JP2007173834A5 - - Google Patents

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Publication number
JP2007173834A5
JP2007173834A5 JP2006344661A JP2006344661A JP2007173834A5 JP 2007173834 A5 JP2007173834 A5 JP 2007173834A5 JP 2006344661 A JP2006344661 A JP 2006344661A JP 2006344661 A JP2006344661 A JP 2006344661A JP 2007173834 A5 JP2007173834 A5 JP 2007173834A5
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JP
Japan
Prior art keywords
active region
well
eeprom
floating gate
erase
Prior art date
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Granted
Application number
JP2006344661A
Other languages
English (en)
Japanese (ja)
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JP2007173834A (ja
JP5259081B2 (ja
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Publication date
Priority claimed from KR1020050127770A external-priority patent/KR100660901B1/ko
Application filed filed Critical
Publication of JP2007173834A publication Critical patent/JP2007173834A/ja
Publication of JP2007173834A5 publication Critical patent/JP2007173834A5/ja
Application granted granted Critical
Publication of JP5259081B2 publication Critical patent/JP5259081B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2006344661A 2005-12-22 2006-12-21 単一ゲート構造を有するｅｅｐｒｏｍ、該ｅｅｐｒｏｍの動作方法及び該ｅｅｐｒｏｍの製造方法 Expired - Fee Related JP5259081B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2005-0127770 2005-12-22
KR1020050127770A KR100660901B1 (ko) 2005-12-22 2005-12-22 단일 게이트 구조를 갖는 이이피롬, 상기 이이피롬의동작방법 및 상기 이이피롬의 제조방법

Publications (3)

Publication Number Publication Date
JP2007173834A JP2007173834A (ja) 2007-07-05
JP2007173834A5 true JP2007173834A5 (enExample) 2010-02-12
JP5259081B2 JP5259081B2 (ja) 2013-08-07

Family

ID=37815403

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006344661A Expired - Fee Related JP5259081B2 (ja) 2005-12-22 2006-12-21 単一ゲート構造を有するｅｅｐｒｏｍ、該ｅｅｐｒｏｍの動作方法及び該ｅｅｐｒｏｍの製造方法

Country Status (5)

Country Link
US (2) US7593261B2 (enExample)
JP (1) JP5259081B2 (enExample)
KR (1) KR100660901B1 (enExample)
CN (1) CN101013701A (enExample)
DE (1) DE102006062381B4 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005002739B4 (de) 2005-01-20 2010-11-25 Infineon Technologies Ag Verfahren zum Herstellen eines Feldeffekttransistors, Tunnel-Feldeffekttransistor und integrierte Schaltungsanordnung mit mindestens einem Feldeffekttransistor
KR100660901B1 (ko) * 2005-12-22 2006-12-26 삼성전자주식회사 단일 게이트 구조를 갖는 이이피롬, 상기 이이피롬의동작방법 및 상기 이이피롬의 제조방법
US8472251B2 (en) * 2008-02-11 2013-06-25 Aplus Flash Technology, Inc. Single-polycrystalline silicon electrically erasable and programmable nonvolatile memory device
US7989875B2 (en) * 2008-11-24 2011-08-02 Nxp B.V. BiCMOS integration of multiple-times-programmable non-volatile memories
KR20100072979A (ko) * 2008-12-22 2010-07-01 주식회사 동부하이텍 싱글 게이트 구조의 반도체 메모리 소자
JP5467809B2 (ja) * 2009-07-16 2014-04-09 ルネサスエレクトロニクス株式会社 半導体装置
JP2011176163A (ja) 2010-02-25 2011-09-08 Panasonic Corp 不揮発性半導体記憶装置
US8199578B2 (en) * 2010-06-03 2012-06-12 Ememory Technology Inc. Single polysilicon layer non-volatile memory and operating method thereof
KR101291750B1 (ko) 2011-10-14 2013-07-31 주식회사 동부하이텍 이이피롬과 그 제조 방법
JP5690873B2 (ja) * 2013-06-07 2015-03-25 イーメモリー テクノロジー インコーポレイテッド 消去可能プログラム可能単一ポリ不揮発性メモリ
US9450052B1 (en) * 2015-07-01 2016-09-20 Chengdu Monolithic Power Systems Co., Ltd. EEPROM memory cell with a coupler region and method of making the same
JP6954854B2 (ja) * 2017-03-31 2021-10-27 旭化成エレクトロニクス株式会社 不揮発性記憶素子および基準電圧生成回路
US10896979B2 (en) * 2017-09-28 2021-01-19 International Business Machines Corporation Compact vertical injection punch through floating gate analog memory and a manufacture thereof
US10685716B1 (en) * 2019-04-11 2020-06-16 Yield Microelectronics Corp. Method of fast erasing low-current EEPROM array
IT202100008075A1 (it) * 2021-03-31 2022-10-01 St Microelectronics Srl Memoria non volatile a singolo poly, porta flottante, programmabile poche volte e relativo metodo di polarizzazone
US11984165B2 (en) * 2022-05-24 2024-05-14 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device with reduced area

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5640346A (en) 1992-03-03 1997-06-17 Harris Corporation Electrically programmable memory cell
US5523964A (en) * 1994-04-07 1996-06-04 Symetrix Corporation Ferroelectric non-volatile memory unit
JP2596695B2 (ja) * 1993-05-07 1997-04-02 インターナショナル・ビジネス・マシーンズ・コーポレイション Ｅｅｐｒｏｍ
US5615150A (en) * 1995-11-02 1997-03-25 Advanced Micro Devices, Inc. Control gate-addressed CMOS non-volatile cell that programs through gates of CMOS transistors
US5587945A (en) * 1995-11-06 1996-12-24 Advanced Micro Devices, Inc. CMOS EEPROM cell with tunneling window in the read path
US5646901A (en) 1996-03-26 1997-07-08 Advanced Micro Devices, Inc. CMOS memory cell with tunneling during program and erase through the NMOS and PMOS transistors and a pass gate separating the NMOS and PMOS transistors
US6005270A (en) * 1997-11-10 1999-12-21 Sony Corporation Semiconductor nonvolatile memory device and method of production of same
US5886920A (en) * 1997-12-01 1999-03-23 Motorola, Inc. Variable conducting element and method of programming
US6198652B1 (en) * 1998-04-13 2001-03-06 Kabushiki Kaisha Toshiba Non-volatile semiconductor integrated memory device
US5969992A (en) 1998-12-21 1999-10-19 Vantis Corporation EEPROM cell using P-well for tunneling across a channel
JP4212178B2 (ja) * 1999-03-12 2009-01-21 株式会社東芝 半導体集積回路の製造方法
US6326663B1 (en) 1999-03-26 2001-12-04 Vantis Corporation Avalanche injection EEPROM memory cell with P-type control gate
JP3377762B2 (ja) * 1999-05-19 2003-02-17 株式会社半導体理工学研究センター 強誘電体不揮発性メモリ
JP2001085660A (ja) * 1999-09-10 2001-03-30 Toshiba Corp 固体撮像装置及びその制御方法
JP2001185633A (ja) * 1999-12-15 2001-07-06 Texas Instr Inc <Ti> Ｅｅｐｒｏｍデバイス
JP3762658B2 (ja) * 2001-05-17 2006-04-05 シャープ株式会社 不揮発性半導体記憶装置の駆動方法
JP4859292B2 (ja) * 2001-07-02 2012-01-25 富士通セミコンダクター株式会社 半導体集積回路装置およびｎａｎｄ型不揮発性半導体装置
JP2005353984A (ja) 2004-06-14 2005-12-22 Seiko Epson Corp 不揮発性記憶装置
US7098499B2 (en) * 2004-08-16 2006-08-29 Chih-Hsin Wang Electrically alterable non-volatile memory cell
KR100660901B1 (ko) * 2005-12-22 2006-12-26 삼성전자주식회사 단일 게이트 구조를 갖는 이이피롬, 상기 이이피롬의동작방법 및 상기 이이피롬의 제조방법

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