 6 alkyl cyclic radical, substituted by F Or SWNRiRi.xLdXMj or 3), where L = H or C1 In the formula (1), the Si -N bond in the aminosilyl and silylamidoamine compounds (as precursors) is active And it will react with the oxidant gas at a lower temperature than other precursors. The better silicon in this type of compound has a smaller R group, such as methyl ethyl amidamine. This reaction is based on the presence of a substrate The temperature of the Si02 CVD method using ozone as the oxidant gas component can be reduced to less than 400 ° C and maintain the good step coverage and gap force of the low-pressure thermal CVD method. Ozone gas is better than other Oxidation (such as: water or 〇2) to provide atomic oxygen at a low temperature. The oxidation of the precursor in this reaction gives good results at about 200 ° C or below, and the preferred range is 20 ° C to 3 0 0 ° C. In the process gas flow rate range, in terms of the precursor flow, about [see] to 1000 sccm, preferably in the range of about 0 to 500 sccm. Oxygen The flow rate of the agent gas is in the range of about 10 to 2000 sccm, preferably in the range of 100-2000 sccni. In some cases, a dilute gas stream can also be used to improve uniformity. This is not necessary. Inert gas (such as : Nitrogen, helium, neon, argon, xenon, and their upper and lower silicon coatings with a Si content of about 5 in the temperature of the agent, the temperature of '6-(4) (4) 200403726 (group α) can be used as a dilution gas. In terms of cost considerations Nitrogen and argon are the preferred diluents. The inert gas flow rate is in the range of about 1 s C c η to 1 Q 〇scs 1Ώ. In all * 1 cases, the 'gas flow rate depends on the tank size and extraction force, The pressure must be within the required range. Those skilled in the art can determine such variables by customary experiments. In other features of the present invention, silicon oxynitride is formed. The substrate placed in the tank is exposed to the following reactants, CVD The reaction is briefly described in the following formula:

