JP2006344911A - 化合物半導体基板、エピタキシャル基板、化合物半導体基板の製造方法及びエピタキシャル基板の製造方法 - Google Patents
化合物半導体基板、エピタキシャル基板、化合物半導体基板の製造方法及びエピタキシャル基板の製造方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 329
- 150000001875 compounds Chemical class 0.000 title claims abstract description 243
- 239000004065 semiconductor Substances 0.000 title claims abstract description 240
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 239000000126 substance Substances 0.000 claims abstract description 111
- 239000012535 impurity Substances 0.000 claims description 73
- 125000004429 atom Chemical group 0.000 claims description 65
- 239000011701 zinc Substances 0.000 claims description 21
- 238000004140 cleaning Methods 0.000 claims description 19
- 235000014113 dietary fatty acids Nutrition 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 15
- 239000000194 fatty acid Substances 0.000 claims description 15
- 229930195729 fatty acid Natural products 0.000 claims description 15
- 239000011777 magnesium Substances 0.000 claims description 13
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 12
- 229910052718 tin Inorganic materials 0.000 claims description 12
- 125000004432 carbon atom Chemical group C* 0.000 claims description 11
- 150000004665 fatty acids Chemical class 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 10
- 238000001039 wet etching Methods 0.000 claims description 10
- 238000005498 polishing Methods 0.000 claims description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 8
- 150000004945 aromatic hydrocarbons Chemical class 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 6
- 150000002430 hydrocarbons Chemical class 0.000 claims description 6
- 229910052749 magnesium Inorganic materials 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 239000004215 Carbon black (E152) Substances 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical group [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- 229930195733 hydrocarbon Natural products 0.000 claims description 5
- 239000002019 doping agent Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 description 27
- 239000007864 aqueous solution Substances 0.000 description 20
- 239000012298 atmosphere Substances 0.000 description 13
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 6
- 239000003513 alkali Substances 0.000 description 6
- 229910052717 sulfur Inorganic materials 0.000 description 6
- 239000011593 sulfur Substances 0.000 description 6
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000002253 acid Substances 0.000 description 5
- 235000011114 ammonium hydroxide Nutrition 0.000 description 5
- -1 fatty acid ester Chemical class 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 150000007524 organic acids Chemical class 0.000 description 4
- 150000003377 silicon compounds Chemical class 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 3
- 238000001336 glow discharge atomic emission spectroscopy Methods 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 229910021642 ultra pure water Inorganic materials 0.000 description 3
