JP2011119736A - ハイブリッド圧力アキュムレータを備えた圧力接触連結型パワー半導体モジュール - Google Patents
ハイブリッド圧力アキュムレータを備えた圧力接触連結型パワー半導体モジュール Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 230000005540 biological transmission Effects 0.000 claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 9
- 238000010137 moulding (plastic) Methods 0.000 claims description 16
- 239000004020 conductor Substances 0.000 claims description 15
- 239000006260 foam Substances 0.000 claims description 8
- 238000001816 cooling Methods 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000010397 one-hybrid screening Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
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Abstract
【解決手段】第1の負荷接続素子40および少なくとも1つの別の負荷接続素子42が、それぞれ、圧力伝達部分402、422と、その圧力伝達部分から延びるそれぞれ少なくとも1つの接点脚400、420とを有する金属の成形体として形成され、各圧力伝達部分は、基板5の表面にほぼ平行に、かつその基板表面から離して配置され、接点脚は、圧力伝達部分から基板に延びて、基板と回路適合するように接触する。さらに、圧力要素72からの、第1圧力伝達部分への圧力伝達、および/または、中間の少なくとも1つの圧力伝達部分を介してのさらに別の隣接する圧力伝達部分への圧力伝達が、異なるバネ定数を有する少なくとも2つの部分領域を含むハイブリッドの、弾力のあるプラスチック成形体80によって行われる。
【選択図】図1
Description
2 冷却コンポーネント
3 ハウジング
30 ハウジング部分
300 刳り抜き部
32 電流センサー
40 負荷接続素子
400 接点脚
402 圧力伝達部分
404 外部接続素子
42 負荷接続素子
420 接点脚
422 圧力伝達部分
424 外部接続素子
44 負荷接続素子
440 接点脚
442 圧力伝達部分
444 外部接続素子
48 補助接続素子
5 基板
50 被膜
52 絶縁性の本体
54 導電体トラック
60 パワー半導体素子
62 ワイヤ接合
70 圧力装置
72 圧力要素
80 プラスチック成形体
800 第1部分領域
802 第2部分領域
804 第1主表面
806 第2主表面
Claims (10)
- 少なくとも1つの基板(5)と、その上に配置されるパワー半導体素子(60)と、ハウジング(3)と、外部に導出される負荷接続素子(40、42、44)とを含み、さらに、圧力要素(72)を有する圧力装置(70)を含むパワー半導体モジュール(1)であり、前記基板(5)は、パワー半導体モジュールの内部に面するその第1主表面上に、負荷の電位を有する導電体トラック(54)を有するパワー半導体モジュール(1)であって、
第1の負荷接続素子(40)および少なくとも1つの別の負荷接続素子(42、44)が、それぞれ、圧力伝達部分(402、422、442)と、その圧力伝達部分から延びるそれぞれすくなくとも1つの接点脚(400、420、440)とを有する金属の成形体として形成され、前記各圧力伝達部分(402、422、442)は、前記基板の表面にほぼ平行に、かつその基板表面から離して配置され、前記接点脚(400、420、440)は、前記圧力伝達部分(402、422、442)から前記基板(5)に延びて、前記基板(5)と回路適合するように接触し、かつ、
前記圧力要素(72)からの、前記第1圧力伝達部分(402)への圧力伝達、および/または、中間の少なくとも1つの圧力伝達部分(422)を介してのさらに別の隣接する圧力伝達部分(442)への圧力伝達が、異なるバネ定数を有する少なくとも2つの部分領域(800、802)を含むハイブリッドの、弾力のあるプラスチック成形体(80)によって行われる、
パワー半導体モジュール(1)。 - 前記プラスチック成形体(80)が、非圧縮状態において、すべての部分領域(800、802)において一定の厚さを有し、従って、2つの平行な主表面(804、806)を有する、
請求項1に記載のパワー半導体モジュール(1)。 - 前記プラスチック成形体(80)が、非圧縮状態において、それぞれの部分領域(800、802)において、最大で平均厚さの±10%の変動幅の異なる厚さを有し、その結果、実質的に平行な主表面を有する、
請求項1に記載のパワー半導体モジュール(1)。 - 前記プラスチック成形体(80)が、前記第1主表面から前記第2主表面(804、806)に延びると共にその主表面に平行に広がる複数の第2部分領域(802)であって、その間に配置される第1部分領域(800)よりも高いバネ定数を有する複数の第2部分領域(802)を有する、
請求項2または3に記載のパワー半導体モジュール(1)。 - 前記第1部分領域(800)が、前記第2部分領域(802)よりも低いバネ定数を有する、
請求項4に記載のパワー半導体モジュール(1)。 - すべての第2部分領域(802)が、主表面(804、806)の平面図において、第1部分領域(800)によって閉囲される、
請求項4に記載のパワー半導体モジュール(1)。 - 前記第2部分領域(802)が、実質的に圧力の方向において、接点脚(400、420、440)と同一線上に配置される、
請求項1に記載のパワー半導体モジュール(1)。 - 前記プラスチック成形体(80)が、独立気泡発泡体または一体型発泡体から構成される、
請求項1に記載のパワー半導体モジュール(1)。 - 前記異なるバネ定数が、前記それぞれの部分領域(800、802)の発泡体の異なる密度によって形成される、
請求項8に記載のパワー半導体モジュール(1)。 - 前記異なるバネ定数が、前記それぞれの部分領域(800、802)の発泡体の異なる気泡径によって形成される、
請求項8に記載のパワー半導体モジュール(1)。
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DE102009057146.9 | 2009-12-05 | ||
DE102009057146A DE102009057146B4 (de) | 2009-12-05 | 2009-12-05 | Druckkontaktiertes Leistungshalbleitermodul mit Hybriddruckspeicher |
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DE102015114191B3 (de) * | 2015-08-26 | 2016-11-03 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit einer Mehrzahl von Submodulen und mit einer Druckeinrichtung und Anordnung hiermit |
AT518126B1 (de) * | 2015-12-01 | 2020-01-15 | Melecs Ews Gmbh | Elektronisches Gerät mit Kühlvorrichtung und ein zugehöriges Montageverfahren |
DE102016112779B4 (de) | 2016-07-12 | 2022-02-24 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitereinrichtung und Verfahren zur Herstellung einer Leistungshalbleitereinrichtung |
DE102016115572B4 (de) | 2016-08-23 | 2019-06-13 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitereinrichtungssystem mit einer ersten und einer zweiten Leistungshalbleitereinrichtung |
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JP2007221127A (ja) * | 2006-02-13 | 2007-08-30 | Semikron Elektronik Gmbh & Co Kg | パワー半導体モジュールおよび関連する製作方法 |
JP2007221128A (ja) * | 2006-02-13 | 2007-08-30 | Semikron Elektronik Gmbh & Co Kg | 少なくとも1個のパワー半導体モジュールと冷却部とを備えた構造体および関連する製造方法 |
JP2007335858A (ja) * | 2006-06-14 | 2007-12-27 | Semikron Elektronik Gmbh & Co Kg | 互いに電気絶縁された端子要素を備えたパワー半導体モジュール |
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US6828600B2 (en) * | 1997-05-09 | 2004-12-07 | Eupec Europaeische Gesellschaft Fuer Leistungshalbleiter Mbh | Power semiconductor module with ceramic substrate |
DE19719703C5 (de) | 1997-05-09 | 2005-11-17 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG | Leistungshalbleitermodul mit Keramiksubstrat |
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JP2006124499A (ja) * | 2004-10-28 | 2006-05-18 | Oji Paper Co Ltd | 不均一発泡体の製造方法 |
JP2007221127A (ja) * | 2006-02-13 | 2007-08-30 | Semikron Elektronik Gmbh & Co Kg | パワー半導体モジュールおよび関連する製作方法 |
JP2007221128A (ja) * | 2006-02-13 | 2007-08-30 | Semikron Elektronik Gmbh & Co Kg | 少なくとも1個のパワー半導体モジュールと冷却部とを備えた構造体および関連する製造方法 |
JP2007335858A (ja) * | 2006-06-14 | 2007-12-27 | Semikron Elektronik Gmbh & Co Kg | 互いに電気絶縁された端子要素を備えたパワー半導体モジュール |
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KR101695499B1 (ko) | 2017-01-11 |
DK2341535T3 (da) | 2012-10-01 |
ES2390602T3 (es) | 2012-11-14 |
EP2341535B1 (de) | 2012-07-04 |
CN102142406B (zh) | 2014-11-05 |
DE102009057146A1 (de) | 2011-06-09 |
CN102142406A (zh) | 2011-08-03 |
JP5695892B2 (ja) | 2015-04-08 |
DE102009057146B4 (de) | 2013-09-26 |
EP2341535A1 (de) | 2011-07-06 |
KR20110063614A (ko) | 2011-06-13 |
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