CN100346887C - 图案化硅/二氧化硅部件上污染物去除用的、采用超临界二氧化碳/化学制剂的清洗溶液以及其使用方法 - Google Patents

图案化硅/二氧化硅部件上污染物去除用的、采用超临界二氧化碳/化学制剂的清洗溶液以及其使用方法 Download PDF

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Publication number
CN100346887C
CN100346887C CNB2003801021202A CN200380102120A CN100346887C CN 100346887 C CN100346887 C CN 100346887C CN B2003801021202 A CNB2003801021202 A CN B2003801021202A CN 200380102120 A CN200380102120 A CN 200380102120A CN 100346887 C CN100346887 C CN 100346887C
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composition
cleaning combination
cleaning
hydroxyl
particle contamination
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Chinese (zh)
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CN1708364A (zh
Inventor
迈克尔·B·克赞斯基
埃利奥多·G·根丘
许从应
托马斯·H·包姆
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Advanced Technology Materials Inc
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Advanced Technology Materials Inc
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0021—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3281—Heterocyclic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5022—Organic solvents containing oxygen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

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  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
CNB2003801021202A 2002-10-31 2003-10-29 图案化硅/二氧化硅部件上污染物去除用的、采用超临界二氧化碳/化学制剂的清洗溶液以及其使用方法 Expired - Fee Related CN100346887C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/284,861 US6943139B2 (en) 2002-10-31 2002-10-31 Removal of particle contamination on patterned silicon/silicon dioxide using supercritical carbon dioxide/chemical formulations
US10/284,861 2002-10-31

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CNA2007101547063A Division CN101215493A (zh) 2002-10-31 2003-10-29 采用超临界二氧化碳/化学制剂去除图案化硅/二氧化硅上的粒子污染物

Publications (2)

Publication Number Publication Date
CN1708364A CN1708364A (zh) 2005-12-14
CN100346887C true CN100346887C (zh) 2007-11-07

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
CNB2003801021202A Expired - Fee Related CN100346887C (zh) 2002-10-31 2003-10-29 图案化硅/二氧化硅部件上污染物去除用的、采用超临界二氧化碳/化学制剂的清洗溶液以及其使用方法
CNA2007101547063A Pending CN101215493A (zh) 2002-10-31 2003-10-29 采用超临界二氧化碳/化学制剂去除图案化硅/二氧化硅上的粒子污染物

Family Applications After (1)

Application Number Title Priority Date Filing Date
CNA2007101547063A Pending CN101215493A (zh) 2002-10-31 2003-10-29 采用超临界二氧化碳/化学制剂去除图案化硅/二氧化硅上的粒子污染物

Country Status (8)

Country Link
US (1) US6943139B2 (https=)
EP (1) EP1559132A4 (https=)
JP (1) JP2006505139A (https=)
KR (1) KR20050075758A (https=)
CN (2) CN100346887C (https=)
AU (1) AU2003288966A1 (https=)
TW (1) TW200408699A (https=)
WO (1) WO2004042794A2 (https=)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3978023B2 (ja) * 2001-12-03 2007-09-19 株式会社神戸製鋼所 高圧処理方法
US20060019850A1 (en) * 2002-10-31 2006-01-26 Korzenski Michael B Removal of particle contamination on a patterned silicon/silicon dioxide using dense fluid/chemical formulations
CA2589168A1 (en) * 2003-12-01 2005-06-16 Advanced Technology Materials, Inc. Removal of mems sacrificial layers using supercritical fluid/chemical formulations
US7553803B2 (en) * 2004-03-01 2009-06-30 Advanced Technology Materials, Inc. Enhancement of silicon-containing particulate material removal using supercritical fluid-based compositions
US7195676B2 (en) * 2004-07-13 2007-03-27 Air Products And Chemicals, Inc. Method for removal of flux and other residue in dense fluid systems
US20060081273A1 (en) * 2004-10-20 2006-04-20 Mcdermott Wayne T Dense fluid compositions and processes using same for article treatment and residue removal
EP1879704A2 (en) * 2005-04-15 2008-01-23 Advanced Technology Materials, Inc. Formulations for cleaning ion-implanted photoresist layers from microelectronic devices
WO2007120259A2 (en) * 2005-11-08 2007-10-25 Advanced Technology Materials, Inc. Formulations for removing copper-containing post-etch residue from microelectronic devices
US8084367B2 (en) * 2006-05-24 2011-12-27 Samsung Electronics Co., Ltd Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methods
US20080125342A1 (en) * 2006-11-07 2008-05-29 Advanced Technology Materials, Inc. Formulations for cleaning memory device structures
KR101506654B1 (ko) 2007-12-20 2015-03-27 레이브 엔.피., 인크. 노즐용 유체 분사 조립체
CN101740341B (zh) * 2008-11-26 2011-12-07 中国科学院微电子研究所 二氧化碳低温气溶胶半导体清洗设备
KR101891363B1 (ko) 2010-10-13 2018-08-24 엔테그리스, 아이엔씨. 티타늄 니트라이드 부식을 억제하기 위한 조성물 및 방법
US8883565B2 (en) * 2011-10-04 2014-11-11 Infineon Technologies Ag Separation of semiconductor devices from a wafer carrier
US9352355B1 (en) * 2012-04-15 2016-05-31 David P. Jackson Particle-plasma ablation process
KR102118964B1 (ko) 2012-12-05 2020-06-08 엔테그리스, 아이엔씨. Iii-v 반도체 물질을 세척하기 위한 조성물 및 이를 사용하는 방법
JP6363116B2 (ja) 2013-03-04 2018-07-25 インテグリス・インコーポレーテッド 窒化チタンを選択的にエッチングするための組成物および方法
KR102338550B1 (ko) 2013-06-06 2021-12-14 엔테그리스, 아이엔씨. 질화 티타늄의 선택적인 에칭을 위한 조성물 및 방법
KR102338526B1 (ko) 2013-07-31 2021-12-14 엔테그리스, 아이엔씨. Cu/W 호환성을 갖는, 금속 하드 마스크 및 에칭-후 잔여물을 제거하기 위한 수성 제형
KR102340516B1 (ko) 2013-08-30 2021-12-21 엔테그리스, 아이엔씨. 티타늄 니트라이드를 선택적으로 에칭하기 위한 조성물 및 방법
TWI654340B (zh) 2013-12-16 2019-03-21 美商恩特葛瑞斯股份有限公司 Ｎｉ：ＮｉＧｅ：Ｇｅ選擇性蝕刻配方及其使用方法
KR102352475B1 (ko) 2013-12-20 2022-01-18 엔테그리스, 아이엔씨. 이온-주입된 레지스트의 제거를 위한 비-산화성 강산의 용도
US10475658B2 (en) 2013-12-31 2019-11-12 Entegris, Inc. Formulations to selectively etch silicon and germanium
TWI659098B (zh) 2014-01-29 2019-05-11 Entegris, Inc. 化學機械研磨後配方及其使用方法
US11127587B2 (en) 2014-02-05 2021-09-21 Entegris, Inc. Non-amine post-CMP compositions and method of use

