JP2006503387A5 - - Google Patents

Download PDF

Info

Publication number
JP2006503387A5
JP2006503387A5 JP2004517531A JP2004517531A JP2006503387A5 JP 2006503387 A5 JP2006503387 A5 JP 2006503387A5 JP 2004517531 A JP2004517531 A JP 2004517531A JP 2004517531 A JP2004517531 A JP 2004517531A JP 2006503387 A5 JP2006503387 A5 JP 2006503387A5
Authority
JP
Japan
Prior art keywords
write
data value
memory
predetermined
lines
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004517531A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006503387A (ja
JP4388889B2 (ja
Filing date
Publication date
Priority claimed from US10/185,488 external-priority patent/US6711052B2/en
Application filed filed Critical
Publication of JP2006503387A publication Critical patent/JP2006503387A/ja
Publication of JP2006503387A5 publication Critical patent/JP2006503387A5/ja
Application granted granted Critical
Publication of JP4388889B2 publication Critical patent/JP4388889B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP2004517531A 2002-06-28 2003-05-01 プレチャージ回路を有するメモリおよびそのプレチャージ方法 Expired - Lifetime JP4388889B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/185,488 US6711052B2 (en) 2002-06-28 2002-06-28 Memory having a precharge circuit and method therefor
PCT/US2003/013750 WO2004003923A2 (en) 2002-06-28 2003-05-01 Memory having a precharge circuit and method therefor

Publications (3)

Publication Number Publication Date
JP2006503387A JP2006503387A (ja) 2006-01-26
JP2006503387A5 true JP2006503387A5 (enExample) 2006-06-22
JP4388889B2 JP4388889B2 (ja) 2009-12-24

Family

ID=29779641

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004517531A Expired - Lifetime JP4388889B2 (ja) 2002-06-28 2003-05-01 プレチャージ回路を有するメモリおよびそのプレチャージ方法

Country Status (6)

Country Link
US (1) US6711052B2 (enExample)
EP (1) EP1581951A2 (enExample)
JP (1) JP4388889B2 (enExample)
AU (1) AU2003232038A1 (enExample)
TW (1) TWI287233B (enExample)
WO (1) WO2004003923A2 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002230965A (ja) * 2001-01-24 2002-08-16 Internatl Business Mach Corp <Ibm> 不揮発性メモリ装置
CA2455766C (en) * 2001-07-31 2011-02-08 Tyco Healthcare Group Lp Bioabsorbable adhesive compounds and compositions
US7020008B2 (en) * 2001-12-26 2006-03-28 Renesas Technology Corp. Thin film magnetic memory device writing data with bidirectional current
US6873542B2 (en) * 2002-10-03 2005-03-29 International Business Machines Corporation Antiferromagnetically coupled bi-layer sensor for magnetic random access memory
JP4283011B2 (ja) * 2003-03-13 2009-06-24 Ｔｄｋ株式会社 磁気メモリデバイスおよびその読出方法
US7286378B2 (en) * 2003-11-04 2007-10-23 Micron Technology, Inc. Serial transistor-cell array architecture
US7502248B2 (en) * 2004-05-21 2009-03-10 Samsung Electronics Co., Ltd. Multi-bit magnetic random access memory device
US7102916B2 (en) * 2004-06-30 2006-09-05 International Business Machines Corporation Method and structure for selecting anisotropy axis angle of MRAM device for reduced power consumption
DE102005001667B4 (de) * 2005-01-13 2011-04-21 Qimonda Ag Nichtflüchtige Speicherzelle zum Speichern eines Datums in einer integrierten Schaltung
US7269050B2 (en) * 2005-06-07 2007-09-11 Spansion Llc Method of programming a memory device
US7206223B1 (en) 2005-12-07 2007-04-17 Freescale Semiconductor, Inc. MRAM memory with residual write field reset
US7280388B2 (en) * 2005-12-07 2007-10-09 Nahas Joseph J MRAM with a write driver and method therefor
EP1863034B1 (en) * 2006-05-04 2011-01-05 Hitachi, Ltd. Magnetic memory device
KR100855965B1 (ko) * 2007-01-04 2008-09-02 삼성전자주식회사 서브 셀 어레이를 구비하는 양방향성 ｒｒａｍ 및 이를이용하는 데이터 기입 방법
US7880209B2 (en) * 2008-10-09 2011-02-01 Seagate Technology Llc MRAM cells including coupled free ferromagnetic layers for stabilization
US8102720B2 (en) * 2009-02-02 2012-01-24 Qualcomm Incorporated System and method of pulse generation
US8279659B2 (en) * 2009-11-12 2012-10-02 Qualcomm Incorporated System and method of operating a memory device
US9183910B2 (en) 2012-05-31 2015-11-10 Samsung Electronics Co., Ltd. Semiconductor memory devices for alternately selecting bit lines
WO2014058994A2 (en) * 2012-10-11 2014-04-17 Everspin Technologies, Inc. Memory device with timing overlap mode
CN114974340A (zh) * 2021-02-27 2022-08-30 华为技术有限公司 一种存储装置
US12249365B2 (en) * 2023-03-06 2025-03-11 Windbond Electronics Corp. Memory device capable of performing in-memory computing

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS568435B2 (enExample) * 1972-09-19 1981-02-24
US4713797A (en) * 1985-11-25 1987-12-15 Motorola Inc. Current mirror sense amplifier for a non-volatile memory
US5777923A (en) * 1996-06-17 1998-07-07 Aplus Integrated Circuits, Inc. Flash memory read/write controller
US6256224B1 (en) * 2000-05-03 2001-07-03 Hewlett-Packard Co Write circuit for large MRAM arrays
US6236611B1 (en) * 1999-12-20 2001-05-22 Motorola, Inc. Peak program current reduction apparatus and method
JP4726290B2 (ja) * 2000-10-17 2011-07-20 ルネサスエレクトロニクス株式会社 半導体集積回路
JP4667594B2 (ja) * 2000-12-25 2011-04-13 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置

Similar Documents

Publication Publication Date Title
JP2006503387A5 (enExample)
US8392770B2 (en) Resistance change memory device having high-speed two-step write mode
KR100827702B1 (ko) 가변저항 반도체 메모리 장치
US6791869B2 (en) Nonvolatile memory device with configuration switching the number of memory cells used for one-bit data storage
EP1835508B1 (en) Pram and associated operation method and system
US8238138B2 (en) Semiconductor memory device and its operation method
JP2004134026A (ja) 半導体記憶装置及びその制御方法
CN101833992B (zh) 具有冗余存储单元的相变随机存储器系统
CN104733047A (zh) 一种包括参考单元的rram子阵列结构
TWI837688B (zh) 記憶體元件、感測放大器系統及其控制方法
US7280391B2 (en) Phase change memory device for use in a burst read operation and a data reading method thereof
CN105118528B (zh) 非挥发性记忆装置、可编程电路以及内容可定址记忆体
JP2003346473A (ja) 薄膜磁性体記憶装置
US9401207B2 (en) Pseudo SRAM using resistive elements for non-volatile storage
JP4428284B2 (ja) 半導体記憶装置およびその書込み方法
KR100379545B1 (ko) Ｓｒａｍ 디바이스의 워드라인 콘트롤 회로
US20250069627A1 (en) Sense amplifier, memory device and operation method thereof
JP2016167333A (ja) 疑似ページモードのメモリアーキテクチャおよび方法
CN115547383B (zh) 一种存储电路及磁性随机存储器读关键电路
CN118116429A (zh) 字线控制电路及磁随机存取存储器
CN101609710B (zh) 感测放大器电路及其数据感测方法
US11495273B2 (en) Write circuit, non-volatile data storage, method for writing to a plurality of memory cells and method for operating a non-volatile data memory
CN111881640B (zh) 电可编程熔丝系统及其编程方法、读取方法
JP2015036995A (ja) 半導体装置及びエラー訂正情報書き込み方法
US20250124975A1 (en) Unit cell circuit and memory device including the same