JP2007507106A - 集積回路および印刷配線板のための可変インダクタ - Google Patents
集積回路および印刷配線板のための可変インダクタ Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F21/00—Variable inductances or transformers of the signal type
- H01F21/12—Variable inductances or transformers of the signal type discontinuously variable, e.g. tapped
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F21/00—Variable inductances or transformers of the signal type
- H01F21/12—Variable inductances or transformers of the signal type discontinuously variable, e.g. tapped
- H01F2021/125—Printed variable inductor with taps, e.g. for VCO
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
- H03J2200/00—Indexing scheme relating to tuning resonant circuits and selecting resonant circuits
- H03J2200/35—Inductance tunable by switching in/out parts of the inductor
Abstract
【解決手段】1次コンダクタ、2次コンダクタ、及びスイッチを用いて集積回路上に可変インダクタを形成することが可能である。1次コンダクタはインダクタを実現しそして種々のパターン(例えば渦巻)に形成されることが可能である。2次コンダクタは1次コンダクタに近接して(例えば外側に)ループを形成する。スイッチは2次コンダクタに直列に結合し、ループを開きあるいは閉じる。インダクタのインダクタンスは、スイッチを用いてループを閉じそして開くことによって変えられる。電流源もまた2次コンダクタと直列に結合され、インダクタンスを増加しあるいは減少する何れかのために2次コンダクタ内の電流を制御するために使用されることが可能である。2個以上の別々なステップでインダクタンスを変化するために複数のループが形成されることが可能である。
【選択図】 図2Aおよび2B
Description
Z=(ω2L2 2R1+ω2M2R2+R1R2 2)/(ω2L2 2+R2 2)
−j(ω3M2L2−ω3L1L2 2−ωL1R2 2)/(ω2L2 2+R2 2)
式(1)
として表現されることが可能である。
L2はループのための2次コンダクタのインダクタンス、
R1は1次コンダクタの抵抗値、
R2は2次コンダクタの抵抗値、
Mは相互インダクタンス、そしてここで、M=k・(L1・L2)1/2、そして
ωはラジアン/秒の単位で与えられる周波数である。
Q=ωL/R 式(2)
として表現することが可能である。
Rはインダクタの抵抗値である。
Claims (28)
- 集積回路(IC)であって、
インダクタのための1次コンダクタと、
1次コンダクタに近接してループを形成する2次コンダクタと、そして
2次コンダクタと直列に結合され、そしてループを開きあるいは閉じることが可能なスイッチとを含み、インダクタのインダクタンスはスイッチを使用してループを開きあるいは閉じることによって変化される、
集積回路。 - 1次コンダクタは渦巻パターンに形成される請求項1記載の集積回路。
- さらに、2次コンダクタおよびスイッチと直列に結合された電流源とを含む請求項1記載の集積回路。
- 電流源はインダクタのインダクタンスを減少するために2次コンダクタ内の直流が第1の方向に流れることが可能な請求項3記載の集積回路。
- 電流源はインダクタのインダクタンスを増加するために2次コンダクタ内の直流が第2の方向に流れることが可能な請求項3記載の集積回路。
- 2次コンダクタは1次コンダクタの外側に配置される請求項1記載の集積回路。
- 2次コンダクタは1次コンダクタの内側に配置される請求項1記載の集積回路。
- 2次コンダクタは1次コンダクタの上の層に配置される請求項1記載の集積回路。
- 2次コンダクタは1次コンダクタの下の層に配置される請求項1記載の集積回路。
- さらに、1次コンダクタに近接して第2のループを形成する3次のコンダクタと、そして
3次のコンダクタと直列に結合されそして第2のループを開きあるいは閉じることが可能な第2のスイッチとを含む、
請求項1記載の集積回路。 - さらに、2次コンダクタおよびスイッチと直列に結合されたコンデンサを含む請求項1記載の集積回路。
- さらに、2次コンダクタおよびスイッチと直列に結合されたリアクティブ回路エレメントを含む請求項1記載の集積回路。
- 1次コンダクタは低損失金属を使用して作成された請求項1記載の集積回路。
- 2次コンダクタは低損失金属を使用して作成された請求項1記載の集積回路。
- スイッチは金属酸化物半導体(MOS)トランジスタを使用して実現された請求項1記載の集積回路。
- 2次コンダクタは1次コンダクタからあらかじめ設定された距離だけ離れて置かれ、なお、あらかじめ設定された距離は、ループが開かれそして閉じられる場合のインダクタンスの個々の変化の量に基づいて選択される、
請求項1記載の集積回路。 - さらに、1次コンダクタの2個の端部に結合されたコンデンサを含み、ここでコンデンサおよびインダクタは共振器タンクを形成している請求項1記載の集積回路。
- インダクタは電圧制御発振器(VCO)の部分である請求項1記載の集積回路。
- インダクタは濾波器の部分である請求項1記載の集積回路。
- インダクタはインピーダンス整合ネットワークの部分である請求項1記載の集積回路。
- デバイスであって、
インダクタのための1次コンダクタと、
1次コンダクタに近接してループを形成する2次コンダクタと、そして
2次コンダクタに直列に結合され、そしてループを開きあるいは閉じることが可能なスイッチとを含み、ここでインダクタのインダクタンスはスイッチを用いて閉じそして開くことによって変化されている、
デバイス。 - さらに、1次コンダクタの2個の端部に結合されたコンデンサを含み、ここでコンデンサおよびインダクタは共振器タンクを形成している
請求項21記載のデバイス。 - 集積回路(IC)であって、
インダクタのための1次コンダクタと、
