JP2007149790A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2007149790A JP2007149790A JP2005339467A JP2005339467A JP2007149790A JP 2007149790 A JP2007149790 A JP 2007149790A JP 2005339467 A JP2005339467 A JP 2005339467A JP 2005339467 A JP2005339467 A JP 2005339467A JP 2007149790 A JP2007149790 A JP 2007149790A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 124
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12004—Combinations of two or more optical elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7841—Field effect transistors with field effect produced by an insulated gate with floating body, e.g. programmable transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/20—DRAM devices comprising floating-body transistors, e.g. floating-body cells
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C2211/4016—Memory devices with silicon-on-insulator cells
Abstract
【解決手段】絶縁膜12,14に挟まれるシリコン層13に、光導波路(肉厚部)61が形成されている。受光素子70は、p型シリコン層15をチャネルボディとして、その表面にゲート絶縁膜71を介してゲート電極72が形成され、絶縁膜14に達する深さにソース拡散層73およびドレイン拡散層74が形成された、PDSOIトランジスタ(MOSトランジスタ)により構成されている。光導波路61を光が導波するとき、この光のTPA現象によるキャリアが生成し、PDSOIトランジスタのチャネルボディにホールが残存する。このホールの残存をPDSOIトランジスタで検知することで、光導波路61を導波する光を検知する。PDSOIトランジスタを通常のCMOSプロセスで安価に作製できる。
【選択図】 図18
Description
絶縁膜上に半導体層を有する基板を備え、
上記半導体層が所定の経路に沿って肉厚とされて形成された光導波路と、
上記光導波路の導波方向の所定箇所に対応し、該光導波路を導波する光の電界が存在する半導体層位置に形成されたフローティングのチャネルボディおよび該チャネルボディの表面側に形成されたチャネルを形成するためのゲートを持つMISFETを有する受光素子とを有する
ことを特徴とする半導体装置にある。
上述の図18、図29に示す受光素子70,70Aでは、この受光素子70,70Aを構成するPDSOIトランジスタのnpn構造が光導波路61の長手方向(光の導波方向)に現れるようにMOS構造を配置したものを示したが、このPDSOIトランジスタのnpn構造が光導波路61の長手方向と直交する方向に現れるようにMOS構造を配置してもよい。
Claims (8)
- 絶縁膜上に半導体層を有する基板を備え、
上記半導体層が所定の経路に沿って肉厚とされて形成された光導波路と、
上記光導波路の導波方向の所定箇所に対応し、該光導波路を導波する光の電界が存在する半導体層位置に形成されたフローティングのチャネルボディおよび該チャネルボディの表面側に形成されたチャネルを形成するためのゲートを持つMISFETを有する受光素子とを有する
ことを特徴とする半導体装置。 - 上記基板は、半導体基板上に、第1の絶縁膜、第1の半導体層、第2の絶縁膜および第2の半導体層がこの順に形成されたものであり、
上記光導波路は、上記第1の半導体層が所定の経路に沿って肉厚とされて形成され、
上記MISFETのチャネルボディは、上記第2の半導体層または上記第1の半導体層に形成される
ことを特徴とする請求項1に記載の半導体装置。 - 上記光導波路が存在する領域と他の領域とにおける上記第1の半導体層を分離する局所絶縁膜をさらに備える
ことを特徴とする請求項2に記載の半導体装置。 - 上記基板は、半導体基板上に、第1の絶縁膜および第2の半導体層がこの順に形成されたものであり、
上記光導波路は上記第1の半導体層が所定の経路に沿って肉厚とされて形成され、
上記MISFETのチャネルボディは、上記第1の半導体層に形成される
ことを特徴とする請求項1に記載の半導体装置。 - 上記基板は、半導体基板上に、第1の絶縁膜、第1の半導体層および第2の絶縁膜がこの順に形成されたものであり、
上記光導波路は上記第1の半導体層が所定の経路に沿って肉厚とされて形成され、
上記MISFETのチャネルボディは、上記第1の半導体層に形成される
ことを特徴とする請求項1に記載の半導体装置。 - 上記受光素子は、上記光導波路の導波方向に沿って並べて形成された複数個の上記MISFETが並列的に接続されて構成されている
ことを特徴とする請求項1に記載の半導体装置。 - 基板の絶縁膜上に有する半導体層が所定の経路に沿って肉厚とされて形成された光導波路を導波する光を、
上記光導波路の導波方向の所定箇所に対応し、該光導波路を導波する光の電界が存在する半導体層位置に形成されたフローティングのチャネルボディおよび該チャネルボディの表面側に形成されたチャネルを形成するためのゲートを持つMISFETにより構成される受光素子で検出する
ことを特徴とする光検出方法。 - 上記受光素子は、
上記チャネルボディに残存する多数キャリアを除去するクリア工程と、該クリア工程の後に、上記チャネルボディに所定期間だけ上記光導波路を導波する光に応じた多数キャリアを蓄積する取り込み工程と、該取り込み工程の後に、上記チャネルボディに蓄積されている多数キャリアを検出する検出工程とを1サイクルとして、上記光導波路を導波する光を検出する
ことを特徴とする請求項7に記載の光検出方法。
Priority Applications (2)
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JP2005339467A JP4604981B2 (ja) | 2005-11-24 | 2005-11-24 | 半導体装置と光検出方法 |
US11/562,519 US7592682B2 (en) | 2005-11-24 | 2006-11-22 | Optical waveguide and photoreceptor |
