JP2006504262A - 多結晶化方法、多結晶シリコン薄膜トランジスタの製造方法、及びそのためのレーザー照射装置 - Google Patents
多結晶化方法、多結晶シリコン薄膜トランジスタの製造方法、及びそのためのレーザー照射装置 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 64
- 238000000034 method Methods 0.000 title claims description 39
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims description 32
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 239000006096 absorbing agent Substances 0.000 claims abstract description 7
- 239000010408 film Substances 0.000 claims description 27
- 239000004065 semiconductor Substances 0.000 claims description 16
- 238000007711 solidification Methods 0.000 claims description 15
- 230000008023 solidification Effects 0.000 claims description 15
- 230000001678 irradiating effect Effects 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 8
- 238000010030 laminating Methods 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 3
- 238000002310 reflectometry Methods 0.000 claims description 3
- 230000010355 oscillation Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 29
- 239000004973 liquid crystal related substance Substances 0.000 description 11
- 230000005540 biological transmission Effects 0.000 description 10
- 239000013078 crystal Substances 0.000 description 10
- 239000007788 liquid Substances 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 238000002425 crystallisation Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 206010047571 Visual impairment Diseases 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
Description
このような非晶質シリコン薄膜トランジスタはほぼ0.5〜1cm2/Vsec程度の移動度(mobility)を有しており、液晶表示装置のスイッチング素子としては使用可能であるが、移動度が小さいため、液晶パネルの上部に直接駆動回路を形成するには不適合である短所がある。
しかしながら、透過レンズの温度が変わるとレーザービームの焦点が変わる問題点が発生し、これにより、薄膜トランジスタの多結晶シリコン半導体層の結晶化が不均一となる。このような問題点を解決するためには、透過レンズの温度を一定に維持した状態でレーザービームを照射する技術を確保するのが最も重要な課題である。
前記ドレーン電極に連結される画素電極を形成する段階をさらに含むことができ、この時、前記画素電極は透明な導電物質又は反射率を有する導電物質で形成する。
図1Aは、レーザーを照射して非晶質シリコンを多結晶シリコンに結晶化する順次的側面固化工程を概略的に示した概略図であり、図1Bは、順次的側面固化工程によって非晶質シリコンが多結晶シリコンに結晶化される過程での多結晶シリコンの微細構造を示した図であり、図1Cは、非晶質シリコンを多結晶シリコンに結晶化する順次的側面固化工程での単位スキャニング段階を概略的に示した図である。
図2A及び図2Bは、本発明の一つの実施例による多結晶化用レーザー照射装置を概略的に示したものである。
図3は、本発明の一つの実施例による多結晶シリコン薄膜トランジスタの断面図であり、図4A乃至図4Eは、図3に示した多結晶シリコン薄膜トランジスタを、本発明の一つの実施例によって製造する方法の中間段階での断面図である。ここで、薄膜トランジスタは、画素電極を共に有する構造を例に挙げたが、本発明の薄膜トランジスタの製造方法は、基板上に駆動回路のための薄膜トランジスタを有する場合にも適用する。
次に、図4Cのように、酸化ケイ素(SiN2)や窒化ケイ素を蒸着してゲート絶縁膜30を形成する。続いて、ゲート配線用導電性物質を蒸着した後、パターニングして、ゲート電極40を形成する。その後、図4Cのように、ゲート電極40をマスクとして半導体層20にn型又はp型の不純物をイオン注入し、活性化して、ソース及びドレーン領域22、23を形成する。この時、ソース及びドレーン領域22、23の間はチャンネル領域21と定義される。
20 半導体層
21 チャンネル領域
22、23 ソース及びドレーン領域
25 非晶質(多結晶)薄膜
30 ゲート絶縁層
40 ゲート電極
50 層間絶縁膜
52、53 接触孔
62、63 ソース及びドレーン電極
70 保護膜
73 接触孔
80 画素電極
200 非晶質シリコン薄膜
210 液状領域
220 固状領域
300 マスク
301、302、310 透過領域
400 ステージ
500 レーザー発振器
600 光学部
700 投射レンズ
810 制御部
820 反射板
830 吸収体
Claims (7)
- 基板上に形成された非晶質シリコンの薄膜にレーザービームを照射するレーザー照射装置であって、
前記基板を搭載するステージ、
レーザービームを生成するレーザー発振部、
レーザービームを前記薄膜に集積して誘導する投射レンズ、
前記薄膜へ誘導されたレーザービームを反射する反射板、
前記反射板の位置を制御する反射板制御部、及び
