JP2007038393A - ナノ物質配列方法及びこれを用いる液晶表示装置の製造方法 - Google Patents
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Abstract
【解決手段】本発明によるナノ物質配列方法は、ナノ物質が含まれた分散溶液を基板上にコーティングする段階と、帯電された導体部を用いて、前記ナノ物質を一定の方向に配列する段階と、を含む。本発明により製造される液晶表示装置は、一定の方向に配列されたナノ物質からなるナノトランジスタを備えることで、各単位画素の制御が容易で、均一な画質を表示することができる。
【選択図】図2a
Description
200:ナノ物質配列装置
210:支持手段
220:伝導性基板
230:電源供給部
240:絶縁体
310:ゲート配線
340:データ配線
345a、345b:ソース/ドレイン電極
360:画素電極
Claims (21)
- ナノ物質が含まれた分散溶液を、基板上にコーティングする段階と、
帯電した導体部を用いて、前記ナノ物質を一定の方向に配列する段階と、を含むことを特徴とするナノ物質配列方法。 - 前記ナノ物質を配列する段階は、前記基板に対して前記帯電した導体部を移動させる段階をさらに含むことを特徴とする請求項1に記載のナノ物質配列方法。
- 前記ナノ物質は、極性ナノ物質であることを特徴とする請求項1に記載のナノ物質配列方法。
- 前記分散溶液は、前記基板に対して、前記ナノ物質の端部を固定することを特徴とする請求項2に記載のナノ物質配列方法。
- 前記分散溶液には、前記ナノ物質を極性物質化させる極性物質が混合されたことを特徴とする請求項1に記載のナノ物質配列方法。
- 前記帯電導体部の電界は、前記分散溶液に含まれたナノ物質を、前記帯電導体が移動する方向に、一定に整列させることを特徴とする請求項4に記載のナノ物質配列方法。
- 前記ナノ物質は、電界により実質的に基板に対して垂直に立ったまま、前記帯電導体部の移動方向に回転しながら整列することを特徴とする請求項6に記載のナノ物質配列方法。
- 前記基板上に親水領域を形成する表面処理を行い、前記親水領域に前記分散溶液を落とす段階をさらに含むことを特徴とする請求項1に記載のナノ物質配列方法。
- 前記帯電導体部は、親水的絶縁物質を含むことを特徴とする請求項1に記載のナノ物質配列方法。
- 前記ナノ物質は、ナノワイヤまたはナノチューブであることを特徴とする請求項1に記載のナノ物質配列方法。
- 前記ナノ物質は、Si、Ge、Sn、Se、Te、B、C、P、GaN、ZnO、SiO2及びAl2O3からなる群から選択された少なくとも一つであることを特徴とする請求項1に記載のナノ物質配列方法。
- 前記ナノ物質を配列する段階は、前記基板と近接するように前記帯電導体部を移動させる段階をさらに含むことを特徴とする請求項1に記載のナノ物質配列方法。
- 前記ナノ物質を配列する段階は、前記基板に対して帯電導体部を所定距離移動させる段階をさらに含むことを特徴とする請求項12に記載のナノ物質配列方法。
- 前記ナノ物質を配列してから、熱処理により前記基板上に一定の方向に配列されたナノ物質を固定する段階をさらに含むことを特徴とする請求項1に記載のナノ物質配列方法。
- ゲート配線を備えた基板を準備する段階と、
前記ゲート配線が形成された基板上に、ゲート絶縁膜を形成する段階と、
前記ゲート絶縁膜上に、親水領域と疎水領域とに分離するために、表面処理をする段階と、
前記親水領域上に、ナノ物質が分散された分散溶液を落とす段階と、
前記帯電体を用いて、前記ナノ物質を一定の方向に配列する段階と、
前記基板を熱処理し、前記ゲート絶縁膜上に前記ナノ物質を固定して、半導体層を形成する段階と、
前記半導体層上に、互いに離隔して配置されたソース/ドレイン電極を形成する段階と、
前記ソース/ドレイン電極を含む基板全面に位置しながら、前記ドレイン電極の一部分を露出するコンタクトホールを備える保護膜を形成する段階と、
前記コンタクトホールを通して、前記ドレイン電極と電気的に連結される画素電極を形成する段階と、
を含むことを特徴とする液晶表示装置の製造方法。 - 前記ナノ物質は、ナノワイヤまたはナノチューブであることを特徴とする請求項15に記載の液晶表示装置の製造方法。
- 前記ナノ物質は、Si、Ge、Sn、Se、Te、B、C、P、GaN、ZnO、SiO2及びAl2O3からななる群から選択された少なくとも一つであることを特徴とする請求項15に記載の液晶表示装置の製造方法。
- 前記ナノ物質を配列する段階は、前記分散溶液の表面にコンタクトしながら、前記基板に対して前記帯電導体部を移動させる段階をさらに含むことを特徴とする請求項15に記載の液晶表示装置の製造方法。
- 前記帯電体は、基板に対して所定距離離隔して移動することを特徴とする請求項15に記載の液晶表示装置の製造方法。
- 前記親水領域は、前記ゲート配線の一部分と対応する領域であることを特徴とする請求項15に記載の液晶表示装置の製造方法。
- 基板を設け、前記基板上に親水領域を形成する表面処理を行う段階と、
前記親水領域上に、ナノ物質が分散された分散溶液を形成する段階と、
帯電体を用いて、前記ナノ物質を一定の方向に配列する段階と、
前記基板上にナノ物質を固定するために熱処理をして、導電層を形成する段階と、
を含むことを特徴とする液晶表示装置の製造方法。
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JP2015111741A (ja) * | 2015-03-12 | 2015-06-18 | セイコーエプソン株式会社 | 半導体装置 |
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US20070026646A1 (en) | 2007-02-01 |
US7829474B2 (en) | 2010-11-09 |
KR101252850B1 (ko) | 2013-04-09 |
KR20070014955A (ko) | 2007-02-01 |
JP4594275B2 (ja) | 2010-12-08 |
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