1次コンダクタに近接してループを形成する2次コンダクタと、
2次コンダクタに直列に結合されそしてループを開きあるいは閉じることが可能なスイッチと、ここでインダクタのインダクタンスはスイッチを用いてループを閉じそして開くことによって変えられ、そして
1次コンダクタの2個の端部に結合されたコンデンサとを含み、
ここでコンデンサおよびインダクタは電圧制御発信器(VCO)に対する共振器タンクを形成しており、そしてここでVCOは閉じられているおよび開かれているループに対応する2個の周波数で動作可能である、
集積回路。 - コンデンサは可変コンデンサである請求項23記載の集積回路。
- 集積回路(IC)を作成するための方法であって、
インダクタのための1次コンダクタを形成し、
1次コンダクタに近接してループ内に2次コンダクタを形成し、そして
2次コンダクタと直列にスイッチを形成することを含み、
ここでスイッチはインダクタのインダクタンスを変化するためにループを開きあるいは閉じることが可能である、
方法。 - さらに、電流源を2次コンダクタおよびスイッチと直列に形成することを含む請求項25記載の方法。
- さらに、2次コンダクタおよびスイッチと直列にコンデンサを形成することを含む、請求項25記載の方法。
- さらに、1次コンダクタに近接して第2のループの中に3次のコンダクタを形成し、そして
3次のコンダクタと直列な、そして第2のループを開きあるいは閉じることが可能な第2のスイッチを形成することを含む、
請求項25記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/672,904 US7460001B2 (en) | 2003-09-25 | 2003-09-25 | Variable inductor for integrated circuit and printed circuit board |
US10/672,904 | 2003-09-25 | ||
PCT/US2004/029530 WO2005034239A2 (en) | 2003-09-25 | 2004-09-10 | Variable inductor for integrated circuit and printed circuit board |
Publications (2)
Publication Number | Publication Date |
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JP2007507106A true JP2007507106A (ja) | 2007-03-22 |
JP4740136B2 JP4740136B2 (ja) | 2011-08-03 |
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Application Number | Title | Priority Date | Filing Date |
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JP2006528040A Expired - Fee Related JP4740136B2 (ja) | 2003-09-25 | 2004-09-10 | 集積回路および印刷配線板のための可変インダクタ |
Country Status (6)
Country | Link |
---|---|
US (1) | US7460001B2 (ja) |
JP (1) | JP4740136B2 (ja) |
KR (1) | KR100807132B1 (ja) |
CN (1) | CN100464420C (ja) |
TW (1) | TWI383409B (ja) |
WO (1) | WO2005034239A2 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007123785A (ja) * | 2005-10-31 | 2007-05-17 | Taiyo Yuden Co Ltd | 可変インダクタ及びそれを利用したアンテナ装置 |
JP2008016703A (ja) * | 2006-07-07 | 2008-01-24 | Sony Corp | 可変インダクタ及びこれを用いた半導体装置 |
JP2011514661A (ja) * | 2008-01-29 | 2011-05-06 | インターナショナル・ビジネス・マシーンズ・コーポレーション | オンチップ集積電圧制御可変インダクタ、そのような可変インダクタの製作および調整方法、ならびにそのような可変インダクタを集積化する設計構造 |
JP2012060157A (ja) * | 2011-12-05 | 2012-03-22 | Sony Corp | 可変インダクタ及びこれを用いた半導体装置 |
JP2012235155A (ja) * | 2007-01-24 | 2012-11-29 | Renesas Electronics Corp | インダクタ |
JP2015111694A (ja) * | 2009-08-31 | 2015-06-18 | クゥアルコム・インコーポレイテッドQualcomm Incorporated | 切り替え可能インダクタネットワーク |
Families Citing this family (78)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7264419B2 (en) * | 2003-03-19 | 2007-09-04 | Applied Process Technology, Inc. | System and method for remediating contaminated soil and groundwater in situ |
US20050104158A1 (en) * | 2003-11-19 | 2005-05-19 | Scintera Networks, Inc. | Compact, high q inductor for integrated circuit |
KR20040072581A (ko) * | 2004-07-29 | 2004-08-18 | (주)제이씨 프로텍 | 전자기파 증폭중계기 및 이를 이용한 무선전력변환장치 |
US7432794B2 (en) * | 2004-08-16 | 2008-10-07 | Telefonaktiebolaget L M Ericsson (Publ) | Variable integrated inductor |
JP4541800B2 (ja) * | 2004-08-20 | 2010-09-08 | ルネサスエレクトロニクス株式会社 | インダクタを備えた半導体装置 |
