KR100650714B1 - 반도체소자의 저유전체막 형성방법 - Google Patents
반도체소자의 저유전체막 형성방법 Download PDFInfo
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- KR100650714B1 KR100650714B1 KR1020030038743A KR20030038743A KR100650714B1 KR 100650714 B1 KR100650714 B1 KR 100650714B1 KR 1020030038743 A KR1020030038743 A KR 1020030038743A KR 20030038743 A KR20030038743 A KR 20030038743A KR 100650714 B1 KR100650714 B1 KR 100650714B1
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- Prior art keywords
- low dielectric
- film
- semiconductor device
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- 238000000034 method Methods 0.000 title claims abstract description 47
- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 229920006254 polymer film Polymers 0.000 claims abstract description 21
- 239000002318 adhesion promoter Substances 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 238000009832 plasma treatment Methods 0.000 claims description 8
- 238000011065 in-situ storage Methods 0.000 abstract description 10
- 238000012986 modification Methods 0.000 abstract description 4
- 230000004048 modification Effects 0.000 abstract description 4
- 230000006866 deterioration Effects 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 229920000642 polymer Polymers 0.000 description 8
- 239000010410 layer Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000007667 floating Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000010943 off-gassing Methods 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
- H01L21/02332—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen into an oxide layer, e.g. changing SiO to SiON
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- Engineering & Computer Science (AREA)
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
Claims (9)
- 반도체 기판 상에 형성된 C-H-O 결합 구조를 갖는 저유전체 폴리머막을 처리하는 반도체 소자의 저유전체막 형성방법에 있어서,상기 저유전체 폴리머막을 SiH4/N2O 플라즈마를 이용하여 표면 처리하여 상기 저유전체 폴리머막 상에 C-H-N의 결합 구조를 갖는 접착 프로모터막을 형성하는 것을 특징으로 하는 반도체소자의 저유전체막 형성방법.
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 제 1 항에 있어서, 상기 플라즈마 처리시의 가스 유량으로 SiH4는 30∼120 sccm, N2O는 1000∼1200 sccm 이고, HF는 0.1∼1.0 KW, LF는 0.1∼2.0 KW 인 것을 특징으로 하는 반도체소자의 저유전체막 형성방법.
- 삭제
- 삭제
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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KR1020030038743A KR100650714B1 (ko) | 2003-06-16 | 2003-06-16 | 반도체소자의 저유전체막 형성방법 |
US10/744,530 US6955998B2 (en) | 2003-06-16 | 2003-12-22 | Method for forming low dielectric layer of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020030038743A KR100650714B1 (ko) | 2003-06-16 | 2003-06-16 | 반도체소자의 저유전체막 형성방법 |
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KR20040108010A KR20040108010A (ko) | 2004-12-23 |
KR100650714B1 true KR100650714B1 (ko) | 2006-11-27 |
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KR1020030038743A KR100650714B1 (ko) | 2003-06-16 | 2003-06-16 | 반도체소자의 저유전체막 형성방법 |
Country Status (2)
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US (1) | US6955998B2 (ko) |
KR (1) | KR100650714B1 (ko) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7011868B2 (en) * | 2000-03-20 | 2006-03-14 | Axcelis Technologies, Inc. | Fluorine-free plasma curing process for porous low-k materials |
WO2002001627A1 (fr) * | 2000-06-26 | 2002-01-03 | Hitachi, Ltd. | Dispositif a semi-conducteur et procede de fabrication associe |
US7112541B2 (en) * | 2004-05-06 | 2006-09-26 | Applied Materials, Inc. | In-situ oxide capping after CVD low k deposition |
US7189658B2 (en) * | 2005-05-04 | 2007-03-13 | Applied Materials, Inc. | Strengthening the interface between dielectric layers and barrier layers with an oxide layer of varying composition profile |
JP4892209B2 (ja) * | 2005-08-22 | 2012-03-07 | 日立化成デュポンマイクロシステムズ株式会社 | 半導体装置の製造方法 |
KR100759087B1 (ko) | 2007-02-23 | 2007-09-19 | 실리콘 디스플레이 (주) | 플렉시블 기판의 버퍼층 증착 방법 |
US8048813B2 (en) | 2008-12-01 | 2011-11-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of reducing delamination in the fabrication of small-pitch devices |
US20140117511A1 (en) | 2012-10-30 | 2014-05-01 | Infineon Technologies Ag | Passivation Layer and Method of Making a Passivation Layer |
US8846548B2 (en) | 2013-01-09 | 2014-09-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Post-passivation interconnect structure and methods for forming the same |
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JPH0735410B2 (ja) * | 1986-01-31 | 1995-04-19 | 三菱油化株式会社 | オレフィンの立体規則性重合用触媒 |
US5226967A (en) | 1992-05-14 | 1993-07-13 | Lam Research Corporation | Plasma apparatus including dielectric window for inducing a uniform electric field in a plasma chamber |
CA2088814A1 (en) * | 1992-10-05 | 1994-04-06 | Dane Kenton Parker | Process for improving the interfacial bonding between fibers and rubber |
US6083572A (en) | 1998-02-27 | 2000-07-04 | Hewlett-Packard Company | Organic low-dielectric constant films deposited by plasma enhanced chemical vapor deposition |
DE10031280A1 (de) * | 2000-06-27 | 2002-01-24 | Roth & Rauh Oberflaechentechni | Multifunktionale Mehrlagenschicht auf transparenten Kunststoffen und Verfahren zur ihrer Herstellung |
US6528432B1 (en) * | 2000-12-05 | 2003-03-04 | Advanced Micro Devices, Inc. | H2-or H2/N2-plasma treatment to prevent organic ILD degradation |
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2003
- 2003-06-16 KR KR1020030038743A patent/KR100650714B1/ko active IP Right Grant
- 2003-12-22 US US10/744,530 patent/US6955998B2/en not_active Expired - Lifetime
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Publication number | Publication date |
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KR20040108010A (ko) | 2004-12-23 |
US20040253388A1 (en) | 2004-12-16 |
US6955998B2 (en) | 2005-10-18 |
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