JP2006508537A - オプトエレクトロニクス素子 - Google Patents
オプトエレクトロニクス素子 Download PDFInfo
- Publication number
- JP2006508537A JP2006508537A JP2004556018A JP2004556018A JP2006508537A JP 2006508537 A JP2006508537 A JP 2006508537A JP 2004556018 A JP2004556018 A JP 2004556018A JP 2004556018 A JP2004556018 A JP 2004556018A JP 2006508537 A JP2006508537 A JP 2006508537A
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- 230000005693 optoelectronics Effects 0.000 title claims abstract description 22
- 239000000463 material Substances 0.000 claims description 15
- 238000005219 brazing Methods 0.000 claims description 10
- 230000005855 radiation Effects 0.000 claims description 7
- 238000005476 soldering Methods 0.000 claims description 2
- 230000000930 thermomechanical effect Effects 0.000 abstract description 6
- 238000000034 method Methods 0.000 description 7
- 239000004020 conductor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000001746 injection moulding Methods 0.000 description 3
- 208000037408 Device failure Diseases 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
Claims (13)
- オプトエレクトロニクス素子において、
オプトエレクトロニクス式のチップ(1)を備えており、
中央領域(3)と接続部(41,42,43,44)とを有するチップ支持体(2)を備えており、中央領域(3)にチップ(1)が取り付けられており、接続部(41,42,43,44)が、チップ支持体(2)の中央領域(3)から出発して外向きに延びており、
チップ(1)と、チップ支持体(2)の一部とが、ボディ(5)によって包囲されており、
チップ(1)とチップ支持体(2)との間のコンタクト面に対する、ボディ(5)と、接続部(41,42,43,44)の長手中央軸線(61,62,63,64)との投影が、それぞれチップ(1)の中心点(8)の投影に対して実質的に点対称になっていることを特徴とする、オプトエレクトロニクス式のチップ。 - 接続部が、チップ支持体から出発して実質的に一平面上を外向きに延びている、請求項1記載の素子。
- チップとチップ支持体との間のコンタクト面が、チップ支持体に対するチップの取付平面によって形成されている、請求項1または2記載の素子。
- ボディ(5)が、放射透過性の材料から形成されている、請求項1から3までのいずれか1項記載の素子。
- ボディ(5)が、ケーシング(11)を備えており、該ケーシング(11)が、凹所(12)を備えており、
凹所(12)に、放射透過性のカバー(13)が配置されており、該カバー(13)にチップ(1)が埋め込まれており、
チップ(1)とチップ支持体(1)との間のコンタクト平面に対するカバー(13)の投影が、チップ(1)の中心点(8)に対して実質的に点対称になっている、請求項1から3までのいずれか1項記載の素子。 - チップ(1)とチップ支持体(2)との間のコンタクト平面に対する、カバーと凹所(12)の底部との間のコンタクト面(14)の投影が、チップ(1)の中心点(8)に対して実質的に点対称になっている、請求項5記載の素子。
- チップ(1)とチップ支持体(2)との間のコンタクト平面に対するチップ支持体(2)の投影が、チップ(1)の中心点(8)に対して実質的に点対称になっている、請求項1から6までのいずれか1項記載の素子。
- チップ支持体(2)から分離した別の接続部(48,49)が設けられており、チップ(1)とチップ支持体(2)との間のコンタクト平面に対する別の接続部(48,49)の投影が、チップ(1)の中心点(8)に対して実質的に点対称になっている、請求項1から7までのいずれか1項記載の素子。
- ボディ(5)にチップ支持体(2)を固定するための複数の手段が設けられており、これらの固定手段が、非対称的に配置されている、請求項1から8までのいずれか1項記載の素子。
- ボディ(5)にチップ支持体(2)を固定するための複数の手段が、チップ支持体(2)に沿って均等に分配されている、請求項9記載の素子。
- ボディ(5)にチップ支持体(2)を固定するための複数の手段が設けられており、チップ(1)とチップ支持体(2)との間のコンタクト平面に対する固定手段の投影が、チップ(1)の中心点(8)に対して実質的に点対称になっている、請求項1から8までのいずれか1項記載の素子。
- 各接続部(41,42,43,44)が、ボディ(5)の下面にろう接面を備えている、請求項1から11までのいずれか1項記載の素子。
- チップ支持体(2)のろう接面(16)が、プリント基板(17)の導電性の面(18)にろう接されている、請求項1から12までのいずれか1項記載の素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10255932A DE10255932A1 (de) | 2002-11-29 | 2002-11-29 | Optoelektronisches Bauelement |
PCT/DE2003/003923 WO2004051757A2 (de) | 2002-11-29 | 2003-11-27 | Optoelektronisches bauelement |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2006508537A true JP2006508537A (ja) | 2006-03-09 |
Family
ID=32318837
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004556018A Pending JP2006508537A (ja) | 2002-11-29 | 2003-11-27 | オプトエレクトロニクス素子 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7271425B2 (ja) |
EP (1) | EP1565948B1 (ja) |
JP (1) | JP2006508537A (ja) |
CN (1) | CN100565943C (ja) |
DE (1) | DE10255932A1 (ja) |
TW (1) | TWI244217B (ja) |
WO (1) | WO2004051757A2 (ja) |
Cited By (13)
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JP2013004905A (ja) * | 2011-06-21 | 2013-01-07 | Mitsubishi Chemicals Corp | 半導体発光装置用パッケージ及び半導体発光装置 |
JP2013211579A (ja) * | 2007-10-01 | 2013-10-10 | Everlight Electronics Co Ltd | 発光ダイオード装置 |
US8735920B2 (en) | 2006-07-31 | 2014-05-27 | Cree, Inc. | Light emitting diode package with optical element |
US8748915B2 (en) | 2006-04-24 | 2014-06-10 | Cree Hong Kong Limited | Emitter package with angled or vertical LED |
US8791471B2 (en) | 2008-11-07 | 2014-07-29 | Cree Hong Kong Limited | Multi-chip light emitting diode modules |
US8866169B2 (en) | 2007-10-31 | 2014-10-21 | Cree, Inc. | LED package with increased feature sizes |
US9035439B2 (en) | 2006-03-28 | 2015-05-19 | Cree Huizhou Solid State Lighting Company Limited | Apparatus, system and method for use in mounting electronic elements |
US9070850B2 (en) | 2007-10-31 | 2015-06-30 | Cree, Inc. | Light emitting diode package and method for fabricating same |
US9601670B2 (en) | 2014-07-11 | 2017-03-21 | Cree, Inc. | Method to form primary optic with variable shapes and/or geometries without a substrate |
US9711703B2 (en) | 2007-02-12 | 2017-07-18 | Cree Huizhou Opto Limited | Apparatus, system and method for use in mounting electronic elements |
US9722158B2 (en) | 2009-01-14 | 2017-08-01 | Cree Huizhou Solid State Lighting Company Limited | Aligned multiple emitter package |
US10256385B2 (en) | 2007-10-31 | 2019-04-09 | Cree, Inc. | Light emitting die (LED) packages and related methods |
US10622522B2 (en) | 2014-09-05 | 2020-04-14 | Theodore Lowes | LED packages with chips having insulated surfaces |
Families Citing this family (32)
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US7397067B2 (en) * | 2003-12-31 | 2008-07-08 | Intel Corporation | Microdisplay packaging system |
US7821023B2 (en) | 2005-01-10 | 2010-10-26 | Cree, Inc. | Solid state lighting component |
US9793247B2 (en) | 2005-01-10 | 2017-10-17 | Cree, Inc. | Solid state lighting component |
US8669572B2 (en) | 2005-06-10 | 2014-03-11 | Cree, Inc. | Power lamp package |
JP5130680B2 (ja) * | 2006-03-02 | 2013-01-30 | 日亜化学工業株式会社 | 半導体装置およびその形成方法 |
US11210971B2 (en) | 2009-07-06 | 2021-12-28 | Cree Huizhou Solid State Lighting Company Limited | Light emitting diode display with tilted peak emission pattern |
US7635915B2 (en) * | 2006-04-26 | 2009-12-22 | Cree Hong Kong Limited | Apparatus and method for use in mounting electronic elements |
US8367945B2 (en) | 2006-08-16 | 2013-02-05 | Cree Huizhou Opto Limited | Apparatus, system and method for use in mounting electronic elements |
DE102007005630B4 (de) * | 2007-02-05 | 2019-08-08 | Infineon Technologies Ag | Sensorchip-Modul und Verfahren zur Herstellung eines Sensorchip-Moduls |
USD615504S1 (en) | 2007-10-31 | 2010-05-11 | Cree, Inc. | Emitter package |
USD633631S1 (en) | 2007-12-14 | 2011-03-01 | Cree Hong Kong Limited | Light source of light emitting diode |
USD634863S1 (en) | 2008-01-10 | 2011-03-22 | Cree Hong Kong Limited | Light source of light emitting diode |
US8049230B2 (en) | 2008-05-16 | 2011-11-01 | Cree Huizhou Opto Limited | Apparatus and system for miniature surface mount devices |
JP5464825B2 (ja) * | 2008-07-23 | 2014-04-09 | ローム株式会社 | Ledモジュール |