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JP2005339467A JP4604981B2 (ja) | 2005-11-24 | 2005-11-24 | 半導体装置と光検出方法 |
Publications (3)
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JP2007149790A true JP2007149790A (ja) | 2007-06-14 |
JP2007149790A5 JP2007149790A5 (ja) | 2009-01-08 |
JP4604981B2 JP4604981B2 (ja) | 2011-01-05 |
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JP (1) | JP4604981B2 (ja) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008096133A (ja) * | 2006-10-06 | 2008-04-24 | Sony Corp | 半導体装置および光検出方法 |
JP2009088488A (ja) * | 2007-09-11 | 2009-04-23 | Sony Corp | 記憶装置 |
JP2009212277A (ja) * | 2008-03-04 | 2009-09-17 | Sony Corp | 発振器および光検出回路 |
JP2009212279A (ja) * | 2008-03-04 | 2009-09-17 | Sony Corp | 半導体装置 |
JP2009212278A (ja) * | 2008-03-04 | 2009-09-17 | Sony Corp | 光検出回路 |
JP2010103536A (ja) * | 2008-10-21 | 2010-05-06 | Samsung Electronics Co Ltd | 半導体素子の動作方法 |
JP2011517061A (ja) * | 2008-03-13 | 2011-05-26 | エス.オー.アイ.テック シリコン オン インシュレータ テクノロジーズ | 絶縁埋め込み層に帯電領域を有する基板 |
JP2012008023A (ja) * | 2010-06-25 | 2012-01-12 | Panasonic Electric Works Co Ltd | 加速度センサ |
KR101792644B1 (ko) * | 2017-03-02 | 2017-11-02 | 울산과학기술원 | 고 이동도 트랜지스터 및 그의 제조 방법 |
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US8232586B2 (en) * | 2009-08-12 | 2012-07-31 | Globalfoundries Inc. | Silicon photon detector |
FR2953636B1 (fr) * | 2009-12-08 | 2012-02-10 | Soitec Silicon On Insulator | Procede de commande d'une cellule memoire dram sur seoi disposant d'une seconde grille de controle enterree sous la couche isolante |
CN101882623B (zh) * | 2010-06-29 | 2011-07-27 | 吉林大学 | 非易失性半导体光折变存储器结构 |
US8542058B2 (en) | 2011-01-03 | 2013-09-24 | International Business Machines Corporation | Semiconductor device including body connected FETs |
KR102114343B1 (ko) * | 2013-11-06 | 2020-05-22 | 삼성전자주식회사 | 센싱 픽셀 및 이를 포함하는 이미지 센서 |
US10133145B2 (en) * | 2015-01-22 | 2018-11-20 | Agency For Science, Technology And Research | Optical device and method of controlling the same |
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2005
- 2005-11-24 JP JP2005339467A patent/JP4604981B2/ja not_active Expired - Fee Related
-
2006
- 2006-11-22 US US11/562,519 patent/US7592682B2/en not_active Expired - Fee Related
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Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008096133A (ja) * | 2006-10-06 | 2008-04-24 | Sony Corp | 半導体装置および光検出方法 |
JP2009088488A (ja) * | 2007-09-11 | 2009-04-23 | Sony Corp | 記憶装置 |
JP2009212277A (ja) * | 2008-03-04 | 2009-09-17 | Sony Corp | 発振器および光検出回路 |
JP2009212279A (ja) * | 2008-03-04 | 2009-09-17 | Sony Corp | 半導体装置 |
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JP2010103536A (ja) * | 2008-10-21 | 2010-05-06 | Samsung Electronics Co Ltd | 半導体素子の動作方法 |
KR101497542B1 (ko) * | 2008-10-21 | 2015-03-02 | 삼성전자주식회사 | 반도체 소자의 동작 방법 |
JP2012008023A (ja) * | 2010-06-25 | 2012-01-12 | Panasonic Electric Works Co Ltd | 加速度センサ |
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US7592682B2 (en) | 2009-09-22 |
US20070114630A1 (en) | 2007-05-24 |
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