AU2003232038A1 - Memory having a precharge circuit and method therefor - Google Patents

Memory having a precharge circuit and method therefor

Info

Publication number
AU2003232038A1
AU2003232038A1 AU2003232038A AU2003232038A AU2003232038A1 AU 2003232038 A1 AU2003232038 A1 AU 2003232038A1 AU 2003232038 A AU2003232038 A AU 2003232038A AU 2003232038 A AU2003232038 A AU 2003232038A AU 2003232038 A1 AU2003232038 A1 AU 2003232038A1
Authority
AU
Australia
Prior art keywords
memory
method therefor
precharge circuit
precharge
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003232038A
Other languages
English (en)
Inventor
Thomas W. Andre
Joseph J. Nahas
Chitra K. Subramanian
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of AU2003232038A1 publication Critical patent/AU2003232038A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1655—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1657—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/22—Control and timing of internal memory operations
    • G11C2207/2263—Write conditionally, e.g. only if new data and old data differ

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
AU2003232038A 2002-06-28 2003-05-01 Memory having a precharge circuit and method therefor Abandoned AU2003232038A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/185,488 2002-06-28
US10/185,488 US6711052B2 (en) 2002-06-28 2002-06-28 Memory having a precharge circuit and method therefor
PCT/US2003/013750 WO2004003923A2 (en) 2002-06-28 2003-05-01 Memory having a precharge circuit and method therefor

Publications (1)

Publication Number Publication Date
AU2003232038A1 true AU2003232038A1 (en) 2004-01-19

Family

ID=29779641

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003232038A Abandoned AU2003232038A1 (en) 2002-06-28 2003-05-01 Memory having a precharge circuit and method therefor

Country Status (6)

Country Link
US (1) US6711052B2 (enExample)
EP (1) EP1581951A2 (enExample)
JP (1) JP4388889B2 (enExample)
AU (1) AU2003232038A1 (enExample)
TW (1) TWI287233B (enExample)
WO (1) WO2004003923A2 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002230965A (ja) * 2001-01-24 2002-08-16 Internatl Business Mach Corp <Ibm> 不揮発性メモリ装置
CA2455766C (en) * 2001-07-31 2011-02-08 Tyco Healthcare Group Lp Bioabsorbable adhesive compounds and compositions
US7020008B2 (en) * 2001-12-26 2006-03-28 Renesas Technology Corp. Thin film magnetic memory device writing data with bidirectional current
US6873542B2 (en) * 2002-10-03 2005-03-29 International Business Machines Corporation Antiferromagnetically coupled bi-layer sensor for magnetic random access memory
JP4283011B2 (ja) * 2003-03-13 2009-06-24 Ｔｄｋ株式会社 磁気メモリデバイスおよびその読出方法
US7286378B2 (en) * 2003-11-04 2007-10-23 Micron Technology, Inc. Serial transistor-cell array architecture
US7502248B2 (en) * 2004-05-21 2009-03-10 Samsung Electronics Co., Ltd. Multi-bit magnetic random access memory device
US7102916B2 (en) * 2004-06-30 2006-09-05 International Business Machines Corporation Method and structure for selecting anisotropy axis angle of MRAM device for reduced power consumption
DE102005001667B4 (de) * 2005-01-13 2011-04-21 Qimonda Ag Nichtflüchtige Speicherzelle zum Speichern eines Datums in einer integrierten Schaltung
US7269050B2 (en) * 2005-06-07 2007-09-11 Spansion Llc Method of programming a memory device
US7206223B1 (en) 2005-12-07 2007-04-17 Freescale Semiconductor, Inc. MRAM memory with residual write field reset
US7280388B2 (en) * 2005-12-07 2007-10-09 Nahas Joseph J MRAM with a write driver and method therefor
EP1863034B1 (en) * 2006-05-04 2011-01-05 Hitachi, Ltd. Magnetic memory device
KR100855965B1 (ko) * 2007-01-04 2008-09-02 삼성전자주식회사 서브 셀 어레이를 구비하는 양방향성 ｒｒａｍ 및 이를이용하는 데이터 기입 방법
US7880209B2 (en) * 2008-10-09 2011-02-01 Seagate Technology Llc MRAM cells including coupled free ferromagnetic layers for stabilization
US8102720B2 (en) * 2009-02-02 2012-01-24 Qualcomm Incorporated System and method of pulse generation
US8279659B2 (en) * 2009-11-12 2012-10-02 Qualcomm Incorporated System and method of operating a memory device
US9183910B2 (en) 2012-05-31 2015-11-10 Samsung Electronics Co., Ltd. Semiconductor memory devices for alternately selecting bit lines
WO2014058994A2 (en) * 2012-10-11 2014-04-17 Everspin Technologies, Inc. Memory device with timing overlap mode
CN114974340A (zh) * 2021-02-27 2022-08-30 华为技术有限公司 一种存储装置
US12249365B2 (en) * 2023-03-06 2025-03-11 Windbond Electronics Corp. Memory device capable of performing in-memory computing

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS568435B2 (enExample) * 1972-09-19 1981-02-24
US4713797A (en) * 1985-11-25 1987-12-15 Motorola Inc. Current mirror sense amplifier for a non-volatile memory
US5777923A (en) * 1996-06-17 1998-07-07 Aplus Integrated Circuits, Inc. Flash memory read/write controller
US6256224B1 (en) * 2000-05-03 2001-07-03 Hewlett-Packard Co Write circuit for large MRAM arrays
US6236611B1 (en) * 1999-12-20 2001-05-22 Motorola, Inc. Peak program current reduction apparatus and method
JP4726290B2 (ja) * 2000-10-17 2011-07-20 ルネサスエレクトロニクス株式会社 半導体集積回路
JP4667594B2 (ja) * 2000-12-25 2011-04-13 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置

Also Published As

Publication number Publication date
US6711052B2 (en) 2004-03-23
TWI287233B (en) 2007-09-21
EP1581951A2 (en) 2005-10-05
US20040001351A1 (en) 2004-01-01
TW200414216A (en) 2004-08-01
JP2006503387A (ja) 2006-01-26
JP4388889B2 (ja) 2009-12-24
WO2004003923A3 (en) 2005-08-11
WO2004003923A2 (en) 2004-01-08

Similar Documents

Publication Publication Date Title
AU2003232038A1 (en) Memory having a precharge circuit and method therefor
EP1554732B8 (en) Highly compact non-volatile memory and method thereof
AU2003245588A1 (en) Multiple-mode memory and method for forming same
AU2003241844A1 (en) Nonvolatile memory and its manufacturing method
AU2003221003A1 (en) Non-volatile memory and manufacturing method thereof
AU2003265507A1 (en) Memory hub bypass circuit and method
AU2003241617A1 (en) Memory and access devices
AU2003277017A1 (en) Non-volatile memory device and method for forming
AU2003304192A1 (en) Memory expansion and integrated circuit stacking system and method
AU2003272596A1 (en) Non-volatile memory and its sensing method
AU2002363046A1 (en) Method for erasing a memory cell
AU2003256244A1 (en) An insulated unit and a manufacturing method thereof
AU2003265062A1 (en) Programmable magnetic memory device
EP1576445A3 (en) Methods and apparatus for improved memory access
AU2003246251A1 (en) Magnetic random access memory
AU2003293474A1 (en) Method of address individual memory devices on a memory module
AU2003294845A1 (en) Semiconductor memory and fabrication method
AU2003225301A1 (en) Circuit and method for reading a toggle memory cell
GB2394088B (en) Data output circuit and data output method
AU2003207364A1 (en) Non-volatile memory test structure and method
AU2003271116A1 (en) Compiler and logic circuit design method
AU2003265087A1 (en) Programmable magnetic memory device fp-mram
AU2002351774A1 (en) Non-volatile memory and method for operating a non-volatile memory
AU2003235298A1 (en) Magnetic memory and its operating method
AU2003230400A1 (en) Combined memory

Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase