JP2006503448A - 高いq値および低い挿入損のfbarを達成するための構造および製作の手順 - Google Patents
高いq値および低い挿入損のfbarを達成するための構造および製作の手順 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title description 10
- 238000003780 insertion Methods 0.000 title description 7
- 230000037431 insertion Effects 0.000 title description 7
- 239000000758 substrate Substances 0.000 claims abstract description 155
- 239000010409 thin film Substances 0.000 claims abstract description 97
- 239000000463 material Substances 0.000 claims abstract description 55
- 238000000151 deposition Methods 0.000 claims abstract description 18
- 239000013078 crystal Substances 0.000 claims description 36
- 239000002184 metal Substances 0.000 description 37
- 229910052751 metal Inorganic materials 0.000 description 37
- 238000005530 etching Methods 0.000 description 27
- 239000010408 film Substances 0.000 description 21
- 230000009471 action Effects 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 230000008021 deposition Effects 0.000 description 6
- 239000003989 dielectric material Substances 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
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- 230000000694 effects Effects 0.000 description 3
- 239000012811 non-conductive material Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 239000011149 active material Substances 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
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- 230000008569 process Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49005—Acoustic transducer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
- Y10T29/4908—Acoustic transducer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
- Y10T29/49156—Manufacturing circuit on or in base with selective destruction of conductive paths
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- Manufacturing & Machinery (AREA)
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- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
Claims (27)
- 基板上に形成された圧電薄膜共振器であって、前記圧電薄膜共振器は圧電材料の層を備え、前記圧電材料の層が、
前記基板に近接する第1表面と、
前記基板の表面から遠位に位置する第2表面と、
前記圧電材料の層の前記第1表面と接触している部分を含み、非平面状である第1導電層と、
前記圧電材料の層の前記第2表面に接する第2導電層と
を備える、圧電薄膜共振器。 - 前記第1導電層および前記第2導電層が、前記圧電材料の層の前記第1表面および前記第2表面に堆積する、請求項1に記載の圧電薄膜共振器。
- 前記圧電材料の層が単結晶薄膜である、請求項1に記載の圧電薄膜共振器。
- 前記圧電材料の層がAlNである、請求項3に記載の圧電薄膜共振器。
- 前記圧電材料の層がZnOである、請求項3に記載の圧電薄膜共振器。
- 前記圧電材料の層がc軸配向させられた薄膜である、請求項3に記載の圧電薄膜共振器。
- 前記圧電材料の層が、
c軸配向した部分と、
c軸配向していない部分と
を備え、
少なくとも前記第1導電層の一部分および前記第2の導電層の一部分が、前記圧電材料の層の一部分の前記c軸配向した部分と近接している、
請求項1に記載の圧電薄膜共振器。 - 前記第1導電層が、
第1平面部分と、
第2平面部分と
を備え、
前記第1平面部分および前記第2平面部分が異なる平面に表面をそれぞれ備える、
請求項1に記載の圧電薄膜共振器。 - 基板にデバイスを形成する方法であって、
前記基板上に第1電極の第1部分を堆積させるステップと、
前記基板および前記第1電極の前記第1部分の一部分の上に、前記基板に近接した第1表面と基板から離間した第2表面を備える圧電層を堆積させるステップと、
前記圧電層の前記第2表面に第2電極を配置するステップと、
前記圧電層の下部の、および前記第1電極の前記一部分の下部にある前記基板の一部分を除去するステップと、
前記圧電薄膜層の前記第1表面上に、および前記第1電極の前記第1部分上に前記第1電極の第2部分を堆積させるステップと
を備える、方法。 - 前記圧電層は単結晶圧電薄膜である、請求項9に記載の方法。
- 前記圧電層の前記第1表面の一部分を除去するステップを更に備える、請求項9に記載の方法。
- 前記第1電極の前記第1部分の一部分を除去するステップを更に備える、請求項11に記載の方法。
- 前記第1電極の前記第1部分と前記第1電極の前記第2部分とを電気的に接触させるステップを更に備える、請求項9に記載の方法。
- 基板にデバイスを形成する方法であって、
前記基板上に第1電極の第1部分を配置するステップと、
前記基板上に対して、および前記第1電極の前記第1部分の一部分の上に対して、前記基板に近接した第1表面と基板から離間した第2表面とを備える圧電層を配置するステップと、
前記圧電層の前記第2表面に第2電極を配置するステップと、
前記圧電層の下部に存在する、および前記第1電極の前記一部分の下部に存在する前記基板の一部分を除去するステップと、
前記圧電薄膜層の前記第1表面上に対して、および前記第1電極の前記第1部分上に対して、前記第1電極の前記第2部分を配置するステップと
を備える、方法。 - 前記基板上に種子層を配置するステップを更に備える、請求項14に記載の方法。
- 前記種子層が非導電性である、請求項15に記載の方法。
- 前記圧電層の前記第1表面の一部分を除去するステップを更に備える、請求項14に記載の方法。
- 前記圧電層の下部に存在する、および前記第1電極の一部分の下部に存在する前記種子層の一部分を除去するステップを更に備える、請求項15に記載の方法。
- 前記種子層が単結晶種子層である、請求項15に記載の方法。
- 前記種子層が単結晶圧電薄膜を成長させる事が可能である、請求項15に記載の方法。
- 前記種子層が導電性である、請求項15に記載の方法。
- 前記圧電層の前記第1表面の一部分を除去するステップを更に備える、請求項21に記載の方法。
- 基板にデバイスを形成する方法であって、
