JP2007221128A - 少なくとも1個のパワー半導体モジュールと冷却部とを備えた構造体および関連する製造方法 - Google Patents
少なくとも1個のパワー半導体モジュールと冷却部とを備えた構造体および関連する製造方法 Download PDFInfo
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- 238000001816 cooling Methods 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 238000003825 pressing Methods 0.000 claims abstract description 50
- 239000004020 conductor Substances 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 239000011810 insulating material Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 2
- 238000003466 welding Methods 0.000 claims description 2
- 238000010292 electrical insulation Methods 0.000 claims 1
- 239000000470 constituent Substances 0.000 abstract 2
- 239000011247 coating layer Substances 0.000 description 4
- 238000010137 moulding (plastic) Methods 0.000 description 4
- 239000002985 plastic film Substances 0.000 description 3
- 229920006255 plastic film Polymers 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
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- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000012772 electrical insulation material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】本発明は押圧接触構造のパワー半導体モジュールと冷却部とを備えた構造体および関連する製造方法に関する。本明細書において、負荷端子要素は、帯状区間とこの帯状区間から延在した接触脚部とを有する金属成形体として形成されている。この帯状区間は基板表面に対して平行にかつ基板表面から離隔して配置されている。接触脚部は帯状区間から基板の導体路まで達し、かつこの導体路に接触している。冷却部と筐体と押圧板は第1ユニットを形成し、この第1ユニットは基板と負荷端子要素とによって形成された第2ユニットから機械的に切り離されている。
【選択図】図1
Description
負荷端子要素の上方に蓄圧器を配置するステップと、
蓄圧器上において押圧板を筐体上または筐体内に仮止めするステップと、
回路に合わせて接続されたパワー半導体素子を載置しかつ絶縁材の塊によって電気絶縁された少なくとも1枚の基板を、筐体の付設凹部内に配置し、この場合絶縁材の塊が基板と筐体とを付着連結するステップと、
少なくとも1個のパワー半導体モジュールを冷却部上に配置し、筐体を冷却部上に固定するステップと、
押圧板を筐体および/または冷却部にねじ止めすることによって、蓄圧器を介してパワー半導体モジュールに押圧力を加え、そして負荷端子要素の接触脚部を介して少なくとも1枚の基板に押圧力を加えて、基板を冷却部に熱的に接触させるステップと、である。
2 冷却部
3 筐体
5 基板
40、42、44 負荷端子要素
400、420、440 接触脚部
402、422、442 帯状区間
404、424、444 接触装置
408 可撓性区間
46 電気絶縁材、プラスチックフィルム
52 絶縁材料本体
54 導体路
60、64 パワー半導体素子
70 押圧装置
72 押圧板
74 蓄圧器
Claims (9)
- 冷却部(2)に押圧接触させる構造のパワー半導体モジュール(1)の構造体であって、
前記パワー半導体モジュール(1)が少なくとも1枚の基板(5)と、この基板上に配置された少なくとも2個のパワー半導体素子(60、64)と、筐体(3)と、外部に通じる負荷端子要素(40、42、44)およびコントロール端子要素と、形状安定性のある押圧板(72)および弾性的な蓄圧器(74)を有する押圧装置(70)とを備え、
前記基板(5)が絶縁材料本体(52)を備え、前記パワー半導体モジュール(1)の内部寄りの絶縁材料本体の第1主面上に、負荷電位を有する導体路(54)が配置され、
前記負荷端子要素(40、42、44)がそれぞれ、帯状区間(402、422、442)とそれぞれこの帯状区間から延在した接触脚部(40)とを有する金属成形体として形成され、上記帯状区間が基板表面に対して平行にかつ基板表面から離隔して配置され、前記接触脚部(400、420、440)が前記帯状区間(402、422、442)から基板(5)の導体路(54)まで達し、かつこの導体路に接触し、
前記冷却部(2)と前記筐体(3)と前記押圧板(72)とが第1ユニットを形成し、この第1ユニットが前記基板(5)と負荷端子要素(40、42、44)とによって形成された第2ユニットから機械的に切り離されている、構造体。 - 前記パワー半導体モジュール(1)の縦方向中央に補助端子要素が配置され、前記パワー半導体モジュール(1)の付設の縦方向区間が最大で前記パワー半導体モジュール(1)の半分の長さを有することを特徴とする請求項1に記載の構造体。
- 前記パワー半導体モジュール(1)の前記負荷端子要素(40、42、44)が、前記基板(5)の上方の前記帯状区間(402、422、442)と外部接続のための各接触装置(404、424、444)との間に、機械的に可撓性の区間(408)を備えていることを特徴とする請求項1に記載の構造体。
- 機械的に可撓性の前記区間(408)が銅製のウェブとして形成されていることを特徴とする請求項3に記載の構造体。
- 前記銅製のウェブが付設の負荷端子要素(40、42、44)に対して溶接技術で連結されていることを特徴とする請求項4に記載の構造体。
- 前記各基板(5)が前記筐体(3)内で少なくとも0.2mmの横方向移動度を有することを特徴とする請求項1〜5のいずれか一項に記載の構造体。
- 請求項1に記載の構造体の製造方法であって、次のステップ、すなわち、
− 適切な相互の電気絶縁体(46)を有する負荷端子要素(40、42、44)を、パワー半導体モジュール(1)の筐体(3)内に相互に配置するステップと、
− 前記負荷端子要素(40、42、44)の上方に蓄圧器(74)を配置するステップと、
− 前記蓄圧器(74)上に押圧板(72)を筐体(3)上または筐体内で仮止めするステップと、
− 回路に合わせて接続されたパワー半導体素子(60、64)を載置しかつ絶縁材の塊によって電気絶縁された少なくとも1枚の基板(5)を、筐体(3)の凹部内に配置し、その際に前記絶縁材の塊が前記基板(5)と前記筐体(3)を付着連結するステップと、
− 少なくとも1個のパワー半導体モジュール(1)を冷却部(2)上に配置し、前記筐体(3)を前記冷却部(2)上に固定するステップと、
− 前記押圧板(72)を前記筐体(3)および/または前記冷却部(2)にねじ止めすることによって、前記押圧板(72)を介して前記パワー半導体モジュール(1)に押圧力を加え、前記蓄圧器(74)を介して前記負荷端子要素(40、42、44)に押圧力を加え、そして前記負荷端子要素の接触脚部(400、420、440)を介して少なくとも1枚の基板(5)に押圧力を加えて、前記基板を前記冷却部(2)に熱的に接触させるステップと、を含み、
前記押圧板(72)を配置する前に、任意の2つの上記ステップの間で補助端子要素を、そのために設けられたガイド内に配置することを特徴とする方法。 - 前記蓄圧器(74)上に前記押圧板(72)を前記筐体(3)内で仮止めすることが、前記押圧板(72)と前記筐体(3)との間のスナップ止め継手によって行われることを特徴とする請求項7に記載の方法。
- 前記絶縁材の塊が最初に、前記基板(5)の縁領域の周りに履帯のように取り付けられ、続いて履帯の内部にある範囲に鋳込まれることを特徴とする請求項7に記載の方法。
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DE102006006424.0 | 2006-02-13 | ||
DE102006006424A DE102006006424B4 (de) | 2006-02-13 | 2006-02-13 | Anordnung mit mindestens einem Leistungshalbleitermodul und einem Kühlbauteil und zugehöriges Herstellungsverfahren |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010028118A (ja) * | 2008-07-22 | 2010-02-04 | Semikron Elektronik Gmbh & Co Kg | パワー半導体モジュール |
JP2011101010A (ja) * | 2009-11-04 | 2011-05-19 | Semikron Elektronik Gmbh & Co Kg | パワー半導体モジュール |
JP2011119736A (ja) * | 2009-12-05 | 2011-06-16 | Semikron Elektronik Gmbh & Co Kg | ハイブリッド圧力アキュムレータを備えた圧力接触連結型パワー半導体モジュール |
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DE102007054709B4 (de) | 2007-11-16 | 2014-11-13 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit einem Substrat und mit einer Druckeinrichtung |
KR101073286B1 (ko) * | 2008-12-03 | 2011-10-12 | 엘에스산전 주식회사 | 전력용 반도체 모듈 |
DE102009005915B4 (de) * | 2009-01-23 | 2013-07-11 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul in Druckkontaktausführung |
DE102009057145B4 (de) * | 2009-12-05 | 2013-12-19 | Semikron Elektronik Gmbh & Co. Kg | Druckkontaktiertes Leistungshalbleitermodul mit teilweise bandartigen Lastanschlusselementen |
CN103367279B (zh) * | 2012-03-30 | 2017-05-03 | 南京皓赛米电力科技有限公司 | 双面微通道液冷功率半导体整晶圆平板压接封装结构 |
DE102013200526B4 (de) | 2013-01-16 | 2019-11-21 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul und Verfahren zur Herstellung eines Leistungshalbleitermoduls |
DE102013104950B3 (de) * | 2013-05-14 | 2014-04-30 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul und Anordnung hiermit |
US9431311B1 (en) | 2015-02-19 | 2016-08-30 | Semiconductor Components Industries, Llc | Semiconductor package with elastic coupler and related methods |
DE102015109710B4 (de) * | 2015-06-17 | 2019-10-31 | Avl Software And Functions Gmbh | Design einer Leistungszelle |
DE102016119631B4 (de) * | 2016-02-01 | 2021-11-18 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit einem Druckeinleitkörper und Anordnung hiermit |
DE102016113152B4 (de) | 2016-07-18 | 2019-12-19 | Semikron Elektronik Gmbh & Co. Kg | Leistungselektronische Schalteinrichtung und Leistungshalbleitermodul hiermit |
DE102017129707A1 (de) * | 2017-12-13 | 2019-06-13 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Herstellung eines leistungselektronischen Systems |
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JP2010028118A (ja) * | 2008-07-22 | 2010-02-04 | Semikron Elektronik Gmbh & Co Kg | パワー半導体モジュール |
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Also Published As
Publication number | Publication date |
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EP1818982B1 (de) | 2014-01-01 |
EP1818982A2 (de) | 2007-08-15 |
DE102006006424B4 (de) | 2011-11-17 |
DE102006006424A1 (de) | 2007-08-23 |
JP5114065B2 (ja) | 2013-01-09 |
US20070194443A1 (en) | 2007-08-23 |
EP1818982A3 (de) | 2010-11-10 |
US7592698B2 (en) | 2009-09-22 |
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