Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
  • H01J37/3411—Constructional aspects of the reactor
  • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
  • H01J37/3455—Movable magnets
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/34—Sputtering
  • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/34—Sputtering
  • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/54—Controlling or regulating the coating process
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/54—Controlling or regulating the coating process
  • C23C14/542—Controlling the film thickness or evaporation rate
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/52—Controlling or regulating the coating process

Definitions

• the present invention is based on needs that have arisen in magnetron sputter coating of substrates. However, it has been found that the solution found according to the present invention can generally be used for substrate surfaces treated by vacuum treatment processes.
• each of the release processes and, according to the coating processes, the or with the individual materials is considered as a vacuum treatment process in itself.
• two or more treatment processes are carried out simultaneously.
• a good layer thickness distribution is already achieved with magnetron sputter-coated substrate surfaces, if one considers this distribution in sectional planes perpendicular to the surface of the substrate.
• the layer thickness distributions that result in the above-mentioned cutting planes as good to very good among themselves - i.e. from cutting plane to cutting plane - then, viewed as a layer thickness distribution across the surface in two dimensions, there is an unsatisfactory distribution.
• the layer thickness is recorded along the periphery of the substrate, there is an inadequate distribution for many application purposes.
• the solution found according to the present invention consists in: - create a plasma discharge with a locally inhomogeneous density distribution;
• the aim was to achieve a plasma discharge that was as homogeneously distributed as possible, but rather a plasma discharge that is locally inhomogeneous, i.e. clearly shows areas with increased plasma density compared to other areas.
• the area distribution of the treatment result is set on the substrate surface by targeted adjustment of the relative movement of the inhomogeneous density distribution and the power variation.
• Target parts made of different materials each form a source at which the respective material is released into the process atmosphere.
• the individual solid sources formed by the target parts are operated from a common magnetron arrangement.
• the magnetron field of the magnetron arrangement is moved over the target parts provided, thus also relative to the substrate, and it becomes target part material-specific with the magnetic field movement via the Both sources also changed sputtering performance over time. This makes it possible to take into account the different sputtering characteristics of the two sources in a structurally very simple manner from a magnetron arrangement.
• the magnetron field of the magnetron arrangement is moved over the target parts provided, thus also relative to the substrate, and it becomes target part material-specific with the magnetic field movement via the Both sources also changed sputtering performance over time.
• Plasma discharge created with at least one area with a superior density maximum created with at least one area with a superior density maximum.
• Creation of the predetermined relative movement is realized in a first embodiment by moving the substrate with respect to a vacuum recipient in which the discharge is created.
• the inhomogeneously density-distributed plasma discharge, with its maximum and minimum density points, can be held stationary in the recipient or can also be moved therein.
• the predetermined relative movement is created by a predetermined movement of the inhomogeneous density distribution with respect to the vacuum recipient.
• the inhomogeneous density distribution is at least co-generated by means of a magnetic field.
• Embodiment created a simple way to realize the relative movement of the inhomogeneous plasma density distribution, namely by moving the magnetic field distribution, also inhomogeneous, in the recipient in which the discharge is created.
• the plasma discharge is generated by means of DC, AC, DC and superimposed AC or by means of HF.
• the substrate can be placed on bias by means of DC, AC, DC and superimposed AC or Hf, and then, preferably in addition to the variation of the electrical that operates the plasma discharge
• this bias signal is changed over time. If we speak in the present context of a change in time of an AC signal, then its change in angle or amplitude, that is to say its modulation, is addressed.
• the vacuum treatment process is designed as a magnetron sputtering process, and it becomes the predetermined relative movement at least also realized by a predetermined movement of the magnetron tunnel field with respect to a target sputtering area.
• the relative movement of the locally inhomogeneous density distribution of the plasma with respect to the substrate is realized by the mechanical movement of an arrangement generating a magnetic field outside and / or inside the vacuum recipient.
• Such arrangements are realized: e.g. with electromagnets, coil arrangements, such as Heimholtz coils, deflection coils, with magnetrons with magnet arrangements under the target which rotate or move in given x and y movements, linearly and interdependently.
• the magnetic field can also be moved electrically, by controlled, time-variable control of permanently installed coil arrangements.
• Mechanical movement of magnetic field generators and electrical, time-variable control of coils, which can also be moved mechanically, can be combined.
