JP2007123644A - 電力半導体装置 - Google Patents

電力半導体装置 Download PDF

Info

Publication number
JP2007123644A
JP2007123644A JP2005315533A JP2005315533A JP2007123644A JP 2007123644 A JP2007123644 A JP 2007123644A JP 2005315533 A JP2005315533 A JP 2005315533A JP 2005315533 A JP2005315533 A JP 2005315533A JP 2007123644 A JP2007123644 A JP 2007123644A
Authority
JP
Japan
Prior art keywords
semiconductor device
protection mechanism
power semiconductor
smoothing capacitor
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005315533A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007123644A5 (enrdf_load_stackoverflow
Inventor
Yasunari Hino
泰成 日野
Masao Kikuchi
正雄 菊池
Giichi Tsunoda
義一 角田
Haruyuki Matsuo
治之 松尾
Shogo Matsuoka
尚吾 松岡
Naoto Kaneda
直人 金田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2005315533A priority Critical patent/JP2007123644A/ja
Publication of JP2007123644A publication Critical patent/JP2007123644A/ja
Publication of JP2007123644A5 publication Critical patent/JP2007123644A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • H01L2924/13055Insulated gate bipolar transistor [IGBT]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)
JP2005315533A 2005-10-31 2005-10-31 電力半導体装置 Pending JP2007123644A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005315533A JP2007123644A (ja) 2005-10-31 2005-10-31 電力半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005315533A JP2007123644A (ja) 2005-10-31 2005-10-31 電力半導体装置

Publications (2)

Publication Number Publication Date
JP2007123644A true JP2007123644A (ja) 2007-05-17
JP2007123644A5 JP2007123644A5 (enrdf_load_stackoverflow) 2007-11-29

Family

ID=38147138

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005315533A Pending JP2007123644A (ja) 2005-10-31 2005-10-31 電力半導体装置

Country Status (1)

Country Link
JP (1) JP2007123644A (enrdf_load_stackoverflow)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009004685A (ja) * 2007-06-25 2009-01-08 Nissan Motor Co Ltd 半導体装置
JP2009060691A (ja) * 2007-08-30 2009-03-19 Murata Mfg Co Ltd インバータ装置及びその設計方法
JP2009105178A (ja) * 2007-10-23 2009-05-14 Nichicon Corp パワー半導体ユニット
WO2010032473A1 (ja) * 2008-09-18 2010-03-25 三菱重工業株式会社 インバータ装置
JP2012028560A (ja) * 2010-07-23 2012-02-09 Mitsubishi Electric Corp コンデンサの冷却構造およびインバータ装置
JP2013055198A (ja) * 2011-09-02 2013-03-21 Mitsubishi Electric Corp 電力変換装置
JP2014038982A (ja) * 2012-08-20 2014-02-27 Ihi Corp 半導体パワーモジュール
JP2014120592A (ja) * 2012-12-17 2014-06-30 Daikin Ind Ltd パワーモジュール
JP2015018856A (ja) * 2013-07-09 2015-01-29 株式会社Ihi 半導体パワーモジュール
WO2015087555A1 (ja) * 2013-12-13 2015-06-18 日本精工株式会社 電子制御ユニット、電動パワーステアリング装置及び車両
JP2019134534A (ja) * 2018-01-30 2019-08-08 三菱電機株式会社 電力変換装置
JP2019161967A (ja) * 2018-03-16 2019-09-19 三菱電機株式会社 電力変換装置
CN112425056A (zh) * 2018-06-08 2021-02-26 法雷奥电机设备公司 电气电路、开关臂和电压转换器
CN112701931A (zh) * 2019-10-23 2021-04-23 三菱电机株式会社 功率转换装置及功率转换装置一体化旋转电机
DE102021126908A1 (de) 2021-01-14 2022-07-14 Mitsubishi Electric Corporation Halbleitervorrichtung
WO2023062998A1 (ja) * 2021-10-11 2023-04-20 Koa株式会社 回路保護素子

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01255257A (ja) * 1988-04-05 1989-10-12 Toshiba Corp 半導体装置
JPH04162691A (ja) * 1990-10-25 1992-06-08 Sanyo Electric Co Ltd 混成集積回路
JPH08195411A (ja) * 1995-01-17 1996-07-30 Toshiba Fa Syst Eng Kk パワーモジュール素子
JP2001326318A (ja) * 2000-05-16 2001-11-22 Mitsubishi Electric Corp パワーモジュール
JP2002315148A (ja) * 2001-04-12 2002-10-25 Auto Network Gijutsu Kenkyusho:Kk 車両用パワーディストリビュータ
JP2002353404A (ja) * 2001-05-22 2002-12-06 Taiheiyo Seiko Kk インテリジェントパワースイッチ装置
JP2005166867A (ja) * 2003-12-02 2005-06-23 Fuji Electric Holdings Co Ltd 電力変換装置の導体構造