JP2006120735A (ja) * | 2004-10-19 | 2006-05-11 | Matsushita Electric Ind Co Ltd | インダクタ装置 |
TW200633362A (en) * | 2004-11-15 | 2006-09-16 | Koninkl Philips Electronics Nv | Variable inductance circuitry for frequency control of a voltage controlled oscillator |
KR100579136B1 (ko) * | 2004-12-16 | 2006-05-12 | 한국전자통신연구원 | 가변 인덕턴스를 갖는 트랜스포머 |
KR20060091507A (ko) * | 2005-02-15 | 2006-08-21 | 삼성전자주식회사 | 병렬구조의 스위치드 가변 인덕터 회로 |
US7598838B2 (en) * | 2005-03-04 | 2009-10-06 | Seiko Epson Corporation | Variable inductor technique |
KR100794796B1 (ko) * | 2005-09-08 | 2008-01-15 | 삼성전자주식회사 | 가변 인덕터 |
KR100716848B1 (ko) * | 2005-10-17 | 2007-05-09 | 주식회사 팬택앤큐리텔 | 가변 인덕턴스를 갖는 나선형 인덕터 |
US20070146105A1 (en) * | 2005-12-28 | 2007-06-28 | Zeng Xiang Y | Complementary inductor structures |
DE102006035204B4 (de) | 2006-07-29 | 2009-10-15 | Atmel Duisburg Gmbh | Monolithisch integrierbare Schaltungsanordnung |
KR100818497B1 (ko) * | 2006-11-06 | 2008-03-31 | 삼성전기주식회사 | 대칭형 스위치 인덕터 |
EP2084723A1 (en) * | 2006-11-14 | 2009-08-05 | Nxp B.V. | Manufacturing of an electronic circuit having an inductance |
CN101188159B (zh) * | 2006-11-24 | 2011-01-12 | 阎跃军 | 分段可调电感器 |
US7847669B2 (en) * | 2006-12-06 | 2010-12-07 | Georgia Tech Research Corporation | Micro-electromechanical switched tunable inductor |
TWI336922B (en) * | 2007-01-12 | 2011-02-01 | Via Tech Inc | Spiral inductor with multi-trace structure |
US7542009B2 (en) * | 2007-03-05 | 2009-06-02 | United Microelectronics Corp. | Wireless communication device and signal receiving/transmitting method thereof |
US7688160B2 (en) * | 2007-04-12 | 2010-03-30 | Stats Chippac, Ltd. | Compact coils for high performance filters |
TWI397930B (zh) * | 2007-11-06 | 2013-06-01 | Via Tech Inc | 螺旋電感元件 |
US8270912B2 (en) * | 2007-12-12 | 2012-09-18 | Broadcom Corporation | Method and system for a transformer in an integrated circuit package |
US8089322B2 (en) * | 2008-05-15 | 2012-01-03 | Stephen M Beccue | Inductance enhanced rotary traveling wave oscillator circuit and method |
US8742857B2 (en) | 2008-05-15 | 2014-06-03 | Analog Devices, Inc. | Inductance enhanced rotary traveling wave oscillator circuit and method |
JP5617635B2 (ja) * | 2008-09-22 | 2014-11-05 | パナソニック株式会社 | 積層型電子部品 |
GB2467931A (en) | 2009-02-19 | 2010-08-25 | Cambridge Silicon Radio Ltd | Tuning circuit with mutually coupled inductors |
EP2293309A1 (fr) * | 2009-09-08 | 2011-03-09 | STmicroelectronics SA | Dispositif inductif intégré. |
US8183948B2 (en) | 2009-09-13 | 2012-05-22 | International Business Machines Corporation | Ultra-compact PLL with wide tuning range and low noise |
GB0918221D0 (en) * | 2009-10-16 | 2009-12-02 | Cambridge Silicon Radio Ltd | Inductor structure |
KR100982037B1 (ko) * | 2009-12-14 | 2010-09-13 | 주식회사 아나패스 | 신호 생성 장치 |
JP2011159953A (ja) * | 2010-01-05 | 2011-08-18 | Fujitsu Ltd | 電子回路及び電子機器 |