Si(NRR)4 + NH3 + O3 — SiOxNy (2) 其中矽先質是SKNR1!^2)*，R】或R2 = H，C「C6烷基、 環狀烷基、經F取代的烷基， 或 Si(NR】R2)4_xLx(X=l，2 或 3)，此處 L = H 或 C1 式（2)中，使用NH3和03氣體混合物，於低溫澱積氧氮 化矽（SiOxNy)。除了半導體應用以外，SiOxNy也是一種重 要的光學應用材料，這是因爲折射指數變化介於S i 02的 1 · 4 5和氮化矽的2.0之間之故。如式（1)反應，胺基甲矽烷 或甲矽烷基醯胺化合物中的Si-N鍵相當不穩定並與臭氧於 低溫反應，使得於低於400 °C實施低溫CVD法。本發明的 此特點中，氨（N Η 3)的氣體流率在約1 0 s c c m至2 0 0 0 s c c m範 圍內，以在約1 OOsccm至2000sccm範圍內爲佳。此新穎方 法可用於摻雜和未摻雜的Si〇2形成。此方法於1C製造之應 用包括，但不限於，金屬前介電物（PMD)、淺溝隔絕 (STI)、溝襯料和定位介電物。 本發明的另一特點中，改變壓力以使方法最適合不同 應用。參考式（1 )和（2 )，此反應可於大氣壓進行並得到良 (5) (5)200403726 好結果，或者反應可於約1毫托耳高至約8 〇 〇托耳的壓力範 圍內進行。例如，反應可於減低壓力進行以進一步改善在 非平面底質上的逐步覆蓋率。或者，在對於逐步覆蓋率要 求較不嚴苛的P M D應用中，可以使用較高壓力。通常，壓 力越高，反應速率和所得澱積速率越高。 本發明中所用底質基本上是矽。但可以使用其他底質 如·· SiC、SOI、扁平板、鎢或鋁）代替矽並仍屬本發明範 圍和精神內。底質之選擇視特定要求而定。 本發明可以已知澱積系統（如：常用的CVD、 PECVD、噴霧熱解、電弧噴注澱積或ALD系統）進行。參 考附圖1，其爲適用以實施本發明之方法之C v D系統1 〇的 簡化截面圖。矽晶圓100載入澱積槽〗〇1中並以晶圓載體或 載物架102承載。此方法可於低或接近大氣壓力實，施。在 此加工槽1 0 1中，晶圓1 〇〇藉加熱器（以位於載體1 02內爲佳） 加熱至澱積溫度。用於CVD法，稀釋氣體1 03經由注射器 1 1〇引至槽101中建立加工壓力。之後，使用半導體和薄膜 工業中慣用的氣體輸送法，矽先質1 0 4和氧化劑1 〇 5 (欲澱 積SiOxNy時，也有NH3 106)氣體引至槽中。反應物氣體運 送至接近晶圓。反應物氣體混合及反應，在晶圓表面上形 成所欲材料層。經過達到目標厚度的適當時間之後，關掉 矽先質和氧化劑/ NH3氣流，較佳情況中，運送稀釋惰性 氣流至槽以將槽中殘餘反應物滌除通過排放口 1 1 2。經過 適當滌氣時間之後，加工完全並自加工槽移除晶圓。 雖然本發明的說明實施例是CVD澱積，此處所述反應 (6) (6)200403726 和方法亦可有利地藉其他澱積技巧（包括電漿增進的 CVD(PECVD)、噴霧熱解、電弧噴注或陰極電弧噴灑澱積 和旋塗於玻璃上（含水化學）澱積）用以澱積介電膜。本發 明亦可用於原子層澱積（ALD)，此處可分別運送反應物。 已如專利法所要求的細節和特點描述本發明，所申請 及所欲於專利權證書中保護者乃述於所附申請專利範圍 中〇 【圖式簡單說明】 在詳細說明中和利用附圖進一步描述本發明，其中： 附圖1所示者是適用以實施本發明之方法的c V D設 備。 【符號說明】 10 CVD系統 1 0 0 ί夕晶圓 101 澱積槽 1 0 2 晶圓載體或載物架 103 稀釋氣體 104 矽先質 1 0 5 氧化劑 106 ΝΗ3 1 1 0 注射器 I 1 2 排放口Si (NRR) 4 + NH3 + O3 — SiOxNy (2) where the silicon precursor is SKNR1! ^ 2) *, R] or R2 = H, C "C6 alkyl, cyclic alkyl, F-substituted alkyl , Or Si (NR) R2) 4_xLx (X = 1, 2 or 3), where L = H or C1 In formula (2), a mixture of NH3 and 03 gas is used to deposit silicon oxynitride (SiOxNy) at low temperature. In addition to semiconductor applications, SiOxNy is also an important material for optical applications, because the refractive index changes between 1.25 of Si 02 and 2.0 of silicon nitride. As shown in the reaction of formula (1), amine The Si-N bond in the silyl silane or silyl ammonium amine compound is quite unstable and reacts with ozone at low temperature, so that the low temperature CVD method is performed at less than 400 ° C. In this feature of the present invention, ammonia (N Η 3 The gas flow rate is in the range of about 10 sccm to 2000 sccm, preferably in the range of about 100 sccm to 2000 sccm. This novel method can be used for the formation of doped and undoped Si02. This method Applications manufactured at 1C include, but are not limited to, metal pre-dielectrics (PMD), shallow trench isolation (STI), trench linings, and positioning dielectrics. In another feature of the invention, changing the pressure In order to make the method most suitable for different applications. With reference to formulas (1) and (2), this reaction can be performed at atmospheric pressure with good results (5) (5) 200403726, or the reaction can be as high as about 1 millitorr to about 8 〇〇tor in the pressure range. For example, the reaction can be performed at reduced pressure to further improve the step coverage on non-planar substrates. Alternatively, in PMD applications where step coverage is less stringent, it can be Higher pressure is used. Generally, the higher the pressure, the higher the reaction rate and the resulting deposition rate. The substrate used in the present invention is basically silicon. However, other substrates such as SiC, SOI, flat plate, tungsten or Aluminum) instead of silicon is still within the scope and spirit of the present invention. The choice of substrate depends on specific requirements. The present invention can be known deposition systems (such as: commonly used CVD, PECVD, spray pyrolysis, arc spray deposition) Or ALD system). Referring to FIG. 1, it is a simplified cross-sectional view of a C v D system 10 suitable for implementing the method of the present invention. A silicon wafer 100 is loaded into a deposition tank and a wafer carrier is used. Or carrier 102. This method Can be applied at low or near atmospheric pressure. In this processing tank 101, the wafer 100 is heated to the deposition temperature by a heater (preferably located in the carrier 102). It is used in the CVD method and diluted The gas 103 is introduced into the tank 101 through a syringe 110 to establish a processing pressure. Thereafter, a conventional gas transportation method commonly used in the semiconductor and thin film industries, a silicon precursor 104 and an oxidizing agent 105 is used (for deposition of SiOxNy, there is also NH3 106) gas is introduced into the tank. The reactant gas is transported close to the wafer. The reactant gases are mixed and reacted to form a desired material layer on the wafer surface. After an appropriate time to reach the target thickness, turn off the silicon precursor and oxidant / NH3 gas stream. Preferably, a dilute inert gas stream is sent to the tank to remove residual reactants in the tank through the discharge port 1 1 2. After a suitable scrubbing time, the processing is complete and the wafer is removed from the processing tank. Although the illustrative embodiment of the present invention is CVD deposition, the reactions (6) (6) 200403726 and methods described herein may also advantageously take advantage of other deposition techniques (including plasma enhanced CVD (PECVD), spray pyrolysis, Arc spray or cathodic arc spray deposition and spin-on-glass (aqueous chemical deposition) are used to deposit dielectric films. The invention can also be used for atomic layer deposition (ALD), where reactants can be transported separately. The invention has been described with the details and characteristics required by the patent law. The applicants and those who want to be protected in the patent certificate are described in the scope of the attached application patent. [Simplified illustration of the drawing] In the detailed description and using the drawings The invention is further described, in which: the one shown in Figure 1 is a cVD device suitable for carrying out the method of the invention. [Symbol description] 10 CVD system 1 0 0 ί wafer 101 deposition tank 1 0 2 wafer carrier or carrier 103 dilution gas 104 silicon precursor 1 0 5 oxidant 106 Ν 3 1 1 0 syringe I 1 2 discharge port

Claims (1)

