JP4146881B2 - 窒化物半導体発光素子およびエピウエハとその製造方法 - Google Patents

窒化物半導体発光素子およびエピウエハとその製造方法 Download PDF

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JP4146881B2
JP4146881B2 JP2007071854A JP2007071854A JP4146881B2 JP 4146881 B2 JP4146881 B2 JP 4146881B2 JP 2007071854 A JP2007071854 A JP 2007071854A JP 2007071854 A JP2007071854 A JP 2007071854A JP 4146881 B2 JP4146881 B2 JP 4146881B2
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nitride semiconductor
substrate
light emitting
recess
width
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JP2007150376A5 (enExample
JP2007150376A (ja
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有三 津田
大介 花岡
貴之 湯浅
茂稔 伊藤
元隆 種谷
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Sharp Corp
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Sharp Corp
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JP2007071854A 2007-03-20 2007-03-20 窒化物半導体発光素子およびエピウエハとその製造方法 Expired - Lifetime JP4146881B2 (ja)

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JP2007150376A5 JP2007150376A5 (enExample) 2007-07-26
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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2042044B1 (en) 2006-07-11 2012-03-21 Toyo Seikan Kaisha, Ltd. Sterilizing method and sterilizing apparatus for retorted product
JP5095842B2 (ja) * 2011-05-24 2012-12-12 株式会社東芝 半導体発光素子、窒化物半導体層成長用基板及び窒化物半導体ウェーハ
JP5864000B2 (ja) * 2015-01-29 2016-02-17 株式会社東芝 半導体発光素子、窒化物半導体層成長用基板及び窒化物半導体ウェーハ

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3240099B2 (ja) * 1995-02-24 2001-12-17 シャープ株式会社 半導体発光素子およびその製造方法
JP3752705B2 (ja) * 1995-07-14 2006-03-08 株式会社日立製作所 半導体レーザ素子の製造方法
JPH09307193A (ja) * 1996-05-20 1997-11-28 Nichia Chem Ind Ltd 窒化物半導体レーザ素子及びその製造方法
JPH10173294A (ja) * 1996-10-07 1998-06-26 Canon Inc 窒素を含む化合物半導体多層膜ミラー及びそれを用いた面型発光デバイス
JP4083866B2 (ja) * 1998-04-28 2008-04-30 シャープ株式会社 半導体レーザ素子
JP3727187B2 (ja) * 1998-07-03 2005-12-14 日亜化学工業株式会社 窒化物半導体レーザ素子の製造方法
KR100580307B1 (ko) * 1998-07-14 2006-05-16 후지쯔 가부시끼가이샤 반도체 레이저 및 반도체 장치
JP3592553B2 (ja) * 1998-10-15 2004-11-24 株式会社東芝 窒化ガリウム系半導体装置
JP4288743B2 (ja) * 1999-03-24 2009-07-01 日亜化学工業株式会社 窒化物半導体の成長方法
JP2000286506A (ja) * 1999-03-31 2000-10-13 Furukawa Electric Co Ltd:The ＧａＮ系発光素子
JP4646093B2 (ja) * 1999-09-09 2011-03-09 シャープ株式会社 窒化物半導体レーザ素子およびその製造方法
JP2001148544A (ja) * 1999-09-10 2001-05-29 Sharp Corp 半導体発光素子
JP2001267691A (ja) * 2000-01-13 2001-09-28 Sony Corp 半導体素子およびその製造方法
JP4623799B2 (ja) * 2000-06-23 2011-02-02 ローム株式会社 半導体発光素子の製法および半導体レーザ
JP4703014B2 (ja) * 2001-02-15 2011-06-15 シャープ株式会社 窒化物半導体発光素子、光学装置、および半導体発光装置とその製造方法

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