TWI264139B - Structure and fabrication procedures to achieve high-Q and low insertion loss film bulk acoustic resonators - Google Patents
Structure and fabrication procedures to achieve high-Q and low insertion loss film bulk acoustic resonators Download PDFInfo
- Publication number
- TWI264139B TWI264139B TW091134597A TW91134597A TWI264139B TW I264139 B TWI264139 B TW I264139B TW 091134597 A TW091134597 A TW 091134597A TW 91134597 A TW91134597 A TW 91134597A TW I264139 B TWI264139 B TW I264139B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- electrode
- substrate
- piezoelectric
- film
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title description 10
- 238000003780 insertion Methods 0.000 title description 7
- 230000037431 insertion Effects 0.000 title description 7
- 239000000758 substrate Substances 0.000 claims abstract description 163
- 239000000463 material Substances 0.000 claims abstract description 57
- 238000000151 deposition Methods 0.000 claims abstract description 17
- 239000013078 crystal Substances 0.000 claims description 38
- 239000010408 film Substances 0.000 description 104
- 229910052751 metal Inorganic materials 0.000 description 34
- 239000002184 metal Substances 0.000 description 34
- 238000005530 etching Methods 0.000 description 14
- 238000001465 metallisation Methods 0.000 description 11
- 239000004020 conductor Substances 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical group [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 239000012811 non-conductive material Substances 0.000 description 4
- 229910052770 Uranium Inorganic materials 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000011104 metalized film Substances 0.000 description 3
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 239000011149 active material Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000003708 edge detection Methods 0.000 description 1
- 230000002496 gastric effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49005—Acoustic transducer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
- Y10T29/4908—Acoustic transducer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
- Y10T29/49156—Manufacturing circuit on or in base with selective destruction of conductive paths
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/023,594 US6662419B2 (en) | 2001-12-17 | 2001-12-17 | Method for fabricating film bulk acoustic resonators to achieve high-Q and low loss |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200301576A TW200301576A (en) | 2003-07-01 |
| TWI264139B true TWI264139B (en) | 2006-10-11 |
Family
ID=21816084
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091134597A TWI264139B (en) | 2001-12-17 | 2002-11-28 | Structure and fabrication procedures to achieve high-Q and low insertion loss film bulk acoustic resonators |
Country Status (8)
| Country | Link |
|---|---|
| US (3) | US6662419B2 (enExample) |
| EP (1) | EP1464116A1 (enExample) |
| JP (1) | JP4058001B2 (enExample) |
| CN (1) | CN1620755B (enExample) |
| AU (1) | AU2002357317A1 (enExample) |
| MY (1) | MY129488A (enExample) |
| TW (1) | TWI264139B (enExample) |
| WO (1) | WO2003052929A1 (enExample) |
Families Citing this family (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020158947A1 (en) * | 2001-04-27 | 2002-10-31 | Isaku Kanno | Piezoelectric element, method for manufacturing piezoelectric element, and ink jet head and ink jet recording apparatus having piezoelectric element |
| US6662419B2 (en) * | 2001-12-17 | 2003-12-16 | Intel Corporation | Method for fabricating film bulk acoustic resonators to achieve high-Q and low loss |
| US20030119308A1 (en) * | 2001-12-20 | 2003-06-26 | Geefay Frank S. | Sloped via contacts |
