MY129488A - Method for fabricating film bulk acoustic resonators to achieve high-q and low loss - Google Patents

Method for fabricating film bulk acoustic resonators to achieve high-q and low loss

Info

Publication number
MY129488A
MY129488A MYPI20024661A MYPI20024661A MY129488A MY 129488 A MY129488 A MY 129488A MY PI20024661 A MYPI20024661 A MY PI20024661A MY PI20024661 A MYPI20024661 A MY PI20024661A MY 129488 A MY129488 A MY 129488A
Authority
MY
Malaysia
Prior art keywords
bulk acoustic
film bulk
achieve high
low loss
acoustic resonators
Prior art date
Application number
MYPI20024661A
Other languages
English (en)
Inventor
Wang Li-Peng
Ma Qing
Rao Valluri
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of MY129488A publication Critical patent/MY129488A/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/174—Membranes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49005—Acoustic transducer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/4908—Acoustic transducer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base
    • Y10T29/49156—Manufacturing circuit on or in base with selective destruction of conductive paths

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
MYPI20024661A 2001-12-17 2002-12-12 Method for fabricating film bulk acoustic resonators to achieve high-q and low loss MY129488A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/023,594 US6662419B2 (en) 2001-12-17 2001-12-17 Method for fabricating film bulk acoustic resonators to achieve high-Q and low loss

Publications (1)

Publication Number Publication Date
MY129488A true MY129488A (en) 2007-04-30

Family

ID=21816084

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI20024661A MY129488A (en) 2001-12-17 2002-12-12 Method for fabricating film bulk acoustic resonators to achieve high-q and low loss

Country Status (8)

Country Link
US (3) US6662419B2 (enExample)
EP (1) EP1464116A1 (enExample)
JP (1) JP4058001B2 (enExample)
CN (1) CN1620755B (enExample)
AU (1) AU2002357317A1 (enExample)
MY (1) MY129488A (enExample)
TW (1) TWI264139B (enExample)
WO (1) WO2003052929A1 (enExample)

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US6828713B2 (en) * 2002-07-30 2004-12-07 Agilent Technologies, Inc Resonator with seed layer
US6816035B2 (en) * 2002-08-08 2004-11-09 Intel Corporation Forming film bulk acoustic resonator filters
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US11411169B2 (en) * 2017-10-16 2022-08-09 Akoustis, Inc. Methods of forming group III piezoelectric thin films via removal of portions of first sputtered material
US11832521B2 (en) * 2017-10-16 2023-11-28 Akoustis, Inc. Methods of forming group III-nitride single crystal piezoelectric thin films using ordered deposition and stress neutral template layers
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US11316496B2 (en) * 2016-03-11 2022-04-26 Akoustis, Inc. Method and structure for high performance resonance circuit with single crystal piezoelectric capacitor dielectric material
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US10466572B2 (en) * 2017-03-24 2019-11-05 Zhuhai Crystal Resonance Technologies Co., Ltd. Method of fabrication for single crystal piezoelectric RF resonators and filters
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US11856858B2 (en) 2017-10-16 2023-12-26 Akoustis, Inc. Methods of forming doped crystalline piezoelectric thin films via MOCVD and related doped crystalline piezoelectric thin films
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WO2021220544A1 (ja) * 2020-04-30 2021-11-04 株式会社村田製作所 圧電振動子及びそれを備える圧電発振器
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Also Published As

Publication number Publication date
AU2002357317A1 (en) 2003-06-30
US7116034B2 (en) 2006-10-03
US20040104640A1 (en) 2004-06-03
US20030112095A1 (en) 2003-06-19
US6861783B2 (en) 2005-03-01
EP1464116A1 (en) 2004-10-06
TW200301576A (en) 2003-07-01
US6662419B2 (en) 2003-12-16
CN1620755B (zh) 2011-06-22
WO2003052929A1 (en) 2003-06-26
TWI264139B (en) 2006-10-11
US20050140246A1 (en) 2005-06-30
CN1620755A (zh) 2005-05-25
JP2006503448A (ja) 2006-01-26
JP4058001B2 (ja) 2008-03-05

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