JP2007053119A - 半導体ウェーハの製造方法および半導体ウェーハ - Google Patents

半導体ウェーハの製造方法および半導体ウェーハ Download PDF

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Publication number
JP2007053119A
JP2007053119A JP2002247560A JP2002247560A JP2007053119A JP 2007053119 A JP2007053119 A JP 2007053119A JP 2002247560 A JP2002247560 A JP 2002247560A JP 2002247560 A JP2002247560 A JP 2002247560A JP 2007053119 A JP2007053119 A JP 2007053119A
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Japan
Prior art keywords
grinding
semiconductor wafer
wafer
polishing
ddg
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JP2002247560A
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English (en)
Japanese (ja)
Inventor
Georg J Pietsch
ヨット ピーチュ ゲオルク
Michael Kerstan
ケルスタン ミヒャエル
Anton Huber
フーバー アントン
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Siltronic AG
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Siltronic AG
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Publication of JP2007053119A publication Critical patent/JP2007053119A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2002247560A 2001-08-30 2002-08-27 半導体ウェーハの製造方法および半導体ウェーハ Pending JP2007053119A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10142400A DE10142400B4 (de) 2001-08-30 2001-08-30 Halbleiterscheibe mit verbesserter lokaler Ebenheit und Verfahren zu deren Herstellung

Related Child Applications (1)

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JP2010171493A Division JP5358531B2 (ja) 2001-08-30 2010-07-30 半導体ウェーハの製造方法

Publications (1)

Publication Number Publication Date
JP2007053119A true JP2007053119A (ja) 2007-03-01

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Family Applications (2)

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JP2002247560A Pending JP2007053119A (ja) 2001-08-30 2002-08-27 半導体ウェーハの製造方法および半導体ウェーハ
JP2010171493A Expired - Lifetime JP5358531B2 (ja) 2001-08-30 2010-07-30 半導体ウェーハの製造方法

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JP2010171493A Expired - Lifetime JP5358531B2 (ja) 2001-08-30 2010-07-30 半導体ウェーハの製造方法

Country Status (6)

Country Link
US (1) US7077726B2 (th)
JP (2) JP2007053119A (th)
KR (1) KR100511381B1 (th)
CN (1) CN1265439C (th)
DE (1) DE10142400B4 (th)
TW (1) TW575929B (th)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009302408A (ja) * 2008-06-16 2009-12-24 Sumco Corp 半導体ウェーハの製造方法
JP2010109370A (ja) * 2008-10-29 2010-05-13 Siltronic Ag 半導体ウェーハの両面をポリッシングする方法
JP2014057081A (ja) * 2010-10-20 2014-03-27 Siltronic Ag 単結晶シリコンで構成された半導体ウェハを熱処理中に支持するための支持リング、該半導体ウェハの熱処理のための方法、および単結晶シリコンで構成された熱処理された半導体ウェハ

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JP4093793B2 (ja) * 2002-04-30 2008-06-04 信越半導体株式会社 半導体ウエーハの製造方法及びウエーハ
JP4092993B2 (ja) * 2002-09-13 2008-05-28 信越半導体株式会社 単結晶育成方法
US7597815B2 (en) * 2003-05-29 2009-10-06 Dressel Pte. Ltd. Process for producing a porous track membrane
DE10344602A1 (de) * 2003-09-25 2005-05-19 Siltronic Ag Verfahren zur Herstellung von Halbleiterscheiben
DE102004005702A1 (de) * 2004-02-05 2005-09-01 Siltronic Ag Halbleiterscheibe, Vorrichtung und Verfahren zur Herstellung der Halbleiterscheibe
DE102004031966A1 (de) * 2004-07-01 2006-01-19 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
DE102005046726B4 (de) * 2005-09-29 2012-02-02 Siltronic Ag Nichtpolierte monokristalline Siliziumscheibe und Verfahren zu ihrer Herstellung
US7662023B2 (en) * 2006-01-30 2010-02-16 Memc Electronic Materials, Inc. Double side wafer grinder and methods for assessing workpiece nanotopology
US7601049B2 (en) * 2006-01-30 2009-10-13 Memc Electronic Materials, Inc. Double side wafer grinder and methods for assessing workpiece nanotopology
US7930058B2 (en) * 2006-01-30 2011-04-19 Memc Electronic Materials, Inc. Nanotopography control and optimization using feedback from warp data
JP5518338B2 (ja) * 2006-01-30 2014-06-11 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 加工対象物のナノトポロジを評価するためのウェハ両面グラインダ及び方法
DE102006062871B4 (de) * 2006-07-13 2012-06-21 Peter Wolters Gmbh Verfahren zum gleichzeitigen beidseitigen Schleifen mehrerer Halbleiterscheiben
DE102006062872B4 (de) * 2006-07-13 2012-06-14 Peter Wolters Gmbh Verfahren zum gleichzeitigen beidseitigen Schleifen mehrerer Halbleiterscheiben
DE102007030958B4 (de) 2007-07-04 2014-09-11 Siltronic Ag Verfahren zum Schleifen von Halbleiterscheiben
CH701168B1 (de) * 2007-08-17 2010-12-15 Kellenberger & Co Ag L Verfahren und Bearbeitungsmaschine zur Behandlung von Werkstücken.
JP2010073137A (ja) * 2008-09-22 2010-04-02 Nec Electronics Corp 半導体集積回路設計方法及び設計プログラム
DE102009025243B4 (de) 2009-06-17 2011-11-17 Siltronic Ag Verfahren zur Herstellung und Verfahren zur Bearbeitung einer Halbleiterscheibe aus Silicium
DE102009051008B4 (de) * 2009-10-28 2013-05-23 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
DE102010005904B4 (de) * 2010-01-27 2012-11-22 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
JP6045542B2 (ja) * 2014-09-11 2016-12-14 信越半導体株式会社 半導体ウェーハの加工方法、貼り合わせウェーハの製造方法、及びエピタキシャルウェーハの製造方法
CN106482692A (zh) * 2016-09-29 2017-03-08 广州兴森快捷电路科技有限公司 3d打印阻焊厚度均匀性的测试方法及测试装置
EP3364247A1 (en) 2017-02-17 2018-08-22 ASML Netherlands B.V. Methods & apparatus for monitoring a lithographic manufacturing process
CN112454014B (zh) * 2020-10-29 2022-10-11 中国工程物理研究院激光聚变研究中心 一种红外透明陶瓷晶粒尺寸的测量方法
CN112621557B (zh) * 2020-12-17 2022-08-09 江苏集萃精凯高端装备技术有限公司 Yag晶片的抛光方法
EP4047635A1 (de) 2021-02-18 2022-08-24 Siltronic AG Verfahren zur herstellung von scheiben aus einem zylindrischen stab aus halbleitermaterial
CN113611593B (zh) * 2021-08-02 2024-06-14 中国电子科技集团公司第四十六研究所 一种超薄锗片翘曲形貌的控制方法

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JPH0226608Y2 (th) * 1985-10-23 1990-07-19
JPS63127872A (ja) * 1986-11-17 1988-05-31 Kobe Steel Ltd 薄板円板の鏡面加工方法
JPH02106259A (ja) * 1988-10-14 1990-04-18 Daisho Seiki Kk 両頭平面研削装置
JP2839801B2 (ja) * 1992-09-18 1998-12-16 三菱マテリアル株式会社 ウェーハの製造方法
JP3923107B2 (ja) * 1995-07-03 2007-05-30 株式会社Ｓｕｍｃｏ シリコンウェーハの製造方法およびその装置
KR100227924B1 (ko) * 1995-07-28 1999-11-01 가이데 히사오 반도체 웨이퍼 제조방법, 그 방법에 사용되는 연삭방법 및 이에 사용되는 장치
JPH0976147A (ja) * 1995-09-08 1997-03-25 Kao Corp 表面加工基板及びその製造方法
JP3620554B2 (ja) * 1996-03-25 2005-02-16 信越半導体株式会社 半導体ウェーハ製造方法
JPH09270396A (ja) * 1996-03-29 1997-10-14 Komatsu Electron Metals Co Ltd 半導体ウェハの製法
JP3339545B2 (ja) * 1996-05-22 2002-10-28 信越半導体株式会社 半導体ウエーハの製造方法
DE19704546A1 (de) * 1997-02-06 1998-08-13 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer einseitig beschichteten und mit einem Finish versehenen Halbleiterscheibe
JPH10256203A (ja) * 1997-03-11 1998-09-25 Super Silicon Kenkyusho:Kk 鏡面仕上げされた薄板状ウェーハの製造方法
US6296553B1 (en) 1997-04-02 2001-10-02 Nippei Toyama Corporation Grinding method, surface grinder, workpiece support, mechanism and work rest
JPH11154655A (ja) * 1997-11-21 1999-06-08 Komatsu Electron Metals Co Ltd 半導体ウェハの製造方法
DE19823904A1 (de) * 1998-05-28 1999-12-02 Wacker Siltronic Halbleitermat Hochebene Halbleiterscheibe aus Silicium und Verfahren zur Herstellung von Halbleiterscheiben
JP3328193B2 (ja) 1998-07-08 2002-09-24 信越半導体株式会社 半導体ウエーハの製造方法
DE19833257C1 (de) * 1998-07-23 1999-09-30 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe
JP3664593B2 (ja) * 1998-11-06 2005-06-29 信越半導体株式会社 半導体ウエーハおよびその製造方法
JP4493062B2 (ja) * 1999-06-30 2010-06-30 株式会社Ｓｕｍｃｏ 両面研磨ウェーハの製造方法
JP3794538B2 (ja) * 1999-09-02 2006-07-05 信越半導体株式会社 両面同時研削装置および両面同時研削方法
US6726525B1 (en) * 1999-09-24 2004-04-27 Shin-Estu Handotai Co., Ltd. Method and device for grinding double sides of thin disk work

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009302408A (ja) * 2008-06-16 2009-12-24 Sumco Corp 半導体ウェーハの製造方法
JP2010109370A (ja) * 2008-10-29 2010-05-13 Siltronic Ag 半導体ウェーハの両面をポリッシングする方法
US9224613B2 (en) 2008-10-29 2015-12-29 Siltronic Ag Method for polishing both sides of a semiconductor wafer
JP2014057081A (ja) * 2010-10-20 2014-03-27 Siltronic Ag 単結晶シリコンで構成された半導体ウェハを熱処理中に支持するための支持リング、該半導体ウェハの熱処理のための方法、および単結晶シリコンで構成された熱処理された半導体ウェハ

Also Published As

Publication number Publication date
TW575929B (en) 2004-02-11
DE10142400B4 (de) 2009-09-03
US20030060050A1 (en) 2003-03-27
JP5358531B2 (ja) 2013-12-04
CN1265439C (zh) 2006-07-19
KR20030019144A (ko) 2003-03-06
JP2010283371A (ja) 2010-12-16
DE10142400A1 (de) 2003-03-27
CN1434489A (zh) 2003-08-06
US7077726B2 (en) 2006-07-18
KR100511381B1 (ko) 2005-08-31

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