JP2007115773A - 半導体記憶装置およびその製造方法 - Google Patents

半導体記憶装置およびその製造方法 Download PDF

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Publication number
JP2007115773A
JP2007115773A JP2005303387A JP2005303387A JP2007115773A JP 2007115773 A JP2007115773 A JP 2007115773A JP 2005303387 A JP2005303387 A JP 2005303387A JP 2005303387 A JP2005303387 A JP 2005303387A JP 2007115773 A JP2007115773 A JP 2007115773A
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JP
Japan
Prior art keywords
insulating film
gate
memory device
semiconductor memory
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2005303387A
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English (en)
Japanese (ja)
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JP2007115773A5 (enExample
Inventor
Kazuhiko Sanada
和彦 真田
Koji Kanamori
宏治 金森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Electronics Corp filed Critical NEC Electronics Corp
Priority to JP2005303387A priority Critical patent/JP2007115773A/ja
Priority to US11/546,954 priority patent/US20070085132A1/en
Priority to CNA2006101361869A priority patent/CN1953161A/zh
Publication of JP2007115773A publication Critical patent/JP2007115773A/ja
Publication of JP2007115773A5 publication Critical patent/JP2007115773A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region

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  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP2005303387A 2005-10-18 2005-10-18 半導体記憶装置およびその製造方法 Withdrawn JP2007115773A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2005303387A JP2007115773A (ja) 2005-10-18 2005-10-18 半導体記憶装置およびその製造方法
US11/546,954 US20070085132A1 (en) 2005-10-18 2006-10-13 Semiconductor memory device and method for producing same
CNA2006101361869A CN1953161A (zh) 2005-10-18 2006-10-13 半导体存储装置及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005303387A JP2007115773A (ja) 2005-10-18 2005-10-18 半導体記憶装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2007115773A true JP2007115773A (ja) 2007-05-10
JP2007115773A5 JP2007115773A5 (enExample) 2008-08-28

Family

ID=37947366

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005303387A Withdrawn JP2007115773A (ja) 2005-10-18 2005-10-18 半導体記憶装置およびその製造方法

Country Status (3)

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US (1) US20070085132A1 (enExample)
JP (1) JP2007115773A (enExample)
CN (1) CN1953161A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI281753B (en) * 2005-12-13 2007-05-21 Powerchip Semiconductor Corp Non-volatile memory and manufacturing method and operating method thereof
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US9761689B2 (en) * 2014-09-12 2017-09-12 Globalfoundries Inc. Method of forming a semiconductor device and according semiconductor device
TWI585951B (zh) * 2015-12-31 2017-06-01 力晶科技股份有限公司 記憶體結構

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5343063A (en) * 1990-12-18 1994-08-30 Sundisk Corporation Dense vertical programmable read only memory cell structure and processes for making them
US5278439A (en) * 1991-08-29 1994-01-11 Ma Yueh Y Self-aligned dual-bit split gate (DSG) flash EEPROM cell
ATE238609T1 (de) * 1991-08-29 2003-05-15 Hyundai Electronics Ind Selbstjustierende flash-eeprom-zelle mit doppelbit-geteiltem gat
JP3710880B2 (ja) * 1996-06-28 2005-10-26 株式会社東芝 不揮発性半導体記憶装置
US6798012B1 (en) * 1999-12-10 2004-09-28 Yueh Yale Ma Dual-bit double-polysilicon source-side injection flash EEPROM cell
JP4027656B2 (ja) * 2001-12-10 2007-12-26 シャープ株式会社 不揮発性半導体記憶装置及びその動作方法
US7443725B2 (en) * 2003-01-22 2008-10-28 Nxp B.V. Floating gate isolation and method of making the same
US6930348B2 (en) * 2003-06-24 2005-08-16 Taiwan Semiconductor Manufacturing Co., Ltd. Dual bit split gate flash memory
JP2005051227A (ja) * 2003-07-17 2005-02-24 Nec Electronics Corp 半導体記憶装置
JP2005085903A (ja) * 2003-09-05 2005-03-31 Renesas Technology Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
US20070085132A1 (en) 2007-04-19
CN1953161A (zh) 2007-04-25

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