| US6828713B2 (en) * | 2002-07-30 | 2004-12-07 | Agilent Technologies, Inc | Resonator with seed layer |
| US6816035B2 (en) * | 2002-08-08 | 2004-11-09 | Intel Corporation | Forming film bulk acoustic resonator filters |
| WO2004088840A1 (ja) * | 2003-03-31 | 2004-10-14 | Ube Industries, Ltd. | 圧電薄膜デバイス及びその製造方法 |
| US6954121B2 (en) * | 2003-06-09 | 2005-10-11 | Agilent Technologies, Inc. | Method for controlling piezoelectric coupling coefficient in film bulk acoustic resonators and apparatus embodying the method |
| KR100662865B1 (ko) * | 2003-10-08 | 2007-01-02 | 삼성전자주식회사 | 박막 벌크 음향 공진기 및 그 제조방법 |
| JP4373949B2 (ja) * | 2004-04-20 | 2009-11-25 | 株式会社東芝 | 薄膜圧電共振器及びその製造方法 |
| US7114252B2 (en) * | 2004-06-17 | 2006-10-03 | Toko, Inc. | Large scale simultaneous circuit encapsulating apparatus |
| US20060001329A1 (en) * | 2004-06-30 | 2006-01-05 | Valluri Rao | FBAR device frequency stabilized against temperature drift |
| US20060017352A1 (en) * | 2004-07-20 | 2006-01-26 | Aram Tanielian | Thin device and method of fabrication |
| JP2006148402A (ja) * | 2004-11-18 | 2006-06-08 | Matsushita Electric Ind Co Ltd | 共振器の製造方法 |
| US20070063777A1 (en) * | 2005-08-26 | 2007-03-22 | Mircea Capanu | Electrostrictive devices |
| US7528681B2 (en) * | 2005-12-20 | 2009-05-05 | Palo Alto Research Center Incorporated | Acoustic devices using an AlGaN piezoelectric region |
| JP4811924B2 (ja) * | 2006-02-24 | 2011-11-09 | 日本碍子株式会社 | 圧電薄膜デバイス |
| JP5027534B2 (ja) * | 2006-07-07 | 2012-09-19 | 日本碍子株式会社 | 圧電薄膜デバイス |
| CN101796726B (zh) * | 2007-08-24 | 2014-04-02 | 太阳诱电株式会社 | 压电薄膜谐振器、使用该压电薄膜谐振器的滤波器、使用该滤波器的双工器、以及使用该滤波器或该双工器的通信设备 |
| US8291559B2 (en) * | 2009-02-24 | 2012-10-23 | Epcos Ag | Process for adapting resonance frequency of a BAW resonator |
| JP5319491B2 (ja) * | 2009-10-22 | 2013-10-16 | 太陽誘電株式会社 | 圧電薄膜共振子 |
| US9525399B2 (en) * | 2011-10-31 | 2016-12-20 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Planarized electrode for improved performance in bulk acoustic resonators |
| TWI493868B (zh) * | 2013-01-02 | 2015-07-21 | Ind Tech Res Inst | 微機電共振裝置 |
| FR3004289B1 (fr) | 2013-04-08 | 2015-05-15 | Soitec Silicon On Insulator | Composant a ondes acoustiques de surface et sa methode de fabrication |
| US9374059B1 (en) * | 2015-01-06 | 2016-06-21 | Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd. | Film bulk acoustic resonator filter |
| KR101730335B1 (ko) * | 2015-01-27 | 2017-04-27 | 주하이 어드밴스드 칩 캐리어스 앤드 일렉트로닉 서브스트레이트 솔루션즈 테크놀러지즈 컴퍼니 리미티드 | 필름 벌크 음향 공진기 필터 제조 방법 |
| US11411169B2 (en) * | 2017-10-16 | 2022-08-09 | Akoustis, Inc. | Methods of forming group III piezoelectric thin films via removal of portions of first sputtered material |
| US11832521B2 (en) * | 2017-10-16 | 2023-11-28 | Akoustis, Inc. | Methods of forming group III-nitride single crystal piezoelectric thin films using ordered deposition and stress neutral template layers |
| US11411168B2 (en) | 2017-10-16 | 2022-08-09 | Akoustis, Inc. | Methods of forming group III piezoelectric thin films via sputtering |
| US11316496B2 (en) * | 2016-03-11 | 2022-04-26 | Akoustis, Inc. | Method and structure for high performance resonance circuit with single crystal piezoelectric capacitor dielectric material |
| US11895920B2 (en) | 2016-08-15 | 2024-02-06 | Akoustis, Inc. | Methods of forming group III piezoelectric thin films via removal of portions of first sputtered material |
| TWI632772B (zh) * | 2016-10-17 | 2018-08-11 | 穩懋半導體股份有限公司 | 具有質量調整結構之體聲波共振器及其應用於體聲波濾波器 |
| US10466572B2 (en) * | 2017-03-24 | 2019-11-05 | Zhuhai Crystal Resonance Technologies Co., Ltd. | Method of fabrication for single crystal piezoelectric RF resonators and filters |
| US10389331B2 (en) * | 2017-03-24 | 2019-08-20 | Zhuhai Crystal Resonance Technologies Co., Ltd. | Single crystal piezoelectric RF resonators and filters |
