JP2007173377A - 両面配線テープキャリア及びその製造方法 - Google Patents
両面配線テープキャリア及びその製造方法 Download PDFInfo
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- JP2007173377A JP2007173377A JP2005366535A JP2005366535A JP2007173377A JP 2007173377 A JP2007173377 A JP 2007173377A JP 2005366535 A JP2005366535 A JP 2005366535A JP 2005366535 A JP2005366535 A JP 2005366535A JP 2007173377 A JP2007173377 A JP 2007173377A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
- H01L2224/48228—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item the bond pad being disposed in a recess of the surface of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
【解決手段】複数の半導体チップ搭載部9tを有する長尺の両面配線テープキャリア1において、テープ幅方向両端部のスプロケットホールエリアの一方のCu箔層3のみを残存させたものである。
【選択図】図1
Description
本実施の形態の作用を説明する。
(反り量)=Max(A−D)−E
より反り量を測定した。反り量測定機器には、焦点顕微鏡を用いた。
グランド面:27μm
絶縁性フィルム厚 25μm
図4に示すように、Cu箔層3を両面全て除去した場合に最も反り量を小さくできることが分かるが、上述したように、テープ製造工程時に搬送不具合が発生してしまう。これに対し、片面一方のみCu箔層を除去した両面配線テープキャリア1では、Cu箔層3を両面全て除去した場合に比べれば若干反り量が大きいものの、Cu箔層3を両面残存させた場合に比べ、反り量が大幅に小さくなっていることが分かる。
2 絶縁性フィルム
3 Cu箔層
4 スプロケットホール
5 ビアホール
6 メッキ層
9 絶縁層
9t 半導体チップ搭載部
Claims (5)
- 複数の半導体チップ搭載部を有する長尺の両面配線テープキャリアにおいて、テープ幅方向両端部のスプロケットホールエリアの一方のCu箔層のみを残存させたことを特徴とする両面配線テープキャリア。
- 複数の半導体チップ搭載部を有する長尺の両面配線テープキャリアの製造方法において、テープ幅方向両端部のスプロケットホールエリアの一方のCu箔層のみを残存させることを特徴とする両面配線テープキャリアの製造方法。
- 両面にCu箔層を有する長尺の絶縁性フィルムにその絶縁性フィルムを貫通するビアホールを形成し、そのビアホールの壁面に導電性薄膜を形成し、その導電性膜上に両面のCu箔層を導通化するためのメッキ層を形成し、前記絶縁性フィルムの両面のCu箔層を同時あるいは逐次フォトエッチングして一面にCu配線パターンを形成する際に、テープ幅方向両端部のスプロケットホールエリアの一方のCu箔層上に樹脂等の塗布により保護膜を形成した後、他方のCu箔層のエッチングを行って保護膜に保護されたCu箔層のみを残存させる請求項2記載の両面配線テープキャリアの製造方法。
- 前記導電性膜は、Sn−Pdまたはその化合物、あるいはグラファイト、導電性カーボン、あるいはポリピロールの如き導電性ポリマの内から選ばれたものからなる請求項3記載の両面配線テープキャリアの製造方法。
- 前記メッキ層は、前記導電性薄膜上に酸性電解Cuメッキを直接施すことによって形成される請求項3または4記載の両面配線テープキャリアの製造方法。
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JP2005366535A JP4506666B2 (ja) | 2005-12-20 | 2005-12-20 | 両面配線テープキャリアの製造方法 |
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JP2005366535A JP4506666B2 (ja) | 2005-12-20 | 2005-12-20 | 両面配線テープキャリアの製造方法 |
Publications (2)
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JP2007173377A true JP2007173377A (ja) | 2007-07-05 |
JP4506666B2 JP4506666B2 (ja) | 2010-07-21 |
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JP2005366535A Expired - Fee Related JP4506666B2 (ja) | 2005-12-20 | 2005-12-20 | 両面配線テープキャリアの製造方法 |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54121251U (ja) * | 1978-02-15 | 1979-08-24 | ||
JPS62291125A (ja) * | 1986-06-11 | 1987-12-17 | Seiko Epson Corp | 回路基板製造方法 |
JPH0291956A (ja) * | 1988-09-29 | 1990-03-30 | Toshiba Corp | フィルムキャリヤ |
JPH04146637A (ja) * | 1990-10-08 | 1992-05-20 | Ibiden Co Ltd | フィルムキャリア |
JPH06236905A (ja) * | 1993-02-08 | 1994-08-23 | Furukawa Electric Co Ltd:The | テープキャリア |
-
2005
- 2005-12-20 JP JP2005366535A patent/JP4506666B2/ja not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54121251U (ja) * | 1978-02-15 | 1979-08-24 | ||
JPS62291125A (ja) * | 1986-06-11 | 1987-12-17 | Seiko Epson Corp | 回路基板製造方法 |
JPH0291956A (ja) * | 1988-09-29 | 1990-03-30 | Toshiba Corp | フィルムキャリヤ |
JPH04146637A (ja) * | 1990-10-08 | 1992-05-20 | Ibiden Co Ltd | フィルムキャリア |
JPH06236905A (ja) * | 1993-02-08 | 1994-08-23 | Furukawa Electric Co Ltd:The | テープキャリア |
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