200403726 ⑴ 拾、申請專利範圍 1 · 一種在槽中使介電層源積於底質上的方法，包 含： 使底質暴於包含氧化劑氣體和砂先質的反應物氣體， 其中氧化劑氣體包括臭氧，而矽先質包括甲砂院基醯 胺和胺基甲砂院中之至少一者’且其中當反應物氣體存在 於槽中時，槽溫度在接近20 °C至400 t範圍。 2 .如申請專利範圍第1項之方法，其中當反應物氣 體存在於槽中時，槽中壓力在1毫托耳至76〇托耳範圍。 3 . 如申S靑專利範圍第1項之方法，其中藉著使反應 物氣體在槽中流過底質上，而使底質暴於反應物氣體。 4 . 如申請專利範圍第3項之方法，其中矽先質氣體 流率爲lsccm至lOOOsccm，而臭氧氣體流率爲r〇至 2 0 0 0 s c c m 〇 5 · 如申請專利範圍第4項之方法，其進一步包含倂 流一稀釋氣體於反應物氣體。 6. 如申請專利範圍第1項之方法，其中該反應物氣 體另包括氨。 7. 一種在槽中使氧氮化矽澱積於底質上的方法，包 含： 使底質暴於包含氧化劑氣體、氨和矽先質的反應物氣 體， 其中氧化劑氣體包括臭氧，而矽先質包括甲矽烷基醯 胺和胺基甲矽烷中之至少一者，其中當反應物氣體存在於 -10- U· fr (2) (2)200403726 槽中時，槽溫度接近20°C至40(TC範圍。 8 · 如申請專利範圍第7項之方法，其中當反應物氣 體存在於槽中時，槽中壓力在1毫托耳至7 6〇托耳範圍。 9 · 如申請專利範圍弟8項之方法，其中藉著使反應、 物氣體在槽中流過底質上，而使底質暴於反應物氣p。 10.如申請專利¥(3圍弟9項之方法，其中砂先皙氣體 流率爲1 s c c m至1 0 0 0 s c c m，而臭氧氣體流率爲1 〇至 2 0 0 0 s c c m ° 11·如申請專利範圍第1 〇項之方法，其進一步包含倂 流一稀釋氣體於反應物氣體。 1 2 ·如申請專利範圍第1 1項之方法，其中該稀釋氣體 是惰性氣體。 13.如申請專利範圍第1 2項之方法，其中該惰性氣體 是氣或氮。 14 ·——種在槽中使氧化矽澱積於底質上的方法，包含 在槽中，於底質存在時，使臭氧和矽先質反應，其中 槽溫度低於400 °C，而矽先質包含甲矽烷基醯胺和胺基甲 矽烷中之至少一者，且氧化劑氣體包含臭氧。 15·如申請專利範圍第1 4項之方法，其進一步包含使 氨與氧化劑氣體和砂先質反應。 16. 如申請專利範圍第1 4項之方法，其進一步包含當 在槽中於底質存在時使氧化劑氣體和矽先質反應的步驟期 間，使一惰性氣體流過槽中。 17. 如申請專利範圍第14項之方法，其中溫度在20至 -11 - 200403726 (3) 4 0 0 °C範圍200403726 ⑴ Pickup, patent application scope 1 · A method for depositing a dielectric layer on a substrate in a tank, comprising: exposing the substrate to a reactant gas containing an oxidant gas and a sand precursor, wherein the oxidant gas includes ozone The silicon precursor includes at least one of methylamine and amidoamine, and when the reactant gas is present in the tank, the tank temperature is in the range of approximately 20 ° C to 400 t. 2. The method according to item 1 of the patent application range, wherein when the reactant gas is present in the tank, the pressure in the tank is in the range of 1 mTorr to 760 Torr. 3. The method of claim 1 of the patent scope, wherein the substrate is exposed to the reactant gas by flowing the reactant gas through the substrate in the tank. 4. The method according to item 3 of the patent application, wherein the silicon precursor gas flow rate is lsccm to 1000 sccm, and the ozone gas flow rate is r0 to 2000 scm 〇5. It further comprises flowing a diluent gas to the reactant gas. 6. The method of claim 1 in which the reactant gas further includes ammonia. 7. A method for depositing silicon oxynitride on a substrate in a tank, comprising: exposing the substrate to a reactant gas containing an oxidant gas, ammonia, and a silicon precursor, wherein the oxidant gas includes ozone, and the silicon first The substance includes at least one of silylamidoamine and aminosilane, wherein when the reactant gas is present in the -10-U · fr (2) (2) 200403726 tank, the tank temperature is close to 20 ° C to 40 ° C. (TC range. 8) The method according to item 7 of the patent application range, wherein when the reactant gas is present in the tank, the pressure in the tank is in the range of 1 millitorr to 760 torr. 9 The method of item 8, wherein the substrate is exposed to the reactant gas p by passing the reaction and material gas through the substrate in the tank. 10. For example, the method of item 9 of the patent application (where the sand is first) The flow rate of white gas is from 1 sccm to 100 sccm, and the flow rate of ozone gas is from 10 to 200 sccm ° 11. As in the method of claim 10, it further includes a flow of diluent gas In reactant gas. 1 2 · The method according to item 11 of the patent application scope, wherein the dilute The gas is an inert gas. 13. The method according to item 12 of the patent application scope, wherein the inert gas is a gas or nitrogen. 14 · ——A method for depositing silicon oxide on a substrate in a tank, including the tank In the presence of a substrate, ozone and silicon precursors are reacted, wherein the tank temperature is lower than 400 ° C, and the silicon precursor contains at least one of silylamidoamine and aminosilane, and the oxidant gas contains Ozone. 15. The method of claim 14 in the scope of patent application, further comprising reacting ammonia with an oxidant gas and a sand precursor. 16. The method of claim 14 in the scope of patent application, further comprising During the step of reacting the oxidant gas with the silicon precursor in the presence of the substrate, an inert gas is caused to flow through the tank. 17. The method according to item 14 of the patent application, wherein the temperature is 20 to -11-200403726 (3) 4 0 0 ° C range
TW92119580A 2002-07-19 2003-07-17 Low temperature dielectric deposition using aminosilane and ozone TW200403726A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US39674602P 2002-07-19 2002-07-19

Publications (1)

Publication Number Publication Date
TW200403726A true TW200403726A (en) 2004-03-01

Family

ID=30770945

Family Applications (1)