US20110260819A1 (en) * | 2010-04-26 | 2011-10-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Continuously tunable inductor with variable resistors |
US20110273261A1 (en) * | 2010-05-05 | 2011-11-10 | Signoff David M | Magnetically Shielded Inductor Structure |
US9142342B2 (en) * | 2010-05-17 | 2015-09-22 | Ronald Lambert Haner | Compact-area capacitive plates for use with spiral inductors having more than one turn |
US8384507B2 (en) * | 2010-06-01 | 2013-02-26 | Qualcomm Incorporated | Through via inductor or transformer in a high-resistance substrate with programmability |
US20120025623A1 (en) * | 2010-07-28 | 2012-02-02 | Qualcomm Incorporated | Multi-loop wireless power receive coil |
US8963674B2 (en) * | 2010-12-20 | 2015-02-24 | Mediatek Singapore Pte. Ltd. | Tunable inductor |
KR20120072424A (ko) * | 2010-12-24 | 2012-07-04 | 삼성전기주식회사 | 트랜스포머 |
TWI494957B (zh) * | 2011-03-03 | 2015-08-01 | Realtek Semiconductor Corp | 可變電感 |
US8922309B1 (en) * | 2011-10-17 | 2014-12-30 | Xilinx, Inc. | Devices and methods for tuning an inductor |
EP2662870A1 (en) * | 2012-05-09 | 2013-11-13 | Nxp B.V. | Tunable inductive circuits for transceivers |
US8779881B2 (en) * | 2012-09-21 | 2014-07-15 | Cambridge Silicon Radio Limited | Varying inductance |
KR102008808B1 (ko) | 2012-12-13 | 2019-10-21 | 엘지이노텍 주식회사 | 무선전력 수신장치 및 그의 제어 방법 |
US8860521B2 (en) | 2012-12-19 | 2014-10-14 | Intel IP Corporation | Variable inductor for LC oscillator |
TWI466143B (zh) * | 2013-01-25 | 2014-12-21 | Univ Nat Chunghsing | 可變電感結構、製程及耦合方法 |
US9954488B2 (en) * | 2013-03-15 | 2018-04-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Varainductor, voltage controlled oscillator including the varainductor, and phase locked loop including the varainductor |
CN103325793A (zh) * | 2013-05-27 | 2013-09-25 | 复旦大学 | 一种可实现宽频率范围调谐的片上可变电感 |
US10510476B2 (en) * | 2013-09-27 | 2019-12-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Slow wave inductive structure and method of forming the same |
US9172353B2 (en) | 2013-10-09 | 2015-10-27 | Analog Devices, Inc. | Programmable filter |
US20160308393A1 (en) * | 2013-11-11 | 2016-10-20 | Powerbyproxi Limited | Contactless power receiver and method for operating same |
US9478344B2 (en) * | 2013-12-18 | 2016-10-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Phase locked loop including a varainductor |
WO2015093462A1 (ja) * | 2013-12-20 | 2015-06-25 | 株式会社村田製作所 | 高周波回路及び該高周波回路を用いた送受信回路 |
US9306603B2 (en) | 2014-01-24 | 2016-04-05 | Qualcomm Incorporated | Tunable radio frequency (RF) front-end architecture using filter having adjustable inductance and capacitance |
US10060962B2 (en) | 2014-03-31 | 2018-08-28 | The United States Of America, As Represented By The Secretary Of The Navy | System and method for tuning transformers |
US20150302976A1 (en) * | 2014-04-17 | 2015-10-22 | Qualcomm Incorporated | Effective magnetic shield for on-chip inductive structures |
TWI571895B (zh) | 2014-06-03 | 2017-02-21 | 瑞昱半導體股份有限公司 | 參數可變之裝置、可變電感及具有該可變電感之裝置 |