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01255257A (ja) * 1988-04-05 1989-10-12 Toshiba Corp 半導体装置
JPH04162691A (ja) * 1990-10-25 1992-06-08 Sanyo Electric Co Ltd 混成集積回路
JPH08195411A (ja) * 1995-01-17 1996-07-30 Toshiba Fa Syst Eng Kk パワーモジュール素子
JP2001326318A (ja) * 2000-05-16 2001-11-22 Mitsubishi Electric Corp パワーモジュール
JP2002315148A (ja) * 2001-04-12 2002-10-25 Auto Network Gijutsu Kenkyusho:Kk 車両用パワーディストリビュータ
JP2002353404A (ja) * 2001-05-22 2002-12-06 Taiheiyo Seiko Kk インテリジェントパワースイッチ装置
JP2005166867A (ja) * 2003-12-02 2005-06-23 Fuji Electric Holdings Co Ltd 電力変換装置の導体構造

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009004685A (ja) * 2007-06-25 2009-01-08 Nissan Motor Co Ltd 半導体装置
JP2009060691A (ja) * 2007-08-30 2009-03-19 Murata Mfg Co Ltd インバータ装置及びその設計方法
JP2009105178A (ja) * 2007-10-23 2009-05-14 Nichicon Corp パワー半導体ユニット
EP2328265A4 (en) * 2008-09-18 2018-03-07 Mitsubishi Heavy Industries, Ltd. Inverter device
WO2010032473A1 (ja) * 2008-09-18 2010-03-25 三菱重工業株式会社 インバータ装置
JP2010074935A (ja) * 2008-09-18 2010-04-02 Mitsubishi Heavy Ind Ltd インバータ装置
US20110006718A1 (en) * 2008-09-18 2011-01-13 Mitsubishi Heavy Industries, Ltd. Inverter device
JP2012028560A (ja) * 2010-07-23 2012-02-09 Mitsubishi Electric Corp コンデンサの冷却構造およびインバータ装置
US8547698B2 (en) 2010-07-23 2013-10-01 Mitsubishi Electric Corporation Cooling structure of capacitor and inverter device
JP2013055198A (ja) * 2011-09-02 2013-03-21 Mitsubishi Electric Corp 電力変換装置
JP2014038982A (ja) * 2012-08-20 2014-02-27 Ihi Corp 半導体パワーモジュール
JP2014120592A (ja) * 2012-12-17 2014-06-30 Daikin Ind Ltd パワーモジュール
JP2015018856A (ja) * 2013-07-09 2015-01-29 株式会社Ihi 半導体パワーモジュール
WO2015087555A1 (ja) * 2013-12-13 2015-06-18 日本精工株式会社 電子制御ユニット、電動パワーステアリング装置及び車両
JP2019134534A (ja) * 2018-01-30 2019-08-08 三菱電機株式会社 電力変換装置
JP2019161967A (ja) * 2018-03-16 2019-09-19 三菱電機株式会社 電力変換装置
US10748859B2 (en) 2018-03-16 2020-08-18 Mitsubishi Electric Corporation Power converting device
DE102018221632B4 (de) 2018-03-16 2025-01-09 Mitsubishi Electric Corporation Leistungsumwandlungsvorrichtung
CN112425056A (zh) * 2018-06-08 2021-02-26 法雷奥电机设备公司 电气电路、开关臂和电压转换器
CN112701931A (zh) * 2019-10-23 2021-04-23 三菱电机株式会社 功率转换装置及功率转换装置一体化旋转电机
DE102021126908A1 (de) 2021-01-14 2022-07-14 Mitsubishi Electric Corporation Halbleitervorrichtung
DE102021126908B4 (de) 2021-01-14 2025-07-10 Mitsubishi Electric Corporation Halbleitervorrichtung
WO2023062998A1 (ja) * 2021-10-11 2023-04-20 Koa株式会社 回路保護素子

Similar Documents

Publication Publication Date Title
CN1322524C (zh) 熔断器、使用该熔断器的电池组及制造该熔断器的方法
JP5169353B2 (ja) パワーモジュール
JP2007123644A (ja) 電力半導体装置
CN111066116B (zh) 功率转换装置
US11373832B2 (en) Electric-power conversion apparatus
CN101847620A (zh) 功率模块
US9368309B2 (en) Electronic part and electronic control unit
JP6905356B2 (ja) パワー半導体モジュール
KR101828189B1 (ko) 회로 보드 어셈블리, 냉각기 팬 모듈을 위한 제어 디바이스 및 방법
JP5781185B1 (ja) 樹脂封止型半導体装置
US10109603B2 (en) Semiconductor device
JP6461264B1 (ja) 電力変換装置
JP4876934B2 (ja) 電気回路装置
JP2009117535A (ja) ソリッドステートリレーおよびこれを搭載した電子機器
JP6797289B2 (ja) 電力変換装置
JP4457633B2 (ja) ヒューズ機能付きコンデンサモジュール
CN100470796C (zh) 半导体器件
JP2018182220A (ja) 電力変換装置
JP6869309B2 (ja) 電力変換装置および電力変換装置一体型回転電機
JP4593518B2 (ja) ヒューズ付半導体装置
CN112789703A (zh) 保护元件
JP7337214B1 (ja) 電力変換装置
JP7086249B1 (ja) 電力変換装置及びそれを用いた回転電機
JP2008270528A (ja) 半導体モジュールの構造
JP2009117188A (ja) 発熱性回路素子と温度ヒューズとの接続構造及び回路構造

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071015

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20071015

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20080331

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100615

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100723

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20101005