JP2007088018A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
- Publication number
- JP2007088018A JP2007088018A JP2005271745A JP2005271745A JP2007088018A JP 2007088018 A JP2007088018 A JP 2007088018A JP 2005271745 A JP2005271745 A JP 2005271745A JP 2005271745 A JP2005271745 A JP 2005271745A JP 2007088018 A JP2007088018 A JP 2007088018A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- interlayer insulating
- film
- wiring
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 105
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 35
- 239000011229 interlayer Substances 0.000 claims abstract description 293
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 111
- 239000010410 layer Substances 0.000 claims abstract description 111
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims abstract description 41
- 238000009413 insulation Methods 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 38
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 32
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 32
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 16
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 16
- 229910052721 tungsten Inorganic materials 0.000 claims description 16
- 239000010937 tungsten Substances 0.000 claims description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 9
- 239000002994 raw material Substances 0.000 claims description 9
- 150000002500 ions Chemical class 0.000 claims description 8
- 230000000149 penetrating effect Effects 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 4
- 229910000077 silane Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 81
- 239000010703 silicon Substances 0.000 abstract description 81
- 230000014759 maintenance of location Effects 0.000 abstract description 31
- 230000006866 deterioration Effects 0.000 abstract description 19
- 239000001257 hydrogen Substances 0.000 abstract description 14
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 11
- 239000002019 doping agent Substances 0.000 abstract 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 32
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 32
- 239000010936 titanium Substances 0.000 description 32
- 229910052719 titanium Inorganic materials 0.000 description 32
- 239000012535 impurity Substances 0.000 description 27
- 238000005530 etching Methods 0.000 description 22
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 18
- 230000015572 biosynthetic process Effects 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 229910052581 Si3N4 Inorganic materials 0.000 description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 7
- 230000006870 function Effects 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 7
- 230000002542 deteriorative effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000002955 isolation Methods 0.000 description 4
- 230000035515 penetration Effects 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 3
- 230000007257 malfunction Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000002784 hot electron Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000007790 scraping Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005271745A JP2007088018A (ja) | 2005-09-20 | 2005-09-20 | 半導体装置およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005271745A JP2007088018A (ja) | 2005-09-20 | 2005-09-20 | 半導体装置およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007088018A true JP2007088018A (ja) | 2007-04-05 |
| JP2007088018A5 JP2007088018A5 (https=) | 2008-10-23 |
Family
ID=37974739
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005271745A Pending JP2007088018A (ja) | 2005-09-20 | 2005-09-20 | 半導体装置およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2007088018A (https=) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009170729A (ja) * | 2008-01-17 | 2009-07-30 | Spansion Llc | 半導体装置の製造方法 |
| JP2014112746A (ja) * | 2014-03-27 | 2014-06-19 | Spansion Llc | 半導体装置の製造方法 |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH118234A (ja) * | 1997-06-17 | 1999-01-12 | Rohm Co Ltd | 半導体装置 |
| JPH11317451A (ja) * | 1998-05-07 | 1999-11-16 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| JP2000174123A (ja) * | 1998-12-09 | 2000-06-23 | Nec Corp | 半導体装置及びその製造方法 |
| JP2000269328A (ja) * | 1999-03-16 | 2000-09-29 | Toshiba Corp | 半導体装置及びその製造方法 |
| JP2000353757A (ja) * | 1999-06-10 | 2000-12-19 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置およびその製造方法 |
| JP2001028404A (ja) * | 1999-07-13 | 2001-01-30 | Sanyo Electric Co Ltd | 不揮発性半導体記憶装置とその製造方法 |
| JP2001093979A (ja) * | 1999-09-27 | 2001-04-06 | Toshiba Corp | 半導体装置及びその製造方法 |
| JP2002110932A (ja) * | 2000-09-28 | 2002-04-12 | Toshiba Corp | 半導体装置及びその製造方法 |
| JP2003297956A (ja) * | 2002-04-04 | 2003-10-17 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
-
2005
- 2005-09-20 JP JP2005271745A patent/JP2007088018A/ja active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH118234A (ja) * | 1997-06-17 | 1999-01-12 | Rohm Co Ltd | 半導体装置 |
| JPH11317451A (ja) * | 1998-05-07 | 1999-11-16 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| JP2000174123A (ja) * | 1998-12-09 | 2000-06-23 | Nec Corp | 半導体装置及びその製造方法 |
| JP2000269328A (ja) * | 1999-03-16 | 2000-09-29 | Toshiba Corp | 半導体装置及びその製造方法 |
| JP2000353757A (ja) * | 1999-06-10 | 2000-12-19 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置およびその製造方法 |
| JP2001028404A (ja) * | 1999-07-13 | 2001-01-30 | Sanyo Electric Co Ltd | 不揮発性半導体記憶装置とその製造方法 |
| JP2001093979A (ja) * | 1999-09-27 | 2001-04-06 | Toshiba Corp | 半導体装置及びその製造方法 |
| JP2002110932A (ja) * | 2000-09-28 | 2002-04-12 | Toshiba Corp | 半導体装置及びその製造方法 |
| JP2003297956A (ja) * | 2002-04-04 | 2003-10-17 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009170729A (ja) * | 2008-01-17 | 2009-07-30 | Spansion Llc | 半導体装置の製造方法 |
| JP2014112746A (ja) * | 2014-03-27 | 2014-06-19 | Spansion Llc | 半導体装置の製造方法 |
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