JP4741241B2 - 基板表面のプラズマ処理方法 - Google Patents
基板表面のプラズマ処理方法 Download PDFInfo
- Publication number
- JP4741241B2 JP4741241B2 JP2004555942A JP2004555942A JP4741241B2 JP 4741241 B2 JP4741241 B2 JP 4741241B2 JP 2004555942 A JP2004555942 A JP 2004555942A JP 2004555942 A JP2004555942 A JP 2004555942A JP 4741241 B2 JP4741241 B2 JP 4741241B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- distribution
- predetermined
- processing
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 85
- 238000003672 processing method Methods 0.000 title 1
- 238000009826 distribution Methods 0.000 claims abstract description 101
- 238000000034 method Methods 0.000 claims abstract description 71
- 238000004519 manufacturing process Methods 0.000 claims abstract description 11
- 230000008569 process Effects 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 19
- 230000008859 change Effects 0.000 claims description 13
- 230000000737 periodic effect Effects 0.000 claims description 12
- 238000005259 measurement Methods 0.000 claims description 11
- 230000002123 temporal effect Effects 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 5
- 239000007787 solid Substances 0.000 claims description 5
- 239000007790 solid phase Substances 0.000 claims description 5
- 230000009471 action Effects 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- 238000011065 in-situ storage Methods 0.000 claims description 3
- 238000010897 surface acoustic wave method Methods 0.000 claims description 3
- 238000002407 reforming Methods 0.000 claims 1
- 239000012071 phase Substances 0.000 description 13
- 238000004544 sputter deposition Methods 0.000 description 12
- 239000007789 gas Substances 0.000 description 10
- 238000001755 magnetron sputter deposition Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- 238000009489 vacuum treatment Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 210000003734 kidney Anatomy 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000001028 reflection method Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3455—Movable magnets
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical Vapour Deposition (AREA)
Description
本発明の枠組の中で真空処理プロセスおよび対応する基板に及ぼす前記真空処理プロセスの作用のもとに以下のプロセスが理解されている。
a)プラズマ支援により材料が反応性または非反応性のプラズマエッチングの場合のように基板表面から除去されるプロセス、
b)反応性のプラズマ支援による後処理、たとえば基板表面材料の後酸化のような、材料が基板表面で改質されるプロセス、
c)反応性であれ、非反応性であれ、あるいはプラズマ励起CVD法を利用するものであれ、材料が基板表面上に塗布されるプロセス。その際に材料が固相からプロセス雰囲気中に遊離され、直接的またはガスと反応後に基板表面で取り去られる場合、これは、排他的に前記材料の遊離が固体相から材料ソースに生じ、そこでただ1種の物質のみの固相が存在するときに観察されるプロセスである。
−局所的に不均一な密度分布を有するプラズマ放電を発生すること、
−基板が不均一な密度分布のプラズマ放電の作用にさらされること、
−処理結果の分布が、
−不均一な密度分布と基板との所定の相対運動の発生と、
−放電を供給する電気出力の所定の時間的変化および/または必要な場合は基板をバイアスに印加する所定の別の電気信号の発生と、
−前記変化および前記移動の調整と、によって発生すること、にその本質がある。
、すなわち明らかに他の領域よりも増大したプラズマ密度をもつ領域を有する。不均一な密度分布と出力変化の相対運動の調整を限定することによって基板表面で処理結果の平面分布が調整される。
この磁界は、スパッタ面から出て、次にスパッタ面に再び入り込むため、ある区間で本質的にターゲット面と平行に延びる力線によって1つまたは複数のトンネル状の力線パターンを形成する磁界を作ることが知られている。力線がスパッタ面と平行に延びる該力線の領域に集中して周知の効果、アバランシェ効果、増加したプラズマ密度のチューブ状の領域によって発生する。これはスパッタ面が増大して浸食される増加したプラズマ密度の前記領域にあり、マグネトロンスパッタリングとの関係で知られる浸食穴になる。ここで特にターゲット材料をより良く利用するために、とりわけターゲット下方に移動したマグネトロン配列を設けることによって、力線パターンをスパッタコーティング中にスパッタ面に沿って移動することが知られている。
