JP2001223390A - Semiconductor light-emitting device and manufacturing method therefor - Google Patents

Semiconductor light-emitting device and manufacturing method therefor

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Publication number
JP2001223390A
JP2001223390A JP2000034168A JP2000034168A JP2001223390A JP 2001223390 A JP2001223390 A JP 2001223390A JP 2000034168 A JP2000034168 A JP 2000034168A JP 2000034168 A JP2000034168 A JP 2000034168A JP 2001223390 A JP2001223390 A JP 2001223390A
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JP
Japan
Prior art keywords
light emitting
diode element
emitting diode
element
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000034168A
Other languages
Japanese (ja)
Inventor
Osamu Kitagawa
治 北川
Original Assignee
Sharp Corp
シャープ株式会社
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Publication date
Application filed by Sharp Corp, シャープ株式会社 filed Critical Sharp Corp
Priority to JP2000034168A priority Critical patent/JP2001223390A/en
Publication of JP2001223390A publication Critical patent/JP2001223390A/en
Withdrawn legal-status Critical Current

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32135Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49107Connecting at different heights on the semiconductor or solid-state body
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Abstract

(57) [Problem] To reduce the size of a semiconductor light emitting device provided with a protection diode for preventing destruction of a light emitting diode due to a reverse voltage, static electricity or the like, and to improve light extraction efficiency. SOLUTION: A light emitting diode 1 is fixed on a protective diode 2 with an adhesive 4 or the like, and both are fixed in the same frame 8.
Mount on top. The light emitting diode 1 is fixed on the protective diode 2 with the light emitting surface side up.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device using a light emitting diode element and a method for manufacturing the same.
More specifically, the present invention relates to a semiconductor light emitting device provided with a protection element so that a light emitting diode element is not destroyed by a reverse voltage caused by AC voltage driving or a surge voltage caused by static electricity or the like, and a method of manufacturing the same.

[0002]

2. Description of the Related Art Conventionally, as a semiconductor light emitting device, a pn junction in which a p-type semiconductor layer and an n-type semiconductor layer are directly joined, or a double hetero junction with an active layer interposed therebetween is formed. Things are known. In this semiconductor light emitting device, a pn junction or an active layer emits light by applying a forward voltage between the p-type semiconductor layer and the n-type semiconductor layer.

Since such a semiconductor light emitting device has a diode structure, it has a rectifying effect that no current flows even if a reverse voltage is applied between the p-type semiconductor layer and the n-type semiconductor layer. are doing. A driving method of applying an AC voltage instead of a DC voltage between the p-type semiconductor layer and the n-type semiconductor layer using the rectification is also known. In this case, current flows only when a forward voltage of the AC voltage is applied, and light emission occurs.

Further, in order to prevent the light emitting diode element from being destroyed by a reverse voltage caused by AC voltage driving or a surge voltage caused by static electricity or the like, the polarity of the light emitting diode element is opposite to the polarity of the light emitting diode element such as a zener diode element or a Si diode element. A semiconductor light-emitting device incorporating a protection diode element is also known. In particular, since a light-emitting diode element using a GaN-based compound semiconductor is weak against a surge voltage, it is preferable to adopt a configuration of a semiconductor light-emitting device incorporating such a protection diode element.

Such a semiconductor light emitting device is disclosed in, for example, Japanese Patent Application Laid-Open No. H11-54804, in which a light emitting diode element and a protective diode element are not mounted on the same frame (electrode terminal), as shown in FIG. As described above, the light emitting diode element 1 mounted on the first frame 8 and the protection diode element 2 mounted on the second frame 7 are disclosed.

Further, Japanese Patent Application Laid-Open No. 11-40848 discloses a device in which a light emitting diode element and a protection diode element are mounted on the same frame. This semiconductor light emitting device has a first frame 8 as shown in FIG.
The light-emitting diode element 1 is mounted on the protection diode element 2 mounted thereon with the light-emitting surface side down via the bump electrode 10 made of Au.

In FIGS. 8 and 9, reference numeral 3 denotes a wire, 5 denotes a sealing resin made of an epoxy resin or the like, 6 denotes a reflection case, and 9 denotes an insulating substrate.

[0008]

However, the semiconductor light emitting device disclosed in Japanese Patent Application Laid-Open No. H11-54804,
The light emitting diode element 1 is mounted on the first frame and the protective diode element 2 is mounted on the second frame 7 without mounting the light emitting diode element and the protective diode element on the same frame. Therefore, large electrode patterns are required for the first frame 8 and the second frame 7. Therefore, a frame for one chip (light emitting diode element) conventionally used cannot be used, and a dedicated frame has to be manufactured.

On the other hand, Japanese Unexamined Patent Publication No.
In the semiconductor light emitting device disclosed in Japanese Patent No. 848, the light emitting diode element 1 is mounted on the protective diode element 2 and both are mounted on the same frame 8, so that a conventionally used one-chip frame is used. Can be used. However, in this semiconductor light emitting device, since the light emitting diode element 1 is mounted on the protective diode element 2 with the light emitting surface side down, there is a problem that light extraction efficiency is deteriorated.

SUMMARY OF THE INVENTION The present invention has been made to solve such problems of the prior art, and is intended to prevent a light emitting diode element from being damaged by a reverse voltage caused by AC voltage driving or a surge voltage caused by static electricity or the like. In a semiconductor light-emitting device incorporating a protection element, a light-emitting diode element and a protection element can be mounted on the same frame, and the light extraction efficiency can be improved, and a method of manufacturing the same. The purpose is to provide.

[0011]

A semiconductor light emitting device according to the present invention comprises a light emitting diode element having a semiconductor laminated structure including at least a first conductive type semiconductor layer and a second conductive type semiconductor layer, and the light emitting diode element is inverted. A protection element for preventing breakdown due to a directional voltage or a surge voltage, wherein a surface of the light emitting diode element opposite to a light emitting surface is disposed on the protection element side on the protection element. The above-described object is achieved.

The protection element has a diode structure having a first conductivity type semiconductor region and a second conductivity type semiconductor region;
The light emitting diode element may be connected in parallel with the opposite polarity.

[0013] The light emitting diode element may be made of a GaN-based compound semiconductor.

The method for manufacturing a semiconductor light-emitting device according to the present invention is a method for manufacturing a semiconductor light-emitting device according to the present invention, wherein the light-emitting diode element is fixed on the protective element with an adhesive. Objective is achieved.

The light emitting diode element can be fixed on the protection element by using a polyimide resin or an epoxy resin as the adhesive.

A method for manufacturing a semiconductor light emitting device according to the present invention is a method for manufacturing a semiconductor light emitting device according to the present invention, wherein the light emitting diode element is fixed on the protection element by a bump electrode. Objective is achieved.

The method for manufacturing a semiconductor light emitting device according to the present invention is a method for manufacturing a semiconductor light emitting device according to the present invention, wherein the light emitting diode element is fixed on the protection element by a conductive paste. The above object is achieved.

The operation of the present invention will be described below.

According to the present invention, the protection element
It is possible to prevent the light emitting diode element from being destroyed by a reverse voltage due to AC voltage driving or a surge voltage due to static electricity or the like.

For example, by providing a protection diode element which is connected in parallel with the light emitting diode element in the opposite direction to the light emitting diode element, a current flows through the protection diode element when a reverse voltage flows by AC voltage driving. Therefore, the light emitting diode element is not destroyed by the reverse voltage. When a Zener diode element is used as the protection diode element, when a reverse voltage pulse is applied to the Zener diode element, the applied current pulse is largely cut. Therefore, only a weak current pulse is applied to the light emitting diode element, and it is protected.

Further, in order to fix the light emitting diode element on the protection element, the protection element and the light emitting diode element can be mounted using a conventionally used one-chip frame.

