JP2006332613A5 - - Google Patents

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Publication number
JP2006332613A5
JP2006332613A5 JP2006117418A JP2006117418A JP2006332613A5 JP 2006332613 A5 JP2006332613 A5 JP 2006332613A5 JP 2006117418 A JP2006117418 A JP 2006117418A JP 2006117418 A JP2006117418 A JP 2006117418A JP 2006332613 A5 JP2006332613 A5 JP 2006332613A5
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JP
Japan
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carbon atoms
aromatic hydrocarbon
drain electrode
source electrode
organic compound
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JP2006117418A
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English (en)
Japanese (ja)
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JP2006332613A (ja
JP5164338B2 (ja
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Priority claimed from JP2006117418A external-priority patent/JP5164338B2/ja
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Publication of JP2006332613A5 publication Critical patent/JP2006332613A5/ja
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Publication of JP5164338B2 publication Critical patent/JP5164338B2/ja
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JP2006117418A 2005-04-22 2006-04-21 半導体装置 Expired - Fee Related JP5164338B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006117418A JP5164338B2 (ja) 2005-04-22 2006-04-21 半導体装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2005125811 2005-04-22
JP2005125811 2005-04-22
JP2005125904 2005-04-25
JP2005125904 2005-04-25
JP2006117418A JP5164338B2 (ja) 2005-04-22 2006-04-21 半導体装置

Publications (3)

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JP2006332613A JP2006332613A (ja) 2006-12-07
JP2006332613A5 true JP2006332613A5 (https=) 2009-05-28
JP5164338B2 JP5164338B2 (ja) 2013-03-21

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JP2006117418A Expired - Fee Related JP5164338B2 (ja) 2005-04-22 2006-04-21 半導体装置

Country Status (4)

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US (1) US8049208B2 (https=)
JP (1) JP5164338B2 (https=)
KR (1) KR101182263B1 (https=)
WO (1) WO2006126363A1 (https=)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1820218A4 (en) * 2004-12-06 2010-03-24 Semiconductor Energy Lab ORGANIC FIELD EFFECT TRANSISTOR AND SEMICONDUCTOR EQUIPMENT THEREWITH
US8659008B2 (en) 2005-07-08 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Composite material and light emitting element, light emitting device, and electronic device using the composite material
DE102005048774B4 (de) * 2005-10-07 2009-04-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Substrat, das zumindest bereichsweise an einer Oberfläche mit einer Beschichtung eines Metalls versehen ist, sowie dessen Verwendung
KR101381365B1 (ko) * 2006-01-26 2014-04-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 유기 전계효과 트랜지스터 및 반도체장치
JP5138927B2 (ja) * 2006-12-25 2013-02-06 共同印刷株式会社 フレキシブルtft基板及びその製造方法とフレキシブルディスプレイ
KR100858088B1 (ko) 2007-02-28 2008-09-10 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법
GB2448175B (en) 2007-04-04 2009-07-22 Cambridge Display Tech Ltd Thin film transistor
JP2009001784A (ja) * 2007-05-18 2009-01-08 Semiconductor Energy Lab Co Ltd 有機デバイス用材料および有機デバイス用材料を用いた発光素子、発光装置、電子機器、電界効果トランジスタ、半導体装置
JP2009087907A (ja) * 2007-10-03 2009-04-23 Rohm Co Ltd 有機半導体発光装置
WO2009063780A1 (ja) * 2007-11-12 2009-05-22 Mitsui Chemicals, Inc. 有機トランジスタ
KR101427707B1 (ko) * 2008-02-21 2014-08-11 삼성디스플레이 주식회사 유기 박막 트랜지스터 기판 및 그의 제조 방법
TWI589006B (zh) * 2008-11-07 2017-06-21 半導體能源研究所股份有限公司 半導體裝置和其製造方法
WO2011036866A1 (ja) * 2009-09-25 2011-03-31 出光興産株式会社 有機薄膜トランジスタ
KR101952555B1 (ko) * 2010-01-22 2019-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8436403B2 (en) 2010-02-05 2013-05-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor provided with sidewall and electronic appliance
WO2011105198A1 (en) * 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2014143410A (ja) * 2012-12-28 2014-08-07 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
KR102046864B1 (ko) 2013-03-13 2019-11-20 삼성전자주식회사 유연성 디스플레이 장치
GB2521138B (en) * 2013-12-10 2019-01-02 Flexenable Ltd Source/Drain Conductors for Transistor Devices
US11031506B2 (en) 2018-08-31 2021-06-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor using oxide semiconductor
KR102236034B1 (ko) * 2019-11-14 2021-04-05 삼성전자주식회사 유연성 디스플레이 장치

Family Cites Families (83)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US161192A (en) * 1875-03-23 Improvement in copy-slips for teaching penmanship
US93283A (en) * 1869-08-03 Improved car-starter
US232203A (en) * 1880-09-14 Delivery apparatus for printing-machines
US139303A (en) * 1873-05-27 Improvement in grain rakers and loaders
US228822A (en) * 1880-06-15 Fire-escape
US110812A (en) * 1871-01-03 Washmqton
US46096A (en) * 1865-01-31 Improvement in necktie-holders
US121860A (en) * 1871-12-12 Improvement in papering or putting up needles
US101154A (en) * 1870-03-22 Improvement in fug-mills
US180812A (en) * 1876-08-08 Improvement in neck-yokes
EP0347967A1 (en) * 1988-06-23 1989-12-27 Agfa-Gevaert N.V. Photosensitive recording material suited for use in electrophotography
JP2926845B2 (ja) 1990-03-23 1999-07-28 日本電気株式会社 有機薄膜el素子
JPH0722670A (ja) * 1993-07-06 1995-01-24 Osaka Gas Co Ltd 電界効果型トランジスタ
JPH0790256A (ja) * 1993-09-22 1995-04-04 Pioneer Electron Corp 有機エレクトロルミネッセンス素子
JP2824411B2 (ja) 1995-08-25 1998-11-11 株式会社豊田中央研究所 有機薄膜発光素子
JP4486713B2 (ja) * 1997-01-27 2010-06-23 淳二 城戸 有機エレクトロルミネッセント素子
JPH11251067A (ja) * 1998-03-02 1999-09-17 Junji Kido 有機エレクトロルミネッセント素子
JPH11307264A (ja) 1998-04-17 1999-11-05 Matsushita Electric Ind Co Ltd 有機電界発光素子
JPH11307259A (ja) 1998-04-23 1999-11-05 Tdk Corp 有機el素子
WO2000001203A1 (en) * 1998-06-26 2000-01-06 Idemitsu Kosan Co., Ltd. Luminescent device
KR20010050711A (ko) * 1999-09-29 2001-06-15 준지 키도 유기전계발광소자, 유기전계발광소자그룹 및 이런소자들의 발광스펙트럼의 제어방법
US6335539B1 (en) * 1999-11-05 2002-01-01 International Business Machines Corporation Method for improving performance of organic semiconductors in bottom electrode structure
US6884093B2 (en) * 2000-10-03 2005-04-26 The Trustees Of Princeton University Organic triodes with novel grid structures and method of production
TW545080B (en) 2000-12-28 2003-08-01 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
JP2002204012A (ja) 2000-12-28 2002-07-19 Toshiba Corp 有機トランジスタ及びその製造方法
TW518909B (en) 2001-01-17 2003-01-21 Semiconductor Energy Lab Luminescent device and method of manufacturing same
SG118110A1 (en) 2001-02-01 2006-01-27 Semiconductor Energy Lab Organic light emitting element and display device using the element
US20020139303A1 (en) 2001-02-01 2002-10-03 Shunpei Yamazaki Deposition apparatus and deposition method
DE10116876B4 (de) 2001-04-04 2004-09-23 Infineon Technologies Ag Verfahren zur Dotierung elektrisch leitfähiger organischer Verbindungen, organischer Feldeffekttransistor sowie Verfahren zu dessen Herstellung
JP4841751B2 (ja) * 2001-06-01 2011-12-21 株式会社半導体エネルギー研究所 有機半導体装置及びその作製方法
US6951666B2 (en) * 2001-10-05 2005-10-04 Cabot Corporation Precursor compositions for the deposition of electrically conductive features
DE10153562A1 (de) * 2001-10-30 2003-05-15 Infineon Technologies Ag Verfahren zur Verringerung des elektrischen Kontaktwiderstandes in organischen Feldeffekt-Transistoren durch Einbetten von Nanopartikeln zur Erzeugung von Feldüberhöhungen an der Grenzfläche zwischen dem Kontaktmaterial und dem organischen Halbleitermaterial
DE10153656A1 (de) * 2001-10-31 2003-05-22 Infineon Technologies Ag Verfahren zur Verringerung des Kontaktwiderstandes in organischen Feldeffekttransistoren durch Aufbringen einer reaktiven, die organische Halbleiterschicht im Kontaktbereich regio-selektiv dotierenden Zwischenschicht
JP4269134B2 (ja) * 2001-11-06 2009-05-27 セイコーエプソン株式会社 有機半導体装置
JP2003187983A (ja) * 2001-12-17 2003-07-04 Ricoh Co Ltd 有機elトランジスタ
JP2003298056A (ja) 2002-03-28 2003-10-17 National Institute Of Advanced Industrial & Technology 有機薄膜電界効果トランジスターおよびその製造方法
US6951694B2 (en) * 2002-03-29 2005-10-04 The University Of Southern California Organic light emitting devices with electron blocking layers
JP4364551B2 (ja) 2002-05-15 2009-11-18 株式会社半導体エネルギー研究所 発光装置の作製方法
EP1367659B1 (en) * 2002-05-21 2012-09-05 Semiconductor Energy Laboratory Co., Ltd. Organic field effect transistor
JP2004055652A (ja) 2002-07-17 2004-02-19 Pioneer Electronic Corp 有機半導体素子
EP1383179A2 (en) * 2002-07-17 2004-01-21 Pioneer Corporation Organic semiconductor device
JP2004103905A (ja) 2002-09-11 2004-04-02 Pioneer Electronic Corp 有機半導体素子
US7158161B2 (en) * 2002-09-20 2007-01-02 Matsushita Electric Industrial Co., Ltd. Organic electroluminescence element and an exposure unit and image-forming apparatus both using the element
US7094902B2 (en) * 2002-09-25 2006-08-22 3M Innovative Properties Company Electroactive polymers
US20040161192A1 (en) 2002-12-18 2004-08-19 Matsushita Electric Industrial Co., Ltd. Exposing apparatus and image forming apparatus using organic electroluminescence element
JP2004228371A (ja) 2003-01-23 2004-08-12 Mitsubishi Chemicals Corp 電界効果トランジスタ
US6828583B2 (en) * 2003-03-12 2004-12-07 The Regents Of The University Of California Injection lasers fabricated from semiconducting polymers
JP2005026121A (ja) 2003-07-03 2005-01-27 Fujitsu Ltd 有機el素子及びその製造方法並びに有機elディスプレイ
CN100477873C (zh) * 2003-07-10 2009-04-08 理想星株式会社 发光元件及发光装置
JP4570341B2 (ja) * 2003-07-23 2010-10-27 シャープ株式会社 薄膜トランジスタおよびそれを用いた表示素子、ならびに液晶表示素子
JP4997688B2 (ja) * 2003-08-19 2012-08-08 セイコーエプソン株式会社 電極、薄膜トランジスタ、電子回路、表示装置および電子機器
KR20140107696A (ko) 2003-09-26 2014-09-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광장치
JP4433746B2 (ja) 2003-09-29 2010-03-17 Tdk株式会社 有機電界効果トランジスタ及びその製造方法
EP2276088B1 (en) * 2003-10-03 2018-02-14 Semiconductor Energy Laboratory Co, Ltd. Light emitting element, and light emitting device using the light emitting element
JP4476594B2 (ja) 2003-10-17 2010-06-09 淳二 城戸 有機エレクトロルミネッセント素子
JP4243237B2 (ja) * 2003-11-10 2009-03-25 淳二 城戸 有機素子、有機el素子、有機太陽電池、及び、有機fet構造、並びに、有機素子の製造方法
US7605534B2 (en) * 2003-12-02 2009-10-20 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element having metal oxide and light-emitting device using the same
KR20060110323A (ko) * 2003-12-16 2006-10-24 마츠시타 덴끼 산교 가부시키가이샤 유기 전기발광 소자 및 그 제조 방법
KR100669716B1 (ko) * 2004-07-14 2007-01-16 삼성에스디아이 주식회사 페닐카르바졸 화합물 및 이를 이용한 유기 전계 발광 소자
JP4925569B2 (ja) * 2004-07-08 2012-04-25 ローム株式会社 有機エレクトロルミネッセント素子
EP1624502B1 (en) * 2004-08-04 2015-11-18 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, display device, and electronic appliance
US7208756B2 (en) * 2004-08-10 2007-04-24 Ishiang Shih Organic semiconductor devices having low contact resistance
US7755278B2 (en) 2004-08-25 2010-07-13 Semiconductor Energy Laboratory Co., Ltd. Light emitting element provided with organic conductive and inorganic hole transport layers between an electrode and organic emissive layer
US7683532B2 (en) 2004-11-02 2010-03-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and light emitting device
US7714501B2 (en) 2004-12-01 2010-05-11 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device and electronic equipment
US7667389B2 (en) 2004-12-06 2010-02-23 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device, and electronic device
US7989694B2 (en) 2004-12-06 2011-08-02 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion element, solar battery, and photo sensor
US7545840B2 (en) * 2004-12-06 2009-06-09 Semiconductor Energy Laboratory Co., Ltd. Laser element and method for manufacturing the same
JP2006164708A (ja) * 2004-12-06 2006-06-22 Semiconductor Energy Lab Co Ltd 電子機器および発光装置
EP1820218A4 (en) * 2004-12-06 2010-03-24 Semiconductor Energy Lab ORGANIC FIELD EFFECT TRANSISTOR AND SEMICONDUCTOR EQUIPMENT THEREWITH
US9530968B2 (en) 2005-02-15 2016-12-27 Semiconductor Energy Laboratory Co., Ltd. Light emitting element and light emitting device
US7626198B2 (en) * 2005-03-22 2009-12-01 Semiconductor Energy Laboratory Co., Ltd. Nonlinear element, element substrate including the nonlinear element, and display device
JP5089063B2 (ja) 2005-03-23 2012-12-05 株式会社半導体エネルギー研究所 複合材料および複合材料を用いた発光素子並びに発光装置
US7649197B2 (en) 2005-03-23 2010-01-19 Semiconductor Energy Laboratory Co., Ltd. Composite material, and light emitting element and light emitting device using the composite material
US7851989B2 (en) 2005-03-25 2010-12-14 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US7777232B2 (en) 2005-04-11 2010-08-17 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device using the same
US7560735B2 (en) * 2005-04-22 2009-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, organic transistor, light-emitting device, and electronic device
JP2006332614A (ja) 2005-04-25 2006-12-07 Semiconductor Energy Lab Co Ltd 半導体装置、有機トランジスタ及びその作製方法
US20060270066A1 (en) * 2005-04-25 2006-11-30 Semiconductor Energy Laboratory Co., Ltd. Organic transistor, manufacturing method of semiconductor device and organic transistor
US20060273303A1 (en) * 2005-06-07 2006-12-07 Xerox Corporation. Organic thin film transistors with multilayer electrodes
US8659008B2 (en) * 2005-07-08 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Composite material and light emitting element, light emitting device, and electronic device using the composite material
WO2007015407A1 (en) 2005-08-04 2007-02-08 Semiconductor Energy Laboratory Co., Ltd. Carbazole derivative, light-emitting element material obtained by using carbazole derivative, light-emitting element, and electronic device
KR101381365B1 (ko) 2006-01-26 2014-04-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 유기 전계효과 트랜지스터 및 반도체장치

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