JP2006505139A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2006505139A5 JP2006505139A5 JP2004550192A JP2004550192A JP2006505139A5 JP 2006505139 A5 JP2006505139 A5 JP 2006505139A5 JP 2004550192 A JP2004550192 A JP 2004550192A JP 2004550192 A JP2004550192 A JP 2004550192A JP 2006505139 A5 JP2006505139 A5 JP 2006505139A5
- Authority
- JP
- Japan
- Prior art keywords
- composition
- cleaning composition
- cleaning
- concentration
- alcohol
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004140 cleaning Methods 0.000 claims 19
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims 18
- 238000000034 method Methods 0.000 claims 16
- 239000000356 contaminant Substances 0.000 claims 14
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 9
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 9
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims 9
- 239000004327 boric acid Substances 0.000 claims 9
- 229910052731 fluorine Inorganic materials 0.000 claims 9
- 239000011737 fluorine Substances 0.000 claims 9
- 239000000654 additive Substances 0.000 claims 8
- HFHFGHLXUCOHLN-UHFFFAOYSA-N 2-fluorophenol Chemical compound OC1=CC=CC=C1F HFHFGHLXUCOHLN-UHFFFAOYSA-N 0.000 claims 6
- 208000036822 Small cell carcinoma of the ovary Diseases 0.000 claims 6
- 230000000996 additive effect Effects 0.000 claims 6
- 229910052739 hydrogen Inorganic materials 0.000 claims 6
- 239000001257 hydrogen Substances 0.000 claims 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims 6
- 201000005292 ovarian small cell carcinoma Diseases 0.000 claims 6
- 239000000126 substance Substances 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 5
- ALKYHXVLJMQRLQ-UHFFFAOYSA-N 3-Hydroxy-2-naphthoate Chemical compound C1=CC=C2C=C(O)C(C(=O)O)=CC2=C1 ALKYHXVLJMQRLQ-UHFFFAOYSA-N 0.000 claims 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 4
- 125000000217 alkyl group Chemical group 0.000 claims 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 4
- 230000003068 static effect Effects 0.000 claims 3
- 239000004094 surface-active agent Substances 0.000 claims 3
- 229910017855 NH 4 F Inorganic materials 0.000 claims 2
- -1 amine hydrogen trifluoride compound Chemical class 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims 2
- GRJJQCWNZGRKAU-UHFFFAOYSA-N pyridin-1-ium;fluoride Chemical compound F.C1=CC=NC=C1 GRJJQCWNZGRKAU-UHFFFAOYSA-N 0.000 claims 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims 1
- 238000001556 precipitation Methods 0.000 claims 1
- 238000005406 washing Methods 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/284,861 US6943139B2 (en) | 2002-10-31 | 2002-10-31 | Removal of particle contamination on patterned silicon/silicon dioxide using supercritical carbon dioxide/chemical formulations |
| PCT/US2003/034332 WO2004042794A2 (en) | 2002-10-31 | 2003-10-29 | Removal of particle contamination on patterned slilicon/silicon dioxide using supercritical carbon dioxide/chemical formulations |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006505139A JP2006505139A (ja) | 2006-02-09 |
| JP2006505139A5 true JP2006505139A5 (https=) | 2006-12-28 |
Family
ID=32174999
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004550192A Pending JP2006505139A (ja) | 2002-10-31 | 2003-10-29 | 超臨界二酸化炭素／化学調合物を用いたパターン化されたシリコン／二酸化ケイ素上における粒子状汚染物質の除去 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6943139B2 (https=) |
| EP (1) | EP1559132A4 (https=) |
| JP (1) | JP2006505139A (https=) |
| KR (1) | KR20050075758A (https=) |
| CN (2) | CN100346887C (https=) |
| AU (1) | AU2003288966A1 (https=) |
| TW (1) | TW200408699A (https=) |
| WO (1) | WO2004042794A2 (https=) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3978023B2 (ja) * | 2001-12-03 | 2007-09-19 | 株式会社神戸製鋼所 | 高圧処理方法 |
| US20060019850A1 (en) * | 2002-10-31 | 2006-01-26 | Korzenski Michael B | Removal of particle contamination on a patterned silicon/silicon dioxide using dense fluid/chemical formulations |
| CA2589168A1 (en) * | 2003-12-01 | 2005-06-16 | Advanced Technology Materials, Inc. | Removal of mems sacrificial layers using supercritical fluid/chemical formulations |
| US7553803B2 (en) * | 2004-03-01 | 2009-06-30 | Advanced Technology Materials, Inc. | Enhancement of silicon-containing particulate material removal using supercritical fluid-based compositions |
| US7195676B2 (en) * | 2004-07-13 | 2007-03-27 | Air Products And Chemicals, Inc. | Method for removal of flux and other residue in dense fluid systems |
| US20060081273A1 (en) * | 2004-10-20 | 2006-04-20 | Mcdermott Wayne T | Dense fluid compositions and processes using same for article treatment and residue removal |
| JP2008537343A (ja) * | 2005-04-15 | 2008-09-11 | アドバンスド テクノロジー マテリアルズ，インコーポレイテッド | マイクロエレクトロニクスデバイスからイオン注入フォトレジスト層をクリーニングするための配合物 |
| WO2007120259A2 (en) * | 2005-11-08 | 2007-10-25 | Advanced Technology Materials, Inc. | Formulations for removing copper-containing post-etch residue from microelectronic devices |
| US8084367B2 (en) * | 2006-05-24 | 2011-12-27 | Samsung Electronics Co., Ltd | Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methods |
| US20080125342A1 (en) * | 2006-11-07 | 2008-05-29 | Advanced Technology Materials, Inc. | Formulations for cleaning memory device structures |
| US8568018B2 (en) | 2007-12-20 | 2013-10-29 | Rave N.P., Inc. | Fluid injection assembly for nozzles |
| CN101740341B (zh) * | 2008-11-26 | 2011-12-07 | 中国科学院微电子研究所 | 二氧化碳低温气溶胶半导体清洗设备 |
| KR101891363B1 (ko) | 2010-10-13 | 2018-08-24 | 엔테그리스, 아이엔씨. | 티타늄 니트라이드 부식을 억제하기 위한 조성물 및 방법 |
| US8883565B2 (en) * | 2011-10-04 | 2014-11-11 | Infineon Technologies Ag | Separation of semiconductor devices from a wafer carrier |
| US9387511B1 (en) * | 2012-04-15 | 2016-07-12 | Cleanlogix Llc | Particle-plasma ablation process for polymeric ophthalmic substrate surface |
| KR102118964B1 (ko) | 2012-12-05 | 2020-06-08 | 엔테그리스, 아이엔씨. | Iii-v 반도체 물질을 세척하기 위한 조성물 및 이를 사용하는 방법 |
| US10472567B2 (en) | 2013-03-04 | 2019-11-12 | Entegris, Inc. | Compositions and methods for selectively etching titanium nitride |
| KR102338550B1 (ko) | 2013-06-06 | 2021-12-14 | 엔테그리스, 아이엔씨. | 질화 티타늄의 선택적인 에칭을 위한 조성물 및 방법 |
| US10138117B2 (en) | 2013-07-31 | 2018-11-27 | Entegris, Inc. | Aqueous formulations for removing metal hard mask and post-etch residue with Cu/W compatibility |
| SG11201601158VA (en) | 2013-08-30 | 2016-03-30 | Advanced Tech Materials | Compositions and methods for selectively etching titanium nitride |
| WO2015095175A1 (en) | 2013-12-16 | 2015-06-25 | Advanced Technology Materials, Inc. | Ni:nige:ge selective etch formulations and method of using same |
| TWI662379B (zh) | 2013-12-20 | 2019-06-11 | Entegris, Inc. | 移除離子植入抗蝕劑之非氧化強酸類之用途 |
| WO2015103146A1 (en) | 2013-12-31 | 2015-07-09 | Advanced Technology Materials, Inc. | Formulations to selectively etch silicon and germanium |
| TWI659098B (zh) | 2014-01-29 | 2019-05-11 | Entegris, Inc. | 化學機械研磨後配方及其使用方法 |
| US11127587B2 (en) | 2014-02-05 | 2021-09-21 | Entegris, Inc. | Non-amine post-CMP compositions and method of use |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5306350A (en) * | 1990-12-21 | 1994-04-26 | Union Carbide Chemicals & Plastics Technology Corporation | Methods for cleaning apparatus using compressed fluids |
| KR0137841B1 (ko) * | 1994-06-07 | 1998-04-27 | 문정환 | 식각잔류물 제거방법 |
| US5783082A (en) * | 1995-11-03 | 1998-07-21 | University Of North Carolina | Cleaning process using carbon dioxide as a solvent and employing molecularly engineered surfactants |
| US5868862A (en) * | 1996-08-01 | 1999-02-09 | Texas Instruments Incorporated | Method of removing inorganic contamination by chemical alteration and extraction in a supercritical fluid media |
| US5908510A (en) * | 1996-10-16 | 1999-06-01 | International Business Machines Corporation | Residue removal by supercritical fluids |
| US6149828A (en) * | 1997-05-05 | 2000-11-21 | Micron Technology, Inc. | Supercritical etching compositions and method of using same |
| US6500605B1 (en) * | 1997-05-27 | 2002-12-31 | Tokyo Electron Limited | Removal of photoresist and residue from substrate using supercritical carbon dioxide process |
| US6306564B1 (en) * | 1997-05-27 | 2001-10-23 | Tokyo Electron Limited | Removal of resist or residue from semiconductors using supercritical carbon dioxide |
| US6277753B1 (en) * | 1998-09-28 | 2001-08-21 | Supercritical Systems Inc. | Removal of CMP residue from semiconductors using supercritical carbon dioxide process |
| US6148645A (en) * | 1999-05-14 | 2000-11-21 | Micell Technologies, Inc. | Detergent injection systems for carbon dioxide cleaning apparatus |
| TW544797B (en) * | 2001-04-17 | 2003-08-01 | Kobe Steel Ltd | High-pressure processing apparatus |
| US6764552B1 (en) * | 2002-04-18 | 2004-07-20 | Novellus Systems, Inc. | Supercritical solutions for cleaning photoresist and post-etch residue from low-k materials |
| US6669785B2 (en) * | 2002-05-15 | 2003-12-30 | Micell Technologies, Inc. | Methods and compositions for etch cleaning microelectronic substrates in carbon dioxide |
-
2002
- 2002-10-31 US US10/284,861 patent/US6943139B2/en not_active Expired - Fee Related
-
2003
- 2003-10-13 TW TW092128267A patent/TW200408699A/zh unknown
- 2003-10-29 JP JP2004550192A patent/JP2006505139A/ja active Pending
- 2003-10-29 EP EP03781458A patent/EP1559132A4/en not_active Withdrawn
- 2003-10-29 WO PCT/US2003/034332 patent/WO2004042794A2/en not_active Ceased
- 2003-10-29 CN CNB2003801021202A patent/CN100346887C/zh not_active Expired - Fee Related
- 2003-10-29 KR KR1020057007090A patent/KR20050075758A/ko not_active Ceased
- 2003-10-29 AU AU2003288966A patent/AU2003288966A1/en not_active Abandoned
- 2003-10-29 CN CNA2007101547063A patent/CN101215493A/zh active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2006505139A5 (https=) | ||
| JP2006504847A5 (https=) | ||
| JP2007526653A5 (https=) | ||
| KR100746056B1 (ko) | 기판표면 세정액 및 세정방법 | |
| US6943139B2 (en) | Removal of particle contamination on patterned silicon/silicon dioxide using supercritical carbon dioxide/chemical formulations | |
| JP4350364B2 (ja) | 洗浄剤組成物、半導体ウェーハの洗浄方法および製造方法 | |
| US7223352B2 (en) | Supercritical carbon dioxide/chemical formulation for ashed and unashed aluminum post-etch residue removal | |
| CN1871333A (zh) | 用于高效清洁/抛光半导体晶片的组合物和方法 | |
| JP2004047980A5 (ja) | 微細構造体の洗浄方法 | |
| KR20040045876A (ko) | 구리-특이적 부식 저해제를 함유하는 반도체 기판 상의무기 잔류물 세정용 수성 세정 조성물 | |
| CN1483093A (zh) | 含有1,3-二羰基化合物的半导体去膜组合物 | |
| RU2008117408A (ru) | Гель, удаляемый вакуумом, для очистки поверхностей, его применение и способ дезактивации поверхности | |
| JP2006503972A (ja) | 半導体デバイスを洗浄するための水性リン酸組成物 | |
| JP2006515933A5 (https=) | ||
| KR102175737B1 (ko) | 알루미늄 챔버 부분들을 습식 세정하는 방법 | |
| WO2004042472A2 (en) | Supercritical carbon dioxide/chemical formulation for removal of photoresists | |
| JP2006505010A5 (https=) | ||
| WO2009058275A1 (en) | Methods of post chemical mechanical polishing and wafer cleaning using amidoxime compositions | |
| KR20080025697A (ko) | 구리를 부동태화하는 ｃｍｐ후 세정 조성물 및 이용 방법 | |
| JPWO2009072529A1 (ja) | 半導体デバイス用基板の洗浄方法及び洗浄液 | |
| CN1122846A (zh) | 包合复合组分的洗洁剂和利用这种洗洁剂的清洁方法 | |
| JP3624809B2 (ja) | 洗浄剤組成物、洗浄方法及びその用途 | |
| CN101204701A (zh) | 一种阳极氧化零件表面的清洗方法 | |
| CN116274113A (zh) | 一种硅片承载用花篮的清洗工艺 | |
| KR101101378B1 (ko) | Ｔｆｔ-ｌｃｄ용 세정액 조성물 |