Application Number Title Priority Date Filing Date
TW92119580A TW200403726A (en) 2002-07-19 2003-07-17 Low temperature dielectric deposition using aminosilane and ozone

Country Status (5)

Country Link
JP (1) JP2005534179A (en)
CN (1) CN1643674A (en)
AU (1) AU2003256559A1 (en)
TW (1) TW200403726A (en)
WO (1) WO2004010467A2 (en)

Families Citing this family (331)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7049200B2 (en) * 2004-05-25 2006-05-23 Applied Materials Inc. Method for forming a low thermal budget spacer
US7875556B2 (en) 2005-05-16 2011-01-25 Air Products And Chemicals, Inc. Precursors for CVD silicon carbo-nitride and silicon nitride films
US7875312B2 (en) * 2006-05-23 2011-01-25 Air Products And Chemicals, Inc. Process for producing silicon oxide films for organoaminosilane precursors
US8530361B2 (en) 2006-05-23 2013-09-10 Air Products And Chemicals, Inc. Process for producing silicon and oxide films from organoaminosilane precursors
KR100888186B1 (en) * 2007-08-31 2009-03-10 주식회사 테스 Method of forming an insulating film
JP4959733B2 (en) 2008-02-01 2012-06-27 東京エレクトロン株式会社 Thin film forming method, thin film forming apparatus, and program
US8129555B2 (en) * 2008-08-12 2012-03-06 Air Products And Chemicals, Inc. Precursors for depositing silicon-containing films and methods for making and using same
US10378106B2 (en) 2008-11-14 2019-08-13 Asm Ip Holding B.V. Method of forming insulation film by modified PEALD
US8197915B2 (en) * 2009-04-01 2012-06-12 Asm Japan K.K. Method of depositing silicon oxide film by plasma enhanced atomic layer deposition at low temperature
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US8802201B2 (en) 2009-08-14 2014-08-12 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US8912353B2 (en) 2010-06-02 2014-12-16 Air Products And Chemicals, Inc. Organoaminosilane precursors and methods for depositing films comprising same
US8771807B2 (en) 2011-05-24 2014-07-08 Air Products And Chemicals, Inc. Organoaminosilane precursors and methods for making and using same
US9312155B2 (en) 2011-06-06 2016-04-12 Asm Japan K.K. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US9793148B2 (en) 2011-06-22 2017-10-17 Asm Japan K.K. Method for positioning wafers in multiple wafer transport
US10364496B2 (en) 2011-06-27 2019-07-30 Asm Ip Holding B.V. Dual section module having shared and unshared mass flow controllers
US10854498B2 (en) 2011-07-15 2020-12-01 Asm Ip Holding B.V. Wafer-supporting device and method for producing same
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
US9128218B2 (en) * 2011-12-29 2015-09-08 Visera Technologies Company Limited Microlens structure and fabrication method thereof
US8946830B2 (en) 2012-04-04 2015-02-03 Asm Ip Holdings B.V. Metal oxide protective layer for a semiconductor device
US9558931B2 (en) 2012-07-27 2017-01-31 Asm Ip Holding B.V. System and method for gas-phase sulfur passivation of a semiconductor surface
US9659799B2 (en) 2012-08-28 2017-05-23 Asm Ip Holding B.V. Systems and methods for dynamic semiconductor process scheduling
US9021985B2 (en) 2012-09-12 2015-05-05 Asm Ip Holdings B.V. Process gas management for an inductively-coupled plasma deposition reactor
US9324811B2 (en) 2012-09-26 2016-04-26 Asm Ip Holding B.V. Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US9640416B2 (en) 2012-12-26 2017-05-02 Asm Ip Holding B.V. Single-and dual-chamber module-attachable wafer-handling chamber
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US9589770B2 (en) 2013-03-08 2017-03-07 Asm Ip Holding B.V. Method and systems for in-situ formation of intermediate reactive species
US9484191B2 (en) 2013-03-08 2016-11-01 Asm Ip Holding B.V. Pulsed remote plasma method and system
US8993054B2 (en) 2013-07-12 2015-03-31 Asm Ip Holding B.V. Method and system to reduce outgassing in a reaction chamber
US9018111B2 (en) 2013-07-22 2015-04-28 Asm Ip Holding B.V. Semiconductor reaction chamber with plasma capabilities
US9793115B2 (en) 2013-08-14 2017-10-17 Asm Ip Holding B.V. Structures and devices including germanium-tin films and methods of forming same
US9240412B2 (en) 2013-09-27 2016-01-19 Asm Ip Holding B.V. Semiconductor structure and device and methods of forming same using selective epitaxial process
US9556516B2 (en) 2013-10-09 2017-01-31 ASM IP Holding B.V Method for forming Ti-containing film by PEALD using TDMAT or TDEAT
US10179947B2 (en) 2013-11-26 2019-01-15 Asm Ip Holding B.V. Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US10167557B2 (en) 2014-03-18 2019-01-01 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
US9447498B2 (en) 2014-03-18 2016-09-20 Asm Ip Holding B.V. Method for performing uniform processing in gas system-sharing multiple reaction chambers
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US9404587B2 (en) 2014-04-24 2016-08-02 ASM IP Holding B.V Lockout tagout for semiconductor vacuum valve
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US9543180B2 (en) 2014-08-01 2017-01-10 Asm Ip Holding B.V. Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum
US9890456B2 (en) 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US9657845B2 (en) 2014-10-07 2017-05-23 Asm Ip Holding B.V. Variable conductance gas distribution apparatus and method
KR102300403B1 (en) 2014-11-19 2021-09-09 에이에스엠 아이피 홀딩 비.브이. Method of depositing thin film
KR102263121B1 (en) 2014-12-22 2021-06-09 에이에스엠 아이피 홀딩 비.브이. Semiconductor device and manufacuring method thereof
US9478415B2 (en) 2015-02-13 2016-10-25 Asm Ip Holding B.V. Method for forming film having low resistance and shallow junction depth
US10529542B2 (en) 2015-03-11 2020-01-07 Asm Ip Holdings B.V. Cross-flow reactor and method
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US10600673B2 (en) 2015-07-07 2020-03-24 Asm Ip Holding B.V. Magnetic susceptor to baseplate seal
US9899291B2 (en) 2015-07-13 2018-02-20 Asm Ip Holding B.V. Method for protecting layer by forming hydrocarbon-based extremely thin film
US10043661B2 (en) 2015-07-13 2018-08-07 Asm Ip Holding B.V. Method for protecting layer by forming hydrocarbon-based extremely thin film
US10083836B2 (en) 2015-07-24 2018-09-25 Asm Ip Holding B.V. Formation of boron-doped titanium metal films with high work function
US10087525B2 (en) 2015-08-04 2018-10-02 Asm Ip Holding B.V. Variable gap hard stop design
US9647114B2 (en) 2015-08-14 2017-05-09 Asm Ip Holding B.V. Methods of forming highly p-type doped germanium tin films and structures and devices including the films
US9711345B2 (en) 2015-08-25 2017-07-18 Asm Ip Holding B.V. Method for forming aluminum nitride-based film by PEALD
US9960072B2 (en) 2015-09-29 2018-05-01 Asm Ip Holding B.V. Variable adjustment for precise matching of multiple chamber cavity housings
US9909214B2 (en) 2015-10-15 2018-03-06 Asm Ip Holding B.V. Method for depositing dielectric film in trenches by PEALD
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
US10322384B2 (en) 2015-11-09 2019-06-18 Asm Ip Holding B.V. Counter flow mixer for process chamber
US9455138B1 (en) 2015-11-10 2016-09-27 Asm Ip Holding B.V. Method for forming dielectric film in trenches by PEALD using H-containing gas
US9607837B1 (en) 2015-12-21 2017-03-28 Asm Ip Holding B.V. Method for forming silicon oxide cap layer for solid state diffusion process
