JP2006516363A5 - - Google Patents

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Publication number
JP2006516363A5
JP2006516363A5 JP2006500989A JP2006500989A JP2006516363A5 JP 2006516363 A5 JP2006516363 A5 JP 2006516363A5 JP 2006500989 A JP2006500989 A JP 2006500989A JP 2006500989 A JP2006500989 A JP 2006500989A JP 2006516363 A5 JP2006516363 A5 JP 2006516363A5
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JP
Japan
Prior art keywords
porous
fluorine
dielectric material
free plasma
cured
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2006500989A
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English (en)
Japanese (ja)
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JP2006516363A (ja
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Publication date
Priority claimed from US10/346,560 external-priority patent/US20030157267A1/en
Priority claimed from US10/627,894 external-priority patent/US7011868B2/en
Application filed filed Critical
Publication of JP2006516363A publication Critical patent/JP2006516363A/ja
Publication of JP2006516363A5 publication Critical patent/JP2006516363A5/ja
Withdrawn legal-status Critical Current

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JP2006500989A 2003-01-17 2004-01-16 多孔質低−ｋ材料用の無弗素プラズマ硬化方法 Withdrawn JP2006516363A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/346,560 US20030157267A1 (en) 2000-03-20 2003-01-17 Fluorine-free plasma curing process for porous low-k materials
US10/627,894 US7011868B2 (en) 2000-03-20 2003-07-24 Fluorine-free plasma curing process for porous low-k materials
PCT/US2004/001178 WO2004066374A1 (en) 2003-01-17 2004-01-16 Fluorine-free plasma curing process for porous low-k-materials

Publications (2)

Publication Number Publication Date
JP2006516363A JP2006516363A (ja) 2006-06-29
JP2006516363A5 true JP2006516363A5 (enExample) 2007-05-31

Family

ID=32775613

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006500989A Withdrawn JP2006516363A (ja) 2003-01-17 2004-01-16 多孔質低−ｋ材料用の無弗素プラズマ硬化方法

Country Status (6)

Country Link
US (1) US7011868B2 (enExample)
EP (1) EP1593149A1 (enExample)
JP (1) JP2006516363A (enExample)
KR (1) KR20050101167A (enExample)
TW (1) TW200508411A (enExample)
WO (1) WO2004066374A1 (enExample)

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US8053375B1 (en) * 2006-11-03 2011-11-08 Advanced Technology Materials, Inc. Super-dry reagent compositions for formation of ultra low k films
US20110097904A1 (en) * 2009-10-22 2011-04-28 Lam Research Corporation Method for repairing low-k dielectric damage
US7981699B2 (en) * 2009-10-22 2011-07-19 Lam Research Corporation Method for tunably repairing low-k dielectric damage
FR3018951B1 (fr) * 2014-03-18 2017-06-09 Commissariat Energie Atomique Procede de gravure d'un materiau dielectrique poreux
TWI785070B (zh) 2017-07-31 2022-12-01 美商陶氏有機矽公司 聚矽氧樹脂、相關方法、以及由其形成的膜
US20210265158A1 (en) * 2020-02-25 2021-08-26 Asm Ip Holding B.V. Method of forming low-k material layer, structure including the layer, and system for forming same

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