行することができ、あるいは前記測定は、さらに好ましくは、現位置(in situ)で基板処理中に、つまり処理プロセス雰囲気中で行われる。次に、さらに好ましくは、この測定結果が測定された制御量として、所定の相対運動および/または時間的変化を処理結果制御のための調整量として設定する制御回路に供給される。
移動のプラズマの不均一な密度分布ρPLが励起されることが本質的であり、これは図1に従ってプラズマ区間5内の磁界分布の対応する所定の移動によって行われる。
Es:プラズマ放電の電気供給信号(電流および/または電圧)
B(x(t),y(t)):基板に対する分布ρPLのx/y移動、略してBでも表す。
E9:基板バイアス信号
E5、BもしくはE9、Bが周期的信号である場合、対応して7MCD、13Sもしくは5MOD、13Sで調整され、各振幅、時間的信号経過(パルス、台形、三角形、正弦等々)のほかに、それらに信号周期もしくは−周波数も調整される。
示すように調整される。
管が接合され、必要な場合は同じガス供給部を介して、しかし好ましくは概略的に50で示したガス噴射器を利用して、反応性ガスが反応性マグネトロンスパッタコーティングのためにプロセス空間の中に流される。
・処理チャンバ:CLC 200 BB281100 x
・真空ポンプ:Cryo CTI Cryogenics PJ9744445
・マグネトロン磁石システム:MB 300DK ALN02
・DC電源:Pinnacle(アドバンスト・エナジー社)、ad cup 10 kW M/N 3152436−100Aで補完
・層厚記録:スペクトル・エリプソメータWVASE M−2000F、3.333型
・基板:6インチ−シリコーンウェハ
・窒素含有雰囲気中のアルミニウムターゲットAlNからのマグネトロンスパッタコーティング
・放電出力の平均値:
・出力変調周波数:5.95Hz
・出力変調E5による図4記載の磁石配列回動ωの調整可能の位相ロック
・調整可能のE5の変調シフト。
ある。
Claims (16)
- 真空処理プロセスによって処理された表面を備える基板の製造方法において、表面が処理結果の所定の平面分布を有するように処理する基板表面のプラズマ処理方法であって、前記処理は、
単一の材料が固体相から前記基板に向かって、プラズマ放電により支援されて放出される、単一のコーティング材料源によって、前記基板をコーティングする工程、
前記基板の表面から材料をプラズマ支援により除去する工程、および
前記基板の表面において材料をプラズマ支援により改質させる工程のうちのいすれか一つの工程を含み、
他の領域のプラズマ密度と異なるプラズマ密度の顕著な領域を有する局所的に不均一な密度分布を有するプラズマ放電が確立され、
基板が不均一な密度分布のプラズマ放電の作用にさらされ、
処理結果の分布が、
不均一な密度分布と基板との所定の相対的な周期的回転運動の確立と、
放電を供給する電気出力信号の所定の周期的時間的変化および/または基板をバイアス電圧に接続する任意で与えられる別の電気信号の所定の周期的時間的変化の確立とによって確立され、前記電気出力信号または前記別の電気信号がAC信号である場合は、前記信号の前記所定の時間的変化はその変調を示し、さらに前記分布は、
前記変化および前記運動の同期によって確立される、方法。 - 優れた極大密度を有する少なくとも1つの領域を有するプラズマ放電が確立される、請求項1に記載の方法。
- 不均一な密度分布と基板との前記所定の相対的な周期的回転運動が、放電が確立される真空受容体に対する基板の移動を含む、請求項1に記載の方法。
- 所定の相対運動が、放電が作られる真空受容体に対する不均一な密度分布の所定の移動によって実現される、請求項1に記載の方法。
- 不均一な密度分布も磁界を利用して少なくとも一緒に作られる、請求項1に記載の方法。
- 放電が確立される受容体の中で局所的に磁界分布が周期的に移動される、請求項5に記載の方法。
- プラズマ放電および/またはバイアス印加が、直流電源、交流電源、および、直流に交流が重ね合わせられた電源のいずれかを利用して発生される、請求項1に記載の方法。
- 基板が直流電源、交流電源、および、直流に交流が重ね合わせられた電源のいずれかを利用してバイアス電圧に置かれる、請求項1に記載の方法。
- 真空処理プロセスがマグネトロンスパッタプロセスであり、前記所定の相対的な周期的回転運動がターゲットスパッタ面に対するマグネトロントンネル磁界の所定の移動を含む、請求項1に記載の方法。
- 放電を利用して固形物が処理雰囲気中に遊離され、前記処理雰囲気中に反応性ガスが入れられ、表面上の固形物と反応性ガスの成分との間の化合比の分布が処理結果として設定される、請求項1に記載の方法。
- 処理終了前に処理中間結果が測定され、公称処理中間結果と比較され、それによって比較結果の関数として前記所定の相対的な周期的回転運動および/または前記所定の周期的時間的変化が再調整される、請求項1に記載の方法。
- 処理中間結果の測定が真空遮断なしに行われる、請求項11に記載の方法。
- 測定が原位置で基板処理中に行われ、測定結果が測定制御変数として、前記所定の相対的な周期的回転運動および/または前記所定の周期的時間的変化を処理結果調節用の訂正変数として設定する制御回路に供給される、請求項12に記載の方法。
- 基板が処理中および真空受容体に対して固定して保持される、請求項1に記載の方法。
- 担体の所定の表面領域に沿って所定の層厚分布を有するコーティングされたワークピースの製造のための、請求項1に記載の方法の使用。
- 表面弾性波(SAW)または体積弾性波(BAW)に基づいて作動するコンポーネントの製造のための、請求項1に記載の方法の使用。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH20192002 | 2002-11-29 | ||
CH2019/02 | 2002-11-29 | ||
PCT/CH2003/000744 WO2004050943A2 (de) | 2002-11-29 | 2003-11-13 | Verfahren zur plasmabehandlung von oberflächen in vakumm und anlage hierfür |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006508242A JP2006508242A (ja) | 2006-03-09 |
JP2006508242A5 JP2006508242A5 (ja) | 2007-01-25 |
JP4741241B2 true JP4741241B2 (ja) | 2011-08-03 |
Family
ID=32399969
