JP2006511083A - 半導体装置の製造方法並びにそのような方法で得られる半導体装置 - Google Patents
半導体装置の製造方法並びにそのような方法で得られる半導体装置 Download PDFInfo
- Publication number
- JP2006511083A JP2006511083A JP2004561869A JP2004561869A JP2006511083A JP 2006511083 A JP2006511083 A JP 2006511083A JP 2004561869 A JP2004561869 A JP 2004561869A JP 2004561869 A JP2004561869 A JP 2004561869A JP 2006511083 A JP2006511083 A JP 2006511083A
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor
- semiconductor material
- gate
- compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 107
- 238000000034 method Methods 0.000 title claims abstract description 51
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 51
- 229910052751 metal Inorganic materials 0.000 claims abstract description 45
- 239000002184 metal Substances 0.000 claims abstract description 45
- 150000001875 compounds Chemical class 0.000 claims abstract description 33
- 125000006850 spacer group Chemical group 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 15
- 239000010703 silicon Substances 0.000 claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 13
- 230000005669 field effect Effects 0.000 claims abstract description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 229910021332 silicide Inorganic materials 0.000 claims description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000003989 dielectric material Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 19
- 229910019001 CoSi Inorganic materials 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229920005591 polysilicon Polymers 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000010941 cobalt Substances 0.000 description 6
- 229910017052 cobalt Inorganic materials 0.000 description 6
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 230000008021 deposition Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
- H01L29/41783—Raised source or drain electrodes self aligned with the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28097—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a metallic silicide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
- H01L29/4975—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2 being a silicide layer, e.g. TiSi2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6653—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using the removal of at least part of spacer, e.g. disposable spacer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823835—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes silicided or salicided gate conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
- H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Die Bonding (AREA)
Abstract
Description
Claims (10)
- 半導体材料の半導体本体が設けられ、該半導体本体表面にソース領域及びドレイン領域を有し、前記ソース領域と前記ドレイン領域との間にゲート領域を有し、該ゲート領域は、ゲート誘電体によって前記半導体本体表面から分離されているさらなる半導体材料の半導体領域を備え、前記ゲート領域近傍に前記ソース領域と前記ドレイン領域とを形成する複数のスペーサを有し、前記ソース領域と前記ドレイン領域とに金属と前記半導体材料との化合物を形成するための金属層が設けられ、そして、前記ドレイン領域に金属と前記さらなる半導体材料との化合物を形成するためのさらなる金属層が設けられる電界効果型トランジスタを有する半導体装置の製造方法であって、
前記複数のスペーサが形成される前に、前記半導体領域に対して選択的にエッチングされうる材料の犠牲領域が前記半導体領域の上部に堆積され、
前記複数のスペーサが形成された後に、エッチングにより前記犠牲領域が除去され、
前記犠牲領域が除去された後に、前記ソース、ドレイン、ゲート領域を含む単一の金属層が堆積されることを特徴する方法。 - 前記半導体領域及び前記犠牲領域を備える前記ゲート領域が上部に存在する前記半導体本体の上部に誘電体材料の層を堆積し、そして、続いて、エッチングにより前記ゲート領域の上部及び両側から前記堆積された層を除去することにより前記複数のスペーサが形成されることを特徴する請求項1に記載の方法。
- 前記金属と前記さらなる半導体材料との化合物が形成される間に前記半導体領域が完全に消費されることを特徴する請求項1又は2に記載の方法。
