JP2006339629A5 - - Google Patents

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Publication number
JP2006339629A5
JP2006339629A5 JP2006124959A JP2006124959A JP2006339629A5 JP 2006339629 A5 JP2006339629 A5 JP 2006339629A5 JP 2006124959 A JP2006124959 A JP 2006124959A JP 2006124959 A JP2006124959 A JP 2006124959A JP 2006339629 A5 JP2006339629 A5 JP 2006339629A5
Authority
JP
Japan
Prior art keywords
semiconductor
electrode
light emitting
substrate
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006124959A
Other languages
English (en)
Japanese (ja)
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JP2006339629A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2006124959A priority Critical patent/JP2006339629A/ja
Priority claimed from JP2006124959A external-priority patent/JP2006339629A/ja
Publication of JP2006339629A publication Critical patent/JP2006339629A/ja
Publication of JP2006339629A5 publication Critical patent/JP2006339629A5/ja
Pending legal-status Critical Current

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JP2006124959A 2005-05-02 2006-04-28 半導体素子 Pending JP2006339629A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006124959A JP2006339629A (ja) 2005-05-02 2006-04-28 半導体素子

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005134689 2005-05-02
JP2006124959A JP2006339629A (ja) 2005-05-02 2006-04-28 半導体素子

Publications (2)

Publication Number Publication Date
JP2006339629A JP2006339629A (ja) 2006-12-14
JP2006339629A5 true JP2006339629A5 (https=) 2009-06-18

Family

ID=37559869

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006124959A Pending JP2006339629A (ja) 2005-05-02 2006-04-28 半導体素子

Country Status (1)

Country Link
JP (1) JP2006339629A (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8809897B2 (en) * 2011-08-31 2014-08-19 Micron Technology, Inc. Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods
US9490239B2 (en) 2011-08-31 2016-11-08 Micron Technology, Inc. Solid state transducers with state detection, and associated systems and methods
JP7463201B2 (ja) * 2020-06-18 2024-04-08 豊田合成株式会社 発光素子

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2879971B2 (ja) * 1990-11-30 1999-04-05 株式会社日立製作所 受発光複合素子
JPH0927651A (ja) * 1995-07-12 1997-01-28 Oki Electric Ind Co Ltd 半導体レーザ
JP3787202B2 (ja) * 1997-01-10 2006-06-21 ローム株式会社 半導体発光素子
JP2000004047A (ja) * 1998-06-16 2000-01-07 Toshiba Corp 半導体発光装置及びその製造方法
JP2001223390A (ja) * 2000-02-10 2001-08-17 Sharp Corp 半導体発光装置およびその製造方法
TWI243399B (en) * 2003-09-24 2005-11-11 Sanken Electric Co Ltd Nitride semiconductor device

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