前記反射板で反射されたレーザービームを吸収する吸収体
を含むレーザー照射装置。 - 投射レンズを備えたレーザー照射装置を利用して薄膜トランジスタを製造する方法において、
基板の上部に非晶質シリコン薄膜を積層する段階、
前記レーザー照射装置の投射レンズを予熱した後、前記レーザー照射装置からのレーザービームを、スリットパターンを有する露光マスクを通して前記非晶質シリコン薄膜に照射して、多結晶シリコン層に結晶化する段階、
前記多結晶シリコン層をパターニングして半導体層を形成する段階、
前記半導体層上に第1絶縁膜を形成する段階、
前記第1絶縁膜の上部にゲート電極を形成する段階、
前記半導体層に不純物を注入して、ソース及びドレーン領域を形成する段階、
前記ゲート電極上に第2絶縁膜を形成する段階、
前記第1絶縁膜又は前記第2絶縁膜に前記ソース及びドレーン領域を露出する接触孔を形成する段階、及び
前記接触孔を介して前記ソース及びドレーン領域に各々連結されるソース及びドレーン電極を各々形成する段階
を含む薄膜トランジスタの製造方法。 - 前記多結晶シリコン層は順次的固状結晶化工程(lateral sequential solidification)で形成する、請求項2に記載の薄膜トランジスタの製造方法。
- 前記ドレーン電極に連結される画素電極を形成する段階をさらに含む、請求項2に記載の薄膜トランジスタの製造方法。
- 前記画素電極は、透明な導電物質又は反射率を有する導電物質で形成する、請求項4に記載の薄膜トランジスタの製造方法。
- 投射レンズを備えたレーザー照射装置を利用して非晶質シリコン薄膜を多結晶化する方法において、
基板の上部に非晶質シリコン薄膜を積層する段階、
前記レーザー照射装置からのレーザービームが前記薄膜に照射されないようにしながら、前記レーザー照射装置の投射レンズを予熱する段階、及び
前記予熱段階の後、前記レーザー照射装置からのレーザービームを前記非晶質シリコン薄膜に照射して多結晶化する段階
を含む多結晶化方法。 - 前記予熱段階において、前記レーザー照射装置からのレーザービームは反射されて前記薄膜から遠くなる、請求項6に記載の多結晶化方法。
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KR1020020064511A KR100916656B1 (ko) | 2002-10-22 | 2002-10-22 | 레이저 조사 장치 및 이를 이용한 다결정 규소 박막트랜지스터의 제조 방법 |
PCT/KR2003/002212 WO2004038775A1 (en) | 2002-10-22 | 2003-10-21 | Method of polycyrstallization, method of manufacturing polysilicon thin film transistor, and laser irradiation device therefor |
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KR (1) | KR100916656B1 (ja) |
CN (2) | CN100364053C (ja) |
AU (1) | AU2003272110A1 (ja) |
TW (1) | TWI311800B (ja) |
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JP2010192469A (ja) * | 2009-02-13 | 2010-09-02 | Japan Steel Works Ltd:The | アモルファス膜の結晶化方法および装置 |
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US6624037B2 (en) * | 2001-08-01 | 2003-09-23 | Advanced Micro Devices, Inc. | XE preamorphizing implantation |
JP2004335839A (ja) * | 2003-05-09 | 2004-11-25 | Nec Corp | 半導体薄膜、薄膜トランジスタ、それらの製造方法および半導体薄膜の製造装置 |
TWI359441B (en) | 2003-09-16 | 2012-03-01 | Univ Columbia | Processes and systems for laser crystallization pr |
JP3845650B1 (ja) * | 2005-06-13 | 2006-11-15 | 株式会社日本製鋼所 | レーザ照射方法及びその装置 |
JP2007048794A (ja) * | 2005-08-08 | 2007-02-22 | Japan Steel Works Ltd:The | レーザ投影装置 |
WO2007022302A2 (en) * | 2005-08-16 | 2007-02-22 | The Trustees Of Columbia University In The City Of New York | High throughput crystallization of thin films |
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AU2003272110A8 (en) | 2004-05-13 |
TWI311800B (en) | 2009-07-01 |
KR20040035381A (ko) | 2004-04-29 |
WO2004038775A1 (en) | 2004-05-06 |
US20060126672A1 (en) | 2006-06-15 |
CN1742360A (zh) | 2006-03-01 |
KR100916656B1 (ko) | 2009-09-08 |
CN101121222A (zh) | 2008-02-13 |
US7294538B2 (en) | 2007-11-13 |
AU2003272110A1 (en) | 2004-05-13 |
CN100566907C (zh) | 2009-12-09 |
US8853590B2 (en) | 2014-10-07 |
CN100364053C (zh) | 2008-01-23 |
US20080070386A1 (en) | 2008-03-20 |
TW200421441A (en) | 2004-10-16 |
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