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5306350A (en) * 1990-12-21 1994-04-26 Union Carbide Chemicals & Plastics Technology Corporation Methods for cleaning apparatus using compressed fluids
US5868862A (en) * 1996-08-01 1999-02-09 Texas Instruments Incorporated Method of removing inorganic contamination by chemical alteration and extraction in a supercritical fluid media
US5873948A (en) * 1994-06-07 1999-02-23 Lg Semicon Co., Ltd. Method for removing etch residue material
WO2001033613A2 (en) * 1999-11-02 2001-05-10 Tokyo Electron Limited Removal of photoresist and residue from substrate using supercritical carbon dioxide process

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5783082A (en) * 1995-11-03 1998-07-21 University Of North Carolina Cleaning process using carbon dioxide as a solvent and employing molecularly engineered surfactants
US5908510A (en) * 1996-10-16 1999-06-01 International Business Machines Corporation Residue removal by supercritical fluids
US6149828A (en) 1997-05-05 2000-11-21 Micron Technology, Inc. Supercritical etching compositions and method of using same
US6306564B1 (en) * 1997-05-27 2001-10-23 Tokyo Electron Limited Removal of resist or residue from semiconductors using supercritical carbon dioxide
US6277753B1 (en) * 1998-09-28 2001-08-21 Supercritical Systems Inc. Removal of CMP residue from semiconductors using supercritical carbon dioxide process
US6148645A (en) * 1999-05-14 2000-11-21 Micell Technologies, Inc. Detergent injection systems for carbon dioxide cleaning apparatus
TW544797B (en) * 2001-04-17 2003-08-01 Kobe Steel Ltd High-pressure processing apparatus
US6764552B1 (en) * 2002-04-18 2004-07-20 Novellus Systems, Inc. Supercritical solutions for cleaning photoresist and post-etch residue from low-k materials
US6669785B2 (en) * 2002-05-15 2003-12-30 Micell Technologies, Inc. Methods and compositions for etch cleaning microelectronic substrates in carbon dioxide

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5306350A (en) * 1990-12-21 1994-04-26 Union Carbide Chemicals & Plastics Technology Corporation Methods for cleaning apparatus using compressed fluids
US5873948A (en) * 1994-06-07 1999-02-23 Lg Semicon Co., Ltd. Method for removing etch residue material
US5868862A (en) * 1996-08-01 1999-02-09 Texas Instruments Incorporated Method of removing inorganic contamination by chemical alteration and extraction in a supercritical fluid media
WO2001033613A2 (en) * 1999-11-02 2001-05-10 Tokyo Electron Limited Removal of photoresist and residue from substrate using supercritical carbon dioxide process

Also Published As

Publication number Publication date
JP2006505139A (ja) 2006-02-09
CN1708364A (zh) 2005-12-14
TW200408699A (en) 2004-06-01
AU2003288966A1 (en) 2004-06-07
EP1559132A2 (en) 2005-08-03
WO2004042794A2 (en) 2004-05-21
US20040087456A1 (en) 2004-05-06
AU2003288966A8 (en) 2004-06-07
WO2004042794B1 (en) 2004-09-23
WO2004042794A3 (en) 2004-07-15
CN101215493A (zh) 2008-07-09
KR20050075758A (ko) 2005-07-21
US6943139B2 (en) 2005-09-13
EP1559132A4 (en) 2007-04-11

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