KR100810203B1 - 반도체 디바이스에서 피처를 패터닝하기 위한 기술 - Google Patents

반도체 디바이스에서 피처를 패터닝하기 위한 기술 Download PDF

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KR100810203B1
KR100810203B1 KR1020067003310A KR20067003310A KR100810203B1 KR 100810203 B1 KR100810203 B1 KR 100810203B1 KR 1020067003310 A KR1020067003310 A KR 1020067003310A KR 20067003310 A KR20067003310 A KR 20067003310A KR 100810203 B1 KR100810203 B1 KR 100810203B1
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antireflective material
substrate
feature
features
antireflective
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Korean (ko)
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KR20060064650A (ko
Inventor
스콧 디. 알렌
캐서리나 이. 바비치
스티븐 제이. 홈즈
아르판 피. 마호로월러
더크 파이퍼
리차드 스테판 와이즈
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인터내셔널 비지네스 머신즈 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0338—Process specially adapted to improve the resolution of the mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24926—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020067003310A 2003-09-12 2004-05-13 반도체 디바이스에서 피처를 패터닝하기 위한 기술 Expired - Fee Related KR100810203B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/661,041 2003-09-12
US10/661,041 US7030008B2 (en) 2003-09-12 2003-09-12 Techniques for patterning features in semiconductor devices

Publications (2)

Publication Number Publication Date
KR20060064650A KR20060064650A (ko) 2006-06-13
KR100810203B1 true KR100810203B1 (ko) 2008-03-07

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KR1020067003310A Expired - Fee Related KR100810203B1 (ko) 2003-09-12 2004-05-13 반도체 디바이스에서 피처를 패터닝하기 위한 기술

Country Status (7)

Country Link
US (3) US7030008B2 (enExample)
EP (1) EP1665347A1 (enExample)
JP (1) JP4755592B2 (enExample)
KR (1) KR100810203B1 (enExample)
CN (1) CN1849698B (enExample)
TW (1) TWI345803B (enExample)
WO (1) WO2005036625A1 (enExample)

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US9435916B2 (en) 2008-12-30 2016-09-06 3M Innovative Properties Company Antireflective articles and methods of making the same

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US7863150B2 (en) * 2006-09-11 2011-01-04 International Business Machines Corporation Method to generate airgaps with a template first scheme and a self aligned blockout mask
US8026180B2 (en) * 2007-07-12 2011-09-27 Micron Technology, Inc. Methods of modifying oxide spacers
US7888267B2 (en) 2008-02-01 2011-02-15 Tokyo Electron Limited Method for etching silicon-containing ARC layer with reduced CD bias
US7989307B2 (en) * 2008-05-05 2011-08-02 Micron Technology, Inc. Methods of forming isolated active areas, trenches, and conductive lines in semiconductor structures and semiconductor structures including the same
US10151981B2 (en) 2008-05-22 2018-12-11 Micron Technology, Inc. Methods of forming structures supported by semiconductor substrates
US8409457B2 (en) * 2008-08-29 2013-04-02 Micron Technology, Inc. Methods of forming a photoresist-comprising pattern on a substrate
US8039399B2 (en) * 2008-10-09 2011-10-18 Micron Technology, Inc. Methods of forming patterns utilizing lithography and spacers
US8796155B2 (en) 2008-12-04 2014-08-05 Micron Technology, Inc. Methods of fabricating substrates
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US8273634B2 (en) * 2008-12-04 2012-09-25 Micron Technology, Inc. Methods of fabricating substrates
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US8268543B2 (en) * 2009-03-23 2012-09-18 Micron Technology, Inc. Methods of forming patterns on substrates
US9330934B2 (en) 2009-05-18 2016-05-03 Micron Technology, Inc. Methods of forming patterns on substrates
US20110129991A1 (en) * 2009-12-02 2011-06-02 Kyle Armstrong Methods Of Patterning Materials, And Methods Of Forming Memory Cells
US8323871B2 (en) * 2010-02-24 2012-12-04 International Business Machines Corporation Antireflective hardmask composition and a method of preparing a patterned material using same
CN102222640B (zh) * 2010-04-16 2013-08-14 中芯国际集成电路制造(上海)有限公司 通孔形成方法
US20110253670A1 (en) * 2010-04-19 2011-10-20 Applied Materials, Inc. Methods for etching silicon-based antireflective layers
US8232198B2 (en) 2010-08-05 2012-07-31 International Business Machines Corporation Self-aligned permanent on-chip interconnect structure formed by pitch splitting
US8518788B2 (en) 2010-08-11 2013-08-27 Micron Technology, Inc. Methods of forming a plurality of capacitors
US8455341B2 (en) 2010-09-02 2013-06-04 Micron Technology, Inc. Methods of forming features of integrated circuitry
US9054160B2 (en) 2011-04-15 2015-06-09 International Business Machines Corporation Interconnect structure and method for fabricating on-chip interconnect structures by image reversal
US8900988B2 (en) 2011-04-15 2014-12-02 International Business Machines Corporation Method for forming self-aligned airgap interconnect structures
US8890318B2 (en) 2011-04-15 2014-11-18 International Business Machines Corporation Middle of line structures
US8575032B2 (en) 2011-05-05 2013-11-05 Micron Technology, Inc. Methods of forming a pattern on a substrate
US8822137B2 (en) 2011-08-03 2014-09-02 International Business Machines Corporation Self-aligned fine pitch permanent on-chip interconnect structures and method of fabrication
US20130062732A1 (en) 2011-09-08 2013-03-14 International Business Machines Corporation Interconnect structures with functional components and methods for fabrication
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US9159581B2 (en) * 2012-11-27 2015-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making a semiconductor device using a bottom antireflective coating (BARC) layer
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US9917027B2 (en) * 2015-12-30 2018-03-13 Globalfoundries Singapore Pte. Ltd. Integrated circuits with aluminum via structures and methods for fabricating the same
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Publication number Priority date Publication date Assignee Title
WO2010123528A3 (en) * 2008-12-30 2011-01-06 3M Innovative Properties Company Nanostructured articles and methods of making nanostructured articles
US9435916B2 (en) 2008-12-30 2016-09-06 3M Innovative Properties Company Antireflective articles and methods of making the same
US9908772B2 (en) 2008-12-30 2018-03-06 3M Innovative Properties Company Nanostructured articles and methods of making nanostructured articles
US9939557B2 (en) 2008-12-30 2018-04-10 3M Innovative Properties Company Antireflective articles and methods of making the same

Also Published As

Publication number Publication date
CN1849698A (zh) 2006-10-18
EP1665347A1 (en) 2006-06-07
JP2007505492A (ja) 2007-03-08
KR20060064650A (ko) 2006-06-13
JP4755592B2 (ja) 2011-08-24
WO2005036625A1 (en) 2005-04-21
US7030008B2 (en) 2006-04-18
CN1849698B (zh) 2012-07-11
TWI345803B (en) 2011-07-21
TW200523998A (en) 2005-07-16
US20080187731A1 (en) 2008-08-07
US20050056823A1 (en) 2005-03-17
US20060118785A1 (en) 2006-06-08
US7545041B2 (en) 2009-06-09

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