JP2007036014A - 回路装置 - Google Patents
回路装置 Download PDFInfo
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- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
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- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
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Abstract
【解決手段】 本発明の混成集積回路装置10は、表面に電気回路が形成された回路基板11が、ケース材18の内部に収納された構成となっている。回路基板11の上面には、絶縁層12を介して、導電パターン13が形成され、この導電パターン13の所定の箇所には、半導体素子15A等の回路素子が実装されている。また、ケース材18の内部の気圧は外部よりも高く設定され、ケース材18を浸透して内部に水分が進入しない構成と成っている。
【選択図】 図1
Description
本形態では、回路装置の一例として混成集積回路装置10の構造を説明する。
本形態では、図4から図6を参照して、混成集積回路装置10の製造方法を説明する。ここでは、図3(B)に示したような、傾斜面28、29が回路基板11の側面に形成された混成集積回路装置10の製造方法を説明する。
11 回路基板
12 絶縁層
13 導電パターン
13A パッド
14 内部空間
15A 半導体素子
15B チップ素子
17 金属細線
18 ケース材
18A 筐体部
18B 蓋部
19 接着材
20 接合材
24 固定基板
25 リード
26 突出部
27 放熱基板
28、29 傾斜面
30 金属基板
31 ユニット
32 カットソー
33 支持部
34 カッター
35 被覆樹脂
36 凹部
Claims (8)
- 樹脂から成り内部空間が密閉されたケース材と、
導電パターンおよび回路素子から成る電気回路が設けられた主面が前記ケース材の前記内部空間に面する回路基板と、
一方が前記回路基板の表面に形成された電気回路に接続され、他方が前記ケース材の外部に導出された外部端子とを具備し、
前記ケース材の前記内部空間の気圧を外部よりも高くすることを特徴とする回路装置。 - 前記内部空間の気圧を1気圧以上にすることを特徴とする請求項1記載の回路装置。
- 前記内部空間に不活性ガスを充填することを特徴とする請求項1記載の回路装置。
- 前記回路基板は絶縁性接着材を介して前記ケース材に固着され、
前記回路基板の主面を前記絶縁性接着材から離間させることを特徴とする請求項1記載の回路装置。 - 前記回路基板の裏面を前記ケース材の外部に露出させることを特徴とする請求項1記載の回路装置。
- 前記回路素子が被覆されるように、前記回路基板の表面を被覆樹脂により被覆し、
前記被覆樹脂を、前記ケース材の内壁から離間させることを特徴とする請求項1記載の回路装置。 - 前記回路基板の側面には、外側に突出して傾斜する傾斜面が形成され、
前記傾斜面が前記ケース材の内壁に当接し、前記回路基板の主面が前記ケース材から離間されることを特徴とする請求項1記載の回路装置。 - 前記ケース材の内壁に固定基板を設け、
前記固定基板に前記回路基板を固着することを特徴とする請求項1記載の回路装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005218723A JP4769973B2 (ja) | 2005-07-28 | 2005-07-28 | 回路装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005218723A JP4769973B2 (ja) | 2005-07-28 | 2005-07-28 | 回路装置 |
Publications (2)
Publication Number | Publication Date |
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JP2007036014A true JP2007036014A (ja) | 2007-02-08 |
JP4769973B2 JP4769973B2 (ja) | 2011-09-07 |
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JP2005218723A Expired - Fee Related JP4769973B2 (ja) | 2005-07-28 | 2005-07-28 | 回路装置 |
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Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2043417A2 (en) | 2007-09-27 | 2009-04-01 | Sanyo Electric Co., Ltd. | Circuit device, circuit module, and outdoor unit |
JP2009081195A (ja) * | 2007-09-25 | 2009-04-16 | Sanyo Electric Co Ltd | 発光モジュール |
US7746658B2 (en) | 2007-09-26 | 2010-06-29 | Sanyo Electric Co., Ltd. | Circuit device |
US7782628B2 (en) | 2007-09-27 | 2010-08-24 | Sanyo Electric Co., Ltd. | Circuit device |
US8102670B2 (en) | 2007-09-27 | 2012-01-24 | Sanyo Semiconductor Co., Ltd. | Circuit device and method of manufacturing the same |
US8107255B2 (en) | 2007-09-27 | 2012-01-31 | Sanyo Semiconductor Co., Ltd. | Circuit device and method of manufacturing the same |
US8169784B2 (en) | 2007-09-27 | 2012-05-01 | Sanyo Semiconductor Co., Ltd. | Circuit module |
US8373197B2 (en) | 2008-09-29 | 2013-02-12 | Sanyo Semiconductor Co., Ltd. | Circuit device |
US9271397B2 (en) | 2010-09-24 | 2016-02-23 | Semiconductor Components Industries, Llc | Circuit device |
US9362205B2 (en) | 2010-09-24 | 2016-06-07 | Semiconductor Components Industries, Llc | Circuit device |
US9363894B2 (en) | 2010-09-24 | 2016-06-07 | Semiconductor Components Industries, Llc | Circuit device |
JP2017118058A (ja) * | 2015-12-25 | 2017-06-29 | 富士電機株式会社 | 半導体装置 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62135464A (ja) * | 1985-12-10 | 1987-06-18 | Nippon Kayaku Co Ltd | フエニルピペラジン誘導体 |
JPS63165859A (ja) * | 1986-12-26 | 1988-07-09 | Toshiba Corp | 電子写真感光体 |
JPH0425048A (ja) * | 1990-05-16 | 1992-01-28 | Nec Corp | 半導体封止用容器 |
JP2621722B2 (ja) * | 1991-12-24 | 1997-06-18 | 三菱電機株式会社 | 半導体装置 |
JPH09275155A (ja) * | 1996-04-03 | 1997-10-21 | Hitachi Ltd | 半導体装置 |
JP2002118189A (ja) * | 2000-10-10 | 2002-04-19 | Nec Eng Ltd | 光学中空半導体パッケージの封止法 |
JP2005123606A (ja) * | 2003-09-25 | 2005-05-12 | Sanyo Electric Co Ltd | 混成集積回路装置およびその製造方法 |
-
2005
- 2005-07-28 JP JP2005218723A patent/JP4769973B2/ja not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62135464A (ja) * | 1985-12-10 | 1987-06-18 | Nippon Kayaku Co Ltd | フエニルピペラジン誘導体 |
JPS63165859A (ja) * | 1986-12-26 | 1988-07-09 | Toshiba Corp | 電子写真感光体 |
JPH0425048A (ja) * | 1990-05-16 | 1992-01-28 | Nec Corp | 半導体封止用容器 |
JP2621722B2 (ja) * | 1991-12-24 | 1997-06-18 | 三菱電機株式会社 | 半導体装置 |
JPH09275155A (ja) * | 1996-04-03 | 1997-10-21 | Hitachi Ltd | 半導体装置 |
JP2002118189A (ja) * | 2000-10-10 | 2002-04-19 | Nec Eng Ltd | 光学中空半導体パッケージの封止法 |
JP2005123606A (ja) * | 2003-09-25 | 2005-05-12 | Sanyo Electric Co Ltd | 混成集積回路装置およびその製造方法 |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009081195A (ja) * | 2007-09-25 | 2009-04-16 | Sanyo Electric Co Ltd | 発光モジュール |
US7746658B2 (en) | 2007-09-26 | 2010-06-29 | Sanyo Electric Co., Ltd. | Circuit device |
US8102655B2 (en) | 2007-09-27 | 2012-01-24 | Sanyo Semiconductor Co., Ltd. | Circuit device |
US7751194B2 (en) | 2007-09-27 | 2010-07-06 | Sanyo Electric Co., Ltd. | Circuit device, circuit module, and outdoor unit |
US7782628B2 (en) | 2007-09-27 | 2010-08-24 | Sanyo Electric Co., Ltd. | Circuit device |
EP2043417A3 (en) * | 2007-09-27 | 2010-10-13 | Sanyo Electric Co., Ltd. | Circuit device, circuit module, and outdoor unit |
EP2043417A2 (en) | 2007-09-27 | 2009-04-01 | Sanyo Electric Co., Ltd. | Circuit device, circuit module, and outdoor unit |
US8102670B2 (en) | 2007-09-27 | 2012-01-24 | Sanyo Semiconductor Co., Ltd. | Circuit device and method of manufacturing the same |
US8107255B2 (en) | 2007-09-27 | 2012-01-31 | Sanyo Semiconductor Co., Ltd. | Circuit device and method of manufacturing the same |
US8169784B2 (en) | 2007-09-27 | 2012-05-01 | Sanyo Semiconductor Co., Ltd. | Circuit module |
US8373197B2 (en) | 2008-09-29 | 2013-02-12 | Sanyo Semiconductor Co., Ltd. | Circuit device |
US9271397B2 (en) | 2010-09-24 | 2016-02-23 | Semiconductor Components Industries, Llc | Circuit device |
US9362205B2 (en) | 2010-09-24 | 2016-06-07 | Semiconductor Components Industries, Llc | Circuit device |
US9363894B2 (en) | 2010-09-24 | 2016-06-07 | Semiconductor Components Industries, Llc | Circuit device |
JP2017118058A (ja) * | 2015-12-25 | 2017-06-29 | 富士電機株式会社 | 半導体装置 |
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