JP2006339629A - 半導体素子 - Google Patents

半導体素子 Download PDF

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Publication number
JP2006339629A
JP2006339629A JP2006124959A JP2006124959A JP2006339629A JP 2006339629 A JP2006339629 A JP 2006339629A JP 2006124959 A JP2006124959 A JP 2006124959A JP 2006124959 A JP2006124959 A JP 2006124959A JP 2006339629 A JP2006339629 A JP 2006339629A
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JP
Japan
Prior art keywords
substrate
layer
type
semiconductor
light emitting
Prior art date
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Pending
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JP2006124959A
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English (en)
Japanese (ja)
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JP2006339629A5 (https=
Inventor
Takao Misaki
貴生 三崎
Yukio Narukawa
幸男 成川
Masatsugu Ichikawa
将嗣 市川
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Nichia Chemical Industries Ltd
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Nichia Chemical Industries Ltd
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Application filed by Nichia Chemical Industries Ltd filed Critical Nichia Chemical Industries Ltd
Priority to JP2006124959A priority Critical patent/JP2006339629A/ja
Publication of JP2006339629A publication Critical patent/JP2006339629A/ja
Publication of JP2006339629A5 publication Critical patent/JP2006339629A5/ja
Pending legal-status Critical Current

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JP2006124959A 2005-05-02 2006-04-28 半導体素子 Pending JP2006339629A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006124959A JP2006339629A (ja) 2005-05-02 2006-04-28 半導体素子

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005134689 2005-05-02
JP2006124959A JP2006339629A (ja) 2005-05-02 2006-04-28 半導体素子

Publications (2)

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JP2006339629A true JP2006339629A (ja) 2006-12-14
JP2006339629A5 JP2006339629A5 (https=) 2009-06-18

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ID=37559869

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JP2006124959A Pending JP2006339629A (ja) 2005-05-02 2006-04-28 半導体素子

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JP (1) JP2006339629A (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140053306A (ko) * 2011-08-31 2014-05-07 마이크론 테크놀로지, 인크 통합된 정전기 방전 보호를 가진 디바이스들을 포함한 고체 상태 트랜듀서 디바이스들, 및 연관된 시스템들과 방법들
US9490239B2 (en) 2011-08-31 2016-11-08 Micron Technology, Inc. Solid state transducers with state detection, and associated systems and methods
JP2021197533A (ja) * 2020-06-18 2021-12-27 豊田合成株式会社 発光素子

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04207079A (ja) * 1990-11-30 1992-07-29 Hitachi Ltd 受発光複合素子
JPH0927651A (ja) * 1995-07-12 1997-01-28 Oki Electric Ind Co Ltd 半導体レーザ
JPH10200159A (ja) * 1997-01-10 1998-07-31 Rohm Co Ltd 半導体発光素子
JP2000004047A (ja) * 1998-06-16 2000-01-07 Toshiba Corp 半導体発光装置及びその製造方法
JP2001223390A (ja) * 2000-02-10 2001-08-17 Sharp Corp 半導体発光装置およびその製造方法
WO2005029587A1 (ja) * 2003-09-24 2005-03-31 Sanken Electric Co., Ltd. 窒化物系半導体素子

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04207079A (ja) * 1990-11-30 1992-07-29 Hitachi Ltd 受発光複合素子
JPH0927651A (ja) * 1995-07-12 1997-01-28 Oki Electric Ind Co Ltd 半導体レーザ
JPH10200159A (ja) * 1997-01-10 1998-07-31 Rohm Co Ltd 半導体発光素子
JP2000004047A (ja) * 1998-06-16 2000-01-07 Toshiba Corp 半導体発光装置及びその製造方法
JP2001223390A (ja) * 2000-02-10 2001-08-17 Sharp Corp 半導体発光装置およびその製造方法
WO2005029587A1 (ja) * 2003-09-24 2005-03-31 Sanken Electric Co., Ltd. 窒化物系半導体素子

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10615221B2 (en) 2011-08-31 2020-04-07 Micron Technology, Inc. Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods
US10937776B2 (en) 2011-08-31 2021-03-02 Micron Technology, Inc. Solid state transducers with state detection, and associated systems and methods
US9373661B2 (en) 2011-08-31 2016-06-21 Micron Technology, Inc. Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods
US9490239B2 (en) 2011-08-31 2016-11-08 Micron Technology, Inc. Solid state transducers with state detection, and associated systems and methods
KR101675652B1 (ko) 2011-08-31 2016-11-11 마이크론 테크놀로지, 인크 통합된 정전기 방전 보호를 가진 디바이스들을 포함한 고체 상태 트랜듀서 디바이스들, 및 연관된 시스템들과 방법들
US9978807B2 (en) 2011-08-31 2018-05-22 Micron Technology, Inc. Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods
JP2014525686A (ja) * 2011-08-31 2014-09-29 マイクロン テクノロジー， インク． 一体化された静電気放電保護を有するデバイスを含むソリッドステート変換デバイス、ならびに関連するシステムおよび方法
US10347614B2 (en) 2011-08-31 2019-07-09 Micron Technology, Inc. Solid state transducers with state detection, and associated systems and methods
KR20140053306A (ko) * 2011-08-31 2014-05-07 마이크론 테크놀로지, 인크 통합된 정전기 방전 보호를 가진 디바이스들을 포함한 고체 상태 트랜듀서 디바이스들, 및 연관된 시스템들과 방법들
US10361245B2 (en) 2011-08-31 2019-07-23 Micron Technology, Inc. Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods
US11195876B2 (en) 2011-08-31 2021-12-07 Micron Technology, Inc. Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods
US12230616B2 (en) 2011-08-31 2025-02-18 Micron Technology, Inc. Solid state transducers with state detection, and associated systems and methods
US11688758B2 (en) 2011-08-31 2023-06-27 Micron Technology, Inc. Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods
US12113092B2 (en) 2011-08-31 2024-10-08 Micron Technology, Inc. Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods
JP7463201B2 (ja) 2020-06-18 2024-04-08 豊田合成株式会社 発光素子
JP2021197533A (ja) * 2020-06-18 2021-12-27 豊田合成株式会社 発光素子

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