| CN107809221B (zh) * | 2017-09-27 | 2021-05-11 | 佛山市艾佛光通科技有限公司 | 一种空腔型薄膜体声波谐振器及其制备方法 |
| US11856858B2 (en) | 2017-10-16 | 2023-12-26 | Akoustis, Inc. | Methods of forming doped crystalline piezoelectric thin films via MOCVD and related doped crystalline piezoelectric thin films |
| JP7298991B2 (ja) * | 2018-01-22 | 2023-06-27 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタおよびマルチプレクサ |
| CN110120793B (zh) * | 2018-02-05 | 2024-11-12 | 武汉衍熙微器件有限公司 | 具有非c轴优选压电层的薄膜体声波谐振器 |
| DE112020003868T5 (de) * | 2019-08-15 | 2022-06-15 | Akoustis, Inc. | Verfahren zum Ausbilden von piezoelektrischen Dünnfilmen der Gruppe III durch Entfernen von Abschnitten des zuerst gesputterten Materials |
| US11618968B2 (en) | 2020-02-07 | 2023-04-04 | Akoustis, Inc. | Apparatus including horizontal flow reactor with a central injector column having separate conduits for low-vapor pressure metalorganic precursors and other precursors for formation of piezoelectric layers on wafers |
| US12102010B2 (en) | 2020-03-05 | 2024-09-24 | Akoustis, Inc. | Methods of forming films including scandium at low temperatures using chemical vapor deposition to provide piezoelectric resonator devices and/or high electron mobility transistor devices |
| WO2021220544A1 (ja) * | 2020-04-30 | 2021-11-04 | 株式会社村田製作所 | 圧電振動子及びそれを備える圧電発振器 |
| CN111711900B (zh) * | 2020-07-09 | 2021-12-10 | 京东方科技集团股份有限公司 | 显示面板及其制造方法、显示装置 |
| GB2598665B (en) * | 2020-09-04 | 2025-07-23 | Skyworks Solutions Inc | Multi-layer piezoelectric substrate with controllable delta temperature coefficient of frequency |
| US11990889B2 (en) | 2020-12-28 | 2024-05-21 | Win Semiconductors Corp. | Bulk acoustic wave resonator and formation method thereof |
| US12362724B2 (en) * | 2021-08-20 | 2025-07-15 | Raytheon Company | N-polar rare-earth III-nitride bulk acoustic wave resonator |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4719383A (en) * | 1985-05-20 | 1988-01-12 | The United States Of America As Represented By The United States Department Of Energy | Piezoelectric shear wave resonator and method of making same |
| US5233259A (en) * | 1991-02-19 | 1993-08-03 | Westinghouse Electric Corp. | Lateral field FBAR |
| US5747857A (en) | 1991-03-13 | 1998-05-05 | Matsushita Electric Industrial Co., Ltd. | Electronic components having high-frequency elements and methods of manufacture therefor |
| US5668057A (en) * | 1991-03-13 | 1997-09-16 | Matsushita Electric Industrial Co., Ltd. | Methods of manufacture for electronic components having high-frequency elements |
| JP2531891B2 (ja) | 1991-03-20 | 1996-09-04 | 日本碍子株式会社 | セラミック体の欠陥検出方法 |
| JP3371050B2 (ja) * | 1995-10-27 | 2003-01-27 | 三菱電機株式会社 | 薄膜圧電素子 |
| US5596239A (en) * | 1995-06-29 | 1997-01-21 | Motorola, Inc. | Enhanced quality factor resonator |
| EP1012888B1 (en) * | 1996-10-17 | 2009-03-04 | Avago Technologies Wireless IP (Singapore) Pte. Ltd. | Method for fabricating fbars on glass substrates |
| US5935641A (en) * | 1996-10-23 | 1999-08-10 | Texas Instruments Incorporated | Method of forming a piezoelectric layer with improved texture |
| CN100389538C (zh) * | 1998-04-28 | 2008-05-21 | Tdk株式会社 | 压电体振子 |
| JP3649273B2 (ja) * | 1999-03-16 | 2005-05-18 | セイコーエプソン株式会社 | 圧電体薄膜素子の製造方法 |
| FI107660B (fi) * | 1999-07-19 | 2001-09-14 | Nokia Mobile Phones Ltd | Resonaattorirakenne |
| US6349454B1 (en) * | 1999-07-29 | 2002-02-26 | Agere Systems Guardian Corp. | Method of making thin film resonator apparatus |
| US6456173B1 (en) * | 2001-02-15 | 2002-09-24 | Nokia Mobile Phones Ltd. | Method and system for wafer-level tuning of bulk acoustic wave resonators and filters |
