JP2007150376A5 - - Google Patents

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Publication number
JP2007150376A5
JP2007150376A5 JP2007071854A JP2007071854A JP2007150376A5 JP 2007150376 A5 JP2007150376 A5 JP 2007150376A5 JP 2007071854 A JP2007071854 A JP 2007071854A JP 2007071854 A JP2007071854 A JP 2007071854A JP 2007150376 A5 JP2007150376 A5 JP 2007150376A5
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JP
Japan
Prior art keywords
recess
nitride semiconductor
light emitting
substrate
emitting device
Prior art date
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Granted
Application number
JP2007071854A
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English (en)
Japanese (ja)
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JP2007150376A (ja
JP4146881B2 (ja
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Priority to JP2007071854A priority Critical patent/JP4146881B2/ja
Priority claimed from JP2007071854A external-priority patent/JP4146881B2/ja
Publication of JP2007150376A publication Critical patent/JP2007150376A/ja
Publication of JP2007150376A5 publication Critical patent/JP2007150376A5/ja
Application granted granted Critical
Publication of JP4146881B2 publication Critical patent/JP4146881B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2007071854A 2007-03-20 2007-03-20 窒化物半導体発光素子およびエピウエハとその製造方法 Expired - Lifetime JP4146881B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007071854A JP4146881B2 (ja) 2007-03-20 2007-03-20 窒化物半導体発光素子およびエピウエハとその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007071854A JP4146881B2 (ja) 2007-03-20 2007-03-20 窒化物半導体発光素子およびエピウエハとその製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2001038228A Division JP4703014B2 (ja) 2001-02-15 2001-02-15 窒化物半導体発光素子、光学装置、および半導体発光装置とその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007227576A Division JP5074863B2 (ja) 2007-09-03 2007-09-03 窒化物半導体発光素子およびエピウエハとその製造方法

Publications (3)

Publication Number Publication Date
JP2007150376A JP2007150376A (ja) 2007-06-14
JP2007150376A5 true JP2007150376A5 (enExample) 2007-07-26
JP4146881B2 JP4146881B2 (ja) 2008-09-10

Family

ID=38211298

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007071854A Expired - Lifetime JP4146881B2 (ja) 2007-03-20 2007-03-20 窒化物半導体発光素子およびエピウエハとその製造方法

Country Status (1)

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JP (1) JP4146881B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2042044B1 (en) 2006-07-11 2012-03-21 Toyo Seikan Kaisha, Ltd. Sterilizing method and sterilizing apparatus for retorted product
JP5095842B2 (ja) * 2011-05-24 2012-12-12 株式会社東芝 半導体発光素子、窒化物半導体層成長用基板及び窒化物半導体ウェーハ
JP5864000B2 (ja) * 2015-01-29 2016-02-17 株式会社東芝 半導体発光素子、窒化物半導体層成長用基板及び窒化物半導体ウェーハ

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3240099B2 (ja) * 1995-02-24 2001-12-17 シャープ株式会社 半導体発光素子およびその製造方法
JP3752705B2 (ja) * 1995-07-14 2006-03-08 株式会社日立製作所 半導体レーザ素子の製造方法
JPH09307193A (ja) * 1996-05-20 1997-11-28 Nichia Chem Ind Ltd 窒化物半導体レーザ素子及びその製造方法
JPH10173294A (ja) * 1996-10-07 1998-06-26 Canon Inc 窒素を含む化合物半導体多層膜ミラー及びそれを用いた面型発光デバイス
JP4083866B2 (ja) * 1998-04-28 2008-04-30 シャープ株式会社 半導体レーザ素子
JP3727187B2 (ja) * 1998-07-03 2005-12-14 日亜化学工業株式会社 窒化物半導体レーザ素子の製造方法
KR100580307B1 (ko) * 1998-07-14 2006-05-16 후지쯔 가부시끼가이샤 반도체 레이저 및 반도체 장치
JP3592553B2 (ja) * 1998-10-15 2004-11-24 株式会社東芝 窒化ガリウム系半導体装置
JP4288743B2 (ja) * 1999-03-24 2009-07-01 日亜化学工業株式会社 窒化物半導体の成長方法
JP2000286506A (ja) * 1999-03-31 2000-10-13 Furukawa Electric Co Ltd:The ＧａＮ系発光素子
JP4646093B2 (ja) * 1999-09-09 2011-03-09 シャープ株式会社 窒化物半導体レーザ素子およびその製造方法
JP2001148544A (ja) * 1999-09-10 2001-05-29 Sharp Corp 半導体発光素子
JP2001267691A (ja) * 2000-01-13 2001-09-28 Sony Corp 半導体素子およびその製造方法
JP4623799B2 (ja) * 2000-06-23 2011-02-02 ローム株式会社 半導体発光素子の製法および半導体レーザ
JP4703014B2 (ja) * 2001-02-15 2011-06-15 シャープ株式会社 窒化物半導体発光素子、光学装置、および半導体発光装置とその製造方法

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