US9735024B2 (en) 2015-12-28 2017-08-15 Asm Ip Holding B.V. Method of atomic layer etching using functional group-containing fluorocarbon
US9627221B1 (en) 2015-12-28 2017-04-18 Asm Ip Holding B.V. Continuous process incorporating atomic layer etching
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10468251B2 (en) 2016-02-19 2019-11-05 Asm Ip Holding B.V. Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
US9754779B1 (en) 2016-02-19 2017-09-05 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10501866B2 (en) 2016-03-09 2019-12-10 Asm Ip Holding B.V. Gas distribution apparatus for improved film uniformity in an epitaxial system
US10343920B2 (en) 2016-03-18 2019-07-09 Asm Ip Holding B.V. Aligned carbon nanotubes
US9892913B2 (en) 2016-03-24 2018-02-13 Asm Ip Holding B.V. Radial and thickness control via biased multi-port injection settings
US10190213B2 (en) 2016-04-21 2019-01-29 Asm Ip Holding B.V. Deposition of metal borides
US10087522B2 (en) 2016-04-21 2018-10-02 Asm Ip Holding B.V. Deposition of metal borides
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US10032628B2 (en) 2016-05-02 2018-07-24 Asm Ip Holding B.V. Source/drain performance through conformal solid state doping
KR102592471B1 (en) 2016-05-17 2023-10-20 에이에스엠 아이피 홀딩 비.브이. Method of forming metal interconnection and method of fabricating semiconductor device using the same
US10388509B2 (en) 2016-06-28 2019-08-20 Asm Ip Holding B.V. Formation of epitaxial layers via dislocation filtering
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US9793135B1 (en) 2016-07-14 2017-10-17 ASM IP Holding B.V Method of cyclic dry etching using etchant film
US10714385B2 (en) 2016-07-19 2020-07-14 Asm Ip Holding B.V. Selective deposition of tungsten
US10381226B2 (en) 2016-07-27 2019-08-13 Asm Ip Holding B.V. Method of processing substrate
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10395919B2 (en) 2016-07-28 2019-08-27 Asm Ip Holding B.V. Method and apparatus for filling a gap
KR102532607B1 (en) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus and method of operating the same
US10177025B2 (en) 2016-07-28 2019-01-08 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10090316B2 (en) 2016-09-01 2018-10-02 Asm Ip Holding B.V. 3D stacked multilayer semiconductor memory using doped select transistor channel
US10410943B2 (en) 2016-10-13 2019-09-10 Asm Ip Holding B.V. Method for passivating a surface of a semiconductor and related systems
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10643904B2 (en) 2016-11-01 2020-05-05 Asm Ip Holdings B.V. Methods for forming a semiconductor device and related semiconductor device structures
US10435790B2 (en) 2016-11-01 2019-10-08 Asm Ip Holding B.V. Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
US10229833B2 (en) 2016-11-01 2019-03-12 Asm Ip Holding B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10134757B2 (en) 2016-11-07 2018-11-20 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
KR102546317B1 (en) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. Gas supply unit and substrate processing apparatus including the same
US10340135B2 (en) 2016-11-28 2019-07-02 Asm Ip Holding B.V. Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
KR20180068582A (en) 2016-12-14 2018-06-22 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US9916980B1 (en) 2016-12-15 2018-03-13 Asm Ip Holding B.V. Method of forming a structure on a substrate
KR20180070971A (en) 2016-12-19 2018-06-27 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10655221B2 (en) 2017-02-09 2020-05-19 Asm Ip Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US10283353B2 (en) 2017-03-29 2019-05-07 Asm Ip Holding B.V. Method of reforming insulating film deposited on substrate with recess pattern
US10103040B1 (en) 2017-03-31 2018-10-16 Asm Ip Holding B.V. Apparatus and method for manufacturing a semiconductor device
USD830981S1 (en) 2017-04-07 2018-10-16 Asm Ip Holding B.V. Susceptor for semiconductor substrate processing apparatus
KR102457289B1 (en) 2017-04-25 2022-10-21 에이에스엠 아이피 홀딩 비.브이. Method for depositing a thin film and manufacturing a semiconductor device
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10446393B2 (en) 2017-05-08 2019-10-15 Asm Ip Holding B.V. Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10504742B2 (en) 2017-05-31 2019-12-10 Asm Ip Holding B.V. Method of atomic layer etching using hydrogen plasma
US10886123B2 (en) 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10685834B2 (en) 2017-07-05 2020-06-16 Asm Ip Holdings B.V. Methods for forming a silicon germanium tin layer and related semiconductor device structures
KR20190009245A (en) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. Methods for forming a semiconductor device structure and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US10312055B2 (en) 2017-07-26 2019-06-04 Asm Ip Holding B.V. Method of depositing film by PEALD using negative bias
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10605530B2 (en) 2017-07-26 2020-03-31 Asm Ip Holding B.V. Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US10249524B2 (en) 2017-08-09 2019-04-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
US10236177B1 (en) 2017-08-22 2019-03-19 ASM IP Holding B.V.. Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures
USD900036S1 (en) 2017-08-24 2020-10-27 Asm Ip Holding B.V. Heater electrical connector and adapter
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
KR102491945B1 (en) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
US10607895B2 (en) 2017-09-18 2020-03-31 Asm Ip Holdings B.V. Method for forming a semiconductor device structure comprising a gate fill metal
KR102630301B1 (en) 2017-09-21 2024-01-29 에이에스엠 아이피 홀딩 비.브이. Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10319588B2 (en) 2017-10-10 2019-06-11 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
KR102443047B1 (en) 2017-11-16 2022-09-14 에이에스엠 아이피 홀딩 비.브이. Method of processing a substrate and a device manufactured by the same
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
WO2019103610A1 (en) 2017-11-27 2019-05-31 Asm Ip Holding B.V. Apparatus including a clean mini environment
CN111316417B (en) 2017-11-27 2023-12-22 阿斯莫Ip控股公司 Storage device for storing wafer cassettes for use with batch ovens
US10290508B1 (en) 2017-12-05 2019-05-14 Asm Ip Holding B.V. Method for forming vertical spacers for spacer-defined patterning
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
WO2019142055A2 (en) 2018-01-19 2019-07-25 Asm Ip Holding B.V. Method for depositing a gap-fill layer by plasma-assisted deposition
TW202325889A (en) 2018-01-19 2023-07-01 荷蘭商Ａｓｍ 智慧財產控股公司 Deposition method
USD903477S1 (en) 2018-01-24 2020-12-01 Asm Ip Holdings B.V. Metal clamp
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US10535516B2 (en) 2018-02-01 2020-01-14 Asm Ip Holdings B.V. Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
EP3737779A1 (en) 2018-02-14 2020-11-18 ASM IP Holding B.V. A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
US10658181B2 (en) 2018-02-20 2020-05-19 Asm Ip Holding B.V. Method of spacer-defined direct patterning in semiconductor fabrication
KR102636427B1 (en) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. Substrate processing method and apparatus