• the predefined relative movement and the predefined temporal change are each created periodically and their dependency is created by synchronization. It should be noted that it is generally not necessary to design the periodicities created in the same way.
• the periods of the mentioned temporal change and the mentioned relative movement can be quite different, both in such a way that one period is an integer multiple of the other, or in such a way that the periods are in a non-integer relationship to one another.
• a solid is released into the treatment atmosphere with the aid of the discharge. It will a reactive gas was further let into the atmosphere.
• the distribution of the connection ratio between the solid and components of the reactive gas on the surface is set as the treatment result. For example, if a metal is a solid in the
• the treatment result is a coating of the surfaces mentioned.
• the treatment result can also be etching of the treatment surface, both coating or etching, reactive or non-reactive.
• an intermediate treatment result is measured, compared with a target intermediate treatment result, and the predetermined relative movement and / or the change over time is adjusted as a function of the comparison result.
• the measurement mentioned takes place, more preferably, without vacuum interruption.
• the substrate can very well be transported from one vacuum to another, for example from the treatment atmosphere to a measurement atmosphere, or the measurement mentioned, as is further preferred, is carried out in situ during the substrate treatment, that is to say in the
• Treatment process atmosphere made. Then, more preferably, the measurement result is fed as a controlled variable to a control loop which has the predetermined relative movement and / or change over time as a manipulated variable for a treatment result regulation.
• the proposed method is particularly suitable for the production of components working on the basis of surface acoustic waves or of components working on the basis of "bulk acoustic waves”.
• a plasma treatment chamber according to the invention in particular for carrying out the manufacturing method according to the invention, is specified in claim 20, preferred embodiments thereof in claims 21 and 22.
• FIG. 1 schematically, a treatment chamber according to the invention, used for carrying out the manufacturing method according to the invention, also for the basic explanation of the present invention
• FIG. 14 shows a schematic representation of the layer tilting achieved according to the invention.
• a plasma discharge path 5 is provided in a vacuum recipient 1, which, as shown schematically with the selection switch 3a, is electrically connected to ground or possibly to another reference potential ⁇ i, as shown schematically with an electrode 5a and an electrode 5b.
• the plasma discharge path 5 is operated electrically by means of a generator 7, which can be a DC, an AC, a DC + AC or a Kf generator.
• a generator 7 can be a DC, an AC, a DC + AC or a Kf generator.
• the electrodes 5a, 5b as is familiar to the person skilled in the art.
• the generator 7 can be electrically flying depending on the application, connected to ground potential or to another reference potential ⁇ 2 , which of course can also be chosen to be ⁇ i.
• the generator 7 has basically the what the track 5 supplying electric signal E can be modulated in time 5 relative to DC-value and / or phase and / or amplitude and / or time course of a modulation input 7 M oo /.
• the plasma discharge path 5 is designed such that it generates an inhomogeneously distributed plasma.
• a two-dimensional inhomogeneous plasma density distribution is shown in FIG. 1 at p P , for example with a density maximum M.
• the plasma density distribution p ? can be moved with a predetermined movement with respect to a substrate 9.
• FIG. 1 shows the possibility of realizing this by means of a magnetic field.
• a magnetic field H is generated locally in the plasma, for example with a controlled coil arrangement.
• the magnetic field distribution in the discharge path 5 is moved by mechanical movement of the coil arrangement L, as schematized with a motor drive 13 in FIG. 1.
• the substrate carrier or the substrate 9 can be formed using a
• Signal generator 15 are placed on bias, in principle again on DC, AC, AC + DC or Hf. This, as schematized with a further selection switch 3c, with respect to ground potential or with respect to a further reference potential ⁇ 3 .
• the generator 15 preferably also has a modulation input 15 M0 Dr, on which the bias signal is modulated or changed in time, as has already been explained with regard to the signal E 5 for operating the plasma discharge path 5.
• E 5 the electrical feed signal (current and / or voltage) of the plasma discharge
• E 9 the substrate bias signal If E 5 , B or E 9 , 3 are periodic signals, then 7 MCD , 13 s or 5 M Q D / 13 S are set, in addition to the respective amplitudes, the temporal signal curves (pulse, trapezoid, triangle , Sine etc.), the signal period or frequency is also set.
• the relative movement of the inhomogeneous plasma density distribution p ? L with respect to the substrate surface to be treated can be carried out by shifting or moving the plasma density distribution p ? L with respect to recipient 1.
• shifting or moving the plasma density distribution p ? L with respect to recipient 1 it is also possible to move substrate carriers or substrate 9 with respect to recipient 1, if necessary. It is essential that, viewed over the treatment time, and according to a pattern that can be set with the movement mentioned, the substrate surface is sequential with the inhomogeneous one
• Plasma density distribution p ? L is overlaid.
• the discharge voltage or the discharge current and / or, if provided, the bias voltage on the substrate vary over time.
• this movement is two-dimensional (x, y).
• FIG. 2 also shows a highly schematic view of a circular disk-shaped substrate 19 on a substrate carrier 21.
• a process chamber according to FIG. 1 of FIG. 1 is not shown in this illustration.
• a plasma discharge PL is stationary in the vacuum recipient with, as shown in FIG. 2, essentially two-dimensionally inhomogeneous - 1 ⁇ -
• control signal 13 s: ⁇ the x-3 movement of the substrate carrier is controlled, with the control signal 13 sy the y movement.
• the courses of movement B (x, y) and of E5 or E 9 t are, for example, in Fig. 3 over time, the courses of movement B (x, y) and of E5 or E 9 t.
• the mutual phase position is set, such as the phase position ⁇ ⁇ y between movement in the x direction and movement in the y direction, and the phase position between E5 and, for example B x , ⁇ E B-.
• the periods of the two or three signals must be different from one another by integer or non-integer, rational factors. If they are periodic, the phase shift ⁇ xy , ⁇ ⁇ 3 is preferably set and the signals are synchronized in the sense of phase locking. Furthermore, for B x , maximum and
• Minimum value B Ba .:. Bminx or the movement stroke B ⁇ . set likewise, as shown in FIG. 3, for the y-movement component and E 5 or E 9 . It is further preferred to set the time profiles of the respective signals, as shown in FIG. 3 on the profile of B x at (a).
• the area distribution of the processing result is set according to the invention on the plasma-treated substrate surface by appropriate selection, in particular of the sizes mentioned, and their mutual coordination.
• etching profiles on the substrate surface can be set as the processing result, non-reactive or reactive etching methods.
• PECVD plasma-assisted chemical vapor deposition
• the procedure described can be used to set the surface profile of the layers deposited on the substrate surface under consideration. If a constant reactive gas partial pressure is set over the substrate surface in the case of reactive processes, or else in the PEVCD process, the procedure shown enables the resulting areal distribution of the deposited layer to be designed in a targeted manner with regard to layer thickness or stoichiometric ratios.
• Pronounced inhomogeneous plasma density distributions are used in magnetron sputtering by creating areas of high plasma density over the target sputtering areas along the tunel-shaped magnetic field loops.
• magnetron sputtering it is quite common with magnetron sputtering, in particular for reasons of increasing the use of target material, for example by providing magnet arrangements which are moved under the target, to move the tunnel field regions and thus the inhomogeneous plasma density distribution.
• magnetron sputtering is ideal to be used according to the procedure according to the invention.
• the magnetron discharge can be operated with DC, with AC, with superimposed AC + DC or with HF.
• it can be reactive Act magnetron sputtering or non-reactive magnetron sputtering.
• the present invention was also developed to meet the requirements that result from magnetron sputter coating technology and, as was explained with reference to FIGS. 1-3, in principle to adjust the distribution of the effects or results of a plasma treatment along a substrate surface extended.
• FIG. 4 shows a vacuum treatment chamber according to the invention in the form of a magnetron sputter coating, on which the manufacturing method according to the invention is carried out.
• a vacuum chamber 30 can be evacuated via a pump device 32.
• a target 33 made of material to be sputtered is attached to a target back plate 44.
• the magnets 40 of the magnet arrangement can be driven and, as shown in R, can also be displaceable in a radial manner in addition to their rotary movement ⁇ about axis A.
• the magnet arrangement 40 is used to move an extremely inhomogeneous magnetic field with respect to the substrate 45 on the substrate carrier 43.
• the sampling pulses I the Detector unit 37 are time-delay adjustable on a unit 41, ⁇ ; the output-side, time-delayed pulses I ( ⁇ ) trigger or synchronize the sinusoidal signal E 5, for example.
• ⁇ ⁇ ⁇ 3 is specified.
• a gas line for a working gas opens into the treatment chamber 30, as shown at 42, a reactive gas being admitted into the process space for the reactive, if necessary using the same gas feed, but preferably by means of a gas shower schematically shown at 50 Magnetronsputt ⁇ rb ⁇ Anlagenen.
• the distribution of the composition of the layer can be adjusted or adjusted by adjusting the movement of the inhomogeneously density-distributed magnetron plasma and the temporal guidance of the plasma discharge power E 5 along the substrate surface the layer thickness distribution.
• the method according to the invention is being carried out in situ by means of a measuring device 51, for example by means of ellipsometry, electrical resistance measurement, profile measurement of the surface by means of optical reflection methods etc., the distribution of the treatment result on the surface of the substrate using a stationary or possibly moving sensor 54 recorded.
• the measurement result x is compared with a predetermined result distribution W on a difference unit 56.
• the comparison of the result distribution currently determined by measurement with a target distribution is necessary, which is two-dimensionally relevant for the treatment that has already taken place.
• Deviations between the actual (X) and target (W) distribution are fed via a computing unit R as control signals 53 s to a generator unit 58 for the plasma discharge and / or a guide unit 60 for the movement of the inhomogeneous plasma density distribution p PL with respect to the substrate surface.
• a computing unit R it is entirely possible to transfer the substrate from the treatment chamber into a measuring chamber, while maintaining vacuum conditions, after predetermined or predeterminable treatment time periods, where the intermediate result is the previously achieved treatment result or to detect the distribution thereof, to guide the substrate back into the treatment chamber and to continue the process there with correspondingly adapted variables with regard to the movement of the inhomogeneous plasma density distribution and the plasma discharge power E 5 .
• results are presented as they were achieved in the production method carried out according to the present invention with magnetron sputter coating by means of our system, as is shown in principle in FIG. 5.
• FIG. 6 shows, in supervision, the magnet system of the magnetron arrangement which is driven at a constant rotational speed ⁇ .
• FIG. 8 shows the result.
• the layer thickness distribution according to FIG. 9 was also obtained with a modulation stroke of the discharge power E 5 of 5.6% with a locked phase ⁇ £ 3 of 90 °.
• a desired areal effect distribution here distribution of the layer thickness
• a desired azimuthal and radially as homogeneous as possible ie uniform layer thickness distribution.
• 14 is shown schematically from a slightly different point of view than a main application of the present invention.
• one of the distributions of a treatment result achieved according to the invention is the distribution of a layer thickness. 14, one is on the surface T. planar substrate, according to the method according to the invention, deposited a layer with the surface S and the distribution of the thickness d along the surface T.
• the Z axis has the direction of the surface normal N ⁇ at said location.
• the surface normal N s is now spatially tilted with respect to the direction of the surface normal N ⁇ at the same location x 0 / y 0 , corresponding to the coordinate system in the surface S at the location x 0 / y 0 .
• This tilting of the layer surface S plus the essentially flat substrate surface T or, more generally, a non-planar surface T is referred to as a layer tilting.
• An essential application of the present invention is to design the layer tilt spatially according to a predetermined ratio, and possibly locally different along the substrate surface T.
• the layer tilting which is aimed for according to the invention can therefore be zero at least in regions of the surface T, then the direction N s coincides with the direction N ⁇ .

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• Chemical & Material Sciences (AREA)
• Engineering & Computer Science (AREA)
• Chemical Kinetics & Catalysis (AREA)
• Materials Engineering (AREA)
• Mechanical Engineering (AREA)
• Metallurgy (AREA)
• Organic Chemistry (AREA)
• Plasma & Fusion (AREA)
• Physics & Mathematics (AREA)
• General Chemical & Material Sciences (AREA)
• Analytical Chemistry (AREA)
• Physical Vapour Deposition (AREA)
• Treatments Of Macromolecular Shaped Articles (AREA)
• Physical Or Chemical Processes And Apparatus (AREA)
• Plasma Technology (AREA)
• Drying Of Semiconductors (AREA)
• Chemical Vapour Deposition (AREA)

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• 2003
  • 2003-11-13 US US10/536,204 patent/US7138343B2/en not_active Expired - Lifetime
  • 2003-11-13 AU AU2003277791A patent/AU2003277791A1/en not_active Abandoned
  • 2003-11-13 KR KR1020057009745A patent/KR101177127B1/ko not_active Expired - Fee Related
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  • 2003-11-13 AT AT03769144T patent/ATE375600T1/de not_active IP Right Cessation
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• 2006
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