KR100879038B1 - 기판의 제조 방법 및 기판 처리장치 - Google Patents

기판의 제조 방법 및 기판 처리장치 Download PDF

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Publication number
KR100879038B1
KR100879038B1 KR1020070021808A KR20070021808A KR100879038B1 KR 100879038 B1 KR100879038 B1 KR 100879038B1 KR 1020070021808 A KR1020070021808 A KR 1020070021808A KR 20070021808 A KR20070021808 A KR 20070021808A KR 100879038 B1 KR100879038 B1 KR 100879038B1
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KR
South Korea
Prior art keywords
substrate
molybdenum
atmospheric pressure
electrode layer
pressure plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020070021808A
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English (en)
Korean (ko)
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KR20070092121A (ko
Inventor
코지 야부시타
마사미 하야시
타카히토 야마베
Original Assignee
미쓰비시덴키 가부시키가이샤
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Publication of KR20070092121A publication Critical patent/KR20070092121A/ko
Application granted granted Critical
Publication of KR100879038B1 publication Critical patent/KR100879038B1/ko
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Liquid Crystal (AREA)
  • Weting (AREA)
KR1020070021808A 2006-03-08 2007-03-06 기판의 제조 방법 및 기판 처리장치 Expired - Fee Related KR100879038B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2006-00062495 2006-03-08
JP2006062495A JP2007242848A (ja) 2006-03-08 2006-03-08 基板の製造方法及び基板処理装置

Publications (2)

Publication Number Publication Date
KR20070092121A KR20070092121A (ko) 2007-09-12
KR100879038B1 true KR100879038B1 (ko) 2009-01-15

Family

ID=38588105

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070021808A Expired - Fee Related KR100879038B1 (ko) 2006-03-08 2007-03-06 기판의 제조 방법 및 기판 처리장치

Country Status (4)

Country Link
JP (1) JP2007242848A (enExample)
KR (1) KR100879038B1 (enExample)
CN (1) CN101034659A (enExample)
TW (1) TW200735373A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9786694B2 (en) 2015-10-23 2017-10-10 Samsung Display Co., Ltd. Display device and manufacturing method thereof

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5794194B2 (ja) * 2012-04-19 2015-10-14 東京エレクトロン株式会社 基板処理装置
CN106711231A (zh) * 2017-01-13 2017-05-24 京东方科技集团股份有限公司 薄膜晶体管及其制备方法、显示基板及其制备方法
WO2018181296A1 (ja) * 2017-03-29 2018-10-04 シャープ株式会社 チャネルエッチ型薄膜トランジスタの製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08340110A (ja) * 1995-06-13 1996-12-24 Nippon Precision Circuits Kk Ｍｏｓ型トランジスタの製造方法
US5935648A (en) 1997-03-28 1999-08-10 The United States Of America As Represented By The Secretary Of The Air Force High surface area molybdenum nitride electrodes
JP2000252371A (ja) * 1999-02-26 2000-09-14 Texas Instr Inc <Ti> トランジスタ作製方法
KR20010096130A (ko) * 2000-04-17 2001-11-07 윤종용 몰리브데늄 박막 및 실리콘 박막을 포함하는 다층막 제조방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08340110A (ja) * 1995-06-13 1996-12-24 Nippon Precision Circuits Kk Ｍｏｓ型トランジスタの製造方法
US5935648A (en) 1997-03-28 1999-08-10 The United States Of America As Represented By The Secretary Of The Air Force High surface area molybdenum nitride electrodes
JP2000252371A (ja) * 1999-02-26 2000-09-14 Texas Instr Inc <Ti> トランジスタ作製方法
KR20010096130A (ko) * 2000-04-17 2001-11-07 윤종용 몰리브데늄 박막 및 실리콘 박막을 포함하는 다층막 제조방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9786694B2 (en) 2015-10-23 2017-10-10 Samsung Display Co., Ltd. Display device and manufacturing method thereof

Also Published As

Publication number Publication date
TWI342071B (enExample) 2011-05-11
CN101034659A (zh) 2007-09-12
JP2007242848A (ja) 2007-09-20
KR20070092121A (ko) 2007-09-12
TW200735373A (en) 2007-09-16

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