前記基板上に誘電体層を堆積するステップと、
前記誘電体層上に種子層を堆積するステップと、
前記誘電体層上に第1電極の第1部分を堆積するステップと、
前記誘電体層上に対して、および前記第1電極の前記第1部分の一部分の上に対して、前記基板に近接している第1表面と前記基板から離間している第2表面を備える圧電層を堆積するステップと、
前記圧電層の前記第2表面に第2電極を配置するステップと、
前記圧電層の下部に存在する、および前記第1電極の前記一部分の下部に存在する前記基板の一部分を除去するステップと、
前記圧電層の下部に存在する、および前記第1電極の前記一部分の下部に存在する前記誘電体層の一部分を除去するステップと、
前記圧電層の下部に存在する、および前記第1電極の前記一部分の下部に存在する前記種子層の一部分を除去するステップと、
前記圧電薄膜層の第1表面上に対して、および前記第1電極の前記第1部分上に対して、前記第1電極の第2部分を堆積するステップと
を備える、方法。 - 前記種子層が非導電性である、請求項23に記載の方法。
- 前記圧電層の前記第1表面の一部分を除去するステップを更に備える、請求項24に記載の方法。
- 前記種子層が導電性である、請求項23に記載の方法。
- 前記圧電層の前記第1表面の一部分を除去するステップを更に備える、請求項26に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/023,594 US6662419B2 (en) | 2001-12-17 | 2001-12-17 | Method for fabricating film bulk acoustic resonators to achieve high-Q and low loss |
PCT/US2002/040505 WO2003052929A1 (en) | 2001-12-17 | 2002-12-17 | Structure and fabrication procedures to achieve high-q and low insertion loss film bulk acoustic resonators |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006503448A true JP2006503448A (ja) | 2006-01-26 |
JP2006503448A5 JP2006503448A5 (ja) | 2007-12-13 |
JP4058001B2 JP4058001B2 (ja) | 2008-03-05 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2003553710A Expired - Fee Related JP4058001B2 (ja) | 2001-12-17 | 2002-12-17 | 高いq値および低い挿入損のfbarを達成するための構造および製作の手順 |
Country Status (8)
Country | Link |
---|---|
US (3) | US6662419B2 (ja) |
EP (1) | EP1464116A1 (ja) |
JP (1) | JP4058001B2 (ja) |
CN (1) | CN1620755B (ja) |
AU (1) | AU2002357317A1 (ja) |
MY (1) | MY129488A (ja) |
TW (1) | TWI264139B (ja) |
WO (1) | WO2003052929A1 (ja) |
Cited By (3)
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JP2008042878A (ja) * | 2006-07-07 | 2008-02-21 | Ngk Insulators Ltd | 圧電薄膜デバイス |
JP2019129348A (ja) * | 2018-01-22 | 2019-08-01 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタおよびマルチプレクサ |
WO2021220544A1 (ja) * | 2020-04-30 | 2021-11-04 | 株式会社村田製作所 | 圧電振動子及びそれを備える圧電発振器 |
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2001
- 2001-12-17 US US10/023,594 patent/US6662419B2/en not_active Expired - Lifetime
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2002
- 2002-11-28 TW TW091134597A patent/TWI264139B/zh not_active IP Right Cessation
- 2002-12-12 MY MYPI20024661A patent/MY129488A/en unknown
- 2002-12-17 AU AU2002357317A patent/AU2002357317A1/en not_active Abandoned
- 2002-12-17 CN CN028281632A patent/CN1620755B/zh not_active Expired - Fee Related
- 2002-12-17 JP JP2003553710A patent/JP4058001B2/ja not_active Expired - Fee Related
- 2002-12-17 WO PCT/US2002/040505 patent/WO2003052929A1/en active Application Filing
- 2002-12-17 EP EP02805205A patent/EP1464116A1/en not_active Withdrawn
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- 2003-11-19 US US10/716,750 patent/US6861783B2/en not_active Expired - Lifetime
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JP2008042878A (ja) * | 2006-07-07 | 2008-02-21 | Ngk Insulators Ltd | 圧電薄膜デバイス |
JP2019129348A (ja) * | 2018-01-22 | 2019-08-01 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタおよびマルチプレクサ |
WO2021220544A1 (ja) * | 2020-04-30 | 2021-11-04 | 株式会社村田製作所 | 圧電振動子及びそれを備える圧電発振器 |
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US6861783B2 (en) | 2005-03-01 |
AU2002357317A1 (en) | 2003-06-30 |
CN1620755B (zh) | 2011-06-22 |
CN1620755A (zh) | 2005-05-25 |
TWI264139B (en) | 2006-10-11 |
MY129488A (en) | 2007-04-30 |
WO2003052929A1 (en) | 2003-06-26 |
US20050140246A1 (en) | 2005-06-30 |
US20040104640A1 (en) | 2004-06-03 |
JP4058001B2 (ja) | 2008-03-05 |
US20030112095A1 (en) | 2003-06-19 |
US7116034B2 (en) | 2006-10-03 |
EP1464116A1 (en) | 2004-10-06 |
TW200301576A (en) | 2003-07-01 |
US6662419B2 (en) | 2003-12-16 |
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