JP2007095879A - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
- Publication number
- JP2007095879A JP2007095879A JP2005281426A JP2005281426A JP2007095879A JP 2007095879 A JP2007095879 A JP 2007095879A JP 2005281426 A JP2005281426 A JP 2005281426A JP 2005281426 A JP2005281426 A JP 2005281426A JP 2007095879 A JP2007095879 A JP 2007095879A
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- JP
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- Prior art keywords
- nitrogen gas
- standby chamber
- chamber
- path
- boat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 238000012545 processing Methods 0.000 title claims abstract description 40
- 239000000758 substrate Substances 0.000 title claims description 25
- 238000007599 discharging Methods 0.000 claims abstract description 4
- 239000011261 inert gas Substances 0.000 claims description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 76
- 229910001873 dinitrogen Inorganic materials 0.000 abstract description 72
- 238000010438 heat treatment Methods 0.000 abstract description 18
- 239000002245 particle Substances 0.000 abstract description 9
- 239000007789 gas Substances 0.000 abstract description 8
- 239000000126 substance Substances 0.000 abstract description 4
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 56
- 238000012423 maintenance Methods 0.000 description 16
- 238000012546 transfer Methods 0.000 description 13
- 238000009434 installation Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 239000005416 organic matter Substances 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 239000003779 heat-resistant material Substances 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 238000007664 blowing Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002957 persistent organic pollutant Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
Images
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005281426A JP2007095879A (ja) | 2005-09-28 | 2005-09-28 | 基板処理装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005281426A JP2007095879A (ja) | 2005-09-28 | 2005-09-28 | 基板処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007095879A true JP2007095879A (ja) | 2007-04-12 |
| JP2007095879A5 JP2007095879A5 (enrdf_load_stackoverflow) | 2008-10-23 |
Family
ID=37981231
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005281426A Pending JP2007095879A (ja) | 2005-09-28 | 2005-09-28 | 基板処理装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2007095879A (enrdf_load_stackoverflow) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009065113A (ja) * | 2007-08-14 | 2009-03-26 | Hitachi Kokusai Electric Inc | 基板処理装置 |
| JP2012094805A (ja) * | 2010-06-14 | 2012-05-17 | Hitachi Kokusai Electric Inc | 基板処理装置 |
| US8443484B2 (en) | 2007-08-14 | 2013-05-21 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus |
| JP2014067979A (ja) * | 2012-09-27 | 2014-04-17 | Hitachi Kokusai Electric Inc | 基板処理装置、基板処理方法及び半導体装置の製造方法 |
| JP2018206874A (ja) * | 2017-05-31 | 2018-12-27 | Tdk株式会社 | Ｅｆｅｍ及びｅｆｅｍへの乾燥空気の導入方法 |
| KR20190035523A (ko) | 2017-09-26 | 2019-04-03 | 가부시키가이샤 코쿠사이 엘렉트릭 | 기판 처리 장치, 반도체 장치의 제조 방법, 및 프로그램 |
| KR20210078679A (ko) * | 2019-12-19 | 2021-06-29 | 주식회사 원익아이피에스 | 기판처리장치 |
| US11521880B2 (en) | 2018-07-27 | 2022-12-06 | Kokusai Electric Corporation | Substrate processing apparatus and recording medium for changing atmosphere of transfer chamber |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06177054A (ja) * | 1992-12-01 | 1994-06-24 | Shinko Electric Co Ltd | 縦型半導体製造装置における主室のガス置換方法、及びその装置 |
| JPH06177066A (ja) * | 1992-12-04 | 1994-06-24 | Tokyo Electron Ltd | 処理装置 |
| JPH06224144A (ja) * | 1993-01-21 | 1994-08-12 | Tokyo Electron Tohoku Ltd | 処理装置 |
| JPH07161656A (ja) * | 1993-12-10 | 1995-06-23 | Tokyo Electron Ltd | 熱処理装置 |
| JP2002299262A (ja) * | 2001-03-30 | 2002-10-11 | Tokyo Electron Ltd | ロードロック室及びその排気方法 |
-
2005
- 2005-09-28 JP JP2005281426A patent/JP2007095879A/ja active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06177054A (ja) * | 1992-12-01 | 1994-06-24 | Shinko Electric Co Ltd | 縦型半導体製造装置における主室のガス置換方法、及びその装置 |
| JPH06177066A (ja) * | 1992-12-04 | 1994-06-24 | Tokyo Electron Ltd | 処理装置 |
| JPH06224144A (ja) * | 1993-01-21 | 1994-08-12 | Tokyo Electron Tohoku Ltd | 処理装置 |
| JPH07161656A (ja) * | 1993-12-10 | 1995-06-23 | Tokyo Electron Ltd | 熱処理装置 |
| JP2002299262A (ja) * | 2001-03-30 | 2002-10-11 | Tokyo Electron Ltd | ロードロック室及びその排気方法 |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101051027B1 (ko) * | 2007-08-14 | 2011-07-21 | 가부시키가이샤 히다치 고쿠사이 덴키 | 기판 처리 장치 |
| US8443484B2 (en) | 2007-08-14 | 2013-05-21 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus |
| JP2009065113A (ja) * | 2007-08-14 | 2009-03-26 | Hitachi Kokusai Electric Inc | 基板処理装置 |
| US9698037B2 (en) | 2010-06-14 | 2017-07-04 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus |
| JP2012094805A (ja) * | 2010-06-14 | 2012-05-17 | Hitachi Kokusai Electric Inc | 基板処理装置 |
| KR101295459B1 (ko) * | 2010-06-14 | 2013-08-09 | 가부시키가이샤 히다치 고쿠사이 덴키 | 기판 처리 장치 |
| KR101295436B1 (ko) | 2010-06-14 | 2013-08-09 | 가부시키가이샤 히다치 고쿠사이 덴키 | 기판 처리 장치 |
| JP2014067979A (ja) * | 2012-09-27 | 2014-04-17 | Hitachi Kokusai Electric Inc | 基板処理装置、基板処理方法及び半導体装置の製造方法 |
| JP2018206874A (ja) * | 2017-05-31 | 2018-12-27 | Tdk株式会社 | Ｅｆｅｍ及びｅｆｅｍへの乾燥空気の導入方法 |
| JP6992283B2 (ja) | 2017-05-31 | 2022-01-13 | Tdk株式会社 | Ｅｆｅｍ及びｅｆｅｍへの乾燥空気の導入方法 |
| KR20190035523A (ko) | 2017-09-26 | 2019-04-03 | 가부시키가이샤 코쿠사이 엘렉트릭 | 기판 처리 장치, 반도체 장치의 제조 방법, 및 프로그램 |
| US10519543B2 (en) | 2017-09-26 | 2019-12-31 | Kokusai Electric Corporation | Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium |
| US11521880B2 (en) | 2018-07-27 | 2022-12-06 | Kokusai Electric Corporation | Substrate processing apparatus and recording medium for changing atmosphere of transfer chamber |
| KR20210078679A (ko) * | 2019-12-19 | 2021-06-29 | 주식회사 원익아이피에스 | 기판처리장치 |
| KR102582276B1 (ko) | 2019-12-19 | 2023-09-25 | 주식회사 원익아이피에스 | 기판처리장치 |
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