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
KR102646467B1 (en) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US10510536B2 (en) 2018-03-29 2019-12-17 Asm Ip Holding B.V. Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
KR102501472B1 (en) 2018-03-30 2023-02-20 에이에스엠 아이피 홀딩 비.브이. Substrate processing method
TWI811348B (en) 2018-05-08 2023-08-11 荷蘭商Ａｓｍ 智慧財產控股公司 Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures
TW202349473A (en) 2018-05-11 2023-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Methods for forming a doped metal carbide film on a substrate and related semiconductor device structures
KR102596988B1 (en) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. Method of processing a substrate and a device manufactured by the same
US11270899B2 (en) 2018-06-04 2022-03-08 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
KR102568797B1 (en) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. Substrate processing system
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
JP2021529254A (en) 2018-06-27 2021-10-28 エーエスエム・アイピー・ホールディング・ベー・フェー Periodic deposition methods for forming metal-containing materials and films and structures containing metal-containing materials
US11499222B2 (en) 2018-06-27 2022-11-15 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
KR20200002519A (en) 2018-06-29 2020-01-08 에이에스엠 아이피 홀딩 비.브이. Method for depositing a thin film and manufacturing a semiconductor device
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
US10483099B1 (en) 2018-07-26 2019-11-19 Asm Ip Holding B.V. Method for forming thermally stable organosilicon polymer film
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
KR20200030162A (en) 2018-09-11 2020-03-20 에이에스엠 아이피 홀딩 비.브이. Method for deposition of a thin film
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
CN110970344A (en) 2018-10-01 2020-04-07 Asm Ip控股有限公司 Substrate holding apparatus, system including the same, and method of using the same
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (en) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. Substrate support unit and apparatuses for depositing thin film and processing the substrate including the same
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
KR102546322B1 (en) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus and substrate processing method
KR102605121B1 (en) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus and substrate processing method
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US10381219B1 (en) 2018-10-25 2019-08-13 Asm Ip Holding B.V. Methods for forming a silicon nitride film
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR20200051105A (en) 2018-11-02 2020-05-13 에이에스엠 아이피 홀딩 비.브이. Substrate support unit and substrate processing apparatus including the same
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10559458B1 (en) 2018-11-26 2020-02-11 Asm Ip Holding B.V. Method of forming oxynitride film
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (en) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. A method for cleaning a substrate processing apparatus
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP2020096183A (en) 2018-12-14 2020-06-18 エーエスエム・アイピー・ホールディング・ベー・フェー Method of forming device structure using selective deposition of gallium nitride, and system for the same
TWI819180B (en) 2019-01-17 2023-10-21 荷蘭商Ａｓｍ 智慧財產控股公司 Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
KR20200091543A (en) 2019-01-22 2020-07-31 에이에스엠 아이피 홀딩 비.브이. Semiconductor processing device
CN111524788B (en) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 Method for topologically selective film formation of silicon oxide
KR102626263B1 (en) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. Cyclical deposition method including treatment step and apparatus for same
TW202104632A (en) 2019-02-20 2021-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
US11482533B2 (en) 2019-02-20 2022-10-25 Asm Ip Holding B.V. Apparatus and methods for plug fill deposition in 3-D NAND applications
JP2020136678A (en) 2019-02-20 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー Method for filing concave part formed inside front surface of base material, and device
TW202100794A (en) 2019-02-22 2021-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Substrate processing apparatus and method for processing substrate
KR20200108243A (en) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. Structure Including SiOC Layer and Method of Forming Same
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
KR20200108242A (en) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. Method for Selective Deposition of Silicon Nitride Layer and Structure Including Selectively-Deposited Silicon Nitride Layer
JP2020167398A (en) 2019-03-28 2020-10-08 エーエスエム・アイピー・ホールディング・ベー・フェー Door opener and substrate processing apparatus provided therewith
KR20200116855A (en) 2019-04-01 2020-10-13 에이에스엠 아이피 홀딩 비.브이. Method of manufacturing semiconductor device
US11447864B2 (en) 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
KR20200125453A (en) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. Gas-phase reactor system and method of using same
KR20200130118A (en) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. Method for Reforming Amorphous Carbon Polymer Film
KR20200130121A (en) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. Chemical source vessel with dip tube
KR20200130652A (en) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. Method of depositing material onto a surface and structure formed according to the method
JP2020188255A (en) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． Wafer boat handling device, vertical batch furnace, and method
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141002A (en) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. Method of using a gas-phase reactor system including analyzing exhausted gas
KR20200143254A (en) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. Method of forming an electronic structure using an reforming gas, system for performing the method, and structure formed using the method
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
KR20210005515A (en) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. Temperature control assembly for substrate processing apparatus and method of using same
JP2021015791A (en) 2019-07-09 2021-02-12 エーエスエム アイピー ホールディング ビー．ブイ． Plasma device and substrate processing method using coaxial waveguide
CN112216646A (en) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 Substrate supporting assembly and substrate processing device comprising same
KR20210010307A (en) 2019-07-16 2021-01-27 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
KR20210010816A (en) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. Radical assist ignition plasma system and method
KR20210010820A (en) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. Methods of forming silicon germanium structures
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
JP2021019198A (en) 2019-07-19 2021-02-15 エーエスエム・アイピー・ホールディング・ベー・フェー Method of forming topology-controlled amorphous carbon polymer film
CN112309843A (en) 2019-07-29 2021-02-02 Asm Ip私人控股有限公司 Selective deposition method for achieving high dopant doping
