CN1745453B - 用于在真空中对表面进行等离子体处理的方法及装置 - Google Patents

用于在真空中对表面进行等离子体处理的方法及装置 Download PDF

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Publication number
CN1745453B
CN1745453B CN2003801093200A CN200380109320A CN1745453B CN 1745453 B CN1745453 B CN 1745453B CN 2003801093200 A CN2003801093200 A CN 2003801093200A CN 200380109320 A CN200380109320 A CN 200380109320A CN 1745453 B CN1745453 B CN 1745453B
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CN
China
Prior art keywords
plasma
substrate
predetermined
distribution
density distribution
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Expired - Fee Related
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CN2003801093200A
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English (en)
Chinese (zh)
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CN1745453A (zh
Inventor
S·卡德莱克
E·屈格勒
T·哈尔特尔
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Aifa Advanced Technology Co ltd
Evatec AG
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OC Oerlikon Balzers AG
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
CN2003801093200A 2002-11-29 2003-11-13 用于在真空中对表面进行等离子体处理的方法及装置 Expired - Fee Related CN1745453B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CH2019/02 2002-11-29
CH20192002 2002-11-29
PCT/CH2003/000744 WO2004050943A2 (de) 2002-11-29 2003-11-13 Verfahren zur plasmabehandlung von oberflächen in vakumm und anlage hierfür

Publications (2)

Publication Number Publication Date
CN1745453A CN1745453A (zh) 2006-03-08
CN1745453B true CN1745453B (zh) 2011-08-31

Family

ID=32399969

Family Applications (1)

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CN2003801093200A Expired - Fee Related CN1745453B (zh) 2002-11-29 2003-11-13 用于在真空中对表面进行等离子体处理的方法及装置

Country Status (10)

Country Link
US (2) US7138343B2 (https=)
EP (1) EP1565929B1 (https=)
JP (1) JP4741241B2 (https=)
KR (1) KR101177127B1 (https=)
CN (1) CN1745453B (https=)
AT (1) ATE375600T1 (https=)
AU (1) AU2003277791A1 (https=)
DE (1) DE50308371D1 (https=)
TW (1) TWI325149B (https=)
WO (1) WO2004050943A2 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7264850B1 (en) * 1992-12-28 2007-09-04 Semiconductor Energy Laboratory Co., Ltd. Process for treating a substrate with a plasma
US7138343B2 (en) * 2002-11-29 2006-11-21 Oc Oerlikon Balzers Ag Method of producing a substrate with a surface treated by a vacuum treatment process, use of said method for the production of coated workpieces and plasma treatment chamber
DE102006036403B4 (de) * 2006-08-02 2009-11-19 Von Ardenne Anlagentechnik Gmbh Verfahren zur Beschichtung eines Substrats mit einer definierten Schichtdickenverteilung
US20090078199A1 (en) * 2007-09-21 2009-03-26 Innovation Vacuum Technology Co., Ltd. Plasma enhanced chemical vapor deposition apparatus
WO2009072081A1 (en) * 2007-12-07 2009-06-11 Oc Oerlikon Balzers Ag A method of magnetron sputtering and a method for determining a power modulation compensation function for a power supply applied to a magnetron sputtering source
CN103094048B (zh) * 2011-11-01 2015-08-19 凌嘉科技股份有限公司 可位移调整磁控管的装置
US20170040140A1 (en) * 2015-08-06 2017-02-09 Seagate Technology Llc Magnet array for plasma-enhanced chemical vapor deposition
DE102018213534A1 (de) * 2018-08-10 2020-02-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zur Herstellung von Schichten mit verbesserter Uniformität bei Beschichtungsanlagen mit horizontal rotierender Substratführung

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6290825B1 (en) * 1999-02-12 2001-09-18 Applied Materials, Inc. High-density plasma source for ionized metal deposition
CN1341159A (zh) * 1999-02-19 2002-03-20 东京电子有限公司 采用磁桶和同心等离子体源及材料源的等离子体淀积方法及设备
US6413382B1 (en) * 2000-11-03 2002-07-02 Applied Materials, Inc. Pulsed sputtering with a small rotating magnetron

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JPS59175125A (ja) * 1983-03-24 1984-10-03 Toshiba Corp ドライエツチング装置
US4668365A (en) * 1984-10-25 1987-05-26 Applied Materials, Inc. Apparatus and method for magnetron-enhanced plasma-assisted chemical vapor deposition
US4858556A (en) * 1986-09-15 1989-08-22 Siebert Jerome F Method and apparatus for physical vapor deposition of thin films
JPH0629249A (ja) * 1991-10-08 1994-02-04 Ulvac Japan Ltd プラズマエッチング装置
JP3362432B2 (ja) * 1992-10-31 2003-01-07 ソニー株式会社 プラズマ処理方法及びプラズマ処理装置
US5500077A (en) * 1993-03-10 1996-03-19 Sumitomo Electric Industries, Ltd. Method of polishing/flattening diamond
JP3250768B2 (ja) * 1993-09-28 2002-01-28 アルプス電気株式会社 ダイヤモンド状炭素膜の形成方法、磁気ヘッドの製造方法および磁気ディスクの製造方法
US5529671A (en) * 1994-07-27 1996-06-25 Litton Systems, Inc. Apparatus and method for ion beam polishing and for in-situ ellipsometric deposition of ion beam films
US5945008A (en) * 1994-09-29 1999-08-31 Sony Corporation Method and apparatus for plasma control
JPH09256149A (ja) * 1996-03-22 1997-09-30 Tokyo Electron Ltd スパッタリング装置およびスパッタリング方法
JP3744089B2 (ja) * 1996-12-02 2006-02-08 富士電機ホールディングス株式会社 マグネトロンスパッタ成膜装置および成膜方法
JPH11176815A (ja) * 1997-12-15 1999-07-02 Ricoh Co Ltd ドライエッチングの終点判定方法およびドライエッチング装置
US6312568B2 (en) * 1999-12-07 2001-11-06 Applied Materials, Inc. Two-step AIN-PVD for improved film properties
US6767475B2 (en) * 2000-05-25 2004-07-27 Atomic Telecom Chemical-organic planarization process for atomically smooth interfaces
EP1254970A1 (de) * 2001-05-03 2002-11-06 Unaxis Balzers Aktiengesellschaft Magnetronsputterquelle mit mehrteiligem Target
SE525231C2 (sv) * 2001-06-14 2005-01-11 Chemfilt R & D Ab Förfarande och anordning för att alstra plasma
US20030164998A1 (en) * 2002-03-01 2003-09-04 The Regents Of The University Of California Ion-assisted deposition techniques for the planarization of topological defects
US7381661B2 (en) * 2002-10-15 2008-06-03 Oc Oerlikon Balzers Ag Method for the production of a substrate with a magnetron sputter coating and unit for the same
US7138343B2 (en) * 2002-11-29 2006-11-21 Oc Oerlikon Balzers Ag Method of producing a substrate with a surface treated by a vacuum treatment process, use of said method for the production of coated workpieces and plasma treatment chamber

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6290825B1 (en) * 1999-02-12 2001-09-18 Applied Materials, Inc. High-density plasma source for ionized metal deposition
CN1341159A (zh) * 1999-02-19 2002-03-20 东京电子有限公司 采用磁桶和同心等离子体源及材料源的等离子体淀积方法及设备
US6413382B1 (en) * 2000-11-03 2002-07-02 Applied Materials, Inc. Pulsed sputtering with a small rotating magnetron

Also Published As

Publication number Publication date
AU2003277791A8 (en) 2004-06-23
ATE375600T1 (de) 2007-10-15
JP2006508242A (ja) 2006-03-09
US7138343B2 (en) 2006-11-21
JP4741241B2 (ja) 2011-08-03
WO2004050943A2 (de) 2004-06-17
EP1565929A2 (de) 2005-08-24
TWI325149B (en) 2010-05-21
WO2004050943A3 (de) 2004-08-26
KR20050085214A (ko) 2005-08-29
US7429543B2 (en) 2008-09-30
TW200415687A (en) 2004-08-16
EP1565929B1 (de) 2007-10-10
US20060054493A1 (en) 2006-03-16
US20070084715A1 (en) 2007-04-19
KR101177127B1 (ko) 2012-08-24
DE50308371D1 (de) 2007-11-22
CN1745453A (zh) 2006-03-08
AU2003277791A1 (en) 2004-06-23

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