JP2007019492A5 - - Google Patents
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- Publication number
- JP2007019492A5 JP2007019492A5 JP2006166847A JP2006166847A JP2007019492A5 JP 2007019492 A5 JP2007019492 A5 JP 2007019492A5 JP 2006166847 A JP2006166847 A JP 2006166847A JP 2006166847 A JP2006166847 A JP 2006166847A JP 2007019492 A5 JP2007019492 A5 JP 2007019492A5
- Authority
- JP
- Japan
- Prior art keywords
- growth
- optical waveguide
- waveguide core
- core mesa
- quantum well
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 claims 9
- 238000004519 manufacturing process Methods 0.000 claims 5
- 238000005253 cladding Methods 0.000 claims 4
- 239000013078 crystal Substances 0.000 claims 3
- 230000000737 periodic effect Effects 0.000 claims 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 2
- 229910052785 arsenic Inorganic materials 0.000 claims 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 2
- 229910052733 gallium Inorganic materials 0.000 claims 2
- 229910052738 indium Inorganic materials 0.000 claims 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 238000009826 distribution Methods 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/154,034 US7440666B2 (en) | 2004-02-25 | 2005-06-16 | Buried heterostucture device having integrated waveguide grating fabricated by single step MOCVD |
| US11/154034 | 2005-06-16 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007019492A JP2007019492A (ja) | 2007-01-25 |
| JP2007019492A5 true JP2007019492A5 (enExample) | 2009-07-30 |
| JP5280614B2 JP5280614B2 (ja) | 2013-09-04 |
Family
ID=37459368
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006166847A Expired - Fee Related JP5280614B2 (ja) | 2005-06-16 | 2006-06-16 | 単一のステップmocvdによって製造される導波格子を組み込んだ埋め込みヘテロ構造デバイス |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US7440666B2 (enExample) |
| EP (1) | EP1742314A3 (enExample) |
| JP (1) | JP5280614B2 (enExample) |
| KR (1) | KR101252469B1 (enExample) |
| CN (1) | CN1945365B (enExample) |
| TW (1) | TWI333306B (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7352942B2 (en) * | 2006-04-24 | 2008-04-01 | Massachusetts Institute Of Technology | Optical field concentrator using multiple low-index nano-layer configuration for CMOS compatible laser devices |
| WO2010068476A2 (en) | 2008-11-25 | 2010-06-17 | The Regents Of The University Of California | Ultra-low loss hollow core waveguide using high-contrast gratings |
| JP5373585B2 (ja) * | 2009-12-21 | 2013-12-18 | 日本電信電話株式会社 | 半導体レーザ及び電界吸収型変調器集積分布帰還型レーザ |
| JP4917157B2 (ja) * | 2010-02-26 | 2012-04-18 | Nttエレクトロニクス株式会社 | リッジ型半導体レーザ及びリッジ型半導体レーザの製造方法 |
| KR101758141B1 (ko) * | 2010-09-17 | 2017-07-14 | 삼성전자주식회사 | 수직 슬랩들을 포함하는 광전자 장치 |
| US8934512B2 (en) | 2011-12-08 | 2015-01-13 | Binoptics Corporation | Edge-emitting etched-facet lasers |
| RU2529450C2 (ru) * | 2012-07-04 | 2014-09-27 | Федеральное Государственное Бюджетное Образовательное Учреждение Высшего Профессионального Образования "Нижегородский Государственный Университет Им. Н.И. Лобачевского" | Полупроводниковый лазер (варианты) |
| US8927306B2 (en) * | 2013-02-28 | 2015-01-06 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Etched-facet lasers having windows with single-layer optical coatings |
| EP3417517A4 (en) * | 2016-05-05 | 2019-02-27 | MACOM Technology Solutions Holdings, Inc. | SEMICONDUCTOR LASER WITH AN ELECTRON BARRIER WITH LOW ALUMINUM CONTENT |
| TWI821302B (zh) * | 2018-11-12 | 2023-11-11 | 晶元光電股份有限公司 | 半導體元件及其封裝結構 |
| US11552217B2 (en) | 2018-11-12 | 2023-01-10 | Epistar Corporation | Semiconductor device |
| US11133649B2 (en) * | 2019-06-21 | 2021-09-28 | Palo Alto Research Center Incorporated | Index and gain coupled distributed feedback laser |
| WO2022073093A1 (en) * | 2020-10-05 | 2022-04-14 | National Research Council Of Canada | Corrugated buried heterostructure laser and method for fabricating the same |
| CN113668050A (zh) * | 2021-08-18 | 2021-11-19 | 福建中科光芯光电科技有限公司 | 激光辅助加热mocvd装置及其工作方法 |
| KR102825765B1 (ko) * | 2022-01-14 | 2025-06-27 | 한국전자통신연구원 | 광 집적 소자 및 그의 제조 방법 |
| CN114937924A (zh) * | 2022-05-30 | 2022-08-23 | 青岛海信宽带多媒体技术有限公司 | 一种激光芯片制备方法、激光芯片及光模块 |
| CN117613663B (zh) * | 2024-01-19 | 2024-05-10 | 武汉云岭光电股份有限公司 | 激光器及其制作方法 |
| CN117805968B (zh) * | 2024-02-29 | 2024-05-17 | 江苏南里台科技有限公司 | 一种光子芯片图案结构的制作方法及系统 |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5963288A (en) * | 1987-08-20 | 1999-10-05 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal device having sealant and spacers made from the same material |
| US5185289A (en) * | 1988-06-28 | 1993-02-09 | International Business Machines Corporation | Process for the selective growth of GaAs |
| JP2831667B2 (ja) | 1988-12-14 | 1998-12-02 | 株式会社東芝 | 半導体レーザ装置及びその製造方法 |
| JPH0834336B2 (ja) * | 1990-01-31 | 1996-03-29 | シャープ株式会社 | 半導体レーザ素子及びその製造方法 |
| JP3078004B2 (ja) | 1990-08-31 | 2000-08-21 | 株式会社東芝 | 半導体レーザの製造方法 |
| DE69207069T2 (de) * | 1991-05-31 | 1996-05-15 | Shinetsu Handotai Kk | Lichtemittierende Halbleitervorrichtung |
| FR2678775B1 (fr) * | 1991-07-05 | 1997-02-28 | Thomson Csf | Procede de realisation d'un dispositif optoelectronique |
| JPH05226781A (ja) * | 1992-02-12 | 1993-09-03 | Fujitsu Ltd | 半導体発光素子の製造方法 |
| JPH0817230B2 (ja) * | 1992-12-18 | 1996-02-21 | 工業技術院長 | 半導体の微細加工方法 |
| JP2746065B2 (ja) * | 1993-07-29 | 1998-04-28 | 日本電気株式会社 | 光半導体素子の製造方法 |
| JP2842292B2 (ja) | 1994-09-16 | 1998-12-24 | 日本電気株式会社 | 半導体光集積装置および製造方法 |
| JP3728332B2 (ja) * | 1995-04-24 | 2005-12-21 | シャープ株式会社 | 化合物半導体発光素子 |
| US5730798A (en) * | 1995-08-07 | 1998-03-24 | Motorola | Masking methods during semiconductor device fabrication |
| JP3227086B2 (ja) | 1996-02-01 | 2001-11-12 | 基弘 栗須 | テレビオンスクリーン表示装置 |
| JP2894285B2 (ja) * | 1996-07-03 | 1999-05-24 | 日本電気株式会社 | 分布帰還型半導体レーザおよびその製造方法 |
| US5952673A (en) | 1996-12-11 | 1999-09-14 | Fujitsu Limited | Optical semiconductor device including a multiple quantum well structure of an AlGaInAs/InP system |
| JPH10242577A (ja) * | 1997-02-26 | 1998-09-11 | Matsushita Electric Ind Co Ltd | 半導体レーザおよびその製造方法 |
| JP3104789B2 (ja) * | 1997-05-02 | 2000-10-30 | 日本電気株式会社 | 半導体光素子およびその製造方法 |
| CA2269872A1 (en) * | 1998-04-23 | 1999-10-23 | Nec Corporation | A method of manufacturing a semiconductor optical waveguide array and an array-structured semiconductor optical device |
| JP3336994B2 (ja) | 1998-04-23 | 2002-10-21 | 日本電気株式会社 | 半導体光導波路アレイの製造方法及びアレイ構造半導体光素子 |
| US6445723B1 (en) * | 1998-05-18 | 2002-09-03 | Jds Uniphase Corporation | Laser source with submicron aperture |
| JP3116350B2 (ja) * | 1998-06-16 | 2000-12-11 | 日本電気株式会社 | 半導体レーザの製造方法 |
| US6396861B1 (en) * | 1999-01-11 | 2002-05-28 | The Furukawa Electric Co., Ltd. | N-type modulation-doped multi quantum well semiconductor laser device |
| JP2000260714A (ja) * | 1999-03-08 | 2000-09-22 | Nec Corp | 有機金属気相成長による成膜方法及びこれを用いた半導体レーザの製造方法 |
| JP3267582B2 (ja) * | 1999-06-17 | 2002-03-18 | 日本電気株式会社 | 半導体レーザの製造方法 |
| JP3847038B2 (ja) * | 1999-11-26 | 2006-11-15 | Necエレクトロニクス株式会社 | 光半導体装置およびその製造方法 |
| JP4173445B2 (ja) | 2001-09-13 | 2008-10-29 | 学校法人 名城大学 | 窒化物半導体基板、その製造方法、およびそれを用いた半導体発光素子 |
| JP4002422B2 (ja) * | 2001-10-22 | 2007-10-31 | 日本電気株式会社 | 半導体素子およびその作製方法 |
| JP4111487B2 (ja) | 2002-04-05 | 2008-07-02 | ギガフォトン株式会社 | 極端紫外光源装置 |
| WO2005011076A1 (en) * | 2003-07-31 | 2005-02-03 | Bookham Technology Plc | Weakly guiding ridge waveguides with vertical gratings |
-
2005
- 2005-06-16 US US11/154,034 patent/US7440666B2/en not_active Expired - Fee Related
-
2006
- 2006-06-09 TW TW095120586A patent/TWI333306B/zh not_active IP Right Cessation
- 2006-06-12 EP EP06012066A patent/EP1742314A3/en not_active Withdrawn
- 2006-06-15 KR KR1020060054080A patent/KR101252469B1/ko not_active Expired - Fee Related
- 2006-06-16 JP JP2006166847A patent/JP5280614B2/ja not_active Expired - Fee Related
- 2006-06-16 CN CN2006101422932A patent/CN1945365B/zh not_active Expired - Fee Related
-
2008
- 2008-09-10 US US12/207,521 patent/US7941024B2/en not_active Expired - Fee Related
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