JP2007505492A5 - - Google Patents

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Publication number
JP2007505492A5
JP2007505492A5 JP2006526058A JP2006526058A JP2007505492A5 JP 2007505492 A5 JP2007505492 A5 JP 2007505492A5 JP 2006526058 A JP2006526058 A JP 2006526058A JP 2006526058 A JP2006526058 A JP 2006526058A JP 2007505492 A5 JP2007505492 A5 JP 2007505492A5
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JP
Japan
Prior art keywords
antireflective material
dimension
substrate
micro
antireflective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006526058A
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English (en)
Japanese (ja)
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JP2007505492A (ja
JP4755592B2 (ja
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Publication date
Priority claimed from US10/661,041 external-priority patent/US7030008B2/en
Application filed filed Critical
Publication of JP2007505492A publication Critical patent/JP2007505492A/ja
Publication of JP2007505492A5 publication Critical patent/JP2007505492A5/ja
Application granted granted Critical
Publication of JP4755592B2 publication Critical patent/JP4755592B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2006526058A 2003-09-12 2004-05-13 造形部分をパターン形成する方法 Expired - Fee Related JP4755592B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/661,041 2003-09-12
US10/661,041 US7030008B2 (en) 2003-09-12 2003-09-12 Techniques for patterning features in semiconductor devices
PCT/US2004/014903 WO2005036625A1 (en) 2003-09-12 2004-05-13 Techniques for patterning features in semiconductor devices

Publications (3)

Publication Number Publication Date
JP2007505492A JP2007505492A (ja) 2007-03-08
JP2007505492A5 true JP2007505492A5 (enExample) 2007-06-28
JP4755592B2 JP4755592B2 (ja) 2011-08-24

Family

ID=34273788

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006526058A Expired - Fee Related JP4755592B2 (ja) 2003-09-12 2004-05-13 造形部分をパターン形成する方法

Country Status (7)

Country Link
US (3) US7030008B2 (enExample)
EP (1) EP1665347A1 (enExample)
JP (1) JP4755592B2 (enExample)
KR (1) KR100810203B1 (enExample)
CN (1) CN1849698B (enExample)
TW (1) TWI345803B (enExample)
WO (1) WO2005036625A1 (enExample)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6462371B1 (en) * 1998-11-24 2002-10-08 Micron Technology Inc. Films doped with carbon for use in integrated circuit technology
US20040013971A1 (en) * 2001-11-21 2004-01-22 Berger Larry L Antireflective layer for use in microlithography
KR100615583B1 (ko) * 2004-08-11 2006-08-25 삼성전자주식회사 노드 절연막 패턴에 구속된 상전이막 패턴을 갖는 피이.램의 형성방법들
DE102004052611A1 (de) 2004-10-29 2006-05-04 Infineon Technologies Ag Verfahren zur Herstellung einer mit einem Füllmaterial mindestens teilweise gefüllten Öffnung, Verfahren zur Herstellung einer Speicherzelle und Speicherzelle
US7361588B2 (en) * 2005-04-04 2008-04-22 Advanced Micro Devices, Inc. Etch process for CD reduction of arc material
US8852851B2 (en) 2006-07-10 2014-10-07 Micron Technology, Inc. Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same
US7863150B2 (en) * 2006-09-11 2011-01-04 International Business Machines Corporation Method to generate airgaps with a template first scheme and a self aligned blockout mask
US8026180B2 (en) * 2007-07-12 2011-09-27 Micron Technology, Inc. Methods of modifying oxide spacers
US7888267B2 (en) 2008-02-01 2011-02-15 Tokyo Electron Limited Method for etching silicon-containing ARC layer with reduced CD bias
US7989307B2 (en) * 2008-05-05 2011-08-02 Micron Technology, Inc. Methods of forming isolated active areas, trenches, and conductive lines in semiconductor structures and semiconductor structures including the same
US10151981B2 (en) 2008-05-22 2018-12-11 Micron Technology, Inc. Methods of forming structures supported by semiconductor substrates
US8409457B2 (en) * 2008-08-29 2013-04-02 Micron Technology, Inc. Methods of forming a photoresist-comprising pattern on a substrate
US8039399B2 (en) * 2008-10-09 2011-10-18 Micron Technology, Inc. Methods of forming patterns utilizing lithography and spacers
US8796155B2 (en) 2008-12-04 2014-08-05 Micron Technology, Inc. Methods of fabricating substrates
US8247302B2 (en) 2008-12-04 2012-08-21 Micron Technology, Inc. Methods of fabricating substrates
US8273634B2 (en) * 2008-12-04 2012-09-25 Micron Technology, Inc. Methods of fabricating substrates
KR101615787B1 (ko) 2008-12-30 2016-04-26 쓰리엠 이노베이티브 프로퍼티즈 컴파니 나노구조화 표면의 제조 방법
CN102325719A (zh) * 2008-12-30 2012-01-18 3M创新有限公司 纳米结构化制品和制备纳米结构化制品的方法
KR101915868B1 (ko) 2008-12-30 2018-11-06 쓰리엠 이노베이티브 프로퍼티즈 컴파니 반사방지 용품 및 이의 제조 방법
US8268543B2 (en) * 2009-03-23 2012-09-18 Micron Technology, Inc. Methods of forming patterns on substrates
US9330934B2 (en) 2009-05-18 2016-05-03 Micron Technology, Inc. Methods of forming patterns on substrates
US20110129991A1 (en) * 2009-12-02 2011-06-02 Kyle Armstrong Methods Of Patterning Materials, And Methods Of Forming Memory Cells
US8323871B2 (en) * 2010-02-24 2012-12-04 International Business Machines Corporation Antireflective hardmask composition and a method of preparing a patterned material using same
CN102222640B (zh) * 2010-04-16 2013-08-14 中芯国际集成电路制造(上海)有限公司 通孔形成方法
US20110253670A1 (en) * 2010-04-19 2011-10-20 Applied Materials, Inc. Methods for etching silicon-based antireflective layers
US8232198B2 (en) 2010-08-05 2012-07-31 International Business Machines Corporation Self-aligned permanent on-chip interconnect structure formed by pitch splitting
US8518788B2 (en) 2010-08-11 2013-08-27 Micron Technology, Inc. Methods of forming a plurality of capacitors
US8455341B2 (en) 2010-09-02 2013-06-04 Micron Technology, Inc. Methods of forming features of integrated circuitry
US9054160B2 (en) 2011-04-15 2015-06-09 International Business Machines Corporation Interconnect structure and method for fabricating on-chip interconnect structures by image reversal
US8900988B2 (en) 2011-04-15 2014-12-02 International Business Machines Corporation Method for forming self-aligned airgap interconnect structures
US8890318B2 (en) 2011-04-15 2014-11-18 International Business Machines Corporation Middle of line structures
US8575032B2 (en) 2011-05-05 2013-11-05 Micron Technology, Inc. Methods of forming a pattern on a substrate
US8822137B2 (en) 2011-08-03 2014-09-02 International Business Machines Corporation Self-aligned fine pitch permanent on-chip interconnect structures and method of fabrication
US20130062732A1 (en) 2011-09-08 2013-03-14 International Business Machines Corporation Interconnect structures with functional components and methods for fabrication
US9076680B2 (en) 2011-10-18 2015-07-07 Micron Technology, Inc. Integrated circuitry, methods of forming capacitors, and methods of forming integrated circuitry comprising an array of capacitors and circuitry peripheral to the array
US9177794B2 (en) 2012-01-13 2015-11-03 Micron Technology, Inc. Methods of patterning substrates
US9087753B2 (en) 2012-05-10 2015-07-21 International Business Machines Corporation Printed transistor and fabrication method
US8629048B1 (en) 2012-07-06 2014-01-14 Micron Technology, Inc. Methods of forming a pattern on a substrate
US9159581B2 (en) * 2012-11-27 2015-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making a semiconductor device using a bottom antireflective coating (BARC) layer
US9153455B2 (en) * 2013-06-19 2015-10-06 Micron Technology, Inc. Methods of forming semiconductor device structures, memory cells, and arrays
US9917027B2 (en) * 2015-12-30 2018-03-13 Globalfoundries Singapore Pte. Ltd. Integrated circuits with aluminum via structures and methods for fabricating the same
US10157773B1 (en) * 2017-11-28 2018-12-18 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure having layer with re-entrant profile and method of forming the same
US10867842B2 (en) * 2018-10-31 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Method for shrinking openings in forming integrated circuits
US11398377B2 (en) * 2020-01-14 2022-07-26 International Business Machines Corporation Bilayer hardmask for direct print lithography

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4814406A (en) 1986-02-28 1989-03-21 Katayama Chemical Works Ltd. Scale inhibitor
EP0263220B1 (en) * 1986-10-08 1992-09-09 International Business Machines Corporation Method of forming a via-having a desired slope in a photoresist masked composite insulating layer
JP3002033B2 (ja) * 1991-09-27 2000-01-24 株式会社東芝 ドライエッチング方法
JPH0941161A (ja) * 1995-07-26 1997-02-10 Dainippon Printing Co Ltd エッチングを用いた加工方法
KR100256137B1 (ko) 1996-03-26 2000-05-15 아사무라 타카싯 반도체장치및그제조방법
US5753418A (en) * 1996-09-03 1998-05-19 Taiwan Semiconductor Manufacturing Company Ltd 0.3 Micron aperture width patterning process
US5854503A (en) * 1996-11-19 1998-12-29 Integrated Device Technology, Inc. Maximization of low dielectric constant material between interconnect traces of a semiconductor circuit
KR100280622B1 (ko) * 1998-04-02 2001-03-02 윤종용 반도체 장치의 콘택 형성 방법
US6009888A (en) * 1998-05-07 2000-01-04 Chartered Semiconductor Manufacturing Company, Ltd. Photoresist and polymer removal by UV laser aqueous oxidant
US6316167B1 (en) * 2000-01-10 2001-11-13 International Business Machines Corporation Tunabale vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and application thereof
DE19844102C2 (de) * 1998-09-25 2000-07-20 Siemens Ag Herstellverfahren für eine Halbleiterstruktur
JP2000164701A (ja) * 1998-11-25 2000-06-16 Mitsubishi Electric Corp 半導体装置の製造方法
US6159863A (en) * 1999-01-22 2000-12-12 Advanced Micro Devices, Inc. Insitu hardmask and metal etch in a single etcher
US6514867B1 (en) * 2001-03-26 2003-02-04 Advanced Micro Devices, Inc. Method of creating narrow trench lines using hard mask
US6828259B2 (en) * 2001-03-28 2004-12-07 Advanced Micro Devices, Inc. Enhanced transistor gate using E-beam radiation
US6387798B1 (en) * 2001-06-25 2002-05-14 Institute Of Microelectronics Method of etching trenches for metallization of integrated circuit devices with a narrower width than the design mask profile
KR100415088B1 (ko) * 2001-10-15 2004-01-13 주식회사 하이닉스반도체 반도체장치의 제조방법
JP2003209037A (ja) * 2002-01-11 2003-07-25 Sony Corp アライメントマーク及び半導体装置の製造方法
TW550695B (en) 2002-02-26 2003-09-01 Taiwan Semiconductor Mfg Method to remove bottom anti-reflection coating layer
US6743712B2 (en) * 2002-07-12 2004-06-01 Intel Corporation Method of making a semiconductor device by forming a masking layer with a tapered etch profile
US6853043B2 (en) * 2002-11-04 2005-02-08 Applied Materials, Inc. Nitrogen-free antireflective coating for use with photolithographic patterning
US6774032B1 (en) * 2003-05-30 2004-08-10 Intel Corporation Method of making a semiconductor device by forming a masking layer with a tapered etch profile
US6765254B1 (en) * 2003-06-12 2004-07-20 Advanced Micro Devices, Inc. Structure and method for preventing UV radiation damage and increasing data retention in memory cells

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