550695 A7 __ B7 ____ 五、發明説明（） 發明領域： (請先閱讀背面之注意事項再填寫本頁) 一種移除底部抗反射（Bottom Anti-Reflection Coating ; BARC)層之方法，特別是有關於利用光阻層保護 導體層，並利用濕式或乾式蝕刻法去除底部抗反射層，但 其應用不限於本領域。 發明背景： 鑲嵌（Damascene) —詞衍生自古代的大馬士革 (Damascus)工匠之嵌刻技術，亦稱為大馬士革技術。傳統的 積體電路之多層金屬連線（Multilevel Interconnection)係以 金屬層的乾蝕刻（Dry Etch)方式來製作金屬導線，然後進行 介電層的填充。而鑲嵌技術則是先在介電層上蝕刻金屬導線 用的圖膜，然後再填充金屬。至於雙重金屬鑲嵌技術主要的 特點在於不需進行金屬層的触刻，而是將孔洞（Η 01 e)及金屬 導線結合一起以鎮嵌·的方式來做’如此只需一道金屬填充的 步驟，可簡化製程。 經濟部智慧財產局員工消費合作社印製 在雙重金屬鑲嵌結構之微影製程中，造成關鍵尺寸 (Critical Dimension ; CD)變異的主要原因是由於反射所造成 的問題’未來在以氟化氬（193nm)為曝光光源時將會比〇線 (43 6nm)與I線（3 65nm)時更為嚴重。主要是因為高反射性的 2550695 A7 __ B7 ____ 5. Description of the invention () Field of invention: (Please read the precautions on the back before filling out this page) A method of removing the bottom anti-reflective coating (barc), especially about The photoresist layer is used to protect the conductor layer, and the bottom anti-reflection layer is removed by wet or dry etching, but its application is not limited to this field. Background of the Invention: Damascene-The word is derived from the inlay technique of ancient Damascus artisans, also known as Damascus technology. Multilevel interconnections of conventional integrated circuits are made by dry etching of the metal layer (Dry Etch), and then the dielectric layer is filled. In the damascene technique, a pattern film for metal wires is etched on the dielectric layer, and then the metal is filled. As for the main feature of the dual metal damascene technology, the metal layer is not required to be etched, but the hole (Η 01 e) and the metal wire are combined to do it in a nested way. 'So only one metal filling step is needed. Can simplify the process. The Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs printed in the lithography process of the double metal mosaic structure. The main cause of the critical dimension (CD) variation is the problem caused by reflection. 'In the future, argon fluoride (193nm ) Is more severe for exposure light source than for 0 line (43 6nm) and I line (3 65nm). Mainly due to the highly reflective 2
550695 A7 B7 五、發明説明（） (請先閲讀背面之注意事項再填寫本頁) 基材所造成的擺動效應（Swing Effect)與總體效應（Bulk Effect)，此兩者皆會造成光阻層所接收的曝光能量改變。擺 動效應是由於反射率隨光阻層厚度造成光學干涉之週期性 變化，而總體效應則在光阻層厚度差距極大時擺動效應整體 性之趨勢變化，也就是說光阻層厚度越大，要分解光阻層的 能量就越大。因此，針對所使用之光譜範圍尋找適合的抗反 射層是很重要的。這裡主要有兩種降低反射的方法：一種是 使用頂部抗反射層（Top Anti-Reflection Coating ; TARC)， 另一種為使用底部抗反射層。這些抗反射層的最主要功能在 於降低空氣，光阻層介面（TARC)與光阻層-基材介面（BARC) 之反射率，使之較小化。由於底部抗反射層可同時降低擺動 效應和總體效應，但是頂部抗反射層卻只減小擺動效應。因 此限制了頂部抗反射層的發展與應用。 線 經濟部智慧財產局員工消費合作社印製 底部抗反射層可分為兩大類：第一類為有機類底部抗反 射層’此類底部抗反射層已廣泛的應用於積體電路製程。有 機類底部抗反射層一般比覆蓋其上之光阻層較具有吸收 性，且其塗佈方式採用旋轉塗佈方式。一般而言，要找到一 種適合各種高反射基材的底部抗反射層是很難的，且其階梯 覆蓋與厚度的控制也是較差的。第二類底部抗反射層是以化 學氣相沉積（Chemical Vapor Deposition; CVD)方式成長的 無機類底部抗反射層。它具有成分可調與厚度可調的優點， 所以可以完全消除在不同高反射基材上的反射。此類製程可 3 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公釐) 550695 A7550695 A7 B7 5. Description of the invention () (Please read the precautions on the back before filling out this page) Swing effect and bulk effect caused by the substrate, both of which will cause a photoresist layer The received exposure energy changes. The wobble effect is due to the periodic change of the optical interference caused by the reflectivity with the thickness of the photoresist layer, while the overall effect changes the overall trend of the wobble effect when the thickness of the photoresist layer is greatly different. The greater the energy required to decompose the photoresist layer. Therefore, it is important to find a suitable anti-reflective layer for the spectral range used. There are two main ways to reduce reflection: one is to use a Top Anti-Reflection Coating (TARC), and the other is to use a bottom Anti-Reflection Coating. The main function of these anti-reflection layers is to reduce the reflectivity of the air, the photoresist layer interface (TARC) and the photoresist layer-substrate interface (BARC), making them smaller. Since the bottom anti-reflection layer can reduce both the wobble effect and the overall effect, the top anti-reflection layer only reduces the wobble effect. Therefore, the development and application of the top anti-reflection layer are limited. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs The bottom anti-reflection layer can be divided into two categories: the first type is the organic bottom anti-reflection layer. This type of bottom anti-reflection layer has been widely used in integrated circuit manufacturing processes. Organic bottom anti-reflection layer is generally more absorptive than the photoresist layer covering it, and the coating method is spin coating. In general, it is difficult to find a bottom anti-reflection layer suitable for various highly reflective substrates, and its step coverage and thickness control are also poor. The second type of bottom anti-reflection layer is an inorganic type bottom anti-reflection layer grown by chemical vapor deposition (Chemical Vapor Deposition; CVD). It has the advantages of adjustable composition and adjustable thickness, so it can completely eliminate reflections on different highly reflective substrates. This type of process can be used in 3 paper sizes that comply with China National Standard (CNS) A4 (210X 297 mm) 550695 A7
五、發明説明（） 經濟部智慧財產局員工消費合作社印製 糟由改k氣體流率控制底部抗反射層的光學常數，使之較適 化且厚度可藉由化學氣相沉積法得到精確的控制。但其複 雜程度與花費比有機類底部抗反射層稍高。在底部抗反射層 之上的光阻層應儘可能的保持完整無缺，以避免關鍵尺寸發 生變化。底部抗反射層在光阻層顯影完之後必須以物理性撞 擊（Physical Bombardment)來去除底部抗反射層。 第1 A圖至第1 d圖以形成雙重金屬鑲嵌結構為例，為 4知技術在基材上移除底部抗反射層之製程剖面圖。請參 考第1A圖，首先提供基材ι〇〇,此基材1〇〇中至少已具有 第一介電層104，且此第一介電層1〇4中具有第一導體層 102，其中第一導體層102為金屬層。在基材1〇〇上例如以 化學氣相沉積法，依序沉積第一保護層1 〇6、第二介電層 108、第二保護層U0、第三介電層112、以及底部抗反射 層114。形成一層已定義之第一光阻層116位在底部抗反 射層1 1 4上’如第1 A圖所示之結構。接著利用第一光阻層 1 1 6為罩幕，依序蝕刻部分之底部抗反射層丨丨4、部分之第 三介電層Π 2、部分之第二保護層1丨〇、以及部分之第二介 電層1 0 8，並以第一保護層1 〇 6為蝕刻終止層，用以定義 出介層窗開口 1 1 8，如第1 B圖所示之結構。接著請參考第 1C圖，形成一層已定義之第二光阻層12〇位在底部抗反射 層1 1 4上，一方面利用第二光阻層1 2〇為罩幕，例如以乾 式蝕刻法依序蝕刻另一部分之底部抗反射層11 4與另一部 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公釐) (請先閲讀背面之注意事項再塡寫本頁) 訂· 線 550695 A7 B7 五、發明説明（） 分之第三介電層丨丨2，且約略暴露出下方之第二介電層 108，用以定義出溝渠（Trench) 122 ;而同時在介層窗開口 1 18中填入部分之第二光阻層120，並利用第二光阻層丨2〇 為罩幕，例如乾式蝕刻法，依序蝕刻暴露出之底部抗反射 層114與下方之第三介電層112，並約暴露出第一保護層 1 06，用以形成雙重金屬鑲嵌開口 1 1 9。然後去除第二光阻 層1 20，並以乾式蝕刻法移除雙重金屬鑲嵌開口丨丨9中部 分之第一保護層1 06，以暴露出部分之第一導體層1〇2，而 形成如第1 D圖所示之結構。之後以物理性撞擊來去除底部 抗反射層，以及清除雙重金屬鑲嵌開口 1 1 9與溝渠丨22中 之微粒。 如上述習知之方法所述，底部抗反射層1 1 4係用來在微 影製程中降低光阻層-基材介面之反射率，而在定義出雙重 金屬鑲嵌開口丨1 9與溝渠1 2 2之後，由於進行物理性撞擊所 使用的離子撞擊到底部抗反射層1 1 4，會產生更多的微粒沉 積於反應室中，會影響到後續其他導體層填充的效果。倘若 先以濕式或乾式蝕刻法去除底部抗反射層1 1 4，則雙重金屬 鑲嵌開口 119之底部的第一導體層102在蝕刻過程中也容易 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 陷缺成造 而 害 傷 到 受 述概及 的 目 明發 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) 550695 Α7V. Description of the invention () Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the optical constant of the anti-reflection layer at the bottom is controlled by changing the gas flow rate of k to make it more suitable and the thickness can be accurately obtained by chemical vapor deposition. control. However, its complexity and cost are slightly higher than those of the organic bottom anti-reflection layer. The photoresist layer on the bottom anti-reflection layer should be as intact as possible to avoid key dimension changes. After the bottom anti-reflection layer is developed, the bottom anti-reflection layer must be removed by physical impact (Physical Bombardment). Figures 1A to 1d are cross-sectional views of the process of removing the bottom anti-reflection layer on the substrate by using a double-metal damascene structure as an example. Please refer to FIG. 1A. First, a substrate ιOO is provided. The substrate 100 has at least a first dielectric layer 104, and the first dielectric layer 104 has a first conductor layer 102. The first conductor layer 102 is a metal layer. A first protective layer 106, a second dielectric layer 108, a second protective layer U0, a third dielectric layer 112, and a bottom anti-reflection layer are sequentially deposited on the substrate 100 by, for example, a chemical vapor deposition method. Layer 114. A defined first photoresist layer 116 is formed on the bottom anti-reflection layer 1 1 4 'as shown in FIG. 1A. Then, the first photoresist layer 1 16 is used as a mask to sequentially etch a part of the bottom anti-reflection layer 丨 4, a part of the third dielectric layer Π 2, a part of the second protective layer 1 丨 0, and a part of the The second dielectric layer 108 and the first protective layer 106 as an etch stop layer are used to define the opening 1 118 of the dielectric window, as shown in the structure shown in FIG. 1B. Next, please refer to FIG. 1C to form a defined second photoresist layer 120 on the bottom anti-reflection layer 1 14. On the one hand, the second