JP2007173780A - 有機発光表示素子及びその製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000002019 doping agent Substances 0.000 claims abstract description 16
- 238000002347 injection Methods 0.000 claims description 70
- 239000007924 injection Substances 0.000 claims description 70
- 239000000463 material Substances 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 29
- 239000000126 substance Substances 0.000 claims description 18
- 230000005525 hole transport Effects 0.000 claims description 15
- 238000007740 vapor deposition Methods 0.000 claims description 15
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 10
- 230000000903 blocking effect Effects 0.000 claims description 10
- 229910044991 metal oxide Inorganic materials 0.000 claims description 9
- 150000004706 metal oxides Chemical class 0.000 claims description 9
- 238000004770 highest occupied molecular orbital Methods 0.000 claims description 8
- DMEVMYSQZPJFOK-UHFFFAOYSA-N 3,4,5,6,9,10-hexazatetracyclo[12.4.0.02,7.08,13]octadeca-1(18),2(7),3,5,8(13),9,11,14,16-nonaene Chemical group N1=NN=C2C3=CC=CC=C3C3=CC=NN=C3C2=N1 DMEVMYSQZPJFOK-UHFFFAOYSA-N 0.000 claims description 7
- 125000000217 alkyl group Chemical group 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 7
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 claims description 7
- IXHWGNYCZPISET-UHFFFAOYSA-N 2-[4-(dicyanomethylidene)-2,3,5,6-tetrafluorocyclohexa-2,5-dien-1-ylidene]propanedinitrile Chemical compound FC1=C(F)C(=C(C#N)C#N)C(F)=C(F)C1=C(C#N)C#N IXHWGNYCZPISET-UHFFFAOYSA-N 0.000 claims description 6
- 150000001412 amines Chemical class 0.000 claims description 6
- 150000001408 amides Chemical class 0.000 claims description 5
- 125000003118 aryl group Chemical group 0.000 claims description 5
- 125000004432 carbon atom Chemical group C* 0.000 claims description 5
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 claims description 5
- 125000000623 heterocyclic group Chemical group 0.000 claims description 5
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 claims description 4
- 150000002148 esters Chemical class 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 4
- 150000002825 nitriles Chemical group 0.000 claims description 4
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 4
- DYIZHKNUQPHNJY-UHFFFAOYSA-N oxorhenium Chemical compound [Re]=O DYIZHKNUQPHNJY-UHFFFAOYSA-N 0.000 claims description 4
- 229910003449 rhenium oxide Inorganic materials 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 229940124530 sulfonamide Drugs 0.000 claims description 4
- 150000003456 sulfonamides Chemical class 0.000 claims description 4
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 claims description 4
- 150000003457 sulfones Chemical class 0.000 claims description 4
- 150000003462 sulfoxides Chemical class 0.000 claims description 4
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 claims description 4
- 238000010894 electron beam technology Methods 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 125000004185 ester group Chemical group 0.000 claims 1
- 239000010410 layer Substances 0.000 description 161
- 239000000758 substrate Substances 0.000 description 9
- 238000004528 spin coating Methods 0.000 description 7
- 238000001771 vacuum deposition Methods 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 6
- 238000002207 thermal evaporation Methods 0.000 description 4
- DIVZFUBWFAOMCW-UHFFFAOYSA-N 4-n-(3-methylphenyl)-1-n,1-n-bis[4-(n-(3-methylphenyl)anilino)phenyl]-4-n-phenylbenzene-1,4-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 DIVZFUBWFAOMCW-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000007641 inkjet printing Methods 0.000 description 3
- 239000012044 organic layer Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 3
- 229910001203 Alloy 20 Inorganic materials 0.000 description 2
- 229910019015 Mg-Ag Inorganic materials 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 239000010405 anode material Substances 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000010345 tape casting Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- GEQBRULPNIVQPP-UHFFFAOYSA-N 2-[3,5-bis(1-phenylbenzimidazol-2-yl)phenyl]-1-phenylbenzimidazole Chemical compound C1=CC=CC=C1N1C2=CC=CC=C2N=C1C1=CC(C=2N(C3=CC=CC=C3N=2)C=2C=CC=CC=2)=CC(C=2N(C3=CC=CC=C3N=2)C=2C=CC=CC=2)=C1 GEQBRULPNIVQPP-UHFFFAOYSA-N 0.000 description 1
- OGGKVJMNFFSDEV-UHFFFAOYSA-N 3-methyl-n-[4-[4-(n-(3-methylphenyl)anilino)phenyl]phenyl]-n-phenylaniline Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 OGGKVJMNFFSDEV-UHFFFAOYSA-N 0.000 description 1
- AWXGSYPUMWKTBR-UHFFFAOYSA-N 4-carbazol-9-yl-n,n-bis(4-carbazol-9-ylphenyl)aniline Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(N(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 AWXGSYPUMWKTBR-UHFFFAOYSA-N 0.000 description 1
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000284156 Clerodendrum quadriloculare Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 101000837344 Homo sapiens T-cell leukemia translocation-altered gene protein Proteins 0.000 description 1
- 229910018068 Li 2 O Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 102100028692 T-cell leukemia translocation-altered gene protein Human genes 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- JHYLKGDXMUDNEO-UHFFFAOYSA-N [Mg].[In] Chemical compound [Mg].[In] JHYLKGDXMUDNEO-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 1
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Inorganic materials [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Inorganic materials [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 125000000547 substituted alkyl group Chemical group 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
- H10K50/155—Hole transporting layers comprising dopants
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
- H10K50/156—Hole transporting layers comprising a multilayered structure
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/30—Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
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- Engineering & Computer Science (AREA)
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- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
【解決手段】第1電極及び第2電極間に発光層を有する有機発光表示素子において、該第1電極と発光層との間に第1正孔注入層及び第2正孔注入層を備え、該第1正孔注入層と第2正孔注入層との間にP型ドーパントでドーピングされている電荷発生層を具備した有機発光表示素子である。これにより、第1正孔注入層及び第2正孔注入層を備え、該第1正孔注入層と第2正孔注入層との間に電荷発生層を形成することにより、素子の駆動電圧を低下させて効率及び寿命特性を改善させることができる。
【選択図】図2
Description
アノードは、コーニング(Corning社製)の15Ω/cm2(120nm)ITOガラス基板を50mmx50mmx0.7mmサイズに切り、イソプロピルアルコールと純水との中で、それぞれ5分間超音波洗浄した後、30分間UV、オゾンでもってクリーニングして使用した。
電荷発生層の厚さを5nmとしたことを除いては、実施例1と同一にして有機発光表示素子を製造した。
電荷発生層の厚さを8nmとしたことを除いては、実施例1と同一にして有機発光表示素子を製造した。
アノードは、コーニング(corning社製)の15Ω/cm2(120nm)ITOガラス基板を50mmx50mmx0.7mmサイズに切り、イソプロピルアルコールと純水との中で、それぞれ5分間超音波洗浄した後、30分間UV、オゾンのクリーニングを行って使用した。
Claims (17)
- 第1電極及び第2電極間に発光層を有する有機発光表示素子において、
前記第1電極と発光層との間に第1正孔注入層及び第2正孔注入層を備え、前記第1正孔注入層と第2正孔注入層との間にP型ドーパントでドーピングされている電荷発生層を具備したことを特徴とする有機発光表示素子。 - 前記P型ドーパントは、ヘキサニトリルヘキサアザトリフェニレン、テトラフルオロ−テトラシアノキノジメタン(F4−TCNQ)、FeCl3、F16CuPc及び金属酸化物のうちから選択された一つであることを特徴とする請求項1に記載の有機発光表示素子。
- 前記金属酸化物は、酸化バナジウム(V2O5)、酸化レニウム(Re2O7)及びインジウムスズ酸化物(ITO)のうちから選択された一つであることを特徴とする請求項3に記載の有機発光表示素子。
- 前記P型ドーパントは、電荷発生層のLUMOエネルギーレベルと、前記第1正孔注入層または第2正孔注入層物質のHOMOエネルギーレベルとの差が−2ないし+2eV範囲内のエネルギー準位を有する物質であることを特徴とする請求項1に記載の有機発光表示素子。
- 前記電荷発生層は、各画素領域に共通層として形成されることを特徴とする請求項1に記載の有機発光表示素子。
- 前記電荷発生層は、厚さが1ないし20nmであることを特徴とする請求項1に記載の有機発光表示素子。
- 前記電荷発生層の厚さが2ないし8nmであることを特徴とする請求項1に記載の有機発光表示素子。
- 前記第1電極と発光層との間に正孔輸送層をさらに具備し、前記発光層と第2電極との間に正孔阻止層、電子輸送層、及び電子注入層のうちから選択された一層以上がさらに備わることを特徴とする請求項1に記載の有機発光表示素子。
- 第1電極及び第2電極間に発光層を有する有機発光表示素子において、
前記第1電極の上部に第1正孔注入層を積層する段階と、
前記第1正孔注入層の上部にP型ドーパントでドーピングされている電荷発生層を積層する段階と、
前記電荷発生層の上部に第2正孔注入層を積層する段階とを含むことを特徴とする有機発光表示素子の製造方法。 - 前記P型ドーパントは、ヘキサニトリルヘキサアザトリフェニレン、テトラフルオロ−テトラシアノキノジメタン(F4−TCNQ)、FeCl3、F16CuPc及び金属酸化物のうちから選択された一つからなることを特徴とする請求項10に記載の有機発光表示素子の製造方法。
- 前記金属酸化物は、酸化バナジウム(V2O5)、酸化レニウム(Re2O7)及びインジウムスズ酸化物(ITO)であることを特徴とすることを特徴とする請求項12に記載の有機発光表示素子の製造方法。
- 前記P型ドーパントは、電荷発生層のLUMOエネルギーレベルと、前記第1正孔注入層または第2正孔注入層物質のHOMOエネルギーレベルとの差が−2ないし+2eV範囲内のエネルギー準位を有する物質を使用することを特徴とする請求項10に記載の有機発光表示素子の製造方法。
- 前記電荷発生層は、抵抗加熱気相蒸着法、電子ビーム気相蒸着法、レーザビーム気相蒸着法、及びスパッタリング法のうちから選択された一つの方法により製造されることを特徴とする請求項10に記載の有機発光表示素子の製造方法。
- 前記電荷発生層は、厚さが1ないし20nmであることを特徴とする請求項10に記載の有機発光表示素子の製造方法。
- 前記第1電極と発光層との間に正孔輸送層をさらに具備し、前記発光層と第2電極との間に正孔阻止層、電子輸送層、及び電子注入層のうちから選択された一層以上がさらに備わることを特徴とする請求項10に記載の有機発光表示素子の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR1020050126101A KR100741098B1 (ko) | 2005-12-20 | 2005-12-20 | 유기 발광 표시 소자 및 이의 제조방법 |
KR1020050129922A KR100752383B1 (ko) | 2005-12-26 | 2005-12-26 | 유기전계발광소자 및 그 제조방법 |
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JP2007173780A true JP2007173780A (ja) | 2007-07-05 |
JP4673279B2 JP4673279B2 (ja) | 2011-04-20 |
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US (1) | US20070141396A1 (ja) |
EP (1) | EP1801882B1 (ja) |
JP (1) | JP4673279B2 (ja) |
Cited By (11)
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Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000150152A (ja) * | 1998-11-16 | 2000-05-30 | Toyo Ink Mfg Co Ltd | 有機エレクトロルミネッセンス表示装置 |
JP2000196140A (ja) * | 1998-12-28 | 2000-07-14 | Sharp Corp | 有機エレクトロルミネッセンス素子とその製造法 |
JP2004214201A (ja) * | 2002-12-31 | 2004-07-29 | Eastman Kodak Co | 高効率電場発光デバイス |
WO2004105447A1 (en) * | 2003-05-23 | 2004-12-02 | Lg Chem, Ltd. | Ito film treated by nitrogen plasma and the organic luminescent device using the same |
JP2005166641A (ja) * | 2003-11-13 | 2005-06-23 | International Manufacturing & Engineering Services Co Ltd | 有機エレクトロルミネッセント素子 |
WO2005064994A1 (ja) * | 2003-12-25 | 2005-07-14 | Fujitsu Limited | 有機el素子、有機el表示装置、有機el素子の製造方法および有機el素子の製造装置 |
JP2005293992A (ja) * | 2004-03-31 | 2005-10-20 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセンス素子の製造方法 |
JP2006049394A (ja) * | 2004-07-30 | 2006-02-16 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセント素子及び有機エレクトロルミネッセント表示装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3031356B1 (ja) * | 1998-10-05 | 2000-04-10 | 日本電気株式会社 | 有機elパネル及びその製造方法 |
US6730929B2 (en) * | 1999-12-24 | 2004-05-04 | Matsushita Electric Industrial Co., Ltd. | Organic electroluminescent device |
JP4090874B2 (ja) * | 2000-10-05 | 2008-05-28 | 新日鐵化学株式会社 | 有機電界発光素子 |
JP2002134276A (ja) * | 2000-10-30 | 2002-05-10 | Sony Corp | 有機電界発光素子 |
US6956240B2 (en) * | 2001-10-30 | 2005-10-18 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
KR100596028B1 (ko) * | 2001-11-12 | 2006-07-03 | 네오뷰코오롱 주식회사 | 고효율 유기 전계발광 소자 |
JP3933591B2 (ja) * | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
WO2004091262A1 (ja) * | 2003-04-02 | 2004-10-21 | Fujitsu Limited | 有機エレクトロルミネッセンス素子及び有機エレクトロルミネッセンスディスプレイ |
US7029765B2 (en) * | 2003-04-22 | 2006-04-18 | Universal Display Corporation | Organic light emitting devices having reduced pixel shrinkage |
JP4683829B2 (ja) * | 2003-10-17 | 2011-05-18 | 淳二 城戸 | 有機エレクトロルミネッセント素子及びその製造方法 |
JP4243237B2 (ja) * | 2003-11-10 | 2009-03-25 | 淳二 城戸 | 有機素子、有機el素子、有機太陽電池、及び、有機fet構造、並びに、有機素子の製造方法 |
JP5167571B2 (ja) * | 2004-02-18 | 2013-03-21 | ソニー株式会社 | 表示素子 |
JP4175273B2 (ja) * | 2004-03-03 | 2008-11-05 | セイコーエプソン株式会社 | 積層型有機エレクトロルミネッセンス素子の製造方法及び表示装置 |
KR100573154B1 (ko) * | 2004-06-26 | 2006-04-24 | 삼성에스디아이 주식회사 | 전계 발광 디스플레이 장치 및 이의 제조 방법 |
US7563518B2 (en) * | 2005-07-28 | 2009-07-21 | Eastman Kodak Company | Low voltage organic electroluminescent element |
-
2006
- 2006-10-30 JP JP2006294797A patent/JP4673279B2/ja active Active
- 2006-11-13 US US11/599,132 patent/US20070141396A1/en not_active Abandoned
- 2006-12-20 EP EP06256466.1A patent/EP1801882B1/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000150152A (ja) * | 1998-11-16 | 2000-05-30 | Toyo Ink Mfg Co Ltd | 有機エレクトロルミネッセンス表示装置 |
JP2000196140A (ja) * | 1998-12-28 | 2000-07-14 | Sharp Corp | 有機エレクトロルミネッセンス素子とその製造法 |
JP2004214201A (ja) * | 2002-12-31 | 2004-07-29 | Eastman Kodak Co | 高効率電場発光デバイス |
WO2004105447A1 (en) * | 2003-05-23 | 2004-12-02 | Lg Chem, Ltd. | Ito film treated by nitrogen plasma and the organic luminescent device using the same |
JP2005166641A (ja) * | 2003-11-13 | 2005-06-23 | International Manufacturing & Engineering Services Co Ltd | 有機エレクトロルミネッセント素子 |
WO2005064994A1 (ja) * | 2003-12-25 | 2005-07-14 | Fujitsu Limited | 有機el素子、有機el表示装置、有機el素子の製造方法および有機el素子の製造装置 |
JP2005293992A (ja) * | 2004-03-31 | 2005-10-20 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセンス素子の製造方法 |
JP2006049394A (ja) * | 2004-07-30 | 2006-02-16 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセント素子及び有機エレクトロルミネッセント表示装置 |
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US8497500B2 (en) | 2008-05-13 | 2013-07-30 | Sharp Kabushiki Kaisha | Organic EL device |
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JP2009283787A (ja) * | 2008-05-23 | 2009-12-03 | Rohm Co Ltd | 有機el素子 |
WO2010058737A1 (ja) * | 2008-11-19 | 2010-05-27 | ソニー株式会社 | 有機電界発光素子および表示装置 |
JP2010123704A (ja) * | 2008-11-19 | 2010-06-03 | Sony Corp | 有機電界発光素子および表示装置 |
JP2011187959A (ja) * | 2010-03-08 | 2011-09-22 | Samsung Mobile Display Co Ltd | 有機発光素子及びその製造方法 |
US9472767B2 (en) | 2010-03-08 | 2016-10-18 | Samsung Display Co., Ltd. | Organic light-emitting device and method of manufacturing the same |
JP2016048787A (ja) * | 2010-03-08 | 2016-04-07 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | 有機発光素子及びその製造方法 |
US9368744B2 (en) | 2010-04-01 | 2016-06-14 | Samsung Display Co., Ltd. | Organic light emitting diode device including multiple hole injection layers |
JP2011216861A (ja) * | 2010-04-01 | 2011-10-27 | Samsung Mobile Display Co Ltd | 有機発光ダイオード装置 |
JP2011243967A (ja) * | 2010-04-20 | 2011-12-01 | Sumitomo Chemical Co Ltd | 有機発光素子 |
WO2011132698A1 (ja) * | 2010-04-20 | 2011-10-27 | 住友化学株式会社 | 有機発光素子 |
KR20120140034A (ko) * | 2011-06-20 | 2012-12-28 | 삼성디스플레이 주식회사 | 카보레인 화합물, 이를 포함한 유기 전계 발광 소자 및 상기 유기 전계 발광 소자를 포함하는 평판 표시 장치 |
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KR20130010133A (ko) * | 2011-06-22 | 2013-01-28 | 삼성디스플레이 주식회사 | 헤테로고리 화합물, 이를 포함하는 유기 발광 소자 및 평판 표시 장치 |
KR101881081B1 (ko) * | 2011-06-22 | 2018-08-20 | 삼성디스플레이 주식회사 | 헤테로고리 화합물, 이를 포함하는 유기 발광 소자 및 평판 표시 장치 |
KR20140032628A (ko) * | 2012-09-07 | 2014-03-17 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 이의 제조 방법 |
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JPWO2021144892A1 (ja) * | 2020-01-15 | 2021-07-22 | ||
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JP7316385B2 (ja) | 2020-01-15 | 2023-07-27 | シャープ株式会社 | 発光素子、発光デバイス |
Also Published As
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US20070141396A1 (en) | 2007-06-21 |
EP1801882B1 (en) | 2016-07-20 |
EP1801882A2 (en) | 2007-06-27 |
EP1801882A3 (en) | 2012-08-01 |
JP4673279B2 (ja) | 2011-04-20 |
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