- 前記半導体材料又は前記さらなる半導体材料を低濃度に有する中間化合物が得られる第一の熱工程と、前記半導体材料又は前記さらなる半導体材料をより高濃度に有する前記化合物に前記中間化合物が変化される第二の熱工程とにより、前記金属と前記半導体材料との間の前記化合物、及び、前記金属と前記さらなる半導体材料との間の前記化合物の形成が行われることを特徴する請求項1、2又は3に記載の方法。
- 前記二熱工程の間に、前記中間化合物を形成する時に反応してない前記金属層の一部分がエッチングにより除去されることを特徴する請求項4に記載の方法。
- 前記二熱工程の間に、前記半導体本体表面に前記さらなる半導体材料の層が堆積されることを特徴する請求項4又は5に記載の方法。
- 前記第二の熱工程の後に、前記化合物を形成する時に反応してない前記さらなる半導体材料の層の一部分がエッチングにより除去されることを特徴する請求項6に記載の方法。
- 前記金属と前記半導体材料との前記化合物、及び、前記金属と前記さらなる半導体材料との前記化合物の形成の後に前記複数のスペーサが除去されることを特徴する請求項1乃至7いずれかに記載の方法。
- 前記半導体材料並びに前記さらなる半導体材料のためにシリコンが選ばれ、前記中間化合物と、前記金属と前記半導体材料との化合物並びに前記金属と前記さらなる半導体材料との化合物とのために金属シリサイドが選ばれることを特徴する請求項1乃至8いずれかに記載の方法。
- 請求項1乃至9いずれかに記載の方法により得られた電界効果型トランジスタを備えた半導体装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02080508 | 2002-12-20 | ||
PCT/IB2003/006009 WO2004057659A1 (en) | 2002-12-20 | 2003-12-15 | Method of manufacturing a semiconductor device and semiconductor device obtained with such a method |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2006511083A true JP2006511083A (ja) | 2006-03-30 |
Family
ID=32668807
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004561869A Pending JP2006511083A (ja) | 2002-12-20 | 2003-12-15 | 半導体装置の製造方法並びにそのような方法で得られる半導体装置 |
Country Status (8)
Country | Link |
---|---|
US (1) | US20060152086A1 (ja) |
EP (1) | EP1579488B1 (ja) |
JP (1) | JP2006511083A (ja) |
KR (1) | KR20050084382A (ja) |
CN (1) | CN100390939C (ja) |
AT (1) | ATE536634T1 (ja) |
AU (1) | AU2003303273A1 (ja) |
WO (1) | WO2004057659A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009545168A (ja) * | 2006-07-28 | 2009-12-17 | インターナショナル・ビジネス・マシーンズ・コーポレーション | ゲート誘電体上に完全シリサイド化(fusi)ゲート電極を選択的に形成する方法、及びその完全シリサイド化ゲート電極を有する半導体デバイス |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100481185B1 (ko) | 2003-07-10 | 2005-04-07 | 삼성전자주식회사 | 완전 게이트 실리사이드화 공정을 사용하여 모스트랜지스터를 제조하는 방법 |
US7235472B2 (en) | 2004-11-12 | 2007-06-26 | Infineon Technologies Ag | Method of making fully silicided gate electrode |
JP4473741B2 (ja) * | 2005-01-27 | 2010-06-02 | 株式会社東芝 | 半導体装置および半導体装置の製造方法 |
US7399702B2 (en) * | 2005-02-01 | 2008-07-15 | Infineon Technologies Ag | Methods of forming silicide |
US7183169B1 (en) * | 2005-03-07 | 2007-02-27 | Advanced Micro Devices, Inc. | Method and arrangement for reducing source/drain resistance with epitaxial growth |
US7737019B1 (en) * | 2005-03-08 | 2010-06-15 | Spansion Llc | Method for containing a silicided gate within a sidewall spacer in integrated circuit technology |
US7544553B2 (en) | 2005-03-30 | 2009-06-09 | Infineon Technologies Ag | Integration scheme for fully silicided gate |
EP1744351A3 (en) * | 2005-07-11 | 2008-11-26 | Interuniversitair Microelektronica Centrum ( Imec) | Method for forming a fully silicided gate MOSFET and devices obtained thereof |
JP2007027727A (ja) * | 2005-07-11 | 2007-02-01 | Interuniv Micro Electronica Centrum Vzw | フルシリサイド化ゲートmosfetの形成方法及び該方法により得られるデバイス |
WO2007026677A1 (ja) * | 2005-09-01 | 2007-03-08 | Nec Corporation | 半導体装置の製造方法 |
KR20140131671A (ko) * | 2013-05-06 | 2014-11-14 | 에스케이하이닉스 주식회사 | 병렬 구조의 가변 저항 소자 |
CN105244276B (zh) * | 2014-06-12 | 2018-08-21 | 中芯国际集成电路制造(上海)有限公司 | 一种FinFET及其制造方法、电子装置 |
CN113690134A (zh) * | 2020-05-19 | 2021-11-23 | 中国科学院微电子研究所 | 一种金属硅化物的制备方法、半导体器件、电子设备 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09186327A (ja) * | 1995-12-29 | 1997-07-15 | Lg Semicon Co Ltd | 半導体素子の製造方法 |
JPH11284179A (ja) * | 1998-03-30 | 1999-10-15 | Sony Corp | 半導体装置およびその製造方法 |
JP2000252462A (ja) * | 1999-03-01 | 2000-09-14 | Toshiba Corp | Mis型半導体装置及びその製造方法 |