- 239000012498 ultrapure water Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- PHFQLYPOURZARY-UHFFFAOYSA-N chromium trinitrate Chemical compound [Cr+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O PHFQLYPOURZARY-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 2
- 239000000347 magnesium hydroxide Substances 0.000 description 2
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 2
- YIXJRHPUWRPCBB-UHFFFAOYSA-N magnesium nitrate Chemical compound [Mg+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O YIXJRHPUWRPCBB-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 2
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 description 2
- NGCDGPPKVSZGRR-UHFFFAOYSA-J 1,4,6,9-tetraoxa-5-stannaspiro[4.4]nonane-2,3,7,8-tetrone Chemical compound [Sn+4].[O-]C(=O)C([O-])=O.[O-]C(=O)C([O-])=O NGCDGPPKVSZGRR-UHFFFAOYSA-J 0.000 description 1
- PMJNEQWWZRSFCE-UHFFFAOYSA-N 3-ethoxy-3-oxo-2-(thiophen-2-ylmethyl)propanoic acid Chemical compound CCOC(=O)C(C(O)=O)CC1=CC=CS1 PMJNEQWWZRSFCE-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910021555 Chromium Chloride Inorganic materials 0.000 description 1
- 229940126062 Compound A Drugs 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000005955 Ferric phosphate Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004115 Sodium Silicate Substances 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229940053200 antiepileptics fatty acid derivative Drugs 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- XEPNJJFNSJKTSO-UHFFFAOYSA-N azanium;zinc;chloride Chemical compound [NH4+].[Cl-].[Zn] XEPNJJFNSJKTSO-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- QSWDMMVNRMROPK-UHFFFAOYSA-K chromium(3+) trichloride Chemical compound [Cl-].[Cl-].[Cl-].[Cr+3] QSWDMMVNRMROPK-UHFFFAOYSA-K 0.000 description 1
- WYYQVWLEPYFFLP-UHFFFAOYSA-K chromium(3+);triacetate Chemical compound [Cr+3].CC([O-])=O.CC([O-])=O.CC([O-])=O WYYQVWLEPYFFLP-UHFFFAOYSA-K 0.000 description 1
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229960004887 ferric hydroxide Drugs 0.000 description 1
- VEPSWGHMGZQCIN-UHFFFAOYSA-H ferric oxalate Chemical compound [Fe+3].[Fe+3].[O-]C(=O)C([O-])=O.[O-]C(=O)C([O-])=O.[O-]C(=O)C([O-])=O VEPSWGHMGZQCIN-UHFFFAOYSA-H 0.000 description 1
- 229940032958 ferric phosphate Drugs 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 150000004761 hexafluorosilicates Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- WBJZTOZJJYAKHQ-UHFFFAOYSA-K iron(3+) phosphate Chemical compound [Fe+3].[O-]P([O-])([O-])=O WBJZTOZJJYAKHQ-UHFFFAOYSA-K 0.000 description 1
- IEECXTSVVFWGSE-UHFFFAOYSA-M iron(3+);oxygen(2-);hydroxide Chemical compound [OH-].[O-2].[Fe+3] IEECXTSVVFWGSE-UHFFFAOYSA-M 0.000 description 1
- NPFOYSMITVOQOS-UHFFFAOYSA-K iron(III) citrate Chemical compound [Fe+3].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NPFOYSMITVOQOS-UHFFFAOYSA-K 0.000 description 1
- 229910000399 iron(III) phosphate Inorganic materials 0.000 description 1
- PJJZFXPJNUVBMR-UHFFFAOYSA-L magnesium benzoate Chemical compound [Mg+2].[O-]C(=O)C1=CC=CC=C1.[O-]C(=O)C1=CC=CC=C1 PJJZFXPJNUVBMR-UHFFFAOYSA-L 0.000 description 1