photoresist layer 120 is used as a mask, for example, by dry etching. Etching another part of the bottom anti-reflection layer 11 4 in order and another part of this paper size applies Chinese National Standard (CNS) A4 specification (210X 297 mm) (Please read the precautions on the back before writing this page) Order · Line 550695 A7 B7 V. The third dielectric layer of the invention (2), and the second dielectric layer 108 below is approximately exposed to define a trench (Trench) 122; and at the same time in the dielectric window A portion of the second photoresist layer 120 is filled in the opening 118, and the second photoresist layer 20 is used as a mask. For example, a dry etching method is used to sequentially etch the exposed bottom anti-reflection layer 114 and the third third layer below. The dielectric layer 112 exposes about a first protective layer 106 to form a double metal damascene opening 1 1 9. Then, the second photoresist layer 120 is removed, and a portion of the first protective layer 106 in the double metal damascene opening 9 is removed by dry etching to expose a portion of the first conductor layer 102, and is formed as The structure shown in Figure 1D. Physical impact is then used to remove the bottom anti-reflection layer, and to remove particles in the double metal inlaid openings 1 19 and the trenches 22. As described in the above-mentioned conventional method, the bottom anti-reflection layer 1 1 4 is used to reduce the reflectivity of the photoresist layer-substrate interface in the lithography process, and defines a double metal inlaid opening 1 9 and a trench 1 2 After 2, since the ions used for the physical impact hit the bottom anti-reflection layer 1 1 4, more particles will be deposited in the reaction chamber, which will affect the subsequent filling effect of other conductor layers. If the bottom anti-reflection layer 1 1 4 is removed by wet or dry etching first, the first conductive layer 102 at the bottom of the double metal inlaid opening 119 is also easy during the etching process (please read the precautions on the back before filling this page) ) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, causing damage to the above-mentioned items. This paper standard applies to China National Standard (CNS) A4 (210X297 mm) 550695 Α7
五、發明説明（） σ蓉於上述之發明背景中，習知移除底部抗反射層之製 中’不僅產生微粒沉積於反應室中，影響到後續第二導 體層填充的效果，同時若先以濕式或乾式蝕刻法去除底部 抗反射層，則雙重金屬鑲嵌開口之底部的第一導體層在姓 刻過程中也容易受到傷害而造成缺陷。 本月的主要目的之一為提供一種移除底部抗 反射層之方法，其係塗佈光阻層以覆蓋在基材表面之底部 抗反射層上並填滿開σ中，利用光阻本身的擺動效應和總 體效應：調整適當的曝光能量與光阻層的厚度，經曝光顯 影後只殘留位於開口之底部並覆蓋於導體層上的光阻層， 藉以在後、’另飯刻法去除底部抗反射層並以物理性撞擊來清 除開口中之微粒時，光阻層用來保護開口中的導體層並避 免反應室内部微粒的沉積。 X月之另一目的為提供一種移除底部抗反射層之方 法，其係在不使用光罩之情形下，塗佈光阻層以覆蓋在基 材表面之底部抗反射層上並填滿開口中，不僅大多數的光 阻均可適用，更可節省成本。 (請先閱讀背面之注意事項再填寫本頁) 線 經濟部智慧財產局員工消費合作社印製 本發明之又一目的為提供一種移除底部抗反射層之方 法’其係利用濕式或乾式蝕刻法先去除底部抗反射層，在 後續利用物理性撞擊來清除開口中之微粒時，可避免產生 本紙張尺度適用中國國家標準(CNS)A4規格(210Χ 297公釐) 550695 A7 B7 五、發明説明（） 微粒沉積於反應室中。 經濟部智慧財產局員工消費合作社印製 根據以上所述之目的，本發明更提供了 抗反射層之方法，至少包含：提供基材，此 具第一介電層，且此第一介電層中具有第一 材上例如依序沉積第一保護層、第二介電層、 第二介電層、以及底部抗反射層；形成一層 光阻層位在底部抗反射層上’利用第一光阻 序蝕刻部分之底部抗反射層、部分之第三介 第二保護層、以及部分之第二介電層，並以 蝕刻終止層，用以定義出介層窗開口；接著 義之第二光阻層位在底部抗反射層上，一方 阻層為罩幕，依序蝕刻另一部分之底部抗反 分之第二介電層，且約略暴露出下方之第二 定義出溝渠’而同時在介層窗開口中填入部 層，並利用第二光阻層為罩幕，例如以乾式 刻暴路出之底部抗反射層與下方之第三介電 出第一保護層，用以形成雙重金屬鑲嵌開口 二光阻層，並以乾式蝕刻法移除雙重金屬鑲 之第一保護層，以暴露出部分之第一導體層 阻層以覆蓋基材表面之底部抗反射層上並填 嵌開口與溝渠中’利用光阻本身的擺動效應 調整適當的曝光能量與光阻層的厚度，經曝 一種移 電層、 第一保 形成一 (請先閲讀背面之注意事項再填寫本頁} 訂. 線· 本紙張尺度適用中國國家標準(CNS)A4規格(2^297公楚） 550695 A7 B7 五'發明説明（） 留位於雙重金屬鑲嵌開口之底部並覆蓋第_導體層的光阻 層；以及利用例如濕式或乾式蝕刻法’去除底部抗反射層， 並例如以氬氣（Argon，Ar)離子進行物理性撞擊來清除雙重 金屬鑲嵌開口中之微粒。 圖式簡單說明： 本發明的較佳貫施例將於往後之說明文字中輔以下列 圖形做更詳細的闡述，其中： 第1 A圖至第1 D圖所緣示為習知技術進行雙重金屬鑲 般結構時移除底部抗反射層之製造剖面圖； 第2A圖至第2G圖所繪示為本發明之一較佳實施例進 行雙重金屬鑲嵌結構時移除底部抗反射層之製程剖面圖； 以及 第3圖所繪示為本發明之一較佳實施例之光阻的擺動 效應和總體效應之關係圖。 (請先閲讀背面之注意事項再填寫本頁)V. Description of the invention () σ Rong In the above background of the invention, it is known that in the system of removing the bottom anti-reflection layer, not only particles are deposited in the reaction chamber, which affects the subsequent filling effect of the second conductor layer. If the bottom anti-reflection layer is removed by a wet or dry etching method, the first conductor layer at the bottom of the double metal inlaid opening is also easily damaged during the engraving process and causes defects. One of the main objectives of this month is to provide a method for removing the bottom anti-reflection layer, which is to apply a photoresist layer to cover the bottom anti-reflection layer on the surface of the substrate and fill the opening σ. Swing effect and overall effect: Adjust the appropriate exposure energy and the thickness of the photoresist layer. After exposure and development, only the photoresist layer located at the bottom of the opening and covering the conductor layer will be removed, so that the bottom can be removed later. When the anti-reflection layer is used to physically remove particles in the opening by a physical impact, the photoresist layer is used to protect the conductor layer in the opening and avoid the deposition of particles inside the reaction chamber. Another purpose of XM is to provide a method for removing the bottom anti-reflection layer, which is to cover the bottom anti-reflection layer on the surface of the substrate and fill the opening without using a photomask. Not only can most photoresists be used, but also cost savings. (Please read the notes on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Another purpose of the present invention is to provide a method for removing the bottom anti-reflective layer. It uses wet or dry etching. Method to remove the bottom anti-reflection layer first, and then use physical impact to remove particles in the opening, which can avoid the occurrence of this paper. The standard of China paper (CNS) A4 (210 × 297 mm) 550695 A7 B7 V. Description of the invention () Particles are deposited in the reaction chamber. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs According to the above-mentioned purpose, the present invention further provides an anti-reflection layer method, which at least includes: providing a substrate, which has a first dielectric layer, and the first dielectric layer It has a first material, for example, a first protective layer, a second dielectric layer, a second dielectric layer, and a bottom anti-reflection layer are sequentially deposited; a photoresist layer is formed on the bottom anti-reflection layer, and the first light is used. The bottom anti-reflection layer, part of the third dielectric second protective layer, and part of the second dielectric layer are etched in the resistive sequence, and the etching stop layer is used to define the opening of the dielectric window; then the second photoresist The layer is on the bottom anti-reflection layer, one of the resistive layers is a mask, and the other of the second dielectric layer of the bottom anti-reflection layer is sequentially etched, and the second defined trench below is exposed approximately, and at the same time in the dielectric layer. The window opening is filled with a partial layer, and a second photoresist layer is used as a mask. For example, the bottom anti-reflection layer and the third dielectric output first protection layer are dry-etched to form a double metal inlay. Open two photoresist layers, and Etching method to remove the first protective layer of the double metal inlay to expose a part of the first conductive layer resist layer to cover the bottom anti-reflection layer on the surface of the substrate and fill the openings and trenches. Effect to adjust the appropriate exposure energy and the thickness of the photoresist layer, after exposing a transfer layer, the first protection is formed (please read the precautions on the back before filling in this page) Order. Line · This paper size applies Chinese national standards ( CNS) A4 specification (2 ^ 297 Gongchu) 550695 A7 B7 Five 'invention description () Photoresist layer left at the bottom of the double metal inlay opening and covering the _ conductor layer; and using, for example, wet or dry etching method' to remove The bottom anti-reflection layer, and for example, physical impact with Argon (Ar) ions to remove particles in the double metal inlaid openings. Brief description of the drawings: The preferred embodiments of the present invention will be described in the following text. Zhongfu uses the following figures to explain in more detail, among which: Figures 1A to 1D show the manufacturing cross-sections of the bottom anti-reflective layer when the double metal inlay structure is used in conventional technology; Figure 2A FIG. 2G is a cross-sectional view of a process for removing the bottom anti-reflection layer when performing a dual metal damascene structure according to a preferred embodiment of the present invention; and FIG. 3 is a preferred embodiment of the present invention shown in FIG. 3 The relationship between the photoresist's swing effect and the overall effect (Please read the precautions on the back before filling this page)