Since the surface of the light emitting diode element opposite to the light emitting surface side is arranged and fixed to the protection element side, light from the side surface of the light emitting diode element is hardly absorbed by the protection element. It is possible to increase the light extraction efficiency. Further, since the light emitting diode element can be arranged at the center of the product with a small electrode area, it is possible to increase the light extraction efficiency.

In particular, for a light-emitting diode element made of a GaN-based compound semiconductor that is vulnerable to surge, a structure provided with such a protection element is effective.

The light emitting diode element can be fixed on the protective element by disposing the side opposite to the light emitting surface side to the protective diode element side with an adhesive such as polyimide resin or epoxy resin. In this case, although the adhesion to the LED chip sealing resin is slightly inferior, the working efficiency is improved by shortening the bonding time.

Alternatively, the light emitting diode element is disposed on the protection element by an adhesive such as a polyimide resin or an epoxy resin by an Au bump electrode or an Ag paste, and the side opposite to the light emitting surface is disposed on the protection diode element side. It can also be fixed. In the case of the Ag paste, an area larger than the chip size is required as the die bonding area if importance is attached to the adhesive strength. However, the Au bump electrode only needs to have an adhesive area of the electrode size.

[0026]

Embodiments of the present invention will be described below with reference to the drawings.

(Embodiment 1) FIG. 1 is a sectional view schematically showing a configuration of a semiconductor light emitting device according to an embodiment of the present invention, and FIG. 2A is a partially enlarged view of FIG. FIG. 4B is an equivalent circuit diagram showing a connection state of the light emitting diode element and the protection diode element.

This semiconductor light emitting device is of a surface mounting type. As shown in FIG. 1, a first frame (electrode terminal) 8 and a second frame 7 are provided at both ends of an insulating substrate 10. One frame 8 extends to near the center of the insulating substrate 10. The protection diode element 2 is fixed to the distal end side of the first frame 8, and the light emitting diode element 1 is fixed thereon by the adhesive layer 4. The periphery is covered with a sealing resin 5, and a reflection case 6 is provided on the outer periphery.

As shown in FIG. 2A, the protection diode element 2 is placed on an n-type substrate 11 made of Si (the surface thereof).
A p-type region 12 is provided, and the n-type substrate 11 side is arranged and fixed to the first frame 8 side. The p-side electrode 18 of the protection diode element 2 is connected to the second frame 7 by the wire 3.

As shown in FIG. 2A, the light emitting diode element 1 has an n-type semiconductor layer 14 and a p-type
Semiconductor layers 15 are stacked in this order, and the p-type semiconductor layer 15
Emit light from the side. This light emitting diode element 1
The third side is disposed on the side of the protection diode element 2 and is fixed by the adhesive layer 4. Then, the p-side electrode 16 of the light emitting diode element 1 is connected to the first frame 8 by the wire 3, and the n-side electrode 17 is connected to the second frame 7 by the wire 3.
It is connected to the.

Thus, as shown in FIG. 2B, the protection diode element 2 is connected in parallel with the light emitting diode element 1 with the opposite polarity.

This semiconductor light emitting device can be manufactured, for example, as follows.

First, as shown in FIG. 3A, the protection diode element 2 is fixed to the first frame 8 with an Ag paste or a metal electrode (melted bump electrode) 20.

Next, as shown in FIG. 3B, the light emitting diode element 1 is fixed on the protective diode element 2 with the light emitting surface side up by an adhesive layer 4 such as epoxy resin or polyimide resin. .

Next, as shown in FIG.
An n-side electrode of the light emitting diode element 1 is connected to an electrode of the second frame 7 by an Au wire 3 of about 30 μφ;
As shown in FIG. 3D, the p-side electrode of the protection diode element 2 is connected to the electrode of the second frame 7 by the Au wire 3 of 23 μφ to 30 μφ. And FIG.
As shown in (e), the p-side electrode of the light emitting diode element 1 is firstly connected to the Au wire 3 of 23 μφ to 30 μφ.
To the electrodes of the frame 8.

Thereafter, as shown in FIG. 3 (f), in order to protect the wire 3, the light emitting diode element 1 and the protective diode element 2, 100 ° C. to 150 ° C. using a transparent epoxy resin having a Tg of 100 ° C. to 150 ° C. 1 hour to 1
By curing for 6 hours, the light emitting portion is sealed with the resin 5.

In the semiconductor light emitting device thus obtained, the protection diode element 2 can prevent the light emitting diode element 1 from being destroyed by a reverse voltage caused by AC voltage driving or a surge voltage caused by static electricity or the like.

Since the light-emitting diode element 1 is fixed on the protection diode element 2, the protection diode element 2 and the light-emitting diode element 1 are mounted using a conventionally used one-chip frame. can do.

Furthermore, since the surface of the light emitting diode element 1 opposite to the light emitting surface is arranged and fixed to the protection diode element 2, the light extraction efficiency can be increased. Furthermore, since the light emitting diode element 1 can be arranged at the center of the product with a small electrode area, the light extraction efficiency can be increased.

Since the light emitting diode element 1 is fixed on the protective diode element 2 with an adhesive such as a polyimide resin or an epoxy resin, the work efficiency can be improved by shortening the bonding time.

(Embodiment 2) FIG. 4 is a sectional view schematically showing a configuration of a semiconductor light emitting device according to another embodiment of the present invention, and FIG. 5 (a) is a partially enlarged view of FIG. (B)
FIG. 4 is an equivalent circuit diagram showing a connection state of a light emitting diode element and a protection diode element.

This semiconductor light emitting device is of the surface mounting type as in the first embodiment.

As shown in FIGS. 4 and 5 (a), the protection diode element 2 has a p-type region 12 provided on an n-type substrate 11 made of Si, and the n-type substrate 11 side is connected to a first frame. It is arranged and fixed on the 8 side. The p-side electrode 18 of the protection diode element 2 is connected to the second frame 7 by the wire 3.

The light emitting diode element 1 is shown in FIGS.
As shown in (a), a bump electrode 10 made of Au is provided on the n-type semiconductor layer 14 side, which is composed of an n-type semiconductor layer 14 and a p-type semiconductor layer 15. The light emitting diode element 1 has the n-type semiconductor layer 14 side opposite to the light emitting surface disposed on the protection diode element 2 side and is fixed by the bump electrode 10. Then, the p-side electrode 16 of the light emitting diode element 1 is connected to the first frame 8 by the wire 3.

Thus, as shown in FIG. 5B, the protection diode element 2 is connected in parallel with the light emitting diode element 1 with the opposite polarity.

In this embodiment, since the light emitting diode element 1 is fixed on the protection diode element 2 by the bump electrode 10, it can be fixed in an area smaller than the element area of the light emitting diode element. Even if the element area is not sufficiently large, a certain degree of adhesive strength can be obtained. However, setting of conditions is important because there is a risk of chip breakage due to heating or pressurization.

(Embodiment 3) FIG. 6 is a cross-sectional view schematically showing a configuration of a semiconductor light emitting device according to another embodiment of the present invention, and FIG. 7 (a) is a partially enlarged view of FIG. (B)
FIG. 4 is an equivalent circuit diagram showing a connection state of a light emitting diode element and a protection diode element.

This semiconductor light emitting device is of a cannonball type, and the protection diode element 2 is provided with a p-type region 12 on an n-type substrate 11 made of Si, as shown in FIGS. The n-type substrate 11 side is fixed to the first frame 8 side. And p of protection diode element 2
The side electrode 18 is connected to the second frame 7 by the wire 3.

The light emitting diode element 1 is shown in FIGS.
As shown in (a), an n-type semiconductor layer 1 is formed on an i-type substrate 13.
4 and the p-type semiconductor layer 15 are stacked in this order, and light is emitted from the p-type semiconductor layer 15 side. This light emitting diode element 1
Is fixed by the adhesive layer 4 with the substrate 13 side disposed on the protection diode element 2 side. The p-side electrode 16 of the light-emitting diode element 1 is connected to the first frame 8 by the wire 3, and the n-side electrode 17 is connected to the second frame 7 by the wire 3.

As a result, as shown in FIG. 7B, the protection diode element 2 is connected in parallel with the light emitting diode element 1 with the opposite polarity.

Also in this semiconductor light emitting device, the protection diode element 2 can prevent the light emitting diode element 1 from being destroyed by a reverse voltage caused by AC voltage driving or a surge voltage caused by static electricity or the like.

In the first to third embodiments,
Although the light emitting diode element is fixed on the protective diode element with an adhesive or a bump electrode, the light emitting diode element may be fixed with a conductive paste such as an Ag paste. In this case, there is an advantage that connection is easy. However, if the die bond area (the size of the protection chip) is small, sufficient die bond strength may not be obtained, but it is considered that such a high die bond strength is unnecessary. In the case of a blue light emitting diode device using a GaN-based material, the Ag paste may be deteriorated by the UV wavelength.

The protective element may be a light emitting element such as a Zener diode, a normal diode, a diode-connected transistor, a MOSFET having a gate connected to a source or a gate and a drain, or a composite element or an IC combining these. Any element that can prevent the destruction of the diode can be used.

The light emitting diode element comprises a p-type semiconductor layer and an n-type semiconductor layer.
The present invention is not limited to the one in which a pn junction in which a mold semiconductor layer is directly joined is formed, and a double hetero junction in which an active layer is interposed therebetween may be used. In addition, the material is not limited to the GaN-based compound semiconductor layer, and may use another material.

Further, the conductivity type of each part constituting the light emitting diode element and the protection diode element is p-type and n-type.
The type may be reversed.

[0056]

As described in detail above, according to the present invention,
The protection element can prevent the light emitting diode element from being destroyed by a reverse voltage caused by AC voltage driving or a surge voltage caused by static electricity or the like. Therefore, a semiconductor light emitting device with significantly improved reliability can be obtained.

Further, in order to fix the light emitting diode element on the protection element, the protection element and the light emitting diode element can be mounted by using a conventionally used one-chip frame. Therefore, the size of the semiconductor light emitting device can be reduced.

Since the surface of the light emitting diode element opposite to the light emitting surface side is arranged and fixed to the protection element side, the light extraction efficiency can be increased.

Further, since the light emitting diode element can be arranged at the center of the product in a small electrode area, it is possible to reduce the size of the semiconductor light emitting device and increase the light extraction efficiency.

In particular, the present invention is very effective for a semiconductor light emitting device using a light emitting diode element made of a GaN compound semiconductor which is vulnerable to surge.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view schematically illustrating a configuration of a semiconductor light emitting device according to a first embodiment.

2A is a partially enlarged view of FIG. 1, and FIG. 2B is an equivalent circuit diagram illustrating a connection state of a light emitting diode element and a protection diode element in the semiconductor light emitting device of the first embodiment.

FIGS. 3A to 3F are cross-sectional views illustrating the steps of manufacturing the semiconductor light emitting device of the first embodiment.

FIG. 4 is a cross-sectional view schematically illustrating a configuration of a semiconductor light emitting device according to a second embodiment.

5A is a partially enlarged view of FIG. 4, and FIG. 5B is an equivalent circuit diagram showing a connection state of a light emitting diode element and a protection diode element in the semiconductor light emitting device according to the second embodiment.

FIG. 6 is a cross-sectional view schematically illustrating a configuration of a semiconductor light emitting device according to a third embodiment.

7A is a partially enlarged view of FIG. 6, and FIG. 7B is an equivalent circuit diagram showing a connection state of a light emitting diode element and a protection diode element in the semiconductor light emitting device of the third embodiment.

FIG. 8 is a cross-sectional view schematically showing a configuration of a conventional semiconductor light emitting device.

FIG. 9 is a cross-sectional view schematically illustrating a configuration of another conventional semiconductor light emitting device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Light emitting diode element 2 Protective diode element 3 Wire 4 Adhesive layer 5 Sealing resin 6 Reflection case 7 Second frame 8 First frame 9 Insulating substrate 10 Bump electrode 11 N-type substrate 12 P-type region 13 i-type Substrate 14 n-type semiconductor layer 15 p-type semiconductor layer 16, 18 p-side electrode 17 n-side electrode 20 Ag paste or metal electrode

Claims (7)

[Claims]
1. A light emitting diode device having a semiconductor laminated structure including at least a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, and preventing the light emitting diode device from being destroyed by a reverse voltage or a surge voltage. A semiconductor light-emitting device, comprising: a protective element for fixing the light-emitting diode element on the protective element with a surface opposite to the light-emitting surface side disposed on the protective element side.
2. The device according to claim 1, wherein the protection element has a diode structure having a first conductivity type semiconductor region and a second conductivity type semiconductor region, and is connected in parallel with the light emitting diode element with a reverse polarity. Semiconductor light emitting device.
3. The semiconductor light emitting device according to claim 1, wherein the light emitting diode element is made of a GaN-based compound semiconductor.
4. The method for manufacturing a semiconductor light emitting device according to claim 1, wherein the light emitting diode element is fixed on the protection element with an adhesive. Production method.
5. The method according to claim 4, wherein the light emitting diode element is fixed on the protection element by using a polyimide resin or an epoxy resin as the adhesive.
6. The method for manufacturing a semiconductor light emitting device according to claim 1, wherein the light emitting diode element is fixed on the protection element by a bump electrode. Production method.
7. The method for manufacturing a semiconductor light emitting device according to claim 1, wherein the light emitting diode element is fixed on the protection element with a conductive paste. Manufacturing method.
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JP2006339629A (en) * 2005-05-02 2006-12-14 Nichia Chem Ind Ltd Semiconductor device
JP2007013093A (en) * 2005-07-01 2007-01-18 Shi-Ming Chen Light emitting diode
DE10229067B4 (en) * 2002-06-28 2007-08-16 Osram Opto Semiconductors Gmbh Optoelectronic component and method for its production
JP2009506556A (en) * 2005-08-30 2009-02-12 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH Surface-mountable optoelectronic element and method for manufacturing surface-mountable optoelectronic element
US8076694B2 (en) 2005-05-02 2011-12-13 Nichia Corporation Nitride semiconductor element having a silicon substrate and a current passing region
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US7795633B2 (en) 2002-06-28 2010-09-14 Osram Opto Semiconductors Gmbh Optoelectronic component
US7948046B2 (en) 2002-06-28 2011-05-24 Osram Opto Semiconductor Gmbh Optoelectronic component
DE10229067B4 (en) * 2002-06-28 2007-08-16 Osram Opto Semiconductors Gmbh Optoelectronic component and method for its production
US7429758B2 (en) 2002-06-28 2008-09-30 Osram Opto Semiconductor Gmbh Optoelectronic component and method for producing it
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US8314441B2 (en) 2002-06-28 2012-11-20 Osram Opto Semiconductors Gmbh Optoelectronic component
JP2006339629A (en) * 2005-05-02 2006-12-14 Nichia Chem Ind Ltd Semiconductor device
US8076694B2 (en) 2005-05-02 2011-12-13 Nichia Corporation Nitride semiconductor element having a silicon substrate and a current passing region
JP2007013093A (en) * 2005-07-01 2007-01-18 Shi-Ming Chen Light emitting diode
JP2009506556A (en) * 2005-08-30 2009-02-12 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH Surface-mountable optoelectronic element and method for manufacturing surface-mountable optoelectronic element
US9076928B2 (en) 2012-05-30 2015-07-07 Samsung Electronics Co., Ltd. Semiconductor light emitting device and method for manufacturing the same

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