- 150000002681 magnesium compounds Chemical class 0.000 description 1
- OUHCLAKJJGMPSW-UHFFFAOYSA-L magnesium;hydrogen carbonate;hydroxide Chemical compound O.[Mg+2].[O-]C([O-])=O OUHCLAKJJGMPSW-UHFFFAOYSA-L 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 150000003606 tin compounds Chemical class 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- 238000000624 total reflection X-ray fluorescence spectroscopy Methods 0.000 description 1
- YJGJRYWNNHUESM-UHFFFAOYSA-J triacetyloxystannyl acetate Chemical compound [Sn+4].CC([O-])=O.CC([O-])=O.CC([O-])=O.CC([O-])=O YJGJRYWNNHUESM-UHFFFAOYSA-J 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000011592 zinc chloride Substances 0.000 description 1
- 235000005074 zinc chloride Nutrition 0.000 description 1
- 150000003752 zinc compounds Chemical class 0.000 description 1
- 229940098697 zinc laurate Drugs 0.000 description 1
- GPYYEEJOMCKTPR-UHFFFAOYSA-L zinc;dodecanoate Chemical compound [Zn+2].CCCCCCCCCCCC([O-])=O.CCCCCCCCCCCC([O-])=O GPYYEEJOMCKTPR-UHFFFAOYSA-L 0.000 description 1
- ZPEJZWGMHAKWNL-UHFFFAOYSA-L zinc;oxalate Chemical compound [Zn+2].[O-]C(=O)C([O-])=O ZPEJZWGMHAKWNL-UHFFFAOYSA-L 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
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- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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Abstract
【解決手段】 化合物半導体基板10は、p型の化合物半導体からなる基板12と、基板12の表面12aに結合しておりp型の不純物原子を含む物質14とを備える。
【選択図】 図1
Description
Znがドープされたp型のGaAsからなるウェハの一方の面(表面)を塩素系研磨剤で研磨した。これにより、ウェハの表面を鏡面に仕上げた。このウェハの表面を、アンモニア水及び過酸化水素を含むエッチング液でウェットエッチングした。ここで、Znはアンモニア水に溶解し難いので、ウェハの表面に残留し易い。これにより、表面にZnを含む物質が結合した実施例1の化合物半導体基板を得た。実施例1の化合物半導体基板の表面におけるZn濃度は、通常の化合物半導体基板の表面におけるZn濃度に比べて1桁上昇しており、5×1011atoms/cm2であった。なお、単位[atoms/cm2]は[個/cm2]と同じ単位を示す。Zn濃度は、全反射蛍光X線分析装置((株)テクノス製 TREX 610)を用いて測定された。
濃度5×1018atoms/cm3のSiがドープされたn型のGaAsからなるウェハの一方の面(表面)を研磨後、洗浄した。その後、ウェハをシリコン化合物ガス中に放置した。これにより、表面にシリコン化合物が付着した実施例2の化合物半導体基板が得られた。
Cが不純物として添加されており、抵抗値が1×107〜1×109Ω・cmのGaAsインゴットを準備した。このインゴットをワイヤーソーでスライスすることによってGaAsからなる半絶縁性のウェハを得た。このウェハの一方の面(表面)を、表面の凹凸が認識されなくなるまで研磨した。具体的には、10μm角で表面粗さRq(Rmsともいう。)が0.3μm未満になるまで研磨を行った。次に、ウェハの表面を酸又はアルカリで処理することによって、ウェハの表面に残存した研磨剤又は微粒子等を除去した。その後、30ppbの芳香族炭化水素化合物が添加された超純水を用いてウェハの表面を処理した。これにより、表面に芳香族炭化水素化合物が付着した実施例3の化合物半導体基板を得た。得られた化合物半導体基板の表面におけるC濃度は、1×1016atoms/cm2であった。C濃度は、ホリバ・ジョバンイボン製マーカス型高周波グロー放電発光表面分析装置(GD−OES JY−5000RF)を用いて測定された。また、C濃度は、X線光電子分光法(XPS)を用いると10%程度であった。XPSでは光電子取り出し角を90°に設定し、検出される全元素の強度比からC原子個数のパーセンテージを算出した。
Cが不純物として添加されたGaAsからなる半絶縁性のウェハを準備した。ウェハのC濃度は、1×1015atoms/cm3であった。このウェハの一方の面(表面)を研磨した後、有機洗浄、アルカリ洗浄及び酸洗浄を行った。洗浄後、ウェハの表面を水洗・乾燥した。その後、ウェハを高級脂肪酸の蒸気中に放置した。これにより、表面に高級脂肪酸が付着した実施例4の化合物半導体基板が得られた。得られた化合物半導体基板の表面におけるC濃度は、5×1015atoms/cm2であった。C濃度は、ホリバ・ジョバンイボン製マーカス型高周波グロー放電発光表面分析装置(GD−OES JY−5000RF)を用いて測定された。
Feが不純物として添加された高抵抗のInPインゴットから半絶縁性のウェハを切り出した後、ウェハの両面を研磨した。その後、ウェハの片面(表面)を、2μm角で表面粗さRqが0.2μm未満になるまで研磨を行った。次に、ウェハの表面の有機洗浄、酸洗浄及びアルカリ洗浄を行った。洗浄後、ウェハの水洗・スピン乾燥を行った。続いて、脂肪酸エステルの蒸気中にウェハを所定時間放置した。これにより、表面に脂肪酸エステルが付着した実施例5の化合物半導体基板が得られた。得られた化合物半導体基板の表面におけるC濃度は、5×1015atoms/cm2であった。C濃度は、ホリバ・ジョバンイボン製マーカス型高周波グロー放電発光表面分析装置(GD−OES JY−5000RF)を用いて測定された。
Oが不純物として添加されたn型のGaN基板を準備した。このGaN基板に鏡面研磨を施した後、GaN基板を酸又はアルカリで洗浄した。洗浄後、GaN基板を純水で清浄に洗浄した。次に、水酸化炭酸マグネシウム水溶液でGaN基板の表面を処理した後、超純水でリンスし、乾燥した。これにより、表面に水酸化炭酸マグネシウムが付着した実施例6の化合物半導体基板を得た。得られた化合物半導体基板の表面におけるMg濃度は1×1013atoms/cm2であった。Mg濃度は、Zn濃度と同様に測定された。
Claims (26)
- p型の化合物半導体からなる基板と、
前記基板の表面に結合しておりp型の不純物原子を含む物質と、
を備える、化合物半導体基板。 - 前記物質は、前記不純物原子として亜鉛を含む、請求項1に記載の化合物半導体基板。
- 前記物質は、前記不純物原子としてマグネシウムを含む、請求項1又は2に記載の化合物半導体基板。
- n型の化合物半導体からなる基板と、
前記基板の表面に結合しており、n型の不純物原子としてシリコンを含む物質と、
を備える、化合物半導体基板。 - n型の化合物半導体からなる基板と、
前記基板の表面に結合しており、n型の不純物原子としてスズを含む物質と、
を備える、化合物半導体基板。 - 半絶縁性の化合物半導体からなる基板と、
前記基板の表面に結合しており炭素原子を含む物質と、
を備える、化合物半導体基板。 - 前記物質は、炭化水素を含む、請求項6に記載の化合物半導体基板。
- 前記炭化水素は、芳香族炭化水素である、請求項7に記載の化合物半導体基板。
- 前記物質は、脂肪酸又は脂肪酸誘導体を含む、請求項6〜8のいずれか一項に記載の化合物半導体基板。
- 半絶縁性の化合物半導体からなる基板と、
前記基板の表面に結合しており鉄原子を含む物質と、
を備える、化合物半導体基板。 - 半絶縁性の化合物半導体からなる基板と、
前記基板の表面に結合しておりクロム原子を含む物質と、
を備える、化合物半導体基板。 - 第1導電型の化合物半導体からなる基板と、
前記基板の表面に結合しており、前記第1導電型とは異なる第2導電型の不純物原子を含む物質と、
を備える、化合物半導体基板。 - 前記表面における前記物質の濃度が5×1011個/cm2以上5×1015個/cm2以下である、請求項1〜12のいずれか一項に記載の化合物半導体基板。
- 前記基板がGaAs、InP、GaN、SiC又はAlNからなる、請求項1〜13のいずれか一項に記載の化合物半導体基板。
- 請求項1〜14のいずれか一項に記載の化合物半導体基板と、
前記化合物半導体基板における前記基板の前記表面上に設けられたIII−V族化合物半導体層と、
を備える、エピタキシャル基板。 - 支持基板上に設けられたp型の化合物半導体層と、
前記化合物半導体層の表面に結合しておりp型の不純物原子を含む物質と、
を備える、エピタキシャル基板。 - 前記物質は、前記不純物原子として亜鉛を含む、請求項16に記載のエピタキシャル基板。
- 前記物質は、前記不純物原子としてマグネシウムを含む、請求項16又は17に記載のエピタキシャル基板。
- 支持基板上に設けられたn型の化合物半導体層と、
前記化合物半導体層の表面に結合しており、n型の不純物原子としてシリコンを含む物質と、
を備える、エピタキシャル基板。 - 支持基板上に設けられたn型の化合物半導体層と、
前記化合物半導体層の表面に結合しており、n型の不純物原子としてスズを含む物質と、
を備える、エピタキシャル基板。 - 支持基板上に設けられた第1導電型の化合物半導体層と、
前記化合物半導体層の表面に結合しており、前記第1導電型とは異なる第2導電型の不純物原子を含む物質と、
を備える、エピタキシャル基板。 - 前記化合物半導体層は、III−V族化合物半導体からなる、請求項16〜21のいずれか一項に記載のエピタキシャル基板。
- 前記表面における前記物質の濃度が5×1011個/cm2以上5×1015個/cm2以下である、請求項16〜22のいずれか一項に記載のエピタキシャル基板。
- 化合物半導体からなる基板の表面を研磨した後に洗浄を施す工程と、
前記洗浄が施された基板の表面を、炭素原子を含む物質で処理する工程と、
を含む、化合物半導体基板の製造方法。 - 不純物原子を含む化合物半導体からなる基板の表面を、前記化合物半導体のエッチング速度が前記不純物原子のエッチング速度よりも大きくなるエッチング液を用いてウェットエッチングする、化合物半導体基板の製造方法。
- 支持基板上に設けられ不純物原子を含む化合物半導体からなる化合物半導体層の表面を、前記化合物半導体のエッチング速度が前記不純物原子のエッチング速度よりも大きくなるエッチング液を用いてウェットエッチングする、エピタキシャル基板の製造方法。
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US9299890B2 (en) | 2009-09-30 | 2016-03-29 | Sumitomo Electric Industries, Ltd. | III nitride semiconductor substrate, epitaxial substrate, and semiconductor device |
JP2013249249A (ja) * | 2013-05-20 | 2013-12-12 | Sumitomo Electric Ind Ltd | Iii族窒化物基板、及びそれを用いた半導体デバイス |
JP2014064002A (ja) * | 2013-09-11 | 2014-04-10 | Sumitomo Electric Ind Ltd | GaN基板及びその製造方法、エピタキシャル基板、並びに、半導体デバイス |
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SG128576A1 (en) | 2007-01-30 |
TWI413161B (zh) | 2013-10-21 |
EP1732110A3 (en) | 2011-01-12 |
CN1877854A (zh) | 2006-12-13 |
US20060281328A1 (en) | 2006-12-14 |
EP1732110A2 (en) | 2006-12-13 |
TWI618118B (zh) | 2018-03-11 |
TWI622085B (zh) | 2018-04-21 |
JP4872246B2 (ja) | 2012-02-08 |
KR20060128679A (ko) | 2006-12-14 |
TW201740436A (zh) | 2017-11-16 |
TW201403671A (zh) | 2014-01-16 |
TW200707544A (en) | 2007-02-16 |
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