JP2007507896A5 - - Google Patents

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Publication number
JP2007507896A5
JP2007507896A5 JP2006533987A JP2006533987A JP2007507896A5 JP 2007507896 A5 JP2007507896 A5 JP 2007507896A5 JP 2006533987 A JP2006533987 A JP 2006533987A JP 2006533987 A JP2006533987 A JP 2006533987A JP 2007507896 A5 JP2007507896 A5 JP 2007507896A5
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JP
Japan
Prior art keywords
layers
lattice constant
thickness
forming
layer
Prior art date
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Application number
JP2006533987A
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English (en)
Japanese (ja)
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JP2007507896A (ja
JP4901476B2 (ja
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Priority claimed from US10/677,844 external-priority patent/US6831350B1/en
Application filed filed Critical
Publication of JP2007507896A publication Critical patent/JP2007507896A/ja
Publication of JP2007507896A5 publication Critical patent/JP2007507896A5/ja
Application granted granted Critical
Publication of JP4901476B2 publication Critical patent/JP4901476B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2006533987A 2003-10-02 2004-09-27 格子定数の異なる材料を用いる半導体構造及び同構造の形成方法 Expired - Fee Related JP4901476B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/677,844 2003-10-02
US10/677,844 US6831350B1 (en) 2003-10-02 2003-10-02 Semiconductor structure with different lattice constant materials and method for forming the same
PCT/US2004/031516 WO2005034230A1 (en) 2003-10-02 2004-09-27 Semiconductor structure with different lattice constant materials and method for forming the same

Publications (3)

Publication Number Publication Date
JP2007507896A JP2007507896A (ja) 2007-03-29
JP2007507896A5 true JP2007507896A5 (enExample) 2007-11-15
JP4901476B2 JP4901476B2 (ja) 2012-03-21

Family

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Family Applications (1)

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JP2006533987A Expired - Fee Related JP4901476B2 (ja) 2003-10-02 2004-09-27 格子定数の異なる材料を用いる半導体構造及び同構造の形成方法

Country Status (6)

Country Link
US (1) US6831350B1 (enExample)
JP (1) JP4901476B2 (enExample)
KR (1) KR101115091B1 (enExample)
CN (1) CN100487876C (enExample)
TW (1) TWI356491B (enExample)
WO (1) WO2005034230A1 (enExample)

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US8981427B2 (en) 2008-07-15 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing of small composite semiconductor materials
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US8253211B2 (en) 2008-09-24 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor sensor structures with reduced dislocation defect densities
CN102379046B (zh) 2009-04-02 2015-06-17 台湾积体电路制造股份有限公司 从晶体材料的非极性平面形成的器件及其制作方法
EP2423951B1 (en) * 2010-08-05 2016-07-20 Imec Antiphase domain boundary-free III-V compound semiconductor material on semiconductor substrate and method for manufacturing thereof
US9099421B2 (en) * 2012-10-31 2015-08-04 Taiwan Semiconductor Manufacturing Company Limited Surface profile for semiconductor region
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US10170549B2 (en) 2014-10-21 2019-01-01 Samsung Electronics Co., Ltd. Strained stacked nanosheet FETs and/or quantum well stacked nanosheet
US10249492B2 (en) * 2016-05-27 2019-04-02 International Business Machines Corporation Fabrication of compound semiconductor structures
US9735010B1 (en) 2016-05-27 2017-08-15 International Business Machines Corporation Fabrication of semiconductor fin structures
CN108807279B (zh) * 2018-06-25 2021-01-22 中国科学院微电子研究所 半导体结构与其制作方法
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