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004555942A Expired - Fee Related JP4741241B2 (ja) | 2002-11-29 | 2003-11-13 | 基板表面のプラズマ処理方法 |
Country Status (10)
Country | Link |
---|---|
US (2) | US7138343B2 (ja) |
EP (1) | EP1565929B1 (ja) |
JP (1) | JP4741241B2 (ja) |
KR (1) | KR101177127B1 (ja) |
CN (1) | CN1745453B (ja) |
AT (1) | ATE375600T1 (ja) |
AU (1) | AU2003277791A1 (ja) |
DE (1) | DE50308371D1 (ja) |
TW (1) | TWI325149B (ja) |
WO (1) | WO2004050943A2 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7264850B1 (en) * | 1992-12-28 | 2007-09-04 | Semiconductor Energy Laboratory Co., Ltd. | Process for treating a substrate with a plasma |
US7138343B2 (en) * | 2002-11-29 | 2006-11-21 | Oc Oerlikon Balzers Ag | Method of producing a substrate with a surface treated by a vacuum treatment process, use of said method for the production of coated workpieces and plasma treatment chamber |
DE102006036403B4 (de) * | 2006-08-02 | 2009-11-19 | Von Ardenne Anlagentechnik Gmbh | Verfahren zur Beschichtung eines Substrats mit einer definierten Schichtdickenverteilung |
US20090078199A1 (en) * | 2007-09-21 | 2009-03-26 | Innovation Vacuum Technology Co., Ltd. | Plasma enhanced chemical vapor deposition apparatus |
US8246794B2 (en) * | 2007-12-07 | 2012-08-21 | Oc Oerlikon Blazers Ag | Method of magnetron sputtering and a method for determining a power modulation compensation function for a power supply applied to a magnetron sputtering source |
CN103094048B (zh) * | 2011-11-01 | 2015-08-19 | 凌嘉科技股份有限公司 | 可位移调整磁控管的装置 |
US20170040140A1 (en) * | 2015-08-06 | 2017-02-09 | Seagate Technology Llc | Magnet array for plasma-enhanced chemical vapor deposition |
DE102018213534A1 (de) * | 2018-08-10 | 2020-02-13 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Vorrichtung und Verfahren zur Herstellung von Schichten mit verbesserter Uniformität bei Beschichtungsanlagen mit horizontal rotierender Substratführung |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0629249A (ja) * | 1991-10-08 | 1994-02-04 | Ulvac Japan Ltd | プラズマエッチング装置 |
JPH0797687A (ja) * | 1993-09-28 | 1995-04-11 | Alps Electric Co Ltd | ダイヤモンド状炭素膜の形成方法、磁気ヘッドの製造方法および磁気ディスクの製造方法 |
JPH09256149A (ja) * | 1996-03-22 | 1997-09-30 | Tokyo Electron Ltd | スパッタリング装置およびスパッタリング方法 |
JPH10158833A (ja) * | 1996-12-02 | 1998-06-16 | Fuji Electric Co Ltd | マグネトロンスパッタ成膜装置および成膜方法 |
JP2001295025A (ja) * | 1999-12-07 | 2001-10-26 | Applied Materials Inc | フィルム特性を改良する2段階AlN−PVD |
US20020162737A1 (en) * | 2001-05-03 | 2002-11-07 | Martin Durs | Magnetron sputter source with multipart target |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59175125A (ja) * | 1983-03-24 | 1984-10-03 | Toshiba Corp | ドライエツチング装置 |
US4668365A (en) * | 1984-10-25 | 1987-05-26 | Applied Materials, Inc. | Apparatus and method for magnetron-enhanced plasma-assisted chemical vapor deposition |
US4858556A (en) * | 1986-09-15 | 1989-08-22 | Siebert Jerome F | Method and apparatus for physical vapor deposition of thin films |
JP3362432B2 (ja) * | 1992-10-31 | 2003-01-07 | ソニー株式会社 | プラズマ処理方法及びプラズマ処理装置 |
US5500077A (en) * | 1993-03-10 | 1996-03-19 | Sumitomo Electric Industries, Ltd. | Method of polishing/flattening diamond |
