JP2006508242A5 - - Google Patents

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Publication number
JP2006508242A5
JP2006508242A5 JP2004555942A JP2004555942A JP2006508242A5 JP 2006508242 A5 JP2006508242 A5 JP 2006508242A5 JP 2004555942 A JP2004555942 A JP 2004555942A JP 2004555942 A JP2004555942 A JP 2004555942A JP 2006508242 A5 JP2006508242 A5 JP 2006508242A5
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JP
Japan
Prior art keywords
processing
predetermined
substrate
plasma
distribution
Prior art date
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Granted
Application number
JP2004555942A
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English (en)
Japanese (ja)
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JP2006508242A (ja
JP4741241B2 (ja
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Priority claimed from PCT/CH2003/000744 external-priority patent/WO2004050943A2/de
Publication of JP2006508242A publication Critical patent/JP2006508242A/ja
Publication of JP2006508242A5 publication Critical patent/JP2006508242A5/ja
Application granted granted Critical
Publication of JP4741241B2 publication Critical patent/JP4741241B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004555942A 2002-11-29 2003-11-13 基板表面のプラズマ処理方法 Expired - Fee Related JP4741241B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CH2019/02 2002-11-29
CH20192002 2002-11-29
PCT/CH2003/000744 WO2004050943A2 (de) 2002-11-29 2003-11-13 Verfahren zur plasmabehandlung von oberflächen in vakumm und anlage hierfür

Publications (3)

Publication Number Publication Date
JP2006508242A JP2006508242A (ja) 2006-03-09
JP2006508242A5 true JP2006508242A5 (https=) 2007-01-25
JP4741241B2 JP4741241B2 (ja) 2011-08-03

Family

ID=32399969

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004555942A Expired - Fee Related JP4741241B2 (ja) 2002-11-29 2003-11-13 基板表面のプラズマ処理方法

Country Status (10)

Country Link
US (2) US7138343B2 (https=)
EP (1) EP1565929B1 (https=)
JP (1) JP4741241B2 (https=)
KR (1) KR101177127B1 (https=)
CN (1) CN1745453B (https=)
AT (1) ATE375600T1 (https=)
AU (1) AU2003277791A1 (https=)
DE (1) DE50308371D1 (https=)
TW (1) TWI325149B (https=)
WO (1) WO2004050943A2 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7264850B1 (en) * 1992-12-28 2007-09-04 Semiconductor Energy Laboratory Co., Ltd. Process for treating a substrate with a plasma
US7138343B2 (en) * 2002-11-29 2006-11-21 Oc Oerlikon Balzers Ag Method of producing a substrate with a surface treated by a vacuum treatment process, use of said method for the production of coated workpieces and plasma treatment chamber
DE102006036403B4 (de) * 2006-08-02 2009-11-19 Von Ardenne Anlagentechnik Gmbh Verfahren zur Beschichtung eines Substrats mit einer definierten Schichtdickenverteilung
US20090078199A1 (en) * 2007-09-21 2009-03-26 Innovation Vacuum Technology Co., Ltd. Plasma enhanced chemical vapor deposition apparatus
WO2009072081A1 (en) * 2007-12-07 2009-06-11 Oc Oerlikon Balzers Ag A method of magnetron sputtering and a method for determining a power modulation compensation function for a power supply applied to a magnetron sputtering source
CN103094048B (zh) * 2011-11-01 2015-08-19 凌嘉科技股份有限公司 可位移调整磁控管的装置
US20170040140A1 (en) * 2015-08-06 2017-02-09 Seagate Technology Llc Magnet array for plasma-enhanced chemical vapor deposition
DE102018213534A1 (de) * 2018-08-10 2020-02-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zur Herstellung von Schichten mit verbesserter Uniformität bei Beschichtungsanlagen mit horizontal rotierender Substratführung

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59175125A (ja) * 1983-03-24 1984-10-03 Toshiba Corp ドライエツチング装置
US4668365A (en) * 1984-10-25 1987-05-26 Applied Materials, Inc. Apparatus and method for magnetron-enhanced plasma-assisted chemical vapor deposition
US4858556A (en) * 1986-09-15 1989-08-22 Siebert Jerome F Method and apparatus for physical vapor deposition of thin films
JPH0629249A (ja) * 1991-10-08 1994-02-04 Ulvac Japan Ltd プラズマエッチング装置
JP3362432B2 (ja) * 1992-10-31 2003-01-07 ソニー株式会社 プラズマ処理方法及びプラズマ処理装置
US5500077A (en) * 1993-03-10 1996-03-19 Sumitomo Electric Industries, Ltd. Method of polishing/flattening diamond
JP3250768B2 (ja) * 1993-09-28 2002-01-28 アルプス電気株式会社 ダイヤモンド状炭素膜の形成方法、磁気ヘッドの製造方法および磁気ディスクの製造方法
US5529671A (en) * 1994-07-27 1996-06-25 Litton Systems, Inc. Apparatus and method for ion beam polishing and for in-situ ellipsometric deposition of ion beam films
US5945008A (en) * 1994-09-29 1999-08-31 Sony Corporation Method and apparatus for plasma control
JPH09256149A (ja) * 1996-03-22 1997-09-30 Tokyo Electron Ltd スパッタリング装置およびスパッタリング方法
JP3744089B2 (ja) * 1996-12-02 2006-02-08 富士電機ホールディングス株式会社 マグネトロンスパッタ成膜装置および成膜方法
JPH11176815A (ja) * 1997-12-15 1999-07-02 Ricoh Co Ltd ドライエッチングの終点判定方法およびドライエッチング装置
US6290825B1 (en) * 1999-02-12 2001-09-18 Applied Materials, Inc. High-density plasma source for ionized metal deposition
US6254745B1 (en) * 1999-02-19 2001-07-03 Tokyo Electron Limited Ionized physical vapor deposition method and apparatus with magnetic bucket and concentric plasma and material source
US6312568B2 (en) * 1999-12-07 2001-11-06 Applied Materials, Inc. Two-step AIN-PVD for improved film properties
US6767475B2 (en) * 2000-05-25 2004-07-27 Atomic Telecom Chemical-organic planarization process for atomically smooth interfaces
US6413382B1 (en) * 2000-11-03 2002-07-02 Applied Materials, Inc. Pulsed sputtering with a small rotating magnetron
EP1254970A1 (de) * 2001-05-03 2002-11-06 Unaxis Balzers Aktiengesellschaft Magnetronsputterquelle mit mehrteiligem Target
SE525231C2 (sv) * 2001-06-14 2005-01-11 Chemfilt R & D Ab Förfarande och anordning för att alstra plasma
US20030164998A1 (en) * 2002-03-01 2003-09-04 The Regents Of The University Of California Ion-assisted deposition techniques for the planarization of topological defects
US7381661B2 (en) * 2002-10-15 2008-06-03 Oc Oerlikon Balzers Ag Method for the production of a substrate with a magnetron sputter coating and unit for the same
US7138343B2 (en) * 2002-11-29 2006-11-21 Oc Oerlikon Balzers Ag Method of producing a substrate with a surface treated by a vacuum treatment process, use of said method for the production of coated workpieces and plasma treatment chamber

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