JP2012238613A - 有機発光素子 - Google Patents
有機発光素子 Download PDFInfo
- Publication number
- JP2012238613A JP2012238613A JP2012176107A JP2012176107A JP2012238613A JP 2012238613 A JP2012238613 A JP 2012238613A JP 2012176107 A JP2012176107 A JP 2012176107A JP 2012176107 A JP2012176107 A JP 2012176107A JP 2012238613 A JP2012238613 A JP 2012238613A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- light emitting
- organic light
- emitting device
- injection layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 37
- 239000002184 metal Substances 0.000 claims abstract description 37
- 239000012044 organic layer Substances 0.000 claims abstract description 23
- 239000010410 layer Substances 0.000 claims description 153
- 238000002347 injection Methods 0.000 claims description 98
- 239000007924 injection Substances 0.000 claims description 98
- 239000000463 material Substances 0.000 claims description 39
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- DKHNGUNXLDCATP-UHFFFAOYSA-N dipyrazino[2,3-f:2',3'-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile Chemical compound C12=NC(C#N)=C(C#N)N=C2C2=NC(C#N)=C(C#N)N=C2C2=C1N=C(C#N)C(C#N)=N2 DKHNGUNXLDCATP-UHFFFAOYSA-N 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 claims 3
- 230000005525 hole transport Effects 0.000 description 23
- 238000000034 method Methods 0.000 description 17
- 239000002019 doping agent Substances 0.000 description 12
- 238000004528 spin coating Methods 0.000 description 12
- 239000000758 substrate Substances 0.000 description 10
- 238000001771 vacuum deposition Methods 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 8
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 7
- 230000000903 blocking effect Effects 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- -1 phenyl-m-tolyl-amino Chemical group 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 3
- SPDPTFAJSFKAMT-UHFFFAOYSA-N 1-n-[4-[4-(n-[4-(3-methyl-n-(3-methylphenyl)anilino)phenyl]anilino)phenyl]phenyl]-4-n,4-n-bis(3-methylphenyl)-1-n-phenylbenzene-1,4-diamine Chemical compound CC1=CC=CC(N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=C(C)C=CC=2)C=2C=C(C)C=CC=2)C=2C=C(C)C=CC=2)=C1 SPDPTFAJSFKAMT-UHFFFAOYSA-N 0.000 description 2
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 description 2
- MBPCKEZNJVJYTC-UHFFFAOYSA-N 4-[4-(n-phenylanilino)phenyl]aniline Chemical compound C1=CC(N)=CC=C1C1=CC=C(N(C=2C=CC=CC=2)C=2C=CC=CC=2)C=C1 MBPCKEZNJVJYTC-UHFFFAOYSA-N 0.000 description 2
- VIZUPBYFLORCRA-UHFFFAOYSA-N 9,10-dinaphthalen-2-ylanthracene Chemical compound C12=CC=CC=C2C(C2=CC3=CC=CC=C3C=C2)=C(C=CC=C2)C2=C1C1=CC=C(C=CC=C2)C2=C1 VIZUPBYFLORCRA-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- GQVWHWAWLPCBHB-UHFFFAOYSA-L beryllium;benzo[h]quinolin-10-olate Chemical compound [Be+2].C1=CC=NC2=C3C([O-])=CC=CC3=CC=C21.C1=CC=NC2=C3C([O-])=CC=CC3=CC=C21 GQVWHWAWLPCBHB-UHFFFAOYSA-L 0.000 description 2
