JP5041397B2 - 電子デバイス用半導体基板の製造方法 - Google Patents

電子デバイス用半導体基板の製造方法 Download PDF

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Publication number
JP5041397B2
JP5041397B2 JP2006122400A JP2006122400A JP5041397B2 JP 5041397 B2 JP5041397 B2 JP 5041397B2 JP 2006122400 A JP2006122400 A JP 2006122400A JP 2006122400 A JP2006122400 A JP 2006122400A JP 5041397 B2 JP5041397 B2 JP 5041397B2
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Japan
Prior art keywords
crystal
crystal growth
semiconductor
group iii
substrate
Prior art date
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Active
Application number
JP2006122400A
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English (en)
Japanese (ja)
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JP2007290924A5 (enExample
JP2007290924A (ja
Inventor
直樹 柴田
宏治 平田
史郎 山崎
克宏 今井
真 岩井
孝友 佐々木
勇介 森
史朗 川村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Toyoda Gosei Co Ltd
University of Osaka NUC
Original Assignee
NGK Insulators Ltd
Osaka University NUC
Toyoda Gosei Co Ltd
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Application filed by NGK Insulators Ltd, Osaka University NUC, Toyoda Gosei Co Ltd filed Critical NGK Insulators Ltd
Priority to JP2006122400A priority Critical patent/JP5041397B2/ja
Priority to TW096107865A priority patent/TW200741044A/zh
Priority to PCT/JP2007/055942 priority patent/WO2007105832A1/en
Priority to US12/087,048 priority patent/US8084281B2/en
Priority to CN2007800087910A priority patent/CN101410557B/zh
Publication of JP2007290924A publication Critical patent/JP2007290924A/ja
Publication of JP2007290924A5 publication Critical patent/JP2007290924A5/ja
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Publication of JP5041397B2 publication Critical patent/JP5041397B2/ja
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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Junction Field-Effect Transistors (AREA)
JP2006122400A 2006-03-16 2006-04-26 電子デバイス用半導体基板の製造方法 Active JP5041397B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2006122400A JP5041397B2 (ja) 2006-04-26 2006-04-26 電子デバイス用半導体基板の製造方法
TW096107865A TW200741044A (en) 2006-03-16 2007-03-07 Semiconductor substrate, electronic device, optical device, and production methods therefor
PCT/JP2007/055942 WO2007105832A1 (en) 2006-03-16 2007-03-15 Semiconductor substrate, electronic device, optical device, and production methods therefor
US12/087,048 US8084281B2 (en) 2006-03-16 2007-03-15 Semiconductor substrate, electronic device, optical device, and production methods therefor
CN2007800087910A CN101410557B (zh) 2006-03-16 2007-03-15 半导体衬底、电子器件、光学器件及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006122400A JP5041397B2 (ja) 2006-04-26 2006-04-26 電子デバイス用半導体基板の製造方法

Publications (3)

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JP2007290924A JP2007290924A (ja) 2007-11-08
JP2007290924A5 JP2007290924A5 (enExample) 2009-02-26
JP5041397B2 true JP5041397B2 (ja) 2012-10-03

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JP2006122400A Active JP5041397B2 (ja) 2006-03-16 2006-04-26 電子デバイス用半導体基板の製造方法

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5045589B2 (ja) * 2008-07-18 2012-10-10 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の成長方法
JP5608969B2 (ja) * 2008-10-20 2014-10-22 富士通株式会社 化合物半導体装置及びその製造方法
US8686455B2 (en) * 2009-03-03 2014-04-01 Ube Industries, Ltd. Composite substrate for formation of light-emitting device, light-emitting diode device and manufacturing method thereof
JP5147092B2 (ja) * 2009-03-30 2013-02-20 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法
KR101590309B1 (ko) * 2013-07-22 2016-01-29 엔지케이 인슐레이터 엘티디 복합 기판, 그 제조 방법, 기능 소자 및 종결정 기판
JP2014031315A (ja) * 2013-11-01 2014-02-20 Ngk Insulators Ltd 高抵抗材料及びその製法
JP6006852B2 (ja) * 2015-09-16 2016-10-12 日本碍子株式会社 高抵抗材料の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7959729B2 (en) * 2003-03-17 2011-06-14 Osaka University Method for producing group-III-element nitride single crystals and apparatus used therein
JP2004363346A (ja) * 2003-06-05 2004-12-24 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JP4958207B2 (ja) * 2006-03-16 2012-06-20 豊田合成株式会社 光素子基板の製造方法

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