JP2006503448A5 - - Google Patents

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Publication number
JP2006503448A5
JP2006503448A5 JP2003553710A JP2003553710A JP2006503448A5 JP 2006503448 A5 JP2006503448 A5 JP 2006503448A5 JP 2003553710 A JP2003553710 A JP 2003553710A JP 2003553710 A JP2003553710 A JP 2003553710A JP 2006503448 A5 JP2006503448 A5 JP 2006503448A5
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JP
Japan
Prior art keywords
layer
electrode
piezoelectric
substrate
thin film
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JP2003553710A
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English (en)
Japanese (ja)
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JP2006503448A (ja
JP4058001B2 (ja
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Priority claimed from US10/023,594 external-priority patent/US6662419B2/en
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Publication of JP2006503448A publication Critical patent/JP2006503448A/ja
Publication of JP2006503448A5 publication Critical patent/JP2006503448A5/ja
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Publication of JP4058001B2 publication Critical patent/JP4058001B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2003553710A 2001-12-17 2002-12-17 高いｑ値および低い挿入損のｆｂａｒを達成するための構造および製作の手順 Expired - Fee Related JP4058001B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/023,594 US6662419B2 (en) 2001-12-17 2001-12-17 Method for fabricating film bulk acoustic resonators to achieve high-Q and low loss
PCT/US2002/040505 WO2003052929A1 (en) 2001-12-17 2002-12-17 Structure and fabrication procedures to achieve high-q and low insertion loss film bulk acoustic resonators

Publications (3)

Publication Number Publication Date
JP2006503448A JP2006503448A (ja) 2006-01-26
JP2006503448A5 true JP2006503448A5 (enExample) 2007-12-13
JP4058001B2 JP4058001B2 (ja) 2008-03-05

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ID=21816084

Family Applications (1)

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JP2003553710A Expired - Fee Related JP4058001B2 (ja) 2001-12-17 2002-12-17 高いｑ値および低い挿入損のｆｂａｒを達成するための構造および製作の手順

Country Status (8)

Country Link
US (3) US6662419B2 (enExample)
EP (1) EP1464116A1 (enExample)
JP (1) JP4058001B2 (enExample)
CN (1) CN1620755B (enExample)
AU (1) AU2002357317A1 (enExample)
MY (1) MY129488A (enExample)
TW (1) TWI264139B (enExample)
WO (1) WO2003052929A1 (enExample)

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US11411169B2 (en) * 2017-10-16 2022-08-09 Akoustis, Inc. Methods of forming group III piezoelectric thin films via removal of portions of first sputtered material
US11316496B2 (en) * 2016-03-11 2022-04-26 Akoustis, Inc. Method and structure for high performance resonance circuit with single crystal piezoelectric capacitor dielectric material
US11832521B2 (en) * 2017-10-16 2023-11-28 Akoustis, Inc. Methods of forming group III-nitride single crystal piezoelectric thin films using ordered deposition and stress neutral template layers
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US10466572B2 (en) * 2017-03-24 2019-11-05 Zhuhai Crystal Resonance Technologies Co., Ltd. Method of fabrication for single crystal piezoelectric RF resonators and filters
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JP7298991B2 (ja) * 2018-01-22 2023-06-27 太陽誘電株式会社 圧電薄膜共振器、フィルタおよびマルチプレクサ
CN110120793B (zh) * 2018-02-05 2024-11-12 武汉衍熙微器件有限公司 具有非c轴优选压电层的薄膜体声波谐振器
CN114286873A (zh) * 2019-08-15 2022-04-05 阿库斯蒂斯有限公司 经由去除第一溅射材料的部分而形成iii族压电薄膜的方法
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