US20100059783A1 (en) * | 2008-09-08 | 2010-03-11 | Harry Chandra | Light Emitting Chip Package With Metal Leads For Enhanced Heat Dissipation |
US9425172B2 (en) | 2008-10-24 | 2016-08-23 | Cree, Inc. | Light emitter array |
JP5340763B2 (ja) * | 2009-02-25 | 2013-11-13 | ローム株式会社 | Ledランプ |
US8415692B2 (en) | 2009-07-06 | 2013-04-09 | Cree, Inc. | LED packages with scattering particle regions |
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DE102013110114A1 (de) | 2013-09-13 | 2015-04-02 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
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-
2002
- 2002-11-29 DE DE10255932A patent/DE10255932A1/de not_active Withdrawn
-
2003
- 2003-11-27 EP EP03767463.7A patent/EP1565948B1/de not_active Expired - Lifetime
- 2003-11-27 CN CN200380104351.7A patent/CN100565943C/zh not_active Expired - Lifetime
- 2003-11-27 WO PCT/DE2003/003923 patent/WO2004051757A2/de active Application Filing
- 2003-11-27 TW TW092133322A patent/TWI244217B/zh not_active IP Right Cessation
- 2003-11-27 US US10/535,794 patent/US7271425B2/en not_active Expired - Lifetime
- 2003-11-27 JP JP2004556018A patent/JP2006508537A/ja active Pending
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9035439B2 (en) | 2006-03-28 | 2015-05-19 | Cree Huizhou Solid State Lighting Company Limited | Apparatus, system and method for use in mounting electronic elements |
US8748915B2 (en) | 2006-04-24 | 2014-06-10 | Cree Hong Kong Limited | Emitter package with angled or vertical LED |
US8735920B2 (en) | 2006-07-31 | 2014-05-27 | Cree, Inc. | Light emitting diode package with optical element |
US9711703B2 (en) | 2007-02-12 | 2017-07-18 | Cree Huizhou Opto Limited | Apparatus, system and method for use in mounting electronic elements |
JP2013211579A (ja) * | 2007-10-01 | 2013-10-10 | Everlight Electronics Co Ltd | 発光ダイオード装置 |
US8866169B2 (en) | 2007-10-31 | 2014-10-21 | Cree, Inc. | LED package with increased feature sizes |
US9070850B2 (en) | 2007-10-31 | 2015-06-30 | Cree, Inc. | Light emitting diode package and method for fabricating same |
US10256385B2 (en) | 2007-10-31 | 2019-04-09 | Cree, Inc. | Light emitting die (LED) packages and related methods |
US10892383B2 (en) | 2007-10-31 | 2021-01-12 | Cree, Inc. | Light emitting diode package and method for fabricating same |
US8791471B2 (en) | 2008-11-07 | 2014-07-29 | Cree Hong Kong Limited | Multi-chip light emitting diode modules |
US9722158B2 (en) | 2009-01-14 | 2017-08-01 | Cree Huizhou Solid State Lighting Company Limited | Aligned multiple emitter package |
JP2013004905A (ja) * | 2011-06-21 | 2013-01-07 | Mitsubishi Chemicals Corp | 半導体発光装置用パッケージ及び半導体発光装置 |
US9601670B2 (en) | 2014-07-11 | 2017-03-21 | Cree, Inc. | Method to form primary optic with variable shapes and/or geometries without a substrate |
US10622522B2 (en) | 2014-09-05 | 2020-04-14 | Theodore Lowes | LED packages with chips having insulated surfaces |
Also Published As
Publication number | Publication date |
---|---|
WO2004051757A2 (de) | 2004-06-17 |
CN1717813A (zh) | 2006-01-04 |
EP1565948B1 (de) | 2016-03-16 |
WO2004051757A3 (de) | 2004-12-23 |
CN100565943C (zh) | 2009-12-02 |
DE10255932A1 (de) | 2004-06-17 |
US20060049477A1 (en) | 2006-03-09 |
TW200419828A (en) | 2004-10-01 |
EP1565948A2 (de) | 2005-08-24 |
TWI244217B (en) | 2005-11-21 |
US7271425B2 (en) | 2007-09-18 |
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