CN112309899A (en) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 Substrate processing apparatus
CN112309900A (en) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 Substrate processing apparatus
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
KR20210018759A (en) 2019-08-05 2021-02-18 에이에스엠 아이피 홀딩 비.브이. Liquid level sensor for a chemical source vessel
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
JP2021031769A (en) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー．ブイ． Production apparatus of mixed gas of film deposition raw material and film deposition apparatus
KR20210024423A (en) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. Method for forming a structure with a hole
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210024420A (en) 2019-08-23 2021-03-05 에이에스엠 아이피 홀딩 비.브이. Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane
KR20210029090A (en) 2019-09-04 2021-03-15 에이에스엠 아이피 홀딩 비.브이. Methods for selective deposition using a sacrificial capping layer
KR20210029663A (en) 2019-09-05 2021-03-16 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (en) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 Method for forming topologically selective silicon oxide film by cyclic plasma enhanced deposition process
TW202129060A (en) 2019-10-08 2021-08-01 荷蘭商Ａｓｍ Ｉｐ控股公司 Substrate processing device, and substrate processing method
TW202115273A (en) 2019-10-10 2021-04-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of forming a photoresist underlayer and structure including same
KR20210045930A (en) 2019-10-16 2021-04-27 에이에스엠 아이피 홀딩 비.브이. Method of Topology-Selective Film Formation of Silicon Oxide
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR20210047808A (en) 2019-10-21 2021-04-30 에이에스엠 아이피 홀딩 비.브이. Apparatus and methods for selectively etching films
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR20210054983A (en) 2019-11-05 2021-05-14 에이에스엠 아이피 홀딩 비.브이. Structures with doped semiconductor layers and methods and systems for forming same
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR20210062561A (en) 2019-11-20 2021-05-31 에이에스엠 아이피 홀딩 비.브이. Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure
CN112951697A (en) 2019-11-26 2021-06-11 Asm Ip私人控股有限公司 Substrate processing apparatus
KR20210065848A (en) 2019-11-26 2021-06-04 에이에스엠 아이피 홀딩 비.브이. Methods for selectivley forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
CN112885693A (en) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 Substrate processing apparatus
CN112885692A (en) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 Substrate processing apparatus
JP2021090042A (en) 2019-12-02 2021-06-10 エーエスエム アイピー ホールディング ビー．ブイ． Substrate processing apparatus and substrate processing method
KR20210070898A (en) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
TW202125596A (en) 2019-12-17 2021-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of forming vanadium nitride layer and structure including the vanadium nitride layer
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
KR20210095050A (en) 2020-01-20 2021-07-30 에이에스엠 아이피 홀딩 비.브이. Method of forming thin film and method of modifying surface of thin film
TW202130846A (en) 2020-02-03 2021-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of forming structures including a vanadium or indium layer
KR20210100010A (en) 2020-02-04 2021-08-13 에이에스엠 아이피 홀딩 비.브이. Method and apparatus for transmittance measurements of large articles
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
KR20210116240A (en) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. Substrate handling device with adjustable joints
US11876356B2 (en) 2020-03-11 2024-01-16 Asm Ip Holding B.V. Lockout tagout assembly and system and method of using same
CN113394086A (en) 2020-03-12 2021-09-14 Asm Ip私人控股有限公司 Method for producing a layer structure having a target topological profile
KR20210124042A (en) 2020-04-02 2021-10-14 에이에스엠 아이피 홀딩 비.브이. Thin film forming method
TW202146689A (en) 2020-04-03 2021-12-16 荷蘭商Ａｓｍ Ｉｐ控股公司 Method for forming barrier layer and method for manufacturing semiconductor device
TW202145344A (en) 2020-04-08 2021-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Apparatus and methods for selectively etching silcon oxide films
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
KR20210132600A (en) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element
TW202140831A (en) 2020-04-24 2021-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of forming vanadium nitride–containing layer and structure comprising the same
KR20210132605A (en) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. Vertical batch furnace assembly comprising a cooling gas supply
KR20210134226A (en) 2020-04-29 2021-11-09 에이에스엠 아이피 홀딩 비.브이. Solid source precursor vessel
KR20210134869A (en) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Fast FOUP swapping with a FOUP handler
KR20210141379A (en) 2020-05-13 2021-11-23 에이에스엠 아이피 홀딩 비.브이. Laser alignment fixture for a reactor system
KR20210143653A (en) 2020-05-19 2021-11-29 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
KR20210145078A (en) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. Structures including multiple carbon layers and methods of forming and using same
TW202201602A (en) 2020-05-29 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Substrate processing device
TW202218133A (en) 2020-06-24 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method for forming a layer provided with silicon
TW202217953A (en) 2020-06-30 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Substrate processing method
KR20220010438A (en) 2020-07-17 2022-01-25 에이에스엠 아이피 홀딩 비.브이. Structures and methods for use in photolithography
TW202204662A (en) 2020-07-20 2022-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method and system for depositing molybdenum layers
KR20220027026A (en) 2020-08-26 2022-03-07 에이에스엠 아이피 홀딩 비.브이. Method and system for forming metal silicon oxide and metal silicon oxynitride
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
TW202229613A (en) 2020-10-14 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of depositing material on stepped structure
KR20220053482A (en) 2020-10-22 2022-04-29 에이에스엠 아이피 홀딩 비.브이. Method of depositing vanadium metal, structure, device and a deposition assembly
TW202223136A (en) 2020-10-28 2022-06-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method for forming layer on substrate, and semiconductor processing system
KR20220076343A (en) 2020-11-30 2022-06-08 에이에스엠 아이피 홀딩 비.브이. an injector configured for arrangement within a reaction chamber of a substrate processing apparatus
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
TW202231903A (en) 2020-12-22 2022-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Transition metal deposition method, transition metal layer, and deposition assembly for depositing transition metal on substrate
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6235650B1 (en) * 1997-12-29 2001-05-22 Vanguard International Semiconductor Corporation Method for improved semiconductor device reliability
US5976991A (en) * 1998-06-11 1999-11-02 Air Products And Chemicals, Inc. Deposition of silicon dioxide and silicon oxynitride using bis(tertiarybutylamino) silane

