JP2007290924A5 - - Google Patents

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Publication number
JP2007290924A5
JP2007290924A5 JP2006122400A JP2006122400A JP2007290924A5 JP 2007290924 A5 JP2007290924 A5 JP 2007290924A5 JP 2006122400 A JP2006122400 A JP 2006122400A JP 2006122400 A JP2006122400 A JP 2006122400A JP 2007290924 A5 JP2007290924 A5 JP 2007290924A5
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JP
Japan
Prior art keywords
crystal
semiconductor
crystal growth
layer
substrate
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Application number
JP2006122400A
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English (en)
Japanese (ja)
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JP2007290924A (ja
JP5041397B2 (ja
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Publication date
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Priority claimed from JP2006122400A external-priority patent/JP5041397B2/ja
Priority to JP2006122400A priority Critical patent/JP5041397B2/ja
Priority to TW096107865A priority patent/TW200741044A/zh
Priority to CN2007800087910A priority patent/CN101410557B/zh
Priority to US12/087,048 priority patent/US8084281B2/en
Priority to PCT/JP2007/055942 priority patent/WO2007105832A1/en
Publication of JP2007290924A publication Critical patent/JP2007290924A/ja
Publication of JP2007290924A5 publication Critical patent/JP2007290924A5/ja
Publication of JP5041397B2 publication Critical patent/JP5041397B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2006122400A 2006-03-16 2006-04-26 電子デバイス用半導体基板の製造方法 Active JP5041397B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2006122400A JP5041397B2 (ja) 2006-04-26 2006-04-26 電子デバイス用半導体基板の製造方法
TW096107865A TW200741044A (en) 2006-03-16 2007-03-07 Semiconductor substrate, electronic device, optical device, and production methods therefor
PCT/JP2007/055942 WO2007105832A1 (en) 2006-03-16 2007-03-15 Semiconductor substrate, electronic device, optical device, and production methods therefor
US12/087,048 US8084281B2 (en) 2006-03-16 2007-03-15 Semiconductor substrate, electronic device, optical device, and production methods therefor
CN2007800087910A CN101410557B (zh) 2006-03-16 2007-03-15 半导体衬底、电子器件、光学器件及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006122400A JP5041397B2 (ja) 2006-04-26 2006-04-26 電子デバイス用半導体基板の製造方法

Publications (3)

Publication Number Publication Date
JP2007290924A JP2007290924A (ja) 2007-11-08
JP2007290924A5 true JP2007290924A5 (enExample) 2009-02-26
JP5041397B2 JP5041397B2 (ja) 2012-10-03

Family

ID=38761931

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006122400A Active JP5041397B2 (ja) 2006-03-16 2006-04-26 電子デバイス用半導体基板の製造方法

Country Status (1)

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JP (1) JP5041397B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5045589B2 (ja) * 2008-07-18 2012-10-10 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の成長方法
JP5608969B2 (ja) * 2008-10-20 2014-10-22 富士通株式会社 化合物半導体装置及びその製造方法
US8686455B2 (en) * 2009-03-03 2014-04-01 Ube Industries, Ltd. Composite substrate for formation of light-emitting device, light-emitting diode device and manufacturing method thereof
JP5147092B2 (ja) * 2009-03-30 2013-02-20 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法
KR101590309B1 (ko) * 2013-07-22 2016-01-29 엔지케이 인슐레이터 엘티디 복합 기판, 그 제조 방법, 기능 소자 및 종결정 기판
JP2014031315A (ja) * 2013-11-01 2014-02-20 Ngk Insulators Ltd 高抵抗材料及びその製法
JP6006852B2 (ja) * 2015-09-16 2016-10-12 日本碍子株式会社 高抵抗材料の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7959729B2 (en) * 2003-03-17 2011-06-14 Osaka University Method for producing group-III-element nitride single crystals and apparatus used therein
JP2004363346A (ja) * 2003-06-05 2004-12-24 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JP4958207B2 (ja) * 2006-03-16 2012-06-20 豊田合成株式会社 光素子基板の製造方法

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