JP2001189284A (ja) * | 1999-12-27 | 2001-07-10 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2001358156A (ja) * | 2000-05-11 | 2001-12-26 | Internatl Business Mach Corp <Ibm> | 薄膜soimosfetの低抵抗コンタクトの自己整合シリサイド・プロセス |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR920002350B1 (ko) * | 1987-05-21 | 1992-03-21 | 마쯔시다덴기산교 가부시기가이샤 | 반도체장치의 제조방법 |
US5352631A (en) * | 1992-12-16 | 1994-10-04 | Motorola, Inc. | Method for forming a transistor having silicided regions |
JP2848757B2 (ja) * | 1993-03-19 | 1999-01-20 | シャープ株式会社 | 電界効果トランジスタおよびその製造方法 |
JPH07135317A (ja) * | 1993-04-22 | 1995-05-23 | Texas Instr Inc <Ti> | 自己整合型シリサイドゲート |
US5753557A (en) * | 1996-10-07 | 1998-05-19 | Vanguard International Semiconductor Company | Bridge-free self aligned silicide process |
JP3827839B2 (ja) * | 1997-11-27 | 2006-09-27 | 富士通株式会社 | 半導体装置の製造方法 |
TW418448B (en) * | 1998-02-03 | 2001-01-11 | United Microelectronics Corp | A method of preventing side metal silicide growth to avoid short-circuit device and its gate structure |
US6348390B1 (en) * | 1998-02-19 | 2002-02-19 | Acer Semiconductor Manufacturing Corp. | Method for fabricating MOSFETS with a recessed self-aligned silicide contact and extended source/drain junctions |
US6074922A (en) * | 1998-03-13 | 2000-06-13 | Taiwan Semiconductor Manufacturing Company | Enhanced structure for salicide MOSFET |
US6284612B1 (en) * | 1998-03-25 | 2001-09-04 | Texas Instruments - Acer Incorporated | Process to fabricate ultra-short channel MOSFETs with self-aligned silicide contact |
US6069044A (en) * | 1998-03-30 | 2000-05-30 | Texas Instruments-Acer Incorporated | Process to fabricate ultra-short channel nMOSFETS with self-aligned silicide contact |
US6204103B1 (en) * | 1998-09-18 | 2001-03-20 | Intel Corporation | Process to make complementary silicide metal gates for CMOS technology |
US6211000B1 (en) * | 1999-01-04 | 2001-04-03 | Advanced Micro Devices | Method of making high performance mosfets having high conductivity gate conductors |
US6271133B1 (en) * | 1999-04-12 | 2001-08-07 | Chartered Semiconductor Manufacturing Ltd. | Optimized Co/Ti-salicide scheme for shallow junction deep sub-micron device fabrication |
JP3554514B2 (ja) * | 1999-12-03 | 2004-08-18 | 松下電器産業株式会社 | 半導体装置及びその製造方法 |
US6620718B1 (en) * | 2000-04-25 | 2003-09-16 | Advanced Micro Devices, Inc. | Method of forming metal silicide regions on a gate electrode and on the source/drain regions of a semiconductor device |
US6423634B1 (en) * | 2000-04-25 | 2002-07-23 | Advanced Micro Devices, Inc. | Method of forming low resistance metal silicide region on a gate electrode of a transistor |
US6365468B1 (en) * | 2000-06-21 | 2002-04-02 | United Microelectronics Corp. | Method for forming doped p-type gate with anti-reflection layer |
DE10033367C2 (de) * | 2000-07-08 | 2002-04-25 | Porsche Ag | Brennkraftmaschine, insbesondere für Motorräder |
US7067379B2 (en) * | 2004-01-08 | 2006-06-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Silicide gate transistors and method of manufacture |
-
2003
- 2003-12-15 CN CNB2003801064123A patent/CN100390939C/zh not_active Expired - Fee Related
- 2003-12-15 JP JP2004561869A patent/JP2006511083A/ja active Pending
- 2003-12-15 EP EP20030813688 patent/EP1579488B1/en not_active Expired - Lifetime
- 2003-12-15 AT AT03813688T patent/ATE536634T1/de active
- 2003-12-15 AU AU2003303273A patent/AU2003303273A1/en not_active Abandoned
- 2003-12-15 KR KR1020057011201A patent/KR20050084382A/ko not_active Application Discontinuation
- 2003-12-15 US US10/539,224 patent/US20060152086A1/en not_active Abandoned
- 2003-12-15 WO PCT/IB2003/006009 patent/WO2004057659A1/en active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09186327A (ja) * | 1995-12-29 | 1997-07-15 | Lg Semicon Co Ltd | 半導体素子の製造方法 |
JPH11284179A (ja) * | 1998-03-30 | 1999-10-15 | Sony Corp | 半導体装置およびその製造方法 |
JP2000252462A (ja) * | 1999-03-01 | 2000-09-14 | Toshiba Corp | Mis型半導体装置及びその製造方法 |
JP2001189284A (ja) * | 1999-12-27 | 2001-07-10 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2001358156A (ja) * | 2000-05-11 | 2001-12-26 | Internatl Business Mach Corp <Ibm> | 薄膜soimosfetの低抵抗コンタクトの自己整合シリサイド・プロセス |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009545168A (ja) * | 2006-07-28 | 2009-12-17 | インターナショナル・ビジネス・マシーンズ・コーポレーション | ゲート誘電体上に完全シリサイド化(fusi)ゲート電極を選択的に形成する方法、及びその完全シリサイド化ゲート電極を有する半導体デバイス |
Also Published As
Publication number | Publication date |
---|---|
US20060152086A1 (en) | 2006-07-13 |
CN1726582A (zh) | 2006-01-25 |
KR20050084382A (ko) | 2005-08-26 |
EP1579488B1 (en) | 2011-12-07 |
CN100390939C (zh) | 2008-05-28 |
ATE536634T1 (de) | 2011-12-15 |
EP1579488A1 (en) | 2005-09-28 |
WO2004057659A1 (en) | 2004-07-08 |
AU2003303273A1 (en) | 2004-07-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7397091B2 (en) | SiGe nickel barrier structure employed in a CMOS device to prevent excess diffusion of nickel used in the silicide material | |
CN108470733B (zh) | 半导体装置制造方法 | |
US7888195B2 (en) | Metal gate transistor and method for fabricating the same | |
US6908850B2 (en) | Structure and method for silicided metal gate transistors | |
US7545006B2 (en) | CMOS devices with graded silicide regions | |
US20060105527A1 (en) | Semiconductor device and manufacturing method therefor | |
US20120299101A1 (en) | Thin body silicon-on-insulator transistor with borderless self-aligned contacts | |
WO2011066746A1 (zh) | 一种半导体器件及其制造方法 | |
JP2006511083A (ja) | 半導体装置の製造方法並びにそのような方法で得られる半導体装置 | |
WO2003021662A1 (en) | Improved high k-dielectrics using nickel silicide | |
US7338910B2 (en) | Method of fabricating semiconductor devices and method of removing a spacer | |
US6268253B1 (en) | Forming a removable spacer of uniform width on sidewalls of a gate of a field effect transistor during a differential rapid thermal anneal process | |
US6258682B1 (en) | Method of making ultra shallow junction MOSFET | |
US7498264B2 (en) | Method to obtain fully silicided poly gate | |
KR100549006B1 (ko) | 완전한 실리사이드 게이트를 갖는 모스 트랜지스터 제조방법 | |
US7341933B2 (en) | Method for manufacturing a silicided gate electrode using a buffer layer | |
US7078347B2 (en) | Method for forming MOS transistors with improved sidewall structures | |
KR100549001B1 (ko) | 완전한 실리사이드 게이트를 갖는 모스 트랜지스터 제조방법 | |
KR100588780B1 (ko) | 반도체 소자의 제조 방법 | |
KR100620235B1 (ko) | 타이타늄 실리사이드 제조 방법 | |
JP4602138B2 (ja) | 半導体装置の製造方法 | |
KR100545902B1 (ko) | 반도체 소자의 제조 방법 | |
JP4957040B2 (ja) | 半導体装置、および半導体装置の製造方法。 | |
KR100628214B1 (ko) | 반도체 소자의 제조방법 | |
JP2005268272A (ja) | 半導体装置およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20061213 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20090121 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20090310 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100205 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20100702 |