訂 線 明 說 照 對 號 圖 經濟部智慧財產局員工消費合作社印製 0 4 8 ο ο ο 層 層 電電 介介 材一 二 基第第 102 第一導體層 106 第一保護層 110 第二保護層 8 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公釐) 550695 A7 B7 五、發明説明（） 1 12 第三介電層 1 14 底部抗反射層 1 16 第一光阻層 118 介層窗開口 119 雙重金屬鑲嵌開口 120 第二光阻層 122 溝渠 200 基材 202 第一導體層 204 第一介電層 206 第一保護層 208 第二介電層 210 第二保護層 212 第三介電層 214 底部抗反射層 216 第一光阻層 218 介層窗開口 219 雙重金屬鑲嵌開口 220 第二光阻層 222 溝渠 224 第三光阻層 224a 第三光阻層 225a 厚度 225b 厚度 225c 厚度 (請先閲讀背面之注意事項再填寫本頁) 訂· 發明詳細說明： 本發明揭露一種移除底部抗反射層之方法，其係利用 光阻層來保護導體層並避免反應室内部微粒的沉積。為了 使本發明之敘述更加詳盡與完備，可參照下列描述並配合 第2A圖至第2G圖與第3圖之圖示。 請參照第2A圖至第2G圖，其所繪示為本發明之一較 佳實施例進行雙重金屬鑲嵌結構時移除底部抗反射層之製 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公釐) 線- 經濟部智慧財產局員工消費合作社印製 550695 A7 B7 五、發明説明（） (請先閲讀背面之注意事項再填寫本頁) 程剖面圖。請參考第2A圖，首先提供基材200，此基材200 中至少已具有第一介電層204，且此第一介電層204中具 有第一導體層2 02，其中第一導體層2 02為金屬層，其材 料係例如銅。在基材200上例如以化學氣相沉積法，依序 沉積第一保護層206、第二介電層208、第二保護層210、 第三介電層212、以及底部抗反射層214。其中第一保護層 206與第二保護層 210之材料係例如氮化矽（Siiicon N i t r i d e ; S i N x)，而第一保護層2 0 6之厚度係例如約6 2 0埃 (Angstrom ; A)，第二保護層2 1 0之厚度係例如約70〇埃。 第二介電層208與第三介電層2 1 2之材料係例如含氣二氧 化石夕（Fluorinated Silicate Glass ; FSG)，而第二介電層 208 線 之厚度係例如約5.5千埃（KA)，第三介電層2 1 2之厚度係 例如約4.5千埃。底部抗反射層2 1 4係屬於無機類底部抗 反射材料，例如非晶相碳（Amorphous Carbon ; a-C)膜、氛 化矽（SiNx)、氮氧化矽（Silicon Oxynitride ; SiOxNy)和氧化 鈦（Titanium Oxide; TiO)等，而此底部抗反射層之厚度係 例如約1.4千埃。 經濟部智慧財產局員工消費合作社印製 接著，形成一層已定義之第一光阻層216位在底部抗 反射層2 14上，利用第一光阻層2 1 6為罩幕，利用乾式名虫 刻法例如非等向性（Anisotropic)li刻法依序餘刻部分之底 部抗反射層2 1 4、部分之第三介電層2 1 2、部分之第二保護 層210、以及部分之第二介電層208，並以第一保護層2〇6 10 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐） 550695 A7 B7 五、發明説明（） 為蝕刻終止層，用以定義出介層窗開口 2U，如第2β圖所 示之結構。接著請參考第2C圖，形成一層已定義之第二光 阻層220位在底部抗反射層214i，_方面利用第二光阻 層220為罩幕，以乾式敍刻法例如非等向性麵刻法，依序 姓刻另一部分之底部抗反射層214與另一部分之第三介電 層212,且約略暴露出下方之第二介電層2〇8，用以定義出 溝渠222;而同時在介層窗開口 218中填入部分之第二光 阻層220，並利用第二光阻層22〇為軍幕，以乾式蝕刻法 例如非等向性蝕刻法，依序蝕刻暴露出之底部抗反射層214 與下方之第三介電層212，並約暴露出第一保護層2〇6，用 以形成雙重金屬鎮嵌開口 219’其中第二光阻層22〇係例 如I線或G線的光阻。接著，去除第二光阻層22〇，並以 乾式蝕刻法移除雙重金屬鑲嵌開口 219中部分之第一保護 層206 ’以暴露出部分之第—導體層2〇2，而形成如第2〇 圖所示之結構。 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 然後’請參考第2E圖’係塗佈第三光阻層224於基材 200表面之底部抗反㈣214上並填滿雙重金屬鑲嵌開口 2i9與溝渠222中，利用光阻本身的擺動致應和總體效應， 調整適當的曝光能在不使用光罩的情形下，經曝光顯 影後只殘留位於雙重金屬鑲嵌開σ 219之底部並覆蓋於第 -導體層202上的第三光阻層224a，如第2ρ圖所示之結 構。在後續蝕刻去除底部抗反㈣214及利用物理性撞擊 本紙張尺度適用中國國家標準(CNS)A4規格(210x297公I) 線 550695 A7 B7 五、發明説明（） 以:除雙重金屬鑲嵌開口 2 1 9與溝渠222中之微粒時，第 :光阻層224a可用來保護第一導體層2〇2免於後續物理性 才里擊的傷害。然後利用例如濕式或乾式蝕刻法，去除底部 抗反射層214與第三光阻層22牦，以避免在後續物理性撞 名時產生微粒沉積在反應室内部。並且例如以氬氣離子進 灯物理性撞擊來清除雙重金屬鑲嵌開口 2丨9與溝渠222中 之微粒。 塗佈第三光阻層224之步驟時，其特徵在於不使用光 罩清开y下’直接經曝光顯影只殘留位於雙重金屬鑲嵌開 口 219之底部並覆蓋在第一導體層2〇2上的第三光阻層 224a。關於調整光阻適當的曝光能量，係以第3圖為一例 子來作進一步的說明。第3圖為本發明之一較佳實施例之 光阻的擺動效應和總體效應之關係圖，其中X軸為光阻厚 度（KA) ’ γ轴為分解光阻所需之能量（MiUi-J〇uie ; mJ)，而 實線部分代表因反射率隨光阻層厚度成週期性變化所造成 擺動效應之曲線’至於虛線部分則代表在光阻層厚度差距 極大時擺動曲線整體性之趨勢變化。請同時參考第2 e圖， 在本發明中由於第三光阻層224覆蓋於溝渠222之厚度 225a、覆蓋於雙重金屬鑲嵌開口 219之厚度225b、與覆蓋 於底部抗反射層214之厚度225c，第三光阻層224之覆蓋 厚度有極大的差距，例如約為20千埃，因此可就整體效應 來找出適當的曝光能量，使第三光阻層224中厚度較小之 本紙張尺度適用肀國國家標準(CNS)A4規格(210X 297公釐) (請先閱讀背面之注意事項再填寫本頁) 訂· 經濟部智慧財產局員工消費合作社印製 550695 A7 五、發明説明（ 區域在適當的曝光能量及顯影過程中被除去，而厚度較大 之區域就可以留下，並只殘留位於雙重金屬鑲嵌開口 219 之底部且覆蓋第—導體@ 202的第三光阻I 224a。請繼續 參考第3圖，舉例而言，選擇分解光阻所需之能量為hOriU 蚪厚度在、力1 2千埃以下之光阻就會被除去，而厚度在約 1 2千埃以上之光阻就會留下。本發明適用於各種！線及g 線的光阻，依據光阻的不同，就此光阻的擺動效應和整體 效應來找出適當的曝光能量，達到與本發明相同之效果。 本發明之另一特徵在於利用濕式或乾式蝕刻法去除底 部抗反射層，在後續進行物理性撞擊來清除開口中之微粒 時’可避免產生微粒沉積於反應室的内部。 上述之製程僅為本發明其中一實施例，並非用以限制 本發明之範圍，本發明之移除底部抗反射層之方法除了適 用於各種I線及G線的光阻外，其雙重金屬鑲嵌之製程中 之保護層、介電層、金屬層等之數目及排列不限於實施例 所述，而所應用之製程亦不限於雙重金屬鑲嵌之製程，可 適用於具有開口而欲移除底部抗反射層之製裎中。 本發明之一優點就是在提供一種移除底部抗反射層之 方法，其係塗佈光阻層以覆蓋在基材表面之底部抗反射層 上並填滿開口中，利用光阻本身的擺動效應和總體效應， 13 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公釐) (請先閲讀背面之注意事項再填寫本頁) -、\一云 線一 經濟部智慧財產局員工消費合作社印製 550695 五 經濟部智慧財產局員工消費合作社印製The description of the line is based on the check mark. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 0 4 8 ο ο ο layered dielectric dielectric material 102nd first conductor layer 106 first protective layer 110 second protective layer 8 This paper size applies Chinese National Standard (CNS) A4 specification (210X 297 mm) 550695 A7 B7 V. Description of the invention () 1 12 Third dielectric layer 1 14 Bottom anti-reflection layer 1 16 First photoresist layer 118 Dielectric layer Window opening 119 Double metal inlay opening 120 Second photoresist layer 122 Trench 200 Substrate 202 First conductor layer 204 First dielectric layer 206 First protective layer 208 Second dielectric layer 210 Second protective layer 212 Third dielectric Layer 214 bottom anti-reflection layer 216 first photoresist layer 218 via window opening 219 double metal mosaic opening 220 second photoresist layer 222 trench 224 third photoresist layer 224a third photoresist layer 225a thickness 225b thickness 225c thickness (please (Please read the precautions on the back before filling this page) Order · Detailed description of the invention: The present invention discloses a method for removing the bottom anti-reflection layer, which uses a photoresist layer to protect the conductor layer and avoid the reaction chamber. Deposition of fine particles. In order to make the description of the present invention more detailed and complete, reference may be made to the following descriptions in conjunction with the diagrams of FIGS. 2A to 2G and 3. Please refer to FIG. 2A to FIG. 2G, which shows a preferred embodiment of the present invention when removing the bottom anti-reflective layer when the double metal mosaic structure is used. The paper size is applicable to China National Standard (CNS) A4 specification (210X 297mm) line-printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 550695 A7 B7 V. Description of Invention () (Please read the precautions on the back before filling this page) Referring to FIG. 2A, a substrate 200 is first provided. The substrate 200 has at least a first dielectric layer 204, and the first dielectric layer 204 has a first conductor layer 202. The first conductor layer 2 02 is a metal layer, and the material is, for example, copper. A first protective layer 206, a second dielectric layer 208, a second protective layer 210, a third dielectric layer 212, and a bottom anti-reflection layer 214 are sequentially deposited on the substrate 200 by, for example, a chemical vapor deposition method. The material of the first protective layer 206 and the second protective layer 210 is, for example, silicon nitride (Siiicon Nitride; Si N x), and the thickness of the first protective layer 206 is, for example, about 6 20 Angstroms (Angstrom; A) The thickness of the second protective layer 210 is, for example, about 70 angstroms. The material of the second dielectric layer 208 and the third dielectric layer 2 12 is, for example, fluorinated silica (FSG), and the thickness of the second dielectric layer 208 is, for example, about 5.5 kilo angstroms ( (KA). The thickness of the third dielectric layer 2 1 2 is, for example, about 4.5 kilo angstroms. The bottom anti-reflection layer 2 1 4 is an inorganic bottom anti-reflection material, such as an amorphous carbon (aC) film, silicon nitride (SiNx), silicon oxynitride (SiOxNy), and titanium oxide (Titanium Oxide; TiO), etc., and the thickness of the bottom anti-reflection layer is, for example, about 1.4 kilo angstroms. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Next, a defined first photoresist layer 216 is formed on the bottom anti-reflection layer 2 14. The first photoresist layer 2 1 6 is used as a cover and a dry famous insect is used. The engraving method is, for example, anisotropic lithography. The bottom anti-reflection layer 2 1 4 of the part, the third dielectric layer 2 1 2 of the part, the second protective layer 210 of the part, and the first Second dielectric layer 208, and the first protective layer 206 10 This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 550695 A7 B7 V. Description of the invention () is an etching stop layer, used to define The exit window 2U has a structure as shown in FIG. 2β. Next, please refer to Figure 2C to form a defined second photoresist layer 220 at the bottom anti-reflection layer 214i. The second photoresist layer 220 is used as a mask, and a dry engraving method such as an anisotropic surface is used. The engraving method sequentially etches another part of the bottom anti-reflection layer 214 and another part of the third dielectric layer 212, and approximately exposes the second dielectric layer 208 below to define the trench 222; and at the same time A part of the second photoresist layer 220 is filled in the via window opening 218 and the second photoresist layer 22 is used as a military curtain. The exposed bottom is sequentially etched by a dry etching method such as anisotropic etching. The anti-reflection layer 214 and the third dielectric layer 212 below, and approximately expose the first protective layer 206 for forming a double metal embedded opening 219 ', wherein the second photoresist layer 22o is, for example, I line or G Photoresistance of the line. Next, the second photoresist layer 22 is removed, and a portion of the first protective layer 206 ′ in the double metal damascene opening 219 is removed by a dry etching method to expose a portion of the first-conductor layer 202, and is formed as in the second example. 〇 The structure shown in the figure. (Please read the precautions on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs and then 'please refer to Figure 2E' is coated with a third photoresist layer 224 on the bottom of the substrate 200 surface anti-reverse 214 The double metal mosaic opening 2i9 and the trench 222 are filled and filled, and the swinging photoresistance and overall effect of the photoresist are used to adjust the appropriate exposure. Without the use of a photomask, only the double metal mosaic remains after exposure and development. The third photoresist layer 224a opened at the bottom of σ 219 and covered on the first conductor layer 202 has a structure as shown in FIG. 2ρ. In the subsequent etching, the bottom anti-reverse 214 is removed and the physical impact is used. The paper size applies the Chinese National Standard (CNS) A4 (210x297 male I) line 550695 A7 B7 V. Description of the invention (): In addition to the double metal inlay opening 2 1 9 With the particles in the trench 222, the first: photoresist layer 224a can be used to protect the first conductor layer 202 from subsequent physical strikes. Then, the bottom anti-reflection layer 214 and the third photoresist layer 22A are removed by, for example, wet or dry etching, so as to prevent particles from being deposited inside the reaction chamber during subsequent physical collisions. And, for example, a physical impact of an argon ion into the lamp is used to remove particles in the double metal inlaid openings 2 and 9 and the trench 222. In the step of applying the third photoresist layer 224, it is characterized in that the photoresist is not opened under a mask, and is directly exposed and developed, and only the bottom of the double metal mosaic opening 219 remains and covers the first conductor layer 202. Third photoresist layer 224a. Regarding the adjustment of the appropriate exposure energy of the photoresist, use Figure 3 as an example for further explanation. FIG. 3 is a diagram showing the relationship between the swing effect and the overall effect of a photoresist in a preferred embodiment of the present invention, where the X-axis is the thickness of the photoresist (KA) and the γ-axis is the energy required to decompose the photoresist (MiUi-J 〇uie; mJ), and the solid line represents the curve of the swing effect caused by the periodic change of the reflectivity with the thickness of the photoresist layer. As for the dotted line, it represents the trend of the integrity of the swing curve when the thickness of the photoresist layer is greatly different. . Please also refer to FIG. 2e. In the present invention, since the third photoresist layer 224 covers the thickness 225a of the trench 222, the thickness 225b of the double metal mosaic opening 219, and the thickness 225c of the bottom anti-reflection layer 214, There is a large gap in the thickness of the third photoresist layer 224, for example, about 20 kilo angstroms, so the appropriate exposure energy can be found based on the overall effect, so that the smaller thickness of the third photoresist layer 224 is suitable for the paper size Laos National Standard (CNS) A4 Specification (210X 297 mm) (Please read the notes on the back before filling out this page) Order · Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 550695 A7 The exposure energy and development process are removed, and the thicker area can be left, and only the third photoresistor I 224a located at the bottom of the double metal mosaic opening 219 and covering the first-conductor @ 202 is left. Please continue to refer to In Figure 3, for example, the energy needed to decompose the photoresist is hOriU. A photoresist with a thickness of less than 12,000 angstroms will be removed, and a photoresist with a thickness of about 12,000 angstroms will be removed. Stay. The invention is applicable to all kinds of photoresistors of the! And g-lines. According to the different photoresistors, the appropriate exposure energy can be found based on the photoresist's swing effect and the overall effect to achieve the same effect as the present invention. Another feature of the present invention The method uses wet or dry etching to remove the bottom anti-reflection layer, and prevents particles from being deposited in the reaction chamber during subsequent physical impact to remove particles in the opening. The above process is only one embodiment of the present invention. It is not intended to limit the scope of the present invention. The method for removing the bottom anti-reflection layer of the present invention is applicable to various I-line and G-line photoresists, and the protective layer, dielectric layer, The number and arrangement of metal layers and the like are not limited to those described in the embodiments, and the applied process is not limited to the process of double metal damascene, and can be applied to a system having an opening to remove the bottom anti-reflection layer. One of the inventions The advantage is to provide a method for removing the bottom anti-reflection layer, which is coated with a photoresist layer to cover the bottom anti-reflection layer on the surface of the substrate and fill the opening. The photoresistor's own swing effect and overall effect, 13 This paper size is applicable to China National Standard (CNS) A4 specification (210X 297 mm) (Please read the precautions on the back before filling this page) Printed by the Consumer Cooperatives of the Ministry of Intellectual Property Bureau of the Ministry of Economic Affairs 550695
A7 -----^------發明説明（） 調整適當的曝光能量與光阻層的厚度，經曝光顯影後只殘 留位於開口之底部並覆蓋於導體層上的光阻層，藉以在後 續蝕刻法去除底部抗反射層並以物理性撞擊來清除開口中 之微粒時，光阻層用來保護開口中的導體層並避免反應室 内部微粒的沉積。 本發明之另一優點為提供一種移除底部抗反射層之方 法，其係在不使用光罩之情形下，塗佈光阻層以覆蓋在基 材表面之底部抗反射層上並填滿開〇中，不僅大多數的光 阻均可適用，更可節省成本。 本發明之又一優點為提供一種移除底部抗反射層之方 π ’其係利用屬式或乾式姓刻法先去除底部抗反射層，在 後續利用物理性4里擊來清除開口中之微粒時，可避免產生 微粒沉積於反應室中。 如熟悉此技術之人員所瞭解的，以上所述僅為本發明 之較佳實施例而已，並非用以限定本發明之申請專利範 圍；凡其它未脫離本發明所揭示之精神下所完成之等效改 變或修飾，均應包含在下述之申請專利範圍内。 (請先閱讀背面之注意事項再填寫本頁) 訂· 線_ 本紙張尺度適用中國國家標準(CNS)A4規格(210χ 297公釐)A7 ----- ^ ------ Explanation of the invention () Adjust the appropriate exposure energy and thickness of the photoresist layer. After exposure and development, only the photoresist layer located at the bottom of the opening and covering the conductor layer is left. When the bottom anti-reflection layer is removed by subsequent etching and the particles in the opening are removed by physical impact, the photoresist layer is used to protect the conductor layer in the opening and avoid the deposition of particles inside the reaction chamber. Another advantage of the present invention is to provide a method for removing the bottom anti-reflection layer, which is to cover the bottom anti-reflection layer on the surface of the substrate with a photoresist layer without using a photomask. 〇, not only most photoresists can be applied, but also cost savings. Another advantage of the present invention is to provide a method for removing the bottom anti-reflection layer π ', which is to remove the bottom anti-reflection layer first by using a generic or dry name engraving method, and then use physical 4 strokes to remove particles in the opening In this case, the generation of particles in the reaction chamber can be avoided. As will be understood by those familiar with this technology, the above is only a preferred embodiment of the present invention, and is not intended to limit the scope of the patent application for the present invention; all others completed without departing from the spirit disclosed by the present invention Effective changes or modifications should be included in the scope of patent application described below. (Please read the precautions on the back before filling out this page) Order and Thread _ This paper size applies to China National Standard (CNS) A4 (210χ 297 mm)