| US6566979B2 (en) * | 2001-03-05 | 2003-05-20 | Agilent Technologies, Inc. | Method of providing differential frequency adjusts in a thin film bulk acoustic resonator (FBAR) filter and apparatus embodying the method |
| US6483229B2 (en) * | 2001-03-05 | 2002-11-19 | Agilent Technologies, Inc. | Method of providing differential frequency adjusts in a thin film bulk acoustic resonator (FBAR) filter and apparatus embodying the method |
| US6936954B2 (en) * | 2001-08-29 | 2005-08-30 | Honeywell International Inc. | Bulk resonator |
| KR100541895B1 (ko) * | 2001-09-21 | 2006-01-16 | 가부시끼가이샤 도시바 | 고주파 필터 |
| JP3817730B2 (ja) * | 2001-12-10 | 2006-09-06 | セイコーエプソン株式会社 | 圧電アクチュエータの製造方法、インクジェット式記録ヘッド、及びプリンタ |
| US6662419B2 (en) * | 2001-12-17 | 2003-12-16 | Intel Corporation | Method for fabricating film bulk acoustic resonators to achieve high-Q and low loss |
| US6828713B2 (en) * | 2002-07-30 | 2004-12-07 | Agilent Technologies, Inc | Resonator with seed layer |
| US6894360B2 (en) * | 2002-07-30 | 2005-05-17 | Agilent Technologies, Inc. | Electrostatic discharge protection of thin-film resonators |
| US6816035B2 (en) * | 2002-08-08 | 2004-11-09 | Intel Corporation | Forming film bulk acoustic resonator filters |
-
2001
- 2001-12-17 US US10/023,594 patent/US6662419B2/en not_active Expired - Lifetime
-
2002
- 2002-11-28 TW TW091134597A patent/TWI264139B/zh not_active IP Right Cessation
- 2002-12-12 MY MYPI20024661A patent/MY129488A/en unknown
- 2002-12-17 JP JP2003553710A patent/JP4058001B2/ja not_active Expired - Fee Related
- 2002-12-17 AU AU2002357317A patent/AU2002357317A1/en not_active Abandoned
- 2002-12-17 CN CN028281632A patent/CN1620755B/zh not_active Expired - Fee Related
- 2002-12-17 WO PCT/US2002/040505 patent/WO2003052929A1/en not_active Ceased
- 2002-12-17 EP EP02805205A patent/EP1464116A1/en not_active Withdrawn
-
2003
- 2003-11-19 US US10/716,750 patent/US6861783B2/en not_active Expired - Lifetime
-
2005
- 2005-02-23 US US11/065,511 patent/US7116034B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| MY129488A (en) | 2007-04-30 |
| AU2002357317A1 (en) | 2003-06-30 |
| US7116034B2 (en) | 2006-10-03 |
| US20040104640A1 (en) | 2004-06-03 |
| US20030112095A1 (en) | 2003-06-19 |
| US6861783B2 (en) | 2005-03-01 |
| EP1464116A1 (en) | 2004-10-06 |
| TW200301576A (en) | 2003-07-01 |
| US6662419B2 (en) | 2003-12-16 |
| CN1620755B (zh) | 2011-06-22 |
| WO2003052929A1 (en) | 2003-06-26 |
| US20050140246A1 (en) | 2005-06-30 |
| CN1620755A (zh) | 2005-05-25 |
| JP2006503448A (ja) | 2006-01-26 |
| JP4058001B2 (ja) | 2008-03-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI264139B (en) | Structure and fabrication procedures to achieve high-Q and low insertion loss film bulk acoustic resonators | |
| JP2006503448A5 (enExample) | ||
| US6940367B2 (en) | Forming film bulk acoustic resonator filters | |
| US6917139B2 (en) | Film bulk acoustic resonator | |
| JP3703773B2 (ja) | 水晶振動子の製造方法 | |
| WO2005060091A1 (ja) | 圧電薄膜デバイスの製造方法および圧電薄膜デバイス | |
| TW200408190A (en) | Manufacturing film bulk acoustic resonator filters | |
| CN113708740B (zh) | 压电薄膜体声波谐振器及其制备方法 | |
| WO2021135022A1 (zh) | 带电学隔离层的体声波谐振器及其制造方法、滤波器及电子设备 | |
| CN116155224A (zh) | 一种体声波滤波器及其制造方法和电子装置 | |
| CN113630099A (zh) | 体声波谐振器及制造方法、体声波谐振器组件、滤波器及电子设备 | |
| CN1620752B (zh) | 薄膜体声波谐振器结构及其制造方法 | |
| JP2005303573A (ja) | 薄膜圧電共振器及びその製造方法 | |
| KR100697398B1 (ko) | 압전 필터 제조 방법 | |
| JP2005033379A (ja) | 薄膜バルク波振動子およびその製造方法 | |
| KR100791657B1 (ko) | 하이브리드 집적 회로 제조 방법 | |
| CN110289824A (zh) | 薄膜体声波谐振器及其制备方法 | |
| KR20040035488A (ko) | 체적탄성파 소자 및 그 제조방법 | |
| CN115714587A (zh) | 一种滤波器以及滤波器的制备方法 | |
| CN115882804A (zh) | 一种体声波谐振器及其制造方法和电子装置 | |
| KR20040073227A (ko) | 실리콘 국부 산화를 이용한 멤브레인 구조 제조 방법 및멤브레인 구조 | |
| CN116707474A (zh) | 一种压电层改进型体声波谐振器的制备方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |