JP2006339629A5 - - Google Patents

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Publication number
JP2006339629A5
JP2006339629A5 JP2006124959A JP2006124959A JP2006339629A5 JP 2006339629 A5 JP2006339629 A5 JP 2006339629A5 JP 2006124959 A JP2006124959 A JP 2006124959A JP 2006124959 A JP2006124959 A JP 2006124959A JP 2006339629 A5 JP2006339629 A5 JP 2006339629A5
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JP
Japan
Prior art keywords
semiconductor
electrode
light emitting
substrate
light
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Pending
Application number
JP2006124959A
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Japanese (ja)
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JP2006339629A (en
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Priority to JP2006124959A priority Critical patent/JP2006339629A/en
Priority claimed from JP2006124959A external-priority patent/JP2006339629A/en
Publication of JP2006339629A publication Critical patent/JP2006339629A/en
Publication of JP2006339629A5 publication Critical patent/JP2006339629A5/ja
Pending legal-status Critical Current

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Claims (8)

Si基板を有するSi半導体の保護素子部と、該基板上に、窒化物半導体層が積層された発光素子構造部と、を有し、前記保護素子部又は前記発光素子構造部内で、トンネル接合が形成されている半導体素子。 A protective element portion of a Si semiconductor having a Si substrate; and a light emitting element structure portion in which a nitride semiconductor layer is stacked on the substrate, and a tunnel junction is formed in the protective element portion or the light emitting element structure portion. A formed semiconductor element. Si基板を有するSi半導体の保護素子部と、該基板上に、窒化物半導体層が積層された発光素子構造部と、を有し、前記保護素子部が、前記発光素子部の窒化物半導体層と、Si半導体とにそれぞれ一対の電極が設けられた保護素子である半導体素子。 A Si semiconductor protective element portion having a Si substrate; and a light emitting element structure portion in which a nitride semiconductor layer is laminated on the substrate, wherein the protective element portion is a nitride semiconductor layer of the light emitting element portion. And a semiconductor element which is a protective element in which a pair of electrodes is provided on each of the Si semiconductors. 前記保護素子部と発光素子構造部が１つの共通電極を有する請求項１又は２記載の半導体素子。 The semiconductor device according to claim 1 or 2, wherein the light emitting device structure portion and the protective element portion has a one common electrode. 前記保護素子部のカソード電極とアノード電極との間に、トンネル接合が形成され、該アノード電極が、発光素子部のカソード電極と共通電極である請求項３記載の半導体素子。 4. The semiconductor element according to claim 3 , wherein a tunnel junction is formed between the cathode electrode and the anode electrode of the protection element part, and the anode electrode is a cathode electrode and a common electrode of the light emitting element part. 前記発光素子部のカソード電極が、前記保護素子部のｐ型Si層に設けられ、該発光素子部のカソード電極とアノード電極との間に、トンネル接合が形成される請求項１乃至４記載の半導体素子。 The cathode electrode of the light emitting element portion is provided on the p-type Si layer of the protective element, between the cathode electrode and the anode electrode of the light emitting element section, of claims 1 to 4, wherein a tunnel junction is formed Semiconductor element. 前記半導体素子が、二端子素子であり、該二端子が、前記発光構造部のｎ電極と、発光構造部が設けられた基板主面に対向する主面に設けられた保護素子部のｎ電極である請求項１乃至５記載の半導体素子。The semiconductor element is a two-terminal element, and the two terminals are an n-electrode of the light-emitting structure part and an n-electrode of a protective element part provided on a main surface facing the substrate main surface on which the light-emitting structure part is provided. The semiconductor device according to claim 1, wherein: 前記半導体素子が、三端子素子であり、該三端子が、前記発光構造部のｐ，ｎ電極と、前記基板の前記発光素子構造部が設けられた主面に対向する主面に設けられた保護素子部のｎ電極である請求項１乃至５記載の半導体素子。 The semiconductor element is a three-terminal element, and the three terminals are provided on a main surface of the light-emitting structure portion facing a main surface of the substrate on which the light-emitting element structure portion is provided. the semiconductor device of claims 1 to 5, wherein the n electrode of the protection element portion. 前記半導体素子が、前記基板の前記発光素子構造部が設けられた主面に設けられたｎ電極と発光構造部のｐ電極とが接続されるように半導体素子に配線が設けられた内部回路を有する請求項１乃至７記載の半導体素子。 An internal circuit in which a wiring is provided in the semiconductor element so that the n electrode provided on the main surface of the substrate on which the light emitting element structure is provided and the p electrode of the light emitting structure are connected to the semiconductor element. the semiconductor device of claims 1 to 7, wherein a.
JP2006124959A 2005-05-02 2006-04-28 Semiconductor device Pending JP2006339629A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006124959A JP2006339629A (en) 2005-05-02 2006-04-28 Semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005134689 2005-05-02
JP2006124959A JP2006339629A (en) 2005-05-02 2006-04-28 Semiconductor device

Publications (2)

Publication Number Publication Date
JP2006339629A JP2006339629A (en) 2006-12-14
JP2006339629A5 true JP2006339629A5 (en) 2009-06-18

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Family Applications (1)

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JP2006124959A Pending JP2006339629A (en) 2005-05-02 2006-04-28 Semiconductor device

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JP (1) JP2006339629A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9490239B2 (en) 2011-08-31 2016-11-08 Micron Technology, Inc. Solid state transducers with state detection, and associated systems and methods
US8809897B2 (en) 2011-08-31 2014-08-19 Micron Technology, Inc. Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods
JP7463201B2 (en) 2020-06-18 2024-04-08 豊田合成株式会社 Light emitting element

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2879971B2 (en) * 1990-11-30 1999-04-05 株式会社日立製作所 Light emitting and receiving composite element
JPH0927651A (en) * 1995-07-12 1997-01-28 Oki Electric Ind Co Ltd Semiconductor laser
JP3787202B2 (en) * 1997-01-10 2006-06-21 ローム株式会社 Semiconductor light emitting device
JP2000004047A (en) * 1998-06-16 2000-01-07 Toshiba Corp Semiconductor light emitting device and fabrication thereof
JP2001223390A (en) * 2000-02-10 2001-08-17 Sharp Corp Semiconductor light-emitting device and manufacturing method therefor
TWI243399B (en) * 2003-09-24 2005-11-11 Sanken Electric Co Ltd Nitride semiconductor device

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