US9543068B2 (en) * | 2014-06-17 | 2017-01-10 | Qualcomm Technologies International, Ltd. | Inductor structure and application thereof |
CN105591198B (zh) * | 2014-10-21 | 2020-07-10 | 深圳富泰宏精密工业有限公司 | 天线结构及具有该天线结构的电子装置 |
KR20160058592A (ko) * | 2014-11-17 | 2016-05-25 | 에스케이하이닉스 주식회사 | 알에프 집적회로 및 그 제조방법 |
US9705466B2 (en) * | 2015-02-25 | 2017-07-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device with guard ring coupled resonant circuit |
US9543892B1 (en) | 2015-07-16 | 2017-01-10 | Qualcomm Incorporated | Overlapping uncoupled inductors for low-cost multi-frequency voltage-controlled oscillators |
TWI541842B (zh) * | 2015-10-23 | 2016-07-11 | 瑞昱半導體股份有限公司 | 螺旋狀堆疊式積體變壓器及電感 |
US10879341B2 (en) | 2016-01-20 | 2020-12-29 | Qualcomm Incorporated | Integrated device package comprising a real time tunable inductor implemented in a package substrate |
US10304623B2 (en) | 2016-01-20 | 2019-05-28 | Qualcomm Incorporated | Integrated device package comprising a tunable inductor |
CN108616218A (zh) * | 2016-12-13 | 2018-10-02 | 湖南格兰德芯微电子有限公司 | 射频电感变换器 |
CN107425812B (zh) * | 2017-03-09 | 2020-10-16 | 中国科学院微电子研究所 | 一种基于双模电感的毫米波压控振荡器 |
US10490341B2 (en) * | 2017-08-17 | 2019-11-26 | Advanced Semiconductor Engineering, Inc. | Electrical device |
CN108039344B (zh) * | 2017-11-29 | 2018-12-28 | 温州大学 | 一种可重构片上集成变压器及其调节方法 |
US20190189342A1 (en) * | 2017-12-20 | 2019-06-20 | National Chung Shan Institute Of Science And Technology | Variable inductor and integrated circuit using the variable inductor |
US10361154B2 (en) * | 2017-12-20 | 2019-07-23 | National Chung Shan Institute Of Science And Technology | Variable inductor and integrated circuit using the variable inductor |
TWI666662B (zh) | 2018-06-20 | 2019-07-21 | 瑞昱半導體股份有限公司 | 可變電感裝置 |
US10896949B2 (en) * | 2018-08-21 | 2021-01-19 | Qualcomm Incorporated | Inductor/transformer with closed ring |
KR102163060B1 (ko) | 2019-01-16 | 2020-10-08 | 삼성전기주식회사 | 인덕터 및 인덕터를 포함하는 저잡음 증폭기 |
US11211196B2 (en) * | 2019-03-29 | 2021-12-28 | Intel Corporation | Tunable transformer |
KR102253471B1 (ko) * | 2020-01-21 | 2021-05-18 | 삼성전기주식회사 | 코일 부품 |
US20210233708A1 (en) * | 2020-01-24 | 2021-07-29 | Qorvo Us, Inc. | Inductor trimming using sacrificial magnetically coupled loops |
CN115954192B (zh) * | 2022-12-28 | 2024-02-02 | 中国移动通信有限公司研究院 | 电感、滤波器、调谐电路、阻抗匹配电路及电子设备 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08162331A (ja) * | 1994-12-05 | 1996-06-21 | Hitachi Ltd | 可変インダクタ及びそれを用いた半導体集積回路 |
JP2002009544A (ja) * | 2000-06-19 | 2002-01-11 | Nec Corp | 電圧制御発振器 |
JP2002280222A (ja) * | 2001-03-19 | 2002-09-27 | Internatl Business Mach Corp <Ibm> | 集積化可変インダクタ,インダクタ/バラクタ同調回路 |
JP2003229718A (ja) * | 2002-02-01 | 2003-08-15 | Nec Electronics Corp | 電圧制御発振器 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4816784A (en) * | 1988-01-19 | 1989-03-28 | Northern Telecom Limited | Balanced planar transformers |
US5461353A (en) | 1994-08-30 | 1995-10-24 | Motorola, Inc. | Printed circuit board inductor |
US5483207A (en) | 1994-12-30 | 1996-01-09 | At&T Corp. | Adiabatic MOS oscillators |
US5872489A (en) * | 1997-04-28 | 1999-02-16 | Rockwell Science Center, Llc | Integrated tunable inductance network and method |
US5912596A (en) * | 1998-01-26 | 1999-06-15 | International Business Machines Corporation | Apparatus and method for frequency tuning an LC oscillator in a integrated clock circuit |
US5952893A (en) * | 1998-03-06 | 1999-09-14 | International Business Machines Corporation | Integrated circuit inductors for use with electronic oscillators |
US6885275B1 (en) * | 1998-11-12 | 2005-04-26 | Broadcom Corporation | Multi-track integrated spiral inductor |
AU5299600A (en) | 1999-05-26 | 2000-12-12 | Broadcom Corporation | Integrated vco |
US6304232B1 (en) * | 2000-02-24 | 2001-10-16 | The Goodyear Tire & Rubber Company | Circuit module |
US6549077B1 (en) | 2002-02-20 | 2003-04-15 | United Microelectronics Corp. | Integrated inductor for RF transistor |
-
2003
- 2003-09-25 US US10/672,904 patent/US7460001B2/en not_active Expired - Lifetime
-
2004
- 2004-09-10 WO PCT/US2004/029530 patent/WO2005034239A2/en active Application Filing
- 2004-09-10 JP JP2006528040A patent/JP4740136B2/ja not_active Expired - Fee Related
- 2004-09-10 CN CNB2004800323801A patent/CN100464420C/zh not_active Expired - Fee Related
- 2004-09-10 KR KR1020067007415A patent/KR100807132B1/ko not_active IP Right Cessation
- 2004-09-14 TW TW093127775A patent/TWI383409B/zh not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08162331A (ja) * | 1994-12-05 | 1996-06-21 | Hitachi Ltd | 可変インダクタ及びそれを用いた半導体集積回路 |
JP2002009544A (ja) * | 2000-06-19 | 2002-01-11 | Nec Corp | 電圧制御発振器 |
JP2002280222A (ja) * | 2001-03-19 | 2002-09-27 | Internatl Business Mach Corp <Ibm> | 集積化可変インダクタ,インダクタ/バラクタ同調回路 |
JP2003229718A (ja) * | 2002-02-01 | 2003-08-15 | Nec Electronics Corp | 電圧制御発振器 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007123785A (ja) * | 2005-10-31 | 2007-05-17 | Taiyo Yuden Co Ltd | 可変インダクタ及びそれを利用したアンテナ装置 |
JP2008016703A (ja) * | 2006-07-07 | 2008-01-24 | Sony Corp | 可変インダクタ及びこれを用いた半導体装置 |
JP2012235155A (ja) * | 2007-01-24 | 2012-11-29 | Renesas Electronics Corp | インダクタ |
JP2011514661A (ja) * | 2008-01-29 | 2011-05-06 | インターナショナル・ビジネス・マシーンズ・コーポレーション | オンチップ集積電圧制御可変インダクタ、そのような可変インダクタの製作および調整方法、ならびにそのような可変インダクタを集積化する設計構造 |
JP2015111694A (ja) * | 2009-08-31 | 2015-06-18 | クゥアルコム・インコーポレイテッドQualcomm Incorporated | 切り替え可能インダクタネットワーク |
JP2012060157A (ja) * | 2011-12-05 | 2012-03-22 | Sony Corp | 可変インダクタ及びこれを用いた半導体装置 |
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US7460001B2 (en) | 2008-12-02 |
TW200515433A (en) | 2005-05-01 |
WO2005034239A3 (en) | 2005-07-14 |
WO2005034239A2 (en) | 2005-04-14 |
CN1875484A (zh) | 2006-12-06 |
JP4740136B2 (ja) | 2011-08-03 |
TWI383409B (zh) | 2013-01-21 |
US20050068146A1 (en) | 2005-03-31 |
KR100807132B1 (ko) | 2008-03-03 |
CN100464420C (zh) | 2009-02-25 |
KR20060058735A (ko) | 2006-05-30 |
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