JP2007242848A - 基板の製造方法及び基板処理装置 - Google Patents

基板の製造方法及び基板処理装置 Download PDF

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Publication number
JP2007242848A
JP2007242848A JP2006062495A JP2006062495A JP2007242848A JP 2007242848 A JP2007242848 A JP 2007242848A JP 2006062495 A JP2006062495 A JP 2006062495A JP 2006062495 A JP2006062495 A JP 2006062495A JP 2007242848 A JP2007242848 A JP 2007242848A
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JP
Japan
Prior art keywords
substrate
atmospheric pressure
pressure plasma
oxide
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2006062495A
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English (en)
Japanese (ja)
Other versions
JP2007242848A5 (enExample
Inventor
Koji Yabushita
宏二 薮下
Masami Hayashi
正美 林
Takahito Yamabe
貴人 山部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2006062495A priority Critical patent/JP2007242848A/ja
Priority to TW096102450A priority patent/TW200735373A/zh
Priority to KR1020070021808A priority patent/KR100879038B1/ko
Priority to CN200710085723.6A priority patent/CN101034659A/zh
Publication of JP2007242848A publication Critical patent/JP2007242848A/ja
Publication of JP2007242848A5 publication Critical patent/JP2007242848A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Liquid Crystal (AREA)
  • Weting (AREA)
JP2006062495A 2006-03-08 2006-03-08 基板の製造方法及び基板処理装置 Withdrawn JP2007242848A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006062495A JP2007242848A (ja) 2006-03-08 2006-03-08 基板の製造方法及び基板処理装置
TW096102450A TW200735373A (en) 2006-03-08 2007-01-23 Substrate manufacturing method and substrate processing device
KR1020070021808A KR100879038B1 (ko) 2006-03-08 2007-03-06 기판의 제조 방법 및 기판 처리장치
CN200710085723.6A CN101034659A (zh) 2006-03-08 2007-03-08 基板的制造方法及基板处理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006062495A JP2007242848A (ja) 2006-03-08 2006-03-08 基板の製造方法及び基板処理装置

Publications (2)

Publication Number Publication Date
JP2007242848A true JP2007242848A (ja) 2007-09-20
JP2007242848A5 JP2007242848A5 (enExample) 2009-02-26

Family

ID=38588105

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006062495A Withdrawn JP2007242848A (ja) 2006-03-08 2006-03-08 基板の製造方法及び基板処理装置

Country Status (4)

Country Link
JP (1) JP2007242848A (enExample)
KR (1) KR100879038B1 (enExample)
CN (1) CN101034659A (enExample)
TW (1) TW200735373A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018181296A1 (ja) * 2017-03-29 2018-10-04 シャープ株式会社 チャネルエッチ型薄膜トランジスタの製造方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5794194B2 (ja) * 2012-04-19 2015-10-14 東京エレクトロン株式会社 基板処理装置
KR102436641B1 (ko) 2015-10-23 2022-08-26 삼성디스플레이 주식회사 표시 장치 및 그 제조방법
CN106711231A (zh) * 2017-01-13 2017-05-24 京东方科技集团股份有限公司 薄膜晶体管及其制备方法、显示基板及其制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3081954B2 (ja) * 1995-06-13 2000-08-28 日本プレシジョン・サーキッツ株式会社 Ｍｏｓ型トランジスタの製造方法
US5935648A (en) 1997-03-28 1999-08-10 The United States Of America As Represented By The Secretary Of The Air Force High surface area molybdenum nitride electrodes
US6291282B1 (en) * 1999-02-26 2001-09-18 Texas Instruments Incorporated Method of forming dual metal gate structures or CMOS devices
KR100604804B1 (ko) * 2000-04-17 2006-07-28 삼성전자주식회사 몰리브데늄 박막 및 실리콘 박막을 포함하는 다층막 제조방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018181296A1 (ja) * 2017-03-29 2018-10-04 シャープ株式会社 チャネルエッチ型薄膜トランジスタの製造方法

Also Published As

Publication number Publication date
TWI342071B (enExample) 2011-05-11
CN101034659A (zh) 2007-09-12
KR100879038B1 (ko) 2009-01-15
KR20070092121A (ko) 2007-09-12
TW200735373A (en) 2007-09-16

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