US5529671A (en) * | 1994-07-27 | 1996-06-25 | Litton Systems, Inc. | Apparatus and method for ion beam polishing and for in-situ ellipsometric deposition of ion beam films |
US5945008A (en) * | 1994-09-29 | 1999-08-31 | Sony Corporation | Method and apparatus for plasma control |
JPH11176815A (ja) * | 1997-12-15 | 1999-07-02 | Ricoh Co Ltd | ドライエッチングの終点判定方法およびドライエッチング装置 |
US6290825B1 (en) * | 1999-02-12 | 2001-09-18 | Applied Materials, Inc. | High-density plasma source for ionized metal deposition |
US6254745B1 (en) * | 1999-02-19 | 2001-07-03 | Tokyo Electron Limited | Ionized physical vapor deposition method and apparatus with magnetic bucket and concentric plasma and material source |
US6767475B2 (en) * | 2000-05-25 | 2004-07-27 | Atomic Telecom | Chemical-organic planarization process for atomically smooth interfaces |
US6413382B1 (en) * | 2000-11-03 | 2002-07-02 | Applied Materials, Inc. | Pulsed sputtering with a small rotating magnetron |
SE525231C2 (sv) | 2001-06-14 | 2005-01-11 | Chemfilt R & D Ab | Förfarande och anordning för att alstra plasma |
US20030164998A1 (en) * | 2002-03-01 | 2003-09-04 | The Regents Of The University Of California | Ion-assisted deposition techniques for the planarization of topological defects |
EP1552544B1 (de) | 2002-10-15 | 2011-12-21 | Oerlikon Trading AG, Trübbach | Verfahren zur Herstellung magnetron-sputterbeschichteter Substrate und Anlage hierfür |
US7138343B2 (en) * | 2002-11-29 | 2006-11-21 | Oc Oerlikon Balzers Ag | Method of producing a substrate with a surface treated by a vacuum treatment process, use of said method for the production of coated workpieces and plasma treatment chamber |
-
2003
- 2003-11-13 US US10/536,204 patent/US7138343B2/en not_active Expired - Lifetime
- 2003-11-13 AU AU2003277791A patent/AU2003277791A1/en not_active Abandoned
- 2003-11-13 AT AT03769144T patent/ATE375600T1/de not_active IP Right Cessation
- 2003-11-13 DE DE50308371T patent/DE50308371D1/de not_active Expired - Lifetime
- 2003-11-13 EP EP03769144A patent/EP1565929B1/de not_active Expired - Lifetime
- 2003-11-13 JP JP2004555942A patent/JP4741241B2/ja not_active Expired - Fee Related
- 2003-11-13 KR KR1020057009745A patent/KR101177127B1/ko active IP Right Grant
- 2003-11-13 CN CN2003801093200A patent/CN1745453B/zh not_active Expired - Fee Related
- 2003-11-13 WO PCT/CH2003/000744 patent/WO2004050943A2/de active IP Right Grant
- 2003-11-27 TW TW092133325A patent/TWI325149B/zh not_active IP Right Cessation
-
2006
- 2006-10-06 US US11/539,218 patent/US7429543B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0629249A (ja) * | 1991-10-08 | 1994-02-04 | Ulvac Japan Ltd | プラズマエッチング装置 |
JPH0797687A (ja) * | 1993-09-28 | 1995-04-11 | Alps Electric Co Ltd | ダイヤモンド状炭素膜の形成方法、磁気ヘッドの製造方法および磁気ディスクの製造方法 |
JPH09256149A (ja) * | 1996-03-22 | 1997-09-30 | Tokyo Electron Ltd | スパッタリング装置およびスパッタリング方法 |
JPH10158833A (ja) * | 1996-12-02 | 1998-06-16 | Fuji Electric Co Ltd | マグネトロンスパッタ成膜装置および成膜方法 |
JP2001295025A (ja) * | 1999-12-07 | 2001-10-26 | Applied Materials Inc | フィルム特性を改良する2段階AlN−PVD |