Also Published As

Publication number Publication date
AU2003256559A1 (en) 2004-02-09
WO2004010467A3 (en) 2004-06-03
AU2003256559A8 (en) 2004-02-09
CN1643674A (en) 2005-07-20
JP2005534179A (en) 2005-11-10
WO2004010467A2 (en) 2004-01-29

Similar Documents

Publication Publication Date Title
TW200403726A (en) Low temperature dielectric deposition using aminosilane and ozone
US7915139B1 (en) CVD flowable gap fill
US7629227B1 (en) CVD flowable gap fill
JP6058043B2 (en) Silicon oxide and silicon oxynitride films, methods for forming them, and compositions for chemical vapor deposition
TWI374887B (en) Precursors for depositing silicon-containing films and methods for making and using same
TW200422424A (en) Low temperature deposition of silicon oxides and oxynitrides
KR102308644B1 (en) Silicon precursor compounds, method of preparing the same, and method of forming silicon-containing films using the same
TWI774299B (en) Precursors and methods for preparing silicon-containing films
TW202204368A (en) Silicon precursor compounds and method for forming silicon-containing films
KR20050018641A (en) Low temperature dielectric deposition using aminosilane and ozone
KR101008490B1 (en) Method of depositing an oxide film using a low temperature CVD
TWI834872B (en) Method for forming carbon rich silicon-containing films and microelectronic device
TWI830206B (en) Silicon precursor compounds and method for forming silicon-containing films
TWI817139B (en) Vapor deposition precursor compounds and process of use
JP7400120B2 (en) Silicon hydrazide precursor compounds
TW202102710A (en) Method for forming carbon rich silicon-containing films