- UFVXQDWNSAGPHN-UHFFFAOYSA-K bis[(2-methylquinolin-8-yl)oxy]-(4-phenylphenoxy)alumane Chemical compound [Al+3].C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC([O-])=CC=C1C1=CC=CC=C1 UFVXQDWNSAGPHN-UHFFFAOYSA-K 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 2
- PHEDXBVPIONUQT-RGYGYFBISA-N phorbol 13-acetate 12-myristate Chemical compound C([C@]1(O)C(=O)C(C)=C[C@H]1[C@@]1(O)[C@H](C)[C@H]2OC(=O)CCCCCCCCCCCCC)C(CO)=C[C@H]1[C@H]1[C@]2(OC(C)=O)C1(C)C PHEDXBVPIONUQT-RGYGYFBISA-N 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- IWZZBBJTIUYDPZ-DVACKJPTSA-N (z)-4-hydroxypent-3-en-2-one;iridium;2-phenylpyridine Chemical compound [Ir].C\C(O)=C\C(C)=O.[C-]1=CC=CC=C1C1=CC=CC=N1.[C-]1=CC=CC=C1C1=CC=CC=N1 IWZZBBJTIUYDPZ-DVACKJPTSA-N 0.000 description 1
- KETXQNLMOUVTQB-UHFFFAOYSA-N 2,3,7,8,12,13,17,18-octaethylporphyrin;platinum Chemical compound [Pt].C=1C(C(=C2CC)CC)=NC2=CC(C(=C2CC)CC)=NC2=CC(C(=C2CC)CC)=NC2=CC2=NC=1C(CC)=C2CC KETXQNLMOUVTQB-UHFFFAOYSA-N 0.000 description 1
- BFTIPCRZWILUIY-UHFFFAOYSA-N 2,5,8,11-tetratert-butylperylene Chemical group CC(C)(C)C1=CC(C2=CC(C(C)(C)C)=CC=3C2=C2C=C(C=3)C(C)(C)C)=C3C2=CC(C(C)(C)C)=CC3=C1 BFTIPCRZWILUIY-UHFFFAOYSA-N 0.000 description 1
- VQGHOUODWALEFC-UHFFFAOYSA-N 2-phenylpyridine Chemical compound C1=CC=CC=C1C1=CC=CC=N1 VQGHOUODWALEFC-UHFFFAOYSA-N 0.000 description 1
- OGGKVJMNFFSDEV-UHFFFAOYSA-N 3-methyl-n-[4-[4-(n-(3-methylphenyl)anilino)phenyl]phenyl]-n-phenylaniline Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 OGGKVJMNFFSDEV-UHFFFAOYSA-N 0.000 description 1
- HXWWMGJBPGRWRS-CMDGGOBGSA-N 4- -2-tert-butyl-6- -4h-pyran Chemical compound O1C(C(C)(C)C)=CC(=C(C#N)C#N)C=C1\C=C\C1=CC(C(CCN2CCC3(C)C)(C)C)=C2C3=C1 HXWWMGJBPGRWRS-CMDGGOBGSA-N 0.000 description 1
- OSQXTXTYKAEHQV-WXUKJITCSA-N 4-methyl-n-[4-[(e)-2-[4-[4-[(e)-2-[4-(4-methyl-n-(4-methylphenyl)anilino)phenyl]ethenyl]phenyl]phenyl]ethenyl]phenyl]-n-(4-methylphenyl)aniline Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(\C=C\C=2C=CC(=CC=2)C=2C=CC(\C=C\C=3C=CC(=CC=3)N(C=3C=CC(C)=CC=3)C=3C=CC(C)=CC=3)=CC=2)=CC=1)C1=CC=C(C)C=C1 OSQXTXTYKAEHQV-WXUKJITCSA-N 0.000 description 1
- VIJYEGDOKCKUOL-UHFFFAOYSA-N 9-phenylcarbazole Chemical compound C1=CC=CC=C1N1C2=CC=CC=C2C2=CC=CC=C21 VIJYEGDOKCKUOL-UHFFFAOYSA-N 0.000 description 1
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910021593 Copper(I) fluoride Inorganic materials 0.000 description 1
- 229910018068 Li 2 O Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- JHYLKGDXMUDNEO-UHFFFAOYSA-N [Mg].[In] Chemical compound [Mg].[In] JHYLKGDXMUDNEO-UHFFFAOYSA-N 0.000 description 1
- CUJRVFIICFDLGR-UHFFFAOYSA-N acetylacetonate Chemical compound CC(=O)[CH-]C(C)=O CUJRVFIICFDLGR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229940027991 antiseptic and disinfectant quinoline derivative Drugs 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 125000000732 arylene group Chemical group 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Inorganic materials [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 150000001716 carbazoles Chemical class 0.000 description 1
- BMRUOURRLCCWHB-UHFFFAOYSA-M copper(i) fluoride Chemical compound [Cu]F BMRUOURRLCCWHB-UHFFFAOYSA-M 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- CECAIMUJVYQLKA-UHFFFAOYSA-N iridium 1-phenylisoquinoline Chemical compound [Ir].C1=CC=CC=C1C1=NC=CC2=CC=CC=C12.C1=CC=CC=C1C1=NC=CC2=CC=CC=C12.C1=CC=CC=C1C1=NC=CC2=CC=CC=C12 CECAIMUJVYQLKA-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Inorganic materials [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- YPJRZWDWVBNDIW-UHFFFAOYSA-N n,n-diphenyl-4-[2-[4-[4-[2-[4-(n-phenylanilino)phenyl]ethenyl]phenyl]phenyl]ethenyl]aniline Chemical group C=1C=C(N(C=2C=CC=CC=2)C=2C=CC=CC=2)C=CC=1C=CC(C=C1)=CC=C1C(C=C1)=CC=C1C=CC(C=C1)=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 YPJRZWDWVBNDIW-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 150000005041 phenanthrolines Chemical class 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 239000007774 positive electrode material Substances 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 150000003248 quinolines Chemical class 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229940042055 systemic antimycotics triazole derivative Drugs 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- JFLKFZNIIQFQBS-FNCQTZNRSA-N trans,trans-1,4-Diphenyl-1,3-butadiene Chemical group C=1C=CC=CC=1\C=C\C=C\C1=CC=CC=C1 JFLKFZNIIQFQBS-FNCQTZNRSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/40—Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/917—Electroluminescent
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
【解決手段】第1電極と、前記第1電極に対向する第2電極と、前記第1電極と前記第2電極との間に位置する有機層と、を備え、前記第1電極は、ITOの仕事関数の絶対値より小さい仕事関数の絶対値を有する金属を含む有機発光素子である。
【選択図】図2
Description
AMOLED)に備えられうる。特に、薄膜トランジスタを含むアクティブマトリックス有機発光表示装置に備えられる場合、基板側に備えられた第1電極は画素電極として機能し、薄膜トランジスタのソース電極またはドレイン電極と電気的に連結されうる。
コーニング(Corning)社製の15Ωcm2(1200Å)のITOガラス基板を50mm×50mm×0.6mmのサイズに切断し、イソプロピルアルコールと純水とを利用して各30分間超音波洗浄した後、4時間熱処理することにより、アノードを作製した。その後、真空蒸着装置内に前記アノードを設置した。下記の層はすべて、真空を維持した状態で、熱蒸着により連続的に成膜された。
正極としてITOを70Åの厚さで形成した。
実施例1及び比較例1で得られた有機発光素子について、電流−電圧特性、発光効率及び半減寿命を測定した。半減寿命は直流(DC)50mA/cm2の同一電流密度の印加時に、素子の輝度が初期値の50%まで減少する時間として評価した。
Claims (11)
- 第1電極と、
前記第1電極に対向する第2電極と、
前記第1電極と前記第2電極との間に位置し、正孔注入層を備える有機層と、
を備え、
前記第1電極は金属を含み、
前記金属の仕事関数の絶対値はITOの仕事関数の絶対値より小さく、
前記正孔注入層の厚さは、50Å〜100Åであることを特徴とする、有機発光素子。 - 前記金属は、銀(Ag)、アルミニウム(Al)またはこれらの合金であることを特徴とする、請求項1に記載の有機発光素子。
- 前記正孔注入層のLUMOのエネルギー準位の絶対値が前記金属の仕事関数の絶対値より大きいことを特徴とする、請求項1または2に記載の有機発光素子。
- 前記正孔注入層は非酸化物系物質を含み、
前記非酸化物系物質のLUMOのエネルギー準位の絶対値が前記金属の仕事関数の絶対値より大きいことを特徴とする、請求項1〜3のいずれか1項に記載の有機発光素子。 - 前記正孔注入層は酸化物系物質を含み、
前記酸化物系物質のLUMOのエネルギー準位の絶対値が前記金属の仕事関数の絶対値より大きいことを特徴とする、請求項1〜4のいずれか1項に記載の有機発光素子。 - 前記正孔注入層は、1,4,5,8,9,12−ヘキサアザ−トリフェニレン−2,3,6,7,10,11−ヘキサカルボニトリル、ヘキサデカフルオロ銅フタロシアニン、MoOx(xは2〜6である)、WxOy(xは1〜18であり、yは2〜49である)またはこれらの混合物を含むことを特徴とする、請求項1〜5のいずれか1項に記載の有機発光素子。
- 前記正孔注入層は、前記第1電極と接触していることを特徴とする、請求項1〜6のいずれか1項に記載の有機発光素子。
- 前記正孔注入層と接触している前記第1電極の部位が酸化されていないことを特徴とする、請求項7に記載の有機発光素子。
- 前記有機層の厚さは、800Å〜1500Åであることを特徴とする請求項1〜8のいずれか1項に記載の有機発光素子。
- 前記第1電極は正極であり、前記第2電極は負極であることを特徴とする、請求項1〜9のいずれか1項に記載の有機発光素子。
- 前記第1電極の厚さは、200Å〜5000Åであることを特徴とする、請求項1〜10のいずれか1項に記載の有機発光素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2010-0028080 | 2010-03-29 | ||
KR1020100028080A KR101647134B1 (ko) | 2010-03-29 | 2010-03-29 | 유기 발광 소자 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011015523A Division JP2011210703A (ja) | 2010-03-29 | 2011-01-27 | 有機発光素子 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2012238613A true JP2012238613A (ja) | 2012-12-06 |
Family
ID=44655319
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011015523A Pending JP2011210703A (ja) | 2010-03-29 | 2011-01-27 | 有機発光素子 |
JP2012176107A Pending JP2012238613A (ja) | 2010-03-29 | 2012-08-08 | 有機発光素子 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011015523A Pending JP2011210703A (ja) | 2010-03-29 | 2011-01-27 | 有機発光素子 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9159947B2 (ja) |
JP (2) | JP2011210703A (ja) |
KR (1) | KR101647134B1 (ja) |
CN (1) | CN102208430B (ja) |
DE (1) | DE102011006287B4 (ja) |
TW (1) | TWI473315B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104051632A (zh) * | 2013-03-11 | 2014-09-17 | 海洋王照明科技股份有限公司 | 有机电致发光器件及其制备方法 |
JP6128020B2 (ja) * | 2013-04-10 | 2017-05-17 | ソニー株式会社 | 電子デバイス及び固体撮像装置、並びに、電子デバイスにおける電極形成方法 |
WO2016013533A1 (ja) | 2014-07-23 | 2016-01-28 | 日産化学工業株式会社 | 電荷輸送性材料 |
KR101733151B1 (ko) | 2014-08-21 | 2017-05-08 | 삼성디스플레이 주식회사 | 유기 발광 소자 및 이를 포함하는 유기 발광 표시 장치 |
KR102430339B1 (ko) * | 2014-11-27 | 2022-08-08 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009087782A (ja) * | 2007-09-28 | 2009-04-23 | Dainippon Printing Co Ltd | エレクトロルミネッセンス素子の製造方法 |
WO2009097108A1 (en) * | 2008-01-30 | 2009-08-06 | Eastman Kodak Company | Phosphorescent oled having double hole-blocking layers |
JP2009283787A (ja) * | 2008-05-23 | 2009-12-03 | Rohm Co Ltd | 有機el素子 |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5714838A (en) | 1996-09-20 | 1998-02-03 | International Business Machines Corporation | Optically transparent diffusion barrier and top electrode in organic light emitting diode structures |
US6278236B1 (en) * | 1999-09-02 | 2001-08-21 | Eastman Kodak Company | Organic electroluminescent devices with electron-injecting layer having aluminum and alkali halide |
KR100377321B1 (ko) * | 1999-12-31 | 2003-03-26 | 주식회사 엘지화학 | 피-형 반도체 성질을 갖는 유기 화합물을 포함하는 전기소자 |
US7560175B2 (en) | 1999-12-31 | 2009-07-14 | Lg Chem, Ltd. | Electroluminescent devices with low work function anode |
KR100721656B1 (ko) * | 2005-11-01 | 2007-05-23 | 주식회사 엘지화학 | 유기 전기 소자 |
KR100477746B1 (ko) | 2002-06-22 | 2005-03-18 | 삼성에스디아이 주식회사 | 다층 구조의 애노드를 채용한 유기 전계 발광 소자 |
US20060014044A1 (en) * | 2004-07-14 | 2006-01-19 | Au Optronics Corporation | Organic light-emitting display with multiple light-emitting modules |
KR20060012120A (ko) | 2004-08-02 | 2006-02-07 | 최명운 | 전기 쌍극자 효과를 주는 무기물 층이 삽입된 유기 발광소자 |
JPWO2006104256A1 (ja) * | 2005-03-31 | 2008-09-11 | パイオニア株式会社 | 有機el素子及びその製造方法 |
US20060240280A1 (en) | 2005-04-21 | 2006-10-26 | Eastman Kodak Company | OLED anode modification layer |
US7687986B2 (en) * | 2005-05-27 | 2010-03-30 | Fujifilm Corporation | Organic EL device having hole-injection layer doped with metallic oxide |
TWI280269B (en) | 2005-07-15 | 2007-05-01 | Grace Semiconductor Mfg Corp | Organic light-emitting material and light-emitting device |
US20090015150A1 (en) * | 2005-07-15 | 2009-01-15 | Lg Chem, Ltd. | Organic light emitting device and method for manufacturing the same |
CN1988207A (zh) | 2005-12-23 | 2007-06-27 | 上海广电电子股份有限公司 | 一种有机发光器件金属阳极的处理方法 |
KR100741104B1 (ko) | 2005-12-30 | 2007-07-20 | 삼성에스디아이 주식회사 | 유기 발광 소자 |
TWI277367B (en) * | 2006-03-03 | 2007-03-21 | Au Optronics Corp | Hole injection structure of organic electroluminescence device and method for manufacturing the same |
KR100787461B1 (ko) | 2006-11-10 | 2007-12-26 | 삼성에스디아이 주식회사 | 다층 구조의 애노드를 채용한 유기 발광 디스플레이 장치 |
WO2008075615A1 (en) * | 2006-12-21 | 2008-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element and light-emitting device |
WO2008149828A1 (en) * | 2007-06-05 | 2008-12-11 | Semiconductor Energy Laboratory Co., Ltd. | Organometallic complex, and light-emitting materia light-emitting element, light-emitting device and electronic device |
CN100521847C (zh) | 2007-07-19 | 2009-07-29 | 中国科学院长春应用化学研究所 | 顶发射结构彩色有机电致发光器件及其制备方法 |
US20090091242A1 (en) * | 2007-10-05 | 2009-04-09 | Liang-Sheng Liao | Hole-injecting layer in oleds |
CN101919310A (zh) * | 2008-01-18 | 2010-12-15 | Lg化学株式会社 | 有机发光器件及其制备方法 |
CN101222027B (zh) | 2008-01-29 | 2010-09-08 | 清华大学 | 一种有机发光器件及其制备方法 |
JP4842289B2 (ja) * | 2008-02-28 | 2011-12-21 | 独立行政法人科学技術振興機構 | ホール注入電極と該電極を用いた有機el素子 |
KR100922760B1 (ko) * | 2008-03-03 | 2009-10-21 | 삼성모바일디스플레이주식회사 | 유기 발광 소자 |
JP2009277791A (ja) | 2008-05-13 | 2009-11-26 | Fuji Electric Holdings Co Ltd | 有機el素子 |
JP5491068B2 (ja) | 2008-05-16 | 2014-05-14 | 株式会社半導体エネルギー研究所 | 有機化合物、ベンゾオキサゾール誘導体、およびベンゾオキサゾール誘導体を用いた発光素子、発光装置、照明装置、並びに電子機器 |
KR100975867B1 (ko) * | 2008-06-19 | 2010-08-13 | 삼성모바일디스플레이주식회사 | 유기 발광 표시장치 |
CN101383400A (zh) | 2008-10-07 | 2009-03-11 | 中国科学院长春应用化学研究所 | 用高电导率空穴传输材料作为空穴传输层的有机电致发光器件 |
CN101447555B (zh) | 2008-12-29 | 2012-01-25 | 中国科学院长春应用化学研究所 | 基于有机半导体异质结电荷产生层作为连接层的叠层有机电致发光器件及制法 |
KR101007116B1 (ko) | 2010-02-19 | 2011-01-10 | 엘지이노텍 주식회사 | 발광 장치 |
KR101097336B1 (ko) * | 2010-02-26 | 2011-12-23 | 삼성모바일디스플레이주식회사 | 전면발광형 유기 발광 소자 |
-
2010
- 2010-03-29 KR KR1020100028080A patent/KR101647134B1/ko active IP Right Grant
-
2011
- 2011-01-27 JP JP2011015523A patent/JP2011210703A/ja active Pending
- 2011-03-02 US US13/064,016 patent/US9159947B2/en active Active
- 2011-03-04 TW TW100107466A patent/TWI473315B/zh active
- 2011-03-08 CN CN201110058208.5A patent/CN102208430B/zh active Active
- 2011-03-29 DE DE102011006287.4A patent/DE102011006287B4/de active Active
-
2012
- 2012-08-08 JP JP2012176107A patent/JP2012238613A/ja active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009087782A (ja) * | 2007-09-28 | 2009-04-23 | Dainippon Printing Co Ltd | エレクトロルミネッセンス素子の製造方法 |
WO2009097108A1 (en) * | 2008-01-30 | 2009-08-06 | Eastman Kodak Company | Phosphorescent oled having double hole-blocking layers |
JP2009283787A (ja) * | 2008-05-23 | 2009-12-03 | Rohm Co Ltd | 有機el素子 |
Also Published As
Publication number | Publication date |
---|---|
DE102011006287A1 (de) | 2012-01-05 |
TWI473315B (zh) | 2015-02-11 |
CN102208430A (zh) | 2011-10-05 |
KR101647134B1 (ko) | 2016-08-10 |
US20110233531A1 (en) | 2011-09-29 |
DE102011006287B4 (de) | 2017-06-08 |
TW201212323A (en) | 2012-03-16 |
KR20110108720A (ko) | 2011-10-06 |
JP2011210703A (ja) | 2011-10-20 |
US9159947B2 (en) | 2015-10-13 |
CN102208430B (zh) | 2014-05-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5851683B2 (ja) | 有機発光素子及びその製造方法 | |
JP4903234B2 (ja) | 有機発光素子 | |
JP6359800B2 (ja) | 有機発光素子 | |
US7777408B2 (en) | Organic light-emitting device | |
JP4790565B2 (ja) | 有機電界発光表示素子およびその製造方法 | |
JP4903190B2 (ja) | 有機発光素子 | |
US20070141396A1 (en) | Organic luminescence display device and method of manufacturing the same | |
US7973467B2 (en) | Organic light emitting device | |
JP5259648B2 (ja) | 有機発光素子 | |
JP2009212514A (ja) | 有機発光素子 | |
JP2009164578A (ja) | 有機発光素子 | |
JP2011243979A (ja) | 有機発光素子 | |
US20140070178A1 (en) | Organic light-emitting device | |
JP2014187020A (ja) | 有機発光素子 | |
JP2006287218A (ja) | 有機発光素子及びその製造方法 | |
US10522778B2 (en) | Organic light-emitting diode including an electronic transport layer comprising a three component blend of a matrix compound and two lithium compounds | |
TW201448309A (zh) | 有機發光裝置及包含其之平板顯示裝置 | |
US8981351B2 (en) | Organic light-emitting device | |
JP2012238613A (ja) | 有機発光素子 | |
US20140117332A1 (en) | Organic light emitting device | |
CN114171694B (zh) | 显示面板及其制作方法 | |
KR101108156B1 (ko) | 백색 유기 발광 소자 | |
KR102206852B1 (ko) | 유기 발광 소자 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20120912 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121025 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130723 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130724 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130917 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20131029 |