US20020162737A1 (en) * | 2001-05-03 | 2002-11-07 | Martin Durs | Magnetron sputter source with multipart target |
Also Published As
Publication number | Publication date |
---|---|
JP2006508242A (ja) | 2006-03-09 |
US7429543B2 (en) | 2008-09-30 |
EP1565929A2 (de) | 2005-08-24 |
WO2004050943A2 (de) | 2004-06-17 |
US7138343B2 (en) | 2006-11-21 |
TWI325149B (en) | 2010-05-21 |
TW200415687A (en) | 2004-08-16 |
EP1565929B1 (de) | 2007-10-10 |
US20060054493A1 (en) | 2006-03-16 |
WO2004050943A3 (de) | 2004-08-26 |
AU2003277791A8 (en) | 2004-06-23 |
KR101177127B1 (ko) | 2012-08-24 |
AU2003277791A1 (en) | 2004-06-23 |
CN1745453A (zh) | 2006-03-08 |
CN1745453B (zh) | 2011-08-31 |
ATE375600T1 (de) | 2007-10-15 |
DE50308371D1 (de) | 2007-11-22 |
KR20050085214A (ko) | 2005-08-29 |
US20070084715A1 (en) | 2007-04-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101251209B1 (ko) | 마그네트론 스퍼터링 방법 및 마그네트론 스퍼터링 소스에 인가되는 전력 공급원에 대한 전력 변조 보정 함수 결정 방법 | |
US7429543B2 (en) | Method for the production of a substrate | |
KR101110546B1 (ko) | 마그네트론과 스퍼터 타겟 간의 간격 보상 방법 및 장치 | |
KR960704345A (ko) | 반도체 웨이퍼상에 침착된 막의 특성 제어(Control of the properites of a film deposited on a semiconductor wafer) | |
JP5461426B2 (ja) | マグネトロンスパッタリングターゲットのエロージョン特性の予測及び補正 | |
WO2003018865A1 (en) | Method and apparatus for producing uniform isotropic stresses in a sputtered film | |
CN110904414B (zh) | 磁体组件、包括该磁体组件的装置和方法 | |
TW201009103A (en) | Method for ultra-uniform sputter deposition using simultaneous RF and DC power on target | |
JP6407273B2 (ja) | 圧電性AlN含有層の堆積方法、並びにAlN含有圧電体層 | |
JPH10152772A (ja) | スパッタリング方法及び装置 | |
JP2023156155A (ja) | 真空処理装置及び真空処理方法 | |
Baranov et al. | TiN deposition and morphology control by scalable plasma-assisted surface treatments | |
JP2006508242A5 (ja) | ||
US20100001814A1 (en) | Thin film acoustic reflector stack | |
JPH10121243A (ja) | 真空薄膜成形装置 | |
JP2019099837A (ja) | スパッタ装置およびスパッタ方法 | |
JP2007031815A (ja) | プレーナマグネトロンスパッタ装置およびプレーナマグネトロンスパッタ成膜方法 | |
JPH10265950A (ja) | 薄膜形成装置および薄膜形成の方法 | |
JP2010285647A (ja) | 成膜装置及び成膜方法 | |
TW200528571A (en) | Method and apparatus for producing uniform, isotropic stresses in a sputtered film |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060927 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20061204 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20091104 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20100128 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20100204 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100506 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100914 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20101213 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20101220 